Background correction in emission spectra

    公开(公告)号:US09677934B2

    公开(公告)日:2017-06-13

    申请号:US14470875

    申请日:2014-08-27

    CPC classification number: G01J3/0297 G01J3/28 G01J3/443

    Abstract: A method for deriving a background-corrected portion of a measured optical emission spectrum comprising the steps of identifying two or more background correction points from the portion of the measured emission spectrum; deriving a background correction function fitted to the identified background correction points, and applying the background correction function to the portion of the measured emission spectrum so as to produce a background-corrected portion of the emission spectrum, wherein the background correction points are identified from the measured data points by consideration of the gradients between the measured data points.

    Method and device for measuring unoccupied states of solid

    公开(公告)号:US09664564B2

    公开(公告)日:2017-05-30

    申请号:US14381742

    申请日:2013-02-26

    Inventor: Hiroyuki Yoshida

    Abstract: Intensity of near-ultraviolet light or visible light of 180 to 700 nm emitted from a solid sample, such as an organic semiconductor, irradiated with an electron beam is measured, while kinetic energy (accelerating energy) of the electron beam is changed in a range of 0 to 5 eV so as to obtain a spectrum. Peaks are detected from the spectrum, and the energy thereof is defined as unoccupied-states energy of the sample. The onset energy of the first peak represents electronic affinity energy (electron affinity) of the sample. Since the energy of the electron beam irradiated onto the sample is 5 eV or less, almost no damage is exerted on the sample even when the sample is an organic semiconductor.

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