Abstract:
A scanning electron microscope (SEM) with a swing objective lens (SOL) reduces the off-aberrations to enhance the image resolution, and extends the e-beam scanning angle. The scanning electron microscope comprises a charged particle source, an accelerating electrode, and a swing objective lens system including a pre-deflection unit, a swing deflection unit and an objective lens, all of them are rotationally symmetric with respect to an optical axis. The upper inner-face of the swing deflection unit is tilted an angle θ to the outer of the SEM and its lower inner-face is parallel to the optical axis. A distribution for a first and second focusing field of the swing objective lens is provided to limit the off-aberrations and can be performed by a single swing deflection unit. Preferably, the two focusing fields are overlapped by each other at least 80 percent.
Abstract:
Pattern critical dimension measurement equipment includes an electron source configured to generate a primary electron beam, a deflector configured to deflect the primary electron beam emitted from the electron source, a focusing lens configured to focus the primary electron beam deflected by the deflector, a decelerator configured to decelerate the primary electron beam that irradiates the sample, a first detector located between the electron source and the focusing lens, the first detector being configured to detect electrons at part of azimuths of electrons generated from the sample upon irradiation of the sample with the primary electron beam, and a second detector located between the electron source and the first detector, the second detector being configured to detect electrons at substantially all azimuths of the electrons generated from the sample.
Abstract:
The present invention provides a composite charged particle beam device which is provided with two or more charged particle beam columns and enables high-resolution observation while a sample is placed at the position of a cross point. The present invention has the following configuration. A composite charged particle beam device is provided with a plurality of charged particle beam columns (101a, 102a), and is characterized in that a sample (103) is disposed at the position of an intersection point (171) where the optical axes of the plurality of columns intersect, a component (408a, 408b) that forms the tip of an objective lens of the charged particle beam column (102a) is detachable, and by replacing the component (408a, 408b), the distance between the intersection point (171) and the tip of the charge particle beam column can be changed.
Abstract:
An apparatus to control an ion beam for treating a substrate. The apparatus may include a fixed electrode configured to conduct the ion beam through a fixed electrode aperture and to apply a fixed electrode potential to the ion beam, a ground electrode assembly disposed downstream of the fixed electrode. The ground electrode assembly may include a base and a ground electrode disposed adjacent the fixed electrode and configured to conduct the ion beam through a ground electrode aperture, the ground electrode being reversibly movable along a first axis with respect to the fixed electrode between a first position and a second position, wherein a beam current of the ion beam at the substrate varies when the ground electrode moves between the first position and second position.
Abstract:
The present invention relates to a lens-less Foucault method wherein a transmission electron microscope objective lens (5) is turned off, an electron beam crossover (11, 13) is matched with a selected area aperture (65), and the focal distance of a first imaging lens (61) can be changed to enable switching between a sample image observation mode and a sample diffraction pattern observation mode, characterized in that a deflector (81) is disposed in a stage following the first imaging lens (61), and conditions for an irradiating optical system (4) can be fixed after conditions for the imaging optical system have been determined. This allows a lens-less Foucault method to be implemented in a common general-use transmission electron microscope with no magnetic shielding lens equipped, without burdening the operator.
Abstract:
An electron microscope has a large depth of focus in comparison with an optical microscope. Thus, information is superimposed on one image in the direction of depth. Therefore, it is necessary to accurately specify the three-dimensional position and density of a structure in a specimen so as to observe the three-dimensional structure of the interior of the specimen by using the electron microscope. Furthermore, a specimen that is observed with the optical microscope on a slide glass is not put into a TEM device of the related art. Thus, performing three-dimensional internal structure observation with the electron microscope on a location that is observed with the optical microscope requires very cumbersome preparation of the specimen. By controlling a vector parameter that defines the interrelationship between a primary charged particle beam and the specimen and by irradiation with the primary charged particle beam with a plurality of different vector parameters, images of transmitted charged particles of the specimen that correspond to each of the vector parameters are obtained. Irradiation with the primary charged particle beam is performed on the specimen that is arranged either directly or through a predetermined member on a detector which detects charged particles transmitted through or scattered by the interior of the specimen.
Abstract:
A particle-optical arrangement comprises a charged-particle source for generating a beam of charged particles; a multi-aperture plate arranged in a beam path of the beam of charged particles, wherein the multi-aperture plate has a plurality of apertures formed therein in a predetermined first array pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture plate, and wherein a plurality of beam spots is formed in an image plane of the apparatus by the plurality of beamlets, the plurality of beam spots being arranged in a second array pattern; and a particle-optical element for manipulating the beam of charged particles and/or the plurality of beamlets; wherein the first array pattern has a first pattern regularity in a first direction, and the second array pattern has a second pattern regularity in a second direction electron-optically corresponding to the first direction, and wherein the second regularity is higher than the first regularity.
Abstract:
The invention relates to a projection lens assembly for directing a beam toward a target. This assembly includes a lens support body (52) that spans a plane (P), and has a connection region (58) and a lateral edge (56). The lens support body is arranged for insertion into a frame (42) of a processing unit along an insertion direction (X) parallel with the plane (P). The projection lens assembly includes conduits (60-64) emanating from the connection region, and a conduit guiding body (70-81) for accommodating the conduits. The guiding body includes a first guiding portion (72) for guiding the conduits from the connection region, along the plane to a lateral region (B) beyond the lateral edge. The guiding body also includes a second guiding portion (78) for guiding the conduits from the lateral region (B) toward a tilted edge (79) of the conduit guiding body.
Abstract:
A charged particle beam device (1) includes a charged particle optical lens barrel (10), a support housing (20) equipped with the charged particle optical lens barrel (10) thereon, and an insertion housing (30) inserted in the support housing (20). A first aperture member (15) is disposed in the vicinity of the center of the magnetic field of an objective lens, and a second aperture member (15) is disposed so as to externally close an opening part provided at the upper side of the insertion housing (30). Further, when a primary charged particle beam (12) is irradiated to a sample (60) arranged under the lower side of the second aperture member (31), secondary charged particles thus emitted are detected by a detector (16).
Abstract:
An ion implantation apparatus includes a beam scanning unit and a beam parallelizing unit arranged downstream thereof. The beam scanning unit has a scan origin in a central part of the scanning unit on a central axis of an incident ion beam. The beam parallelizing unit has a focal point of a parallelizing lens at the scan origin. The ion implantation apparatus is configured such that a focal position of the incident beam into the scanning unit is located upstream of the scan origin along the central axis of the incident beam. The focal position of the incident beam into the scanning unit is adjusted to be at a position upstream of the scan origin along the central axis of the incident beam such that a divergence phenomenon caused by the space charge effect in an exiting ion beam from the parallelizing unit is compensated.