公开(公告)号：US09266437B2

公开(公告)日：2016-02-23

申请号：US13933355

申请日：2013-07-02

Applicant: Ultratech, Inc.

Inventor： Arthur W. Zafiropoulo ,  Andrew M. Hawryluk

IPC: G21H1/06 ,  G21H1/02 ,  B60L11/18 ,  G21H1/00 ,  B60L11/00

CPC classification number: B60L11/18 ,  B60L11/002 ,  G21H1/00 ,  G21H1/06

Abstract: A betavoltaic power source for transportation devices and applications is disclosed, wherein the device having a stacked configuration of isotope layers and energy conversion layers. The isotope layers have a half-life of between about 0.5 years and about 5 years and generate radiation with energy in the range from about 15 keV to about 200 keV. The betavoltaic power source is configured to provide sufficient power to operate the transportation device over its useful lifetime.

Abstract translation: 公开了用于运输设备和应用的贝塔伏特电源，其中所述设备具有同位素层和能量转换层的堆叠配置。 同位素层的半衰期在约0.5年至约5年之间，并产生能量在约15keV至约200keV范围内的辐射。 贝塔伏特电源被配置为提供足够的功率以在其使用寿命期间操作运输装置。

公开(公告)号：US20150371911A1

公开(公告)日：2015-12-24

申请号：US14311747

申请日：2014-06-23

Applicant: Ultratech, Inc.

Inventor： James T. McWhirter ,  Andrew Hawryluk ,  Serguei Anikitichev ,  Masoud Safa

IPC: H01L21/66 ,  B23K26/03 ,  B23K26/00 ,  H01L21/324 ,  H01L21/268

CPC classification number: H01L22/26 ,  B23K26/034 ,  H01L21/268 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/67248 ,  H01L22/10

Abstract: Systems and methods for reducing beam instability in laser annealing are disclosed. The method includes: directing a conditioned laser beam through an opening in an aperture using a beam-redirecting element; forming a line image on the surface of the semiconductor wafer by imaging the aperture onto the surface, thereby locally heating the surface to form an annealing temperature distribution; detecting a thermal emission from the locally heated wafer surface; determining the annealing temperature distribution from the detected thermal emission; determining from the annealing temperature distribution a line-image intensity profile that includes a time-varying amount of slope; and adjusting the beam-redirecting element to redirect the laser beam to reduce or eliminate the time-varying amount of slope in the line-image intensity profile.

Abstract translation: 公开了用于减少激光退火中的束不稳定性的系统和方法。 该方法包括：使用光束重定向元件将经调节的激光束引导通过孔中的开口; 通过将孔成像到表面上，在半导体晶片的表面上形成线图像，从而局部加热表面以形成退火温度分布; 检测来自局部加热的晶片表面的热发射; 从所检测的热发射确定退火温度分布; 从退火温度分布确定包括时变量斜率的线图像强度分布; 并且调整光束重定向元件以重定向激光束以减少或消除线图像强度分布中的时间变化量的斜率。

公开(公告)号：US20150041431A1

公开(公告)日：2015-02-12

申请号：US13961655

申请日：2013-08-07

Applicant: Ultratech, Inc.

Inventor： Arthur W. Zafiropoulo ,  Andrew M. Hawryluk

IPC: H01L21/027 ,  H01L21/3065 ,  H01L21/308

CPC classification number: H01L21/0273 ,  G03F7/168 ,  G03F7/26 ,  G03F7/38 ,  G03F7/40 ,  G03F7/405 ,  H01L21/67069

Abstract: Methods of laser processing photoresist in a gaseous environment to improve at least one of etch resistance and line-edge roughness are disclosed. The methods include sequentially introducing first and second molecular gases to the photoresist surface and performing respective first and second laser scanning of the surface for each molecular gas. The first molecular gas can be trimethyl aluminum, titanium tetrachloride or diethyl zinc, and the second molecular gas comprises water vapor. Short dwell times prevent the photoresist from flowing while serving to speed up the photoresist enhancement process.

公开(公告)号：US08872408B2

公开(公告)日：2014-10-28

申请号：US13863283

申请日：2013-04-15

Applicant: Ultratech, Inc.

Inventor： Arthur W. Zafiropoulo ,  Andrew M. Hawryluk

IPC: G21H1/00 ,  G21H1/02 ,  G21H1/06

CPC classification number: G21H1/02 ,  G21H1/06

Abstract: A betavoltaic power source for mobile devices and mobile applications includes a stacked configuration of isotope layers and energy conversion layers. The isotope layers have a half-life of between about 0.5 years and about 5 years and generate radiation with energy in the range from about 15 keV to about 200 keV. The betavoltaic power source is configured to provide sufficient power to operate the mobile device over its useful lifetime.

Abstract translation: 用于移动设备和移动应用的贝塔伏特电源包括同位素层和能量转换层的堆叠配置。 同位素层的半衰期在约0.5年至约5年之间，并产生能量在约15keV至约200keV范围内的辐射。 贝塔伏特电源被配置为提供足够的功率来在其使用寿命期间操作移动设备。

公开(公告)号：US08865603B2

公开(公告)日：2014-10-21

申请号：US13909542

申请日：2013-06-04

Applicant: Ultratech, Inc.

Inventor： Andrew M. Hawryluk ,  Serguei Anikitchev

IPC: H01L21/66 ,  H01L21/324 ,  B23K26/00 ,  B23K26/06 ,  H01L21/268 ,  B23K26/03 ,  H01L21/263 ,  B23K26/08 ,  B23K26/073 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01L21/324 ,  B23K26/0006 ,  B23K26/032 ,  B23K26/0608 ,  B23K26/0648 ,  B23K26/0736 ,  B23K26/082 ,  B23K26/354 ,  B23K2101/40 ,  B23K2103/56 ,  H01L21/02675 ,  H01L21/02691 ,  H01L21/268 ,  H01L21/67115 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Laser annealing systems and methods for annealing a semiconductor wafer with ultra-short dwell times are disclosed. The laser annealing systems can include one or two laser beams that at least partially overlap. One of the laser beams is a pre-heat laser beam and the other laser beam is the annealing laser beam. The annealing laser beam scans sufficiently fast so that the dwell time is in the range from about 1 μs to about 100 μs. These ultra-short dwell times are useful for annealing product wafers formed from thin device wafers because they prevent the device side of the device wafer from being damaged by heating during the annealing process. Embodiments of single-laser-beam annealing systems and methods are also disclosed.

Abstract translation: 公开了具有超短停留时间的半导体晶片退火的激光退火系统和方法。 激光退火系统可以包括至少部分重叠的一个或两个激光束。 其中一个激光束是预热激光束，另一个激光束是退火激光束。 退火激光束扫描足够快，使得停留时间在约1μs至约100μs的范围内。 这些超短停留时间对于退火由薄的器件晶片形成的产品晶片是有用的，因为它们防止器件晶片的器件侧在退火过程中被加热而损坏。 还公开了单激光束退火系统和方法的实施例。

公开(公告)号：US20140094007A1

公开(公告)日：2014-04-03

申请号：US14046414

申请日：2013-10-04

Applicant: Ultratech, Inc.

Inventor： Paul Stephen Andry ,  Edmund Juris Sprogis ,  Cornelia Kang-I Tsang

IPC: H01L23/00

CPC classification number: H01L24/19 ,  H01L21/76898 ,  H01L21/823871 ,  H01L23/481 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/14 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/05572 ,  H01L2224/06181 ,  H01L2224/131 ,  H01L2224/14181 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/05552

Abstract: A through silicon via structure and a method of fabricating the through silicon via. The method includes: (a) forming a trench in a silicon substrate, the trench open to a top surface of the substrate; (b) forming a silicon dioxide layer on sidewalls of the trench, the silicon dioxide layer not filling the trench; (c) filling remaining space in the trench with polysilicon; after (c), (d) fabricating at least a portion of a CMOS device in the substrate; (e) removing the polysilicon from the trench, the dielectric layer remaining on the sidewalls of the trench; (f) re-filling the trench with an electrically conductive core; and after (f), (g) forming one or more wiring layers over the top surface of the substrate, a wire of a wiring level of the one or more wiring levels closest to the substrate contacting a top surface of the conductive core.

Abstract translation: 一种硅通孔结构和一种制造通硅通孔的方法。 该方法包括：（a）在硅衬底中形成沟槽，沟槽通向衬底的顶表面; （b）在所述沟槽的侧壁上形成二氧化硅层，所述二氧化硅层不填充所述沟槽; （c）用多晶硅填充沟槽中的剩余空间; （c）之后，（d）在衬底中制造至少一部分CMOS器件; （e）从所述沟槽去除所述多晶硅，所述电介质层残留在所述沟槽的侧壁上; （f）用导电芯重新填充沟槽; 在（f）之后，（g）在衬底的顶表面上形成一个或多个布线层，与接触导电芯的顶表面的最接近衬底的一个或多个布线层的布线层的布线。

公开(公告)号：US20130273751A1

公开(公告)日：2013-10-17

申请号：US13913045

申请日：2013-06-07

Applicant: Ultratech, Inc.

Inventor： Yun Wang ,  Shaoyin Chen

IPC: H01L21/263

CPC classification number: H01L21/263 ,  B23K26/0006 ,  B23K26/082 ,  B23K26/0823 ,  B23K26/352 ,  B23K2103/56 ,  C30B1/06 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/02691

Abstract: Provided are systems and methods for processing the surface of substrates that scan a laser beam at one or more selected orientation angles. The orientation angle or angles may be selected to reduce substrate warpage. When the substrates are semiconductor wafers having microelectronic devices, the orientation angles may be selected to produce controlled strain and to improve electronic performance of the devices.

Abstract translation: 提供了用于处理以一个或多个选定取向角度扫描激光束的基板表面的系统和方法。 可以选择取向角或角度以减少基板翘曲。 当衬底是具有微电子器件的半导体晶片时，可以选择取向角以产生受控应变并改善器件的电子性能。

公开(公告)号：US20130105971A1

公开(公告)日：2013-05-02

申请号：US13723090

申请日：2012-12-20

Applicant: Ultratech, Inc.

Inventor： Timothy H. Daubenspeck ,  Timothy D. Sullivan

IPC: H01L23/488

CPC classification number: H01L23/488 ,  H01L24/05 ,  H01L24/13 ,  H01L24/45 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05022 ,  H01L2224/05541 ,  H01L2224/05557 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/13007 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/45147 ,  H01L2224/48824 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/207 ,  H01L2924/00 ,  H01L2224/05552

Abstract: Structure and methods of making the structures. The structures include a structure, comprising: an organic dielectric passivation layer extending over a substrate; an electrically conductive current spreading pad on a top surface of the organic dielectric passivation layer; an electrically conductive solder bump pad comprising one or more layers on a top surface of the current spreading pad; and an electrically conductive solder bump containing tin, the solder bump on a top surface of the solder bump pad, the current spreading pad comprising one or more layers, at least one of the one or more layers consisting of a material that will not form an intermetallic with tin or at least one of the one or more layers is a material that is a diffusion barrier to tin and adjacent to the solder bump pad.

Abstract translation: 制作结构的结构和方法。 所述结构包括结构，包括：在衬底上延伸的有机介电钝化层; 在所述有机介电钝化层的顶表面上的导电电流扩散焊盘; 导电焊料凸块焊盘，其在电流扩散焊盘的顶表面上包括一层或多层; 以及包含锡的导电焊料凸块，所述焊料凸块在所述焊料凸块焊盘的顶表面上，所述电流扩散焊盘包括一个或多个层，所述一个或多个层中的至少一个由不会形成 金属间化合物与锡或一层或多层中的至少一层是对锡的扩散阻挡层并且与焊料凸块相邻的材料。

公开(公告)号：US20190284689A1

公开(公告)日：2019-09-19

申请号：US16429850

申请日：2019-06-03

Applicant: Ultratech, Inc.

Inventor： Mark Sowa ,  Robert Kane ,  Michael Sershen

IPC: C23C16/44 ,  C23C16/52 ,  C23C16/50 ,  C23C16/455 ,  H01J37/32

Abstract: An improved Plasma Enhanced Atomic Layer Deposition (PEALD) system and related operating methods are disclosed. A vacuum reaction chamber includes a vacuum system that separates a first outflow from the reaction chamber, comprising unreacted first precursor, from a second outflow from the reaction chamber, comprising second precursor and any reaction by products from the reaction of the second precursor with the coating surfaces. A trap, including trap material surfaces, is provided to remove first precursor from the first outflow when the first precursor reacts with the trap material surfaces. When the second precursor includes a plasma generated material, the second precursor is not passed through the trap. An alternate second precursor source injects a suitable second precursor into the trap to complete a material deposition layer onto the trap surfaces thereby preparing the trap material surfaces to react with the first precursor on the next material deposition cycle.

公开(公告)号：US10316406B2

公开(公告)日：2019-06-11

申请号：US15295813

申请日：2016-10-17

Applicant: Ultratech, Inc.

Inventor： Laurent Lecordier

IPC: C23C16/02 ,  C22B5/12 ,  C22B15/00 ,  C23C16/455 ,  C23C16/56 ,  H01L21/02 ,  C23C16/04

Abstract: Methods of forming an ALD-inhibiting layer using a layer of SAM molecules include providing a metalized substrate having a metal M and an oxide layer of the metal M. A reduction gas that includes a metal Q is used to reduce the oxide layer of the metal M, leaving a layer of form of M+MQyOx atop the metal M. The SAM molecules are provided as a vapor and form an ALD-inhibiting SAM layer on the M+MQyOx layer. Methods of performing S-ALD using the ALD-inhibiting SAM layer are also disclosed.