公开(公告)号：US20240096622A1

公开(公告)日：2024-03-21

申请号：US17950001

申请日：2022-09-21

Applicant: Tokyo Electron Limited

Inventor： Steven Grzeskowiak ,  Eric Chih-Fang Liu

IPC: H01L21/027 ,  G03F7/20 ,  H01J37/32

CPC classification number: H01L21/027 ,  G03F7/70033 ,  G03F7/70733 ,  H01J37/32743 ,  H01J37/32899 ,  H01J2237/334

Abstract: An embodiment etching tool includes an etch chamber for plasma etching a first wafer to be processed; a transfer chamber coupled to the etch chamber; a first run path between the transfer chamber and the etch chamber, the first run path including a path for moving the first wafer to be processed from the transfer chamber to the etch chamber, where the etching tool is configured to dry develop the first wafer to be processed before etching a hard mask on the first wafer in the etch chamber.

公开(公告)号：US11929278B2

公开(公告)日：2024-03-12

申请号：US17324495

申请日：2021-05-19

Applicant: Applied Materials, Inc.

Inventor： Madhu Santosh Kumar Mutyala ,  Saketh Pemmasani ,  Akshay Dhanakshirur ,  Mayur Govind Kulkarni ,  Hang Yu ,  Deenesh Padhi

IPC: H01L21/683 ,  C23C16/458 ,  H01J37/32

CPC classification number: H01L21/6833 ,  C23C16/4583 ,  H01J37/32724 ,  H01J37/32091 ,  H01J37/32899 ,  H01J2237/2007 ,  H01J2237/332

Abstract: Exemplary substrate support assemblies may include an electrostatic chuck body that defines a substrate support surface. The substrate support surface may define a plurality of protrusions that extend upward from the substrate support surface. A density of the plurality of protrusions within an outer region of the substrate support surface may be greater than in an inner region of the substrate support surface. The substrate support assemblies may include a support stem coupled with the electrostatic chuck body. The substrate support assemblies may include an electrode embedded within the electrostatic chuck body.

公开(公告)号：US20240078663A1

公开(公告)日：2024-03-07

申请号：US18462386

申请日：2023-09-06

Applicant: PSK INC.

Inventor： KWANG SUNG YOO ,  GEON JONG KIM

IPC: G06T7/00 ,  G06T7/11 ,  G06T7/174 ,  H01J37/32

CPC classification number: G06T7/001 ,  G06T7/11 ,  G06T7/174 ,  H01J37/32348 ,  H01J37/3288 ,  H01J37/32899 ,  H01J2237/221 ,  H01J2237/24592 ,  H01J2237/3341

Abstract: The inventive concept provides a substrate treating method. The substrate treating method includes treating an edge region of a substrate using a plasma; and acquiring an image to be determined by imaging a substrate on which a treatment has been completed in the treating the edge region, comparing the image to be determined with an image stored in a database, and determining whether a substrate treated in the treating the edge region is defective or not, and wherein the image stored in the database is a defective image of a substrate which has been determined as defective, which is previously stored in the database in the acquiring the image to be determined.

公开(公告)号：US11897811B2

公开(公告)日：2024-02-13

申请号：US17589498

申请日：2022-01-31

Applicant: INTEVAC, INC.

Inventor： Terry Bluck ,  Wendell Thomas Blonigan

IPC: C23C14/34 ,  C03C17/34 ,  C23C14/54 ,  C23C14/00 ,  C23C14/10 ,  C23C14/08 ,  C23C14/50 ,  C08J7/04 ,  C23C14/56 ,  H01J37/32 ,  B05D5/06 ,  B32B17/10 ,  C03C17/42 ,  G02B1/111 ,  G02B1/116

CPC classification number: C03C17/3417 ,  B05D5/063 ,  B32B17/10174 ,  C03C17/3441 ,  C03C17/3482 ,  C03C17/42 ,  C08J7/0423 ,  C23C14/0052 ,  C23C14/0089 ,  C23C14/081 ,  C23C14/10 ,  C23C14/3442 ,  C23C14/3464 ,  C23C14/505 ,  C23C14/548 ,  C23C14/568 ,  G02B1/111 ,  G02B1/116 ,  H01J37/32899 ,  C03C2217/734 ,  C03C2217/76

Abstract: A processing system for forming an optical coating on a substrate is provided, wherein the optical coating including an anti-reflective coating and an oleophobic coating, the system comprising: a linear transport processing section configured for processing and transporting substrate carriers individually and one at a time in a linear direction; at least one evaporation processing system positioned in the linear transport processing system, the evaporation processing system configured to form the oleophobic coating; a batch processing section configured to transport substrate carriers in unison about an axis; at least one ion beam assisted deposition processing chamber positioned in the batch processing section, the ion beam assisted deposition processing chamber configured to deposit layer of the anti-reflective coating; a plurality of substrate carriers for mounting substrates; and, means for transferring the substrate carriers between the linear transport processing section and the batch processing section without exposing the substrate carrier to atmosphere.

公开(公告)号：US20230402268A1

公开(公告)日：2023-12-14

申请号：US17836657

申请日：2022-06-09

Applicant: Applied Materials, Inc.

Inventor： Songjae LEE ,  Masato ISHII ,  Martin TRUEMPER ,  Richard O. COLLINS ,  Martin Jeffrey SALINAS ,  Yong ZHENG ,  Anita ZHAO ,  Adele MARIADASS ,  Christophe MARCADAL ,  Henry BARANDICA ,  Ernesto J. ULLOA

IPC: H01J37/32 ,  C23C14/02 ,  B08B7/00 ,  B08B13/00

CPC classification number: H01J37/32834 ,  H01J37/32449 ,  H01J37/32357 ,  H01J37/32899 ,  C23C14/022 ,  B08B7/0035 ,  B08B13/00 ,  H01J37/32825 ,  H01J2237/335 ,  H01J2237/186 ,  H01J2237/182

Abstract: A plasma processing system for cleaning a substrate is provided. The plasma processing system includes a process chamber that includes: a chamber body enclosing an interior volume; and a substrate support disposed in the interior volume. The plasma processing system includes a vacuum pump; a first exhaust line fluidly coupled between the interior volume of the process chamber and the vacuum pump; and a second exhaust line fluidly coupled between the interior volume of the process chamber and the vacuum pump. The first exhaust line and the second exhaust line are arranged to provide alternative paths for the exhaust between the interior volume and the vacuum pump, and the first exhaust line has an internal diameter that is at least 50% smaller than the internal diameter of the second exhaust line.

公开(公告)号：US20230369031A1

公开(公告)日：2023-11-16

申请号：US18127213

申请日：2023-03-28

Applicant: Applied Materials, Inc.

Inventor： Tomohiko Kitajima ,  Ning Li ,  Chang Seok Kang ,  Naomi Yoshida

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/67 ,  C23C16/02 ,  C23C16/56 ,  C23C16/34 ,  C23C16/36 ,  C23C16/38

CPC classification number: H01J37/32899 ,  H01L21/0217 ,  H01L21/0234 ,  H01L21/67167 ,  C23C16/0227 ,  C23C16/56 ,  C23C16/345 ,  C23C16/36 ,  C23C16/38 ,  C23C16/342 ,  H01J2237/335 ,  H01J2237/332 ,  H01J2237/336 ,  H01J37/32816 ,  H01J2237/20278

Abstract: Methods of manufacturing memory devices are provided. The method comprises pre-cleaning a top surface of a film stack, the film stack comprising alternating layers of a first material layer and a second material layer and having one or more of a memory hole and a slit pattern opening extending through the film stack; exposing the top surface of the film stack to a growth inhibitor; selectively depositing a silicon-containing dielectric layer in a region of the film stack; and densifying the silicon-containing dielectric layer. The processing method is performed in a processing tool without breaking vacuum.

公开(公告)号：US11798788B2

公开(公告)日：2023-10-24

申请号：US17091433

申请日：2020-11-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Ki Nam ,  Sunggil Kang ,  Sungyong Lim ,  Beomjin Yoo ,  Akira Koshiishi ,  Vasily Pashkovskiy ,  Kwangyoub Heo

IPC: H01L21/3065 ,  H01J37/32 ,  H01J1/02

CPC classification number: H01J37/32596 ,  H01J1/025 ,  H01J37/32009 ,  H01J37/32899

Abstract: A hollow cathode includes an insulation plate having cathode holes. Bottom electrodes are below the insulation plate. The bottom electrodes define first holes having a width greater than a width of the cathode holes. Top electrodes are at an opposite side of the insulation plate from the bottom electrodes. The top electrodes define second holes aligned with the first holes along a direction orthogonal to the upper surface of the insulation plate.

公开(公告)号：US20230317480A1

公开(公告)日：2023-10-05

申请号：US18129473

申请日：2023-03-31

Applicant: Tokyo Electron Limited

Inventor： Masahiro DOGOME

IPC: H01L21/67 ,  H01L21/677 ,  H01L21/687 ,  H01J37/32

CPC classification number: H01L21/67196 ,  H01L21/67739 ,  H01L21/68792 ,  H01J37/32513 ,  H01J37/32899 ,  H01J2237/166 ,  H01J2237/186

Abstract: A gate valve apparatus and a semiconductor manufacturing apparatus, in which a volume of a drive portion for driving a valve body is reduced, are provided. The gate valve apparatus includes a housing having an opening, a valve body configured to open and close the opening, and a drive portion configured to drive the valve body, in which the drive portion includes a first crankshaft including a first input shaft rotatably supported by a side wall of the housing and a first output shaft rotatably supported by the valve body, a second crankshaft including a second input shaft rotatably supported by the side wall of the housing and a second output shaft rotatably supported by the valve body, a rotation transmission portion configured to transmit rotation of the first input shaft to the second input shaft, and an actuator configured to rotate the first input shaft.

公开(公告)号：US11742189B2

公开(公告)日：2023-08-29

申请号：US16251534

申请日：2019-01-18

Applicant: ASM IP Holding B.V.

Inventor： Carl Louis White ,  Mohith Verghese ,  Eric James Shero ,  Todd Robert Dunn

IPC: H01J37/32

CPC classification number: H01J37/32899 ,  H01J37/3244 ,  H01J37/32513 ,  H01J37/32715 ,  H01J37/32733

Abstract: Multi-zone reactors, systems including a multi-zone reactor, and methods of using the systems and reactors are disclosed. Exemplary multi-zone reactors include a movable susceptor assembly and a moveable plate. The movable susceptor assembly and movable plate can move vertically between reaction zones of a reactor to expose a substrate to multiple processes or reactants.

公开(公告)号：US11710619B2

公开(公告)日：2023-07-25

申请号：US14468397

申请日：2014-08-26

Applicant: Hitachi High-Technologies Corporation

Inventor： Kohei Sato ,  Akitaka Makino ,  Kazuumi Tanaka ,  Yusaku Sakka

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32082 ,  H01J37/32733 ,  H01J37/32899 ,  H01L21/6719 ,  H01L21/67184

Abstract: A vacuum processing apparatus that can excellently perform uniform processing and can efficiently perform regular maintenance and occasional maintenance even in the case where the diameter of a workpiece is increased. A vacuum processing apparatus having a vacuum transport chamber includes: a lower container in a cylindrical shape; a sample stage unit including a sample stage and a ring-shaped sample stage base having a support beam disposed in axial symmetry with respect to the center axis of the sample stage; an upper container in a cylindrical shape; and a moving unit that is fixed to the sample stage base and moves the sample stage unit in the vertical direction and in the horizontal direction.