Charged Particle Gun and Charged Particle Beam Apparatus

    公开(公告)号:US20240212966A1

    公开(公告)日:2024-06-27

    申请号:US18391808

    申请日:2023-12-21

    Abstract: Provided are a charged particle gun and a charged particle beam apparatus that can reduce instability in the amount of emitted charged particles and deviation in the charged particle trajectory when the amount of charged particle beams is increased. A charged particle gun includes a charged particle source that generates a charged particle, an electrode portion that includes an extraction electrode for extracting a charged particle beam from the charged particle source, a voltage introduction unit that introduces voltage to the electrode portion, and a temperature adjustment unit that adjusts a temperature of the electrode portion. The temperature adjustment unit is configured to adjust the temperature of the electrode portion based on a change in a state of the electrode portion.

    CHARGED PARTICLE SENSORS INCLUDING WIDE BANDGAP MATERIALS

    公开(公告)号:US20240194442A1

    公开(公告)日:2024-06-13

    申请号:US18065438

    申请日:2022-12-13

    Applicant: FEI Company

    Abstract: Charged particle microscopy systems, sensors, and techniques are provided. A charged particle sensor can include a housing, configured to be incorporated into a scanning electron microscope (SEM). The charged particle sensor can include a detector cell, mechanically coupled with the housing. The detector cell can include an acceptor layer including a semiconducting material characterized by a bandgap equal to or greater than about 2.0 eV. The acceptor layer can define a first surface and a second surface opposing the first surface. The detector cell can include a first conducting layer disposed on the first surface, a second conducting layer disposed on the second surface, a first contact, electrically coupled with the first conducting layer, and a second contact, electrically coupled with the second conducting layer.

    PRECISION IN STEREOSCOPIC MEASUREMENTS USING A PRE-DEPOSITION LAYER

    公开(公告)号:US20240153738A1

    公开(公告)日:2024-05-09

    申请号:US17983225

    申请日:2022-11-08

    Inventor: Yehuda Zur

    CPC classification number: H01J37/28 H01J37/222 H01J2237/2815

    Abstract: A method of determining the depth of a hole milled into a first region of a sample, the method comprising: positioning the sample in a processing chamber having a charged particle beam column; depositing material directly over a top surface of the sample in a second region of the sample adjacent to the first region; milling the hole in the first region of the sample using a charged particle beam generated by the charged particle beam column, wherein the hole abuts the material deposited over the top surface and includes a sidewall that extends from a bottom surface of the hole to an interface between the deposited material and the top surface of the sample; and using stereoscopic measurement techniques to calculate the depth of the hole based on distance measurements between a first point along an interface between the material and the top surface and a second point along a bottom surface of the hole.

    Method for calibrating a scanning charged particle microscope

    公开(公告)号:US11972922B2

    公开(公告)日:2024-04-30

    申请号:US18126322

    申请日:2023-03-24

    CPC classification number: H01J37/28 H01J37/222 H01J2237/2826

    Abstract: A method for calibrating a scanning charged particle microscope, such as a scanning electron microscope (SEM), is provided. The method includes dividing a wafer into a plurality of regions; preparing, on each of the plurality of regions, a pattern including a first periodic structure interleaved with a second periodic structure, the first and second periodic structures having an induced offset; determining an actual pitch the first and second periodic structures and thereby determining actual induced offset on each of the plurality of regions; selecting a plurality of regions from among the plurality of regions; measuring, by the SEM, a pitch of first and second periodic structures on each of the plurality of regions; and performing linearity calibration on the SEM based on the determining and the measuring.

    Height measuring device and beam irradiation device

    公开(公告)号:US11959735B2

    公开(公告)日:2024-04-16

    申请号:US16747942

    申请日:2020-01-21

    CPC classification number: G01B11/0608 H01J37/20 H01J37/28

    Abstract: An object of the present disclosure is to propose a height measuring device which performs height measurement with high accuracy at each height with a relatively simple configuration even when the sample surface height changes greatly. A height measuring device which includes a projection optical system configured to project a light ray onto an object to be measured and a detection optical system including a detection element configured to detect a reflected light ray from the object to be measured, where the projection optical system includes a light splitting element (103) which splits a trajectory of the light ray with which the object to be measured is irradiated into a plurality of parts, and thus it is possible to project a light ray to a predetermined position even when the object to be measured is located at a plurality of heights, is proposed.

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