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公开(公告)号:US09219211B1
公开(公告)日:2015-12-22
申请号:US14474283
申请日:2014-09-01
Applicant: Genesis Photonics Inc.
Inventor: Shao-Ying Ting , Kuan-Chieh Huang , Jing-En Huang , Yi-Ru Huang , Sie-Jhan Wu , Long-Lin Ke
CPC classification number: H01L33/0095 , H01L25/0753 , H01L27/15 , H01L33/005 , H01L33/08 , H01L33/486 , H01L33/50 , H01L33/502 , H01L33/507 , H01L33/52 , H01L33/62 , H01L33/64 , H01L2224/04105 , H01L2224/18 , H01L2224/19 , H01L2224/24137 , H01L2924/0002 , H01L2933/0016 , H01L2933/0041 , H01L2933/005 , H01L2933/0066 , H05B33/0803 , H05B33/0806 , H05B33/0827 , H01L2924/00
Abstract: A method for manufacturing a light emitting unit is provided. A semiconductor structure including a plurality of light emitting dice separated from each other is provided. A molding compound is formed to encapsulate the light emitting dice. Each of the light emitting dice includes a light emitting element, a first electrode and a second electrode. A patterned metal layer is formed on the first electrodes and the second electrodes of the light emitting dice. A substrate is provided, where the molding compound is located between the substrate and the light emitting elements of the light emitting dice. A cutting process is performed to cut the semiconductor structure, the patterned metal layer, the molding compound and the substrate so as to define a light emitting unit with a series connection loop, a parallel connection loop or a series-parallel connection loop.
Abstract translation: 提供一种制造发光单元的方法。 提供包括彼此分离的多个发光骰子的半导体结构。 形成模塑料以封装发光管芯。 每个发光管芯包括发光元件,第一电极和第二电极。 在第一电极和发光管芯的第二电极上形成图案化的金属层。 提供了一种基板,其中模塑料位于基板和发光芯片的发光元件之间。 执行切割处理以切割半导体结构,图案化金属层,模制化合物和基板,以便限定具有串联连接环路,并联连接环路或串联 - 并联连接环路的发光单元。
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公开(公告)号:US20150103556A1
公开(公告)日:2015-04-16
申请号:US14513210
申请日:2014-10-14
Applicant: Genesis Photonics Inc.
Inventor: Shao-Ying Ting , Jing-En Huang , Pei-Hsin Chen , Chih-Ling Wu , Yi-Ru Huang , Yu-Yun Lo
IPC: F21V8/00
CPC classification number: F21K9/61 , F21Y2115/10
Abstract: A package carrier is suitable for carrying at least one light emitting unit. The package carrier includes an annular shell and a transparent light guiding stage. The annular shell has a cavity. The transparent light guiding stage is disposed in the cavity of the annular shell. The light emitting unit is adapted to be disposed on the transparent light guiding stage, and a horizontal projection area of the transparent light guiding stage is greater than that of the light emitting unit. The light emitting unit emits a light beam to enter the transparent light guiding stage, and the light beam emits from a surface of the transparent light guiding stage relatively distant from the cavity.
Abstract translation: 包装载体适用于承载至少一个发光单元。 包装载体包括环形壳和透明导光级。 环形壳体具有空腔。 透明导光台设置在环形壳体的空腔中。 发光单元适于设置在透明导光台上,并且透明导光台的水平投影区域大于发光单元的水平投影区域。 发光单元发射光束进入透明光引导台,并且光束从相对远离空腔的透明导光台的表面发射。
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公开(公告)号:US20150102379A1
公开(公告)日:2015-04-16
申请号:US14513228
申请日:2014-10-14
Applicant: Genesis Photonics Inc.
Inventor: Yun-Li Li , Jing-En Huang , Shao-Ying Ting , Chih-Ling Wu , Yi-Ru Huang , Yu-Yun Lo
Abstract: A light emitting diode structure includes a substrate and a light emitting unit. The substrate has a protrusion portion and a light guiding portion. The protrusion portion and the light guiding portion have a seamless connection therebetween, and a horizontal projection area of the protrusion portion is smaller than that of the light guiding portion. The light emitting unit is disposed on the protrusion portion of the substrate. The light emitting unit is adapted to emit a light beam, and a portion of the light beam enters the light guiding portion from the protrusion portion and emits from an upper surface of the light guiding portion uncovered by the protrusion portion.
Abstract translation: 发光二极管结构包括基板和发光单元。 基板具有突出部和导光部。 突出部和导光部之间具有无缝连接,突出部的水平投影面积小于导光部的水平投影面积。 发光单元设置在基板的突出部分上。 发光单元适于发射光束,并且光束的一部分从突出部分进入导光部分,并且从未被突出部分覆盖的导光部分的上表面发射。
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公开(公告)号:US10734551B2
公开(公告)日:2020-08-04
申请号:US16659548
申请日:2019-10-21
Applicant: Genesis Photonics Inc.
Inventor: Yi-Ru Huang , Tung-Lin Chuang , Yan-Ting Lan , Sheng-Tsung Hsu , Chih-Ming Shen , Jing-En Huang , Teng-Hsien Lai , Hung-Chuan Mai , Kuan-Chieh Huang , Shao-Ying Ting , Cheng-Pin Chen , Wei-Chen Chien , Chih-Chin Cheng , Chih-Hung Tseng
Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.
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公开(公告)号:US10453999B2
公开(公告)日:2019-10-22
申请号:US15981855
申请日:2018-05-16
Applicant: Genesis Photonics Inc.
Inventor: Yi-Ru Huang , Tung-Lin Chuang , Yan-Ting Lan , Sheng-Tsung Hsu , Chih-Ming Shen , Jing-En Huang , Teng-Hsien Lai , Hung-Chuan Mai , Kuan-Chieh Huang , Shao-Ying Ting , Cheng-Pin Chen , Wei-Chen Chien , Chih-Chin Cheng , Chih-Hung Tseng
Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.
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公开(公告)号:US10263156B2
公开(公告)日:2019-04-16
申请号:US15871891
申请日:2018-01-15
Applicant: Genesis Photonics Inc.
Inventor: Yi-Ru Huang , Yu-Yun Lo , Chih-Ling Wu , Jing-En Huang , Shao-Ying Ting
Abstract: A light emitting diode structure including a substrate, a semiconductor epitaxial structure, a first insulating layer, a first reflective layer, a second reflective layer, a second insulating layer and at least one electrode. The substrate has a tilt surface. The semiconductor epitaxial structure at least exposes the tilt surface. The first insulating layer exposes a portion of the semiconductor epitaxial structure. The first reflective layer is at least partially disposed on the portion of the semiconductor epitaxial structure and electrically connected to the semiconductor epitaxial structure. The second reflective layer is disposed on the first reflective layer and the first insulating layer, and covers at least the portion of the tilt surface. The second insulating layer is disposed on the second reflective layer. The electrode is disposed on the second reflective layer and electrically connected to the first reflective layer and the semiconductor epitaxial structure.
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公开(公告)号:US20180374892A1
公开(公告)日:2018-12-27
申请号:US16101681
申请日:2018-08-13
Applicant: Genesis Photonics Inc.
Inventor: Tsung-Syun Huang , Chih-Chung Kuo , Jing-En Huang , Shao-Ying Ting
CPC classification number: H01L27/15 , H01L27/153 , H01L33/20 , H01L2933/0016
Abstract: A light-emitting device includes a substrate and a first light-emitting unit. The first light-emitting unit is disposed on the substrate, and includes a first semiconductor layer, a first light-emitting layer, and a second semiconductor layer. The first semiconductor layer is disposed on the substrate. The first light-emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer is disposed on the first light-emitting layer. The first semiconductor layer has a first sidewall and a second sidewall. A first angle is between the substrate and the first sidewall. A second angle is between the substrate and the second sidewall. The first angle is smaller than the second angle.
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公开(公告)号:US10164145B2
公开(公告)日:2018-12-25
申请号:US15859714
申请日:2018-01-01
Applicant: Genesis Photonics Inc.
Inventor: Shao-Ying Ting , Kuan-Chieh Huang , Jing-En Huang , Yi-Ru Huang , Sie-Jhan Wu , Long-Lin Ke
IPC: H01L33/00 , H01L33/62 , H01L33/08 , H01L33/50 , H01L33/52 , H01L25/075 , H05B33/08 , H01L33/48 , H01L33/64 , H01L27/15
Abstract: A method for manufacturing a light emitting unit is provided. A semiconductor structure including a plurality of light emitting dice separated from each other is provided. A molding compound is formed to encapsulate the light emitting dice. Each of the light emitting dice includes a light emitting element, a first electrode and a second electrode. A patterned metal layer is formed on the first electrodes and the second electrodes of the light emitting dice. A substrate is provided, where the molding compound is located between the substrate and the light emitting elements of the light emitting dice. A cutting process is performed to cut the semiconductor structure, the patterned metal layer, the molding compound and the substrate so as to define a light emitting unit with a series connection loop, a parallel connection loop or a series-parallel connection loop.
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公开(公告)号:US20180122984A1
公开(公告)日:2018-05-03
申请号:US15859714
申请日:2018-01-01
Applicant: Genesis Photonics Inc.
Inventor: Shao-Ying Ting , Kuan-Chieh Huang , Jing-En Huang , Yi-Ru Huang , Sie-Jhan Wu , Long-Lin Ke
IPC: H01L33/00 , H05B33/08 , H01L33/08 , H01L33/48 , H01L33/50 , H01L33/62 , H01L33/52 , H01L25/075 , H01L33/64 , H01L27/15
CPC classification number: H01L33/0095 , H01L25/0753 , H01L27/15 , H01L33/005 , H01L33/08 , H01L33/486 , H01L33/50 , H01L33/502 , H01L33/507 , H01L33/52 , H01L33/62 , H01L33/64 , H01L2224/04105 , H01L2224/18 , H01L2224/19 , H01L2224/24137 , H01L2924/0002 , H01L2933/0016 , H01L2933/0041 , H01L2933/005 , H01L2933/0066 , H05B33/0803 , H05B33/0806 , H05B33/0827 , H01L2924/00
Abstract: A method for manufacturing a light emitting unit is provided. A semiconductor structure including a plurality of light emitting dice separated from each other is provided. A molding compound is formed to encapsulate the light emitting dice. Each of the light emitting dice includes a light emitting clement, a first electrode and a second electrode. A patterned metal layer is formed on the first electrodes and the second electrodes of the light emitting dice. A substrate is provided, where the molding compound is located between the substrate and the light emitting elements of the light emitting dice. A cutting process is performed to cut the semiconductor structure, the patterned metal layer, the molding compound and the substrate so as to define a light emitting unit with a series connection loop, a parallel connection loop or a series-parallel connection loop.
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公开(公告)号:US20180083168A1
公开(公告)日:2018-03-22
申请号:US15823480
申请日:2017-11-27
Applicant: Genesis Photonics Inc.
Inventor: Kuan-Chieh Huang , Shao-Ying Ting , Jing-En Huang , Yi-Ru Huang
CPC classification number: H01L33/505 , H01L33/507 , H01L33/54 , H01L33/56 , H01L33/60
Abstract: A light emitting component includes a light emitting unit, a molding compound and a wavelength converting layer. The light emitting unit has a forward light emitting surface. The molding compound covers the light emitting unit. The wavelength converting layer is disposed above the molding compound. The wavelength converting layer has a first surface and a second surface opposite to the first surface, wherein the first surface is located between the forward light emitting surface and the second surface, and at least one of the first and second surfaces is non-planar.
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