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    LIGHT-EMITTING DIODE AND MANUFACTURE METHOD THEREOF
    51.
    发明申请
    LIGHT-EMITTING DIODE AND MANUFACTURE METHOD THEREOF 审中-公开

    公开(公告)号：US20190312176A1

    公开(公告)日：2019-10-10

    申请号：US16443832

    申请日：2019-06-17

    Applicant: Genesis Photonics Inc.

    Inventor： Tsung-Syun Huang ,  Jing-En Huang ,  Yu-Chen Kuo ,  Yan-Ting Lan ,  Kai-Shun Kang ,  Fei-Lung Lu ,  Teng-Hsien Lai ,  Yi-Ru Huang

    IPC: H01L33/06 ,  H01L33/38

    Abstract: A light-emitting diode including a semiconductor epitaxial layer, a first electrode, and a second electrode is provided. The semiconductor epitaxial layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a quantum well layer. A recessed portion is formed in the semiconductor epitaxial layer. The recessed portion separates the second-type doped semiconductor layer, the quantum well layer, and a portion of the first-type doped semiconductor layer and defines a first region and a second region on the semiconductor epitaxial layer. The first electrode is located in the first region and electrically connected to at least a portion of the first-type doped semiconductor layer and at least a portion of the second-type doped semiconductor layer. The second electrode is located in the second region and electrically connected to the second-type doped semiconductor layer.

    Light emitting component
    52.
    发明授权
    Light emitting component 有权

    公开(公告)号：US10396255B2

    公开(公告)日：2019-08-27

    申请号：US15823480

    申请日：2017-11-27

    Applicant: Genesis Photonics Inc.

    Inventor： Kuan-Chieh Huang ,  Shao-Ying Ting ,  Jing-En Huang ,  Yi-Ru Huang

    IPC: H01L33/50 ,  H01L33/54 ,  H01L33/56 ,  H01L33/60

    Abstract: A light emitting component includes a light emitting unit, a molding compound and a wavelength converting layer. The light emitting unit has a forward light emitting surface. The molding compound covers the light emitting unit. The wavelength converting layer is disposed above the molding compound. The wavelength converting layer has a first surface and a second surface opposite to the first surface, wherein the first surface is located between the forward light emitting surface and the second surface, and at least one of the first and second surfaces is non-planar.

    LIGHT EMITTING DIODE STRUCTURE
    53.
    发明申请
    LIGHT EMITTING DIODE STRUCTURE 审中-公开

    公开(公告)号：US20190237627A1

    公开(公告)日：2019-08-01

    申请号：US16384871

    申请日：2019-04-15

    Applicant: Genesis Photonics Inc.

    Inventor： Yi-Ru Huang ,  Yu-Yun Lo ,  Chih-Ling Wu ,  Jing-En Huang ,  Shao-Ying Ting

    IPC: H01L33/40

    CPC classification number: H01L33/405 ,  H01L33/42

    Abstract: A light emitting diode structure including a substrate, a semiconductor epitaxial structure, a first insulating layer, a first reflective layer, a second reflective layer, a second insulating layer and at least one electrode. The substrate has a tilt surface. The semiconductor epitaxial structure at least exposes the tilt surface. The first insulating layer exposes a portion of the semiconductor epitaxial structure. The first reflective layer is at least partially disposed on the portion of the semiconductor epitaxial structure and electrically connected to the semiconductor epitaxial structure. The second reflective layer is disposed on the first reflective layer and the first insulating layer, and covers at least the portion of the tilt surface. The second insulating layer is disposed on the second reflective layer. The electrode is disposed on the second reflective layer and electrically connected to the first reflective layer and the semiconductor epitaxial structure.

    Light emitting chip
    57.
    发明授权
    Light emitting chip 有权
    发光芯片

    公开(公告)号：US09577154B2

    公开(公告)日：2017-02-21

    申请号：US14535333

    申请日：2014-11-07

    Applicant: Genesis Photonics Inc.

    Inventor： Yu-Yun Lo ,  Yi-Fan Li ,  Chih-Ling Wu ,  Yi-Ru Huang ,  Jing-En Huang ,  Shao-Ying Ting

    IPC: H01L21/00 ,  H01L33/40 ,  H01L33/44 ,  H01L33/42

    CPC classification number: H01L33/40 ,  H01L33/42 ,  H01L33/44

    Abstract: A light emitting chip includes a light emitting unit, a eutectic layer and a surface passivation layer. The eutectic layer has a first surface and a second surface opposite to each other. The light emitting chip connects to the first surface of the eutectic layer. The surface passivation layer covers the second surface of the eutectic layer. A material of the surface passivation layer includes at least a metal of an oxidation potential from −0.2 volts to −1.8 volts.

    Abstract translation: 发光芯片包括发光单元，共晶层和表面钝化层。 共晶层具有彼此相对的第一表面和第二表面。 发光芯片连接到共晶层的第一表面。 表面钝化层覆盖共晶层的第二表面。 表面钝化层的材料至少包括-0.2伏至-1.8伏的氧化电位的金属。

    LIGHT EMITTING DIODE
    58.
    发明申请
    LIGHT EMITTING DIODE 审中-公开
    发光二极管

    公开(公告)号：US20160329461A1

    公开(公告)日：2016-11-10

    申请号：US15135573

    申请日：2016-04-22

    Applicant: Genesis Photonics Inc.

    Inventor： Yi-Ru Huang ,  Tung-Lin Chuang ,  Yan-Ting Lan ,  Sheng-Tsung Hsu ,  Chih-Ming Shen ,  Jing-En Huang ,  Teng-Hsien Lai ,  Hung-Chuan Mai ,  Kuan-Chieh Huang ,  Shao-Ying Ting ,  Cheng-Pin Chen ,  Wei-Chen Chien ,  Chih-Chin Cheng ,  Chih-Hung Tseng

    IPC: H01L33/10 ,  H01L33/62 ,  H01L33/24 ,  H01L33/38

    CPC classification number: H01L33/38 ,  H01L33/36 ,  H01L33/382 ,  H01L33/385 ,  H01L33/387 ,  H01L33/405 ,  H01L33/46 ,  H01L33/465 ,  H01L33/60

    Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.

    Abstract translation: 本发明提供一种包括第一类型半导体层，发光层，第二类型半导体层，第一电极，第二电极，布拉格反射器结构，导电层和绝缘图案的LED。 第一电极和第二电极位于布拉格反射器结构的同一侧。 导电层设置在布拉格反射器结构和第二类型半导体层之间。 绝缘图案设置在导电层和第二类型半导体层之间。 每个绝缘层具有面向第二类型半导体层的第一表面，背离第二类型半导体层的第二表面和倾斜表面。 倾斜表面连接第一表面和第二表面，并且相对于第一表面和第二表面倾斜。

    LIGHT-EMITTING DEVICE AND LIGHT-EMITTING MODULE USING THE SAME
    59.
    发明申请
    LIGHT-EMITTING DEVICE AND LIGHT-EMITTING MODULE USING THE SAME 审中-公开
    发光装置和使用其的发光模块

    公开(公告)号：US20160307880A1

    公开(公告)日：2016-10-20

    申请号：US15131143

    申请日：2016-04-18

    Applicant: Genesis Photonics Inc.

    Inventor： Yi-Ru Huang ,  Shao-Ying Ting ,  Kuan-Chieh Huang ,  Jing-En Huang

    IPC: H01L25/075 ,  H01L33/48 ,  H01L33/38 ,  H01L33/62 ,  H01L33/54

    CPC classification number: H01L25/0753 ,  H01L33/0079 ,  H01L33/44 ,  H01L33/62 ,  H01L33/647 ,  H01L2224/16145 ,  H01L2224/4813 ,  H01L2224/48464 ,  H01L2224/73265

    Abstract: A light-emitting device and a light-emitting module using the same are provided. The light-emitting device includes a substrate module and a light-emitting component. The substrate module includes a substrate, a first conductive layer, an insulation layer and a second conductive layer. The substrate has an upper surface. The insulation layer is formed on the upper surface of the substrate, separates the substrate and the first conductive layer and has an opening. The second conductive layer connects to the upper surface of the substrate and is separated from the first conductive layer. The light-emitting component is disposed on the substrate module and electrically connected to the first conductive layer and the second conductive layer.

    Abstract translation: 提供了一种发光装置和使用其的发光模块。 发光装置包括基板模块和发光部件。 衬底模块包括衬底，第一导电层，绝缘层和第二导电层。 基板具有上表面。 绝缘层形成在基板的上表面上，分离基板和第一导电层并具有开口。 第二导电层连接到衬底的上表面并与第一导电层分离。 发光部件设置在基板模块上并电连接到第一导电层和第二导电层。

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