公开(公告)号：US10038121B2

公开(公告)日：2018-07-31

申请号：US15045279

申请日：2016-02-17

Applicant: Genesis Photonics Inc.

Inventor： Yi-Ru Huang ,  Tung-Lin Chuang ,  Yan-Ting Lan ,  Sheng-Tsung Hsu ,  Chih-Ming Shen ,  Jing-En Huang ,  Teng-Hsien Lai ,  Hung-Chuan Mai ,  Kuan-Chieh Huang ,  Shao-Ying Ting

IPC: H01L33/46 ,  H01L33/38

Abstract: A light emitting diode including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, and a Bragg reflector structure. The emitting layer is configured to emit a light beam and is located between the first-type semiconductor layer and the second-type semiconductor layer. The light beam has a peak wavelength in a light emitting wavelength range. The first-type semiconductor layer, the emitting layer, and the second-type semiconductor layer are located on a same side of the Bragg reflector structure. A reflectance of the Bragg reflector structure is greater than or equal to 95% in a reflective wavelength range at least covering 0.8X nm to 1.8X nm, and X is the peak wavelength of the light emitting wavelength range.

公开(公告)号：US20180182742A1

公开(公告)日：2018-06-28

申请号：US15903156

申请日：2018-02-23

Applicant: Genesis Photonics Inc.

Inventor： Tsung-Syun Huang ,  Chih-Chung Kuo ,  Yi-Ru Huang ,  Chih-Ming Shen ,  Kuan-Chieh Huang ,  Jing-En Huang

IPC: H01L25/075 ,  H01L33/58 ,  H01L33/10 ,  H01L33/20 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  H01L33/46 ,  H01L33/50 ,  H01L33/52 ,  H01L33/56 ,  H01L33/62 ,  H01L33/00 ,  H01L33/54

CPC classification number: H01L25/0753 ,  H01L33/0095 ,  H01L33/10 ,  H01L33/20 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L33/507 ,  H01L33/52 ,  H01L33/54 ,  H01L33/56 ,  H01L33/58 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/005 ,  H01L2933/0058 ,  H01L2924/00014

Abstract: The disclosure relates to a high-voltage light-emitting diode (HV LED) and a manufacturing method thereof. A plurality of LED dies connected in series, in parallel, or in series and parallel are formed on a substrate. A side surface of the first semiconductor layer of part of the LED dies is aligned with a side surface of the substrate, such that no space for exposing the substrate is reserved between the LED dies and the edges of the substrate, the ratio of the substrate being covered by the LED dies is increased, that is, light-emitting area per unit area is increased, and the efficiency of light extraction of HV LED is improved.

公开(公告)号：US20180090639A1

公开(公告)日：2018-03-29

申请号：US15680227

申请日：2017-08-18

Applicant: Genesis Photonics Inc.

Inventor： Shao-Ying Ting ,  Yan-Ting Lan ,  Jing-En Huang ,  Yi-Ru Huang

IPC: H01L33/08 ,  H01L33/38 ,  H01L33/20 ,  H01L33/44 ,  H01L33/00 ,  H01L25/075

CPC classification number: H01L33/08 ,  H01L25/0753 ,  H01L27/15 ,  H01L27/153 ,  H01L27/156 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/20 ,  H01L33/382 ,  H01L33/385 ,  H01L33/44 ,  H01L33/62 ,  H01L2933/0016

Abstract: A μLED including an epitaxial stacked layer, a first electrode and a second electrode is provided. The epitaxial stacked layer includes a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer. The epitaxial stacked layer has a first mesa portion and a second mesa portion to form a first type conductive region and a second type conductive region respectively. The first electrode is disposed on the first mesa portion. The second electrode is disposed on the second mesa portion. The second electrode contacts the first type doped semiconductor layer, the light emitting layer and the second type doped semiconductor layer located at the second mesa portion. Moreover, a manufacturing method of the μLED is also provided.

公开(公告)号：US20180019232A1

公开(公告)日：2018-01-18

申请号：US15715138

申请日：2017-09-25

Applicant: Genesis Photonics Inc.

Inventor： Yi-Ru Huang ,  Tung-Lin Chuang ,  Chih-Ming Shen ,  Sheng-Tsung Hsu ,  Kuan-Chieh Huang ,  Jing-En Huang

IPC: H01L25/075 ,  H01L33/10 ,  H01L33/20 ,  H01L33/38 ,  H01L33/40 ,  H01L33/46 ,  H01L33/50 ,  H01L33/52 ,  H01L33/56 ,  H01L33/62 ,  H01L33/58 ,  H01L33/42 ,  H01L33/54 ,  H01L33/00

CPC classification number: H01L25/0753 ,  H01L33/0095 ,  H01L33/10 ,  H01L33/20 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L33/507 ,  H01L33/52 ,  H01L33/54 ,  H01L33/56 ,  H01L33/58 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/005 ,  H01L2933/0058 ,  H01L2924/00014

Abstract: A light emitting component includes an epitaxial structure, an adhesive layer, a first reflective layer, a second reflective layer, a block layer, a first electrode and a second electrode. The epitaxial structure includes a substrate, a first semiconductor layer, a light emitting layer and a second semiconductor layer. The adhesive layer is disposed on the second semiconductor layer of the epitaxial structure. The first reflective layer is disposed on the adhesive layer. The second reflective layer is disposed on the first reflective layer and extended onto the adhesive layer. A projection area of the second reflective layer is larger than a projection area of the first reflective layer. The block layer is disposed on the second reflective layer. The first electrode is electrically connected to the first semiconductor layer. The second electrode is electrically connected to the second semiconductor layer.

公开(公告)号：US09859459B2

公开(公告)日：2018-01-02

申请号：US14957630

申请日：2015-12-03

Applicant: Genesis Photonics Inc.

Inventor： Shao-Ying Ting ,  Kuan-Chieh Huang ,  Jing-En Huang ,  Yi-Ru Huang ,  Sie-Jhan Wu ,  Long-Lin Ke

IPC: H01L33/00 ,  H01L33/62 ,  H01L33/08 ,  H01L33/50 ,  H01L33/52 ,  H01L25/075 ,  H05B33/08 ,  H01L33/48 ,  H01L33/64 ,  H01L27/15

CPC classification number: H01L33/0095 ,  H01L25/0753 ,  H01L27/15 ,  H01L33/005 ,  H01L33/08 ,  H01L33/486 ,  H01L33/50 ,  H01L33/502 ,  H01L33/507 ,  H01L33/52 ,  H01L33/62 ,  H01L33/64 ,  H01L2224/04105 ,  H01L2224/18 ,  H01L2224/19 ,  H01L2224/24137 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0066 ,  H05B33/0803 ,  H05B33/0806 ,  H05B33/0827 ,  H01L2924/00

Abstract: A method for manufacturing a light emitting unit is provided. A semiconductor structure including a plurality of light emitting dice separated from each other is provided. A molding compound is formed to encapsulate the light emitting dice. Each of the light emitting dice includes a light emitting element, a first electrode and a second electrode. A patterned metal layer is formed on the first electrodes and the second electrodes of the light emitting dice. A substrate is provided, where the molding compound is located between the substrate and the light emitting elements of the light emitting dice. A cutting process is performed to cut the semiconductor structure, the patterned metal layer, the molding compound and the substrate so as to define a light emitting unit with a series connection loop, a parallel connection loop or a series-parallel connection loop.

公开(公告)号：US09831399B2

公开(公告)日：2017-11-28

申请号：US15168218

申请日：2016-05-30

Applicant: Genesis Photonics Inc.

Inventor： Kuan-Chieh Huang ,  Shao-Ying Ting ,  Jing-En Huang ,  Yi-Ru Huang

IPC: H01L33/50 ,  H01L33/54 ,  H01L33/56 ,  H01L33/60

CPC classification number: H01L33/505 ,  H01L33/507 ,  H01L33/54 ,  H01L33/56 ,  H01L33/60

Abstract: A light emitting component includes a light emitting unit, a molding compound and a wavelength converting layer. The light emitting unit has a forward light emitting surface. The molding compound covers the light emitting unit. The wavelength converting layer is disposed above the molding compound. The wavelength converting layer has a first surface and a second surface opposite to the first surface, wherein the first surface is located between the forward light emitting surface and the second surface, and at least one of the first and second surfaces is non-planar.

公开(公告)号：US20170338375A1

公开(公告)日：2017-11-23

申请号：US15670050

申请日：2017-08-07

Applicant: Genesis Photonics Inc.

Inventor： Shao-Ying Ting ,  Jing-En Huang

IPC: H01L33/00 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/0079 ,  H01L21/6835 ,  H01L21/6836 ,  H01L33/0075 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/32 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/6834 ,  H01L2221/68381

Abstract: A method for manufacturing a light-emitting diode (LED) is provided. The method includes following steps. A LED wafer including a substrate and a plurality of light-emitting units formed thereon is provided. At least a portion of the substrate is removed. The LED wafer is fixed on an extensible membrane, wherein the light-emitting unit faces the extensible membrane. The LED wafer is broken to form a plurality of LED dices separated from each other, wherein each LED dice includes at least one light-emitting unit. The extensible membrane is expanded to make a distance between any two of the LED dices become larger.

公开(公告)号：US09564554B2

公开(公告)日：2017-02-07

申请号：US14877948

申请日：2015-10-08

Applicant: Genesis Photonics Inc.

Inventor： Yi-Fan Li ,  Jing-En Huang ,  Sie-Jhan Wu

IPC: H01L33/00 ,  H01L33/22 ,  H01L33/48 ,  H01L33/06

CPC classification number: H01L33/22 ,  H01L33/005 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/486 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0091

Abstract: A thin-film flip-chip light emitting diode (LED) having a roughened surface and a method for manufacturing the same are provided. First, a substrate having a patterned structure on a surface of the substrate is provided, and the surface is roughened. A first semiconductor layer is then formed on the surface; a light emitting structure layer is then formed on the first semiconductor layer; a second semiconductor layer is then formed on the light emitting structure layer. The first and second semiconductor layers possess opposite electrical characteristics. A first contact electrode and a second contact electrode are then formed on the first semiconductor layer and the second semiconductor layer, respectively. Finally, a sub-mount is formed on the first and second contact electrodes, and the substrate is removed to form the thin-film flip-chip LED having the roughened surface. Here, the light emitting efficiency of the thin-film flip-chip LED is improved.

Abstract translation: 提供了具有粗糙表面的薄膜倒装芯片发光二极管（LED）及其制造方法。 首先，提供在基板的表面上具有图案化结构的基板，并使表面粗糙化。 然后在表面上形成第一半导体层; 然后在第一半导体层上形成发光结构层; 然后在发光结构层上形成第二半导体层。 第一和第二半导体层具有相反的电特性。 然后分别在第一半导体层和第二半导体层上形成第一接触电极和第二接触电极。 最后，在第一接触电极和第二接触电极上形成子座，并且移除衬底以形成具有粗糙表面的薄膜倒装芯片LED。 这里，提高了薄膜倒装芯片LED的发光效率。

公开(公告)号：US20160315238A1

公开(公告)日：2016-10-27

申请号：US15135574

申请日：2016-04-22

Applicant: Genesis Photonics Inc.

Inventor： Yu-Chen Kuo ,  Teng-Hsien Lai ,  Kai-Shun Kang ,  Yan-Ting Lan ,  Jing-En Huang ,  Cheng-Pin Chen ,  Wei-Chen Chien ,  Chih-Chin Cheng ,  Chih-Hung Tseng

IPC: H01L33/62 ,  H01L33/36 ,  H01L33/44

CPC classification number: H01L33/38 ,  H01L33/145

Abstract: Provided is a light-emitting diode chip including a semiconductor device layer, a first electrode, a current-blocking layer, a current-spreading layer, and a second electrode. The semiconductor device layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a light-emitting layer therebetween. The first electrode is electrically connected to the first-type doped semiconductor layer. The current-blocking layer is on the second-type doped semiconductor layer. The current-blocking layer is between the current-spreading layer and the second-type doped semiconductor layer. The second electrode is on the current-spreading layer and electrically connected to the second-type doped semiconductor layer. The current-blocking layer has a first surface facing the semiconductor device layer, a second surface back on to the semiconductor device layer, and a first inclined surface. The first inclined surface is connected between the first surface and the second surface and tilted with respect to the first surface and the second surface.

Abstract translation: 提供了包括半导体器件层，第一电极，电流阻挡层，电流扩展层和第二电极的发光二极管芯片。 半导体器件层包括第一类掺杂半导体层，第二类掺杂半导体层和它们之间的发光层。 第一电极电连接到第一掺杂半导体层。 电流阻挡层位于第二类掺杂半导体层上。 电流阻挡层在电流扩散层和第二类掺杂半导体层之间。 第二电极在电流扩展层上并电连接到第二类掺杂半导体层。 电流阻挡层具有面向半导体器件层的第一表面，反向到半导体器件层的第二表面和第一倾斜表面。 第一倾斜表面连接在第一表面和第二表面之间并相对于第一表面和第二表面倾斜。

公开(公告)号：US20160240758A1

公开(公告)日：2016-08-18

申请号：US15045266

申请日：2016-02-17

Applicant: Genesis Photonics Inc.

Inventor： Yi-Ru Huang ,  Tung-Lin Chuang ,  Chih-Ming Shen ,  Sheng-Tsung Hsu ,  Kuan-Chieh Huang ,  Jing-En Huang ,  Shao-Ying Ting

IPC: H01L33/62

CPC classification number: H01L33/46 ,  H01L33/10 ,  H01L33/44 ,  H01L33/50 ,  H01L33/62 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2933/0025 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Provided is a light emitting diode (LED) mounted on a carrier substrate and including a semiconductor epitaxial structure and at least one electrode pad structure. The semiconductor epitaxial structure is electrically connected to the carrier substrate. The electrode pad structure includes a eutectic layer, a blocking layer and an extension layer. The eutectic layer is adapted for eutectic bonding to the carrier substrate. The blocking layer is between the eutectic layer and the semiconductor epitaxial structure. The blocking layer blocks the diffusion of the material of the eutectic layer in the eutectic bonding process. The extension layer is between the eutectic layer and the semiconductor epitaxial structure. The extension layer reduces the stress on the LED produced by thermal expansion and contraction of the substrate during the eutectic bonding process, so as to prevent the electrode pad structure from cracking, and maintain the quality of the LED.

Abstract translation: 提供了一种安装在载体基板上并包括半导体外延结构和至少一个电极焊盘结构的发光二极管（LED）。 半导体外延结构电连接到载体衬底。 电极焊盘结构包括共晶层，阻挡层和延伸层。 共晶层适于与载体基底共晶结合。 阻挡层在共晶层和半导体外延结构之间。 阻挡层阻止共晶粘合过程中共晶层的材料的扩散。 扩展层在共晶层和半导体外延结构之间。 延伸层在共晶接合工艺期间降低由基板的热膨胀和收缩产生的LED上的应力，以防止电极焊盘结构破裂，并且保持LED的质量。