公开(公告)号：WO2017009036A1

公开(公告)日：2017-01-19

申请号：PCT/EP2016/065027

申请日：2016-06-28

Applicant: ASML NETHERLANDS B.V.

Inventor： BIJNEN, Franciscus, Godefridus, Casper ,  DEN BOEF, Arie, Jeffrey ,  VAN HAREN, Richard, Johannes, Franciscus ,  TINNEMANS, Patricius, Aloysius, Jacobus ,  YPMA, Alexander ,  LYULINA, Irina, Anatolievna ,  HULSEBOS, Edo, Maria ,  CEKLI, Hakki, Ergün ,  LIU, Xing, Lan ,  VERHEES, Loek, Johannes, Petrus ,  CALADO, Victor, Emanuel ,  VAN DIJK, Leon, Paul

IPC: G03F9/00 ,  G03F7/20

CPC classification number: G03F9/7092 ,  G03F7/70508 ,  G03F7/70633 ,  G03F9/7046

Abstract: A method of characterizing a deformation of a plurality of substrates is described. The method comprising the steps of: - measuring, for a plurality of n different alignment measurement parameters λ and for a plurality of substrates, a position of the alignment marks; - determining a positional deviation as the difference between the n alignment mark position measurements and a nominal alignment mark position; - grouping the positional deviations into data sets; - determining an average data set; - subtracting the average data set from the data sets to obtain a plurality of variable data sets; - performing a blind source separation method on the variable data sets, thereby decomposing the variable data sets into a set of eigenwafers representing principal components of the variable data sets; - subdividing the set of eigenwafers into a set of mark deformation eigenwafers and a set of substrate deformation eigenwafers.

Abstract translation: 描述了表征多个基板的变形的方法。 该方法包括以下步骤： - 对于多个n个不同对准测量参数λ和多个基板，测量对准标记的位置; - 将位置偏差确定为n个对准标记位置测量值和标称对准标记位置之间的差; - 将位置偏差分组成数据集; - 确定平均数据集; - 从数据集中减去平均数据集以获得多个可变数据集; - 对可变数据集执行盲源分离方法，从而将可变数据集分解为表示可变数据集的主要分量的一组特征向量; - 将一组特征晶体细分成一组标记变形本征晶体和一组基底变形本征晶体。

公开(公告)号：WO2019025142A1

公开(公告)日：2019-02-07

申请号：PCT/EP2018/068751

申请日：2018-07-11

Applicant: ASML NETHERLANDS B.V.

Inventor： CALADO, Victor, Emanuel ,  VAN HAREN, Richard, Johannes, Franciscus ,  DEPRE, Jerome, Yann, Remi ,  MASSACRIER, Clément, André, Auguste

IPC: G03F7/20 ,  B24B37/005 ,  G01N21/47 ,  G01N21/84 ,  H01L21/67

Abstract: A device manufacturing method comprising: forming a layer on a substrate by a layer-forming process; determining a value of a metric at a plurality of positions across the substrate, wherein variation of the values across the substrate is indicative of variation of layer thickness across the substrate; controlling the layer-forming parameter based on the values so as to reduce variation of layer thickness in a subsequent layer-forming process on a different substrate; and repeating the layer- forming process on a different substrate according to the controlled layer-forming parameter.

公开(公告)号：WO2021224009A1

公开(公告)日：2021-11-11

申请号：PCT/EP2021/060403

申请日：2021-04-21

Applicant: ASML NETHERLANDS B.V.

Inventor： ZWIER, Olger, Victor ,  VAN DER SCHAAR, Maurits ,  BOS, Hilko, Dirk ,  VAN DER LAAN, Hans ,  AL ARIF, S. M. Masudur Rahman ,  VAN BUEL, Henricus, Wilhelmus, Maria ,  KOOLEN, Armand, Eugene, Albert ,  CALADO, Victor, Emanuel ,  BHATTACHARYYA, Kaustuve ,  LIAN, Jin ,  GOORDEN, Sebastianus, Adrianus ,  LIM, Hui Quan

IPC: G01N21/47 ,  G01N21/95 ,  G01N21/956 ,  G03F1/42 ,  G03F7/20 ,  G03F9/00

Abstract: Disclosed is a substrate and associated patterning device. The substrate comprises at least one target arrangement suitable for metrology of a lithographic process, the target arrangement comprising at least one pair of similar target regions which are arranged such that the target arrangement is, or at least the target regions for measurement in a single direction together are, centrosymmetric. A metrology method is also disclosed for measuring the substrate. A metrology method is also disclosed comprising which comprises measuring such a target arrangement and determining a value for a parameter of interest from the scattered radiation, while correcting for distortion of the metrology apparatus used.

公开(公告)号：WO2018099690A1

公开(公告)日：2018-06-07

申请号：PCT/EP2017/078288

申请日：2017-11-06

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN HAREN, Richard, Johannes, Franciscus ,  CALADO, Victor, Emanuel ,  VAN DIJK, Leon, Paul ,  WERKMAN, Roy ,  MOS, Everhardus, Cornelis ,  WILDENBERG, Jochem, Sebastiaan ,  JOCHEMSEN, Marinus ,  RAJASEKHARAN, Bijoy ,  JENSEN, Erik ,  URBANCZYK, Adam, Jan

IPC: G03F7/20 ,  H01L21/30 ,  H01L21/67 ,  H01L21/66

Abstract: A method to change an etch parameter of a substrate etching process, the method comprising: making a first measurement of a first metric associated with a structure on a substrate before being etched; making a second measurement of a second metric associated with a structure on a substrate after being etched; and changing the etch parameter based on a difference between the first measurement and the second measurement.

公开(公告)号：WO2018095705A1

公开(公告)日：2018-05-31

申请号：PCT/EP2017/077958

申请日：2017-11-01

Applicant: ASML NETHERLANDS B.V.

Inventor： CALADO, Victor, Emanuel ,  ZHANG, Youping ,  VAN DER SCHAAR, Maurits ,  VAN HAREN, Richard, Johannes, Franciscus ,  LIU, Xing, Lan

IPC: G03F7/20 ,  G01N21/956

CPC classification number: G03F7/70633 ,  G03F7/70625 ,  G03F7/70683

Abstract: A method of measuring a parameter of a patterning process, the method including obtaining a measurement of a substrate processed by a patterning process, with a first metrology target measurement recipe; obtaining a measurement of the substrate with a second, different metrology target measurement recipe, wherein measurements using the first and second metrology target measurement recipes have their own distinct sensitivity to a metrology target structural asymmetry of the patterning process; and determining a value of the parameter by a weighted combination of the measurements of the substrate using the first and second metrology target measurement recipes, wherein the weighting reduces or eliminates the effect of the metrology target structural geometric asymmetry on the parameter of the patterning process determined from the measurements using the first and second metrology target measurement recipes.

公开(公告)号：WO2017029110A1

公开(公告)日：2017-02-23

申请号：PCT/EP2016/068426

申请日：2016-08-02

Applicant: ASML NETHERLANDS B.V.

Inventor： JAK, Martin, Jacobus, Johan ,  SMILDE, Hendrik, Jan, Hidde ,  HUANG, Te-Chih ,  CALADO, Victor, Emanuel ,  VAN BUEL, Henricus, Wilhelmus, Maria ,  VAN HAREN, Richard, Johannes, Franciscus

IPC: G03F7/20

CPC classification number: G03F7/7065 ,  G03F7/70633

Abstract: A substrate has a plurality of overlay gratings formed thereon by a lithographic process. Each overlay grating has a known overlay bias. The values of overlay bias include for example two values in a region centered on zero and two values in a region centered on P/2, where P is the pitch of the gratings. Overlay is calculated from asymmetry measurements for the gratings using knowledge of the different overlay bias values, each of the overall asymmetry measurements being weighted by a corresponding weight factor. Each one of the weight factors represents a measure of feature asymmetry within the respective overlay grating. The calculation is used to improve subsequent performance of the measurement process, and/or the lithographic process. Some of the asymmetry measurements may additionally be weighted by a second weight factor in order to eliminate or reduce the contribution of phase asymmetry to the overlay.

Abstract translation: 衬底具有通过光刻工艺在其上形成的多个覆盖光栅。 每个覆盖光栅具有已知的叠加偏置。 叠加偏置的值包括例如在以P为中心的区域中的零点和两个值的区域中的两个值，其中P是光栅的间距。 使用不同覆盖偏差值的知识，对光栅的不对称测量计算叠加，每个整体不对称测量由相应的权重因子加权。 每个权重因子表示相应叠加光栅内的特征不对称的度量。 该计算用于提高测量过程和/或光刻过程的后续性能。 另外可以通过第二加权因子来加权一些不对称测量值，以消除或减少相位不对称对叠加层的贡献。

公开(公告)号：WO2018108527A1

公开(公告)日：2018-06-21

申请号：PCT/EP2017/080770

申请日：2017-11-29

Applicant: ASML NETHERLANDS B.V.

Inventor： WARNAAR, Patrick ,  VAN DER SCHAAR, Maurits ,  GRZELA, Grzegorz ,  KOOP, Erik, Johan ,  CALADO, Victor, Emanuel ,  ZENG, Si-Han

IPC: G03F7/20

Abstract: A method of measuring a property of a substrate, the substrate having a plurality of targets formed thereon, the method comprising: measuring N targets of the plurality of targets using an optical measurement system, where N is an integer greater than 2 and each of said N targets is measured W t times, where W t is an integer greater than 2 so as to obtain N*W t measurement values; and determining R property values using Q equations and the N*W t measurement values, where R t ; wherein the optical measurement system has at least one changeable setting and, for each of the N targets, measurement values are obtained using different setting values of at least one changeable setting.

公开(公告)号：WO2018086825A1

公开(公告)日：2018-05-17

申请号：PCT/EP2017/076419

申请日：2017-10-17

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN DIJK, Leon, Paul ,  CALADO, Victor, Emanuel ,  LIU, Xing Lan ,  VAN HAREN, Richard, Johannes, Franciscus

IPC: G03F7/20 ,  G03F9/00

Abstract: A method of determining an optimal operational parameter setting of a metrology system is described. Free-form wafer shape measurements are performed (304). A model is applied (306), transforming the measured warp to modeled warp scaling values (308). Wafers are clamped to a chuck in a lithographic apparatus, causing wafer deformation. Alignment marks are measured using the scanner alignment system (312) with four alignment measurement colors. Scaling values (314) thus obtained are corrected (316) with the modeled warp scaling values (308) to determine corrected scaling values (318). The optimal alignment measurement color is determined, based on the corrected scaling values (318). Scaling values are selected that were measured using the optimal alignment measurement color and, at step (326), the wafer grid (328) is determined using the selected scaling values. A wafer is exposed (330) using the determined wafer grid (328) to correct exposure of the wafer.

Abstract translation: 描述了确定度量衡系统的最优操作参数设置的方法。 自由形式的晶片形状测量被执行（304）。 应用模型（306），将测量的扭曲变换为建模的扭曲比例值（308）。 晶片夹在光刻设备的卡盘中，导致晶片变形。 使用具有四种对准测量颜色的扫描仪对准系统（312）来测量对准标记。 用建模的扭曲比例值（308）校正（316）如此获得的比例值（314）以确定校正的比例值（318）。 基于校正的缩放值（318）确定最佳对准测量颜色。 选择使用最佳对准测量颜色测量的缩放值，并且在步骤（326），使用所选择的缩放值来确定晶片网格（328）。 使用所确定的晶圆网格（328）将晶圆暴露（330）以校正晶圆的曝光。

公开(公告)号：WO2017211544A1

公开(公告)日：2017-12-14

申请号：PCT/EP2017/061648

申请日：2017-05-16

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN DIJK, Leon, Paul ,  CALADO, Victor, Emanuel ,  ROELOFS, Willem, Seine, Christian ,  VAN HAREN, Richard, Johannes, Franciscus

IPC: G03F1/62

Abstract: Disclosed is a method of determining a pellicle compensation correction which compensates for a distortion of a patterning device resultant from mounting of a pellicle onto the patterning device. The method comprises determining a pellicle induced distortion from a first shape associated with the patterning device without the pellicle mounted and a second shape associated with the patterning device with the pellicle mounted, the pellicle induced distortion describing the distortion of the patterning device due to the pellicle being mounted. The determined pellicle induced distortion is then used to calculate the pellicle compensation correction for a lithographic exposure step using the patterning device.

Abstract translation: 公开了一种确定薄膜补偿校正的方法，所述方法补偿由将薄膜安装到图案形成装置上而导致的图案形成装置的变形。 该方法包括：从安装有防护薄膜组件的图案形成装置的第一形状和安装防护薄膜组件的图案形成装置的第二形状确定薄膜引起的变形，薄膜引起的变形描述由薄膜引起的图案形成装置的变形 被安装。 然后使用图案形成装置，使用所确定的薄膜诱导变形来计算用于光刻曝光步骤的薄膜补偿校正。

公开(公告)号：EP3438750A1

公开(公告)日：2019-02-06

申请号：EP17184435.0

申请日：2017-08-02

Applicant: ASML Netherlands B.V.

Inventor： CALADO, Victor, Emanuel ,  VAN HAREN, Richard, Johannes, Franciscus ,  DEPRE, Jerome, Yann, Remi ,  MASSACRIER, Clément, André, Auguste

IPC: G03F7/20 ,  B24B37/005 ,  G01N21/47 ,  G01N21/84 ,  H01L21/67

Abstract: A device manufacturing method comprising: forming a layer on a substrate by a layer-forming process; determining a value of a metric at a plurality of positions across the substrate, wherein variation of the values across the substrate is indicative of variation of layer thickness across the substrate; controlling the layer-forming parameter based on the values so as to reduce variation of layer thickness in a subsequent layer-forming process on a different substrate; and repeating the layer-forming process on a different substrate according to the controlled layer-forming parameter.