公开(公告)号：JPH10135202A

公开(公告)日：1998-05-22

申请号：JP28164197

申请日：1997-10-15

Applicant: IBM

Inventor： BROWN HUGH RALPH ,  KENETH RAYMOND CARTER ,  CHA HYUK-JIN ,  DIPIETRO RICHARD ANTHONY ,  JAMES LUPTON HEDRICK ,  HUMMEL JOHN PATRICK ,  ROBERT DENNIS MILLER ,  YOON DO YEUNG

IPC: C08G77/455 ,  C08G73/10 ,  C09D183/10 ,  H01L21/316 ,  H01L21/768 ,  H01L23/498 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To reduce required drive current and power consumption for the device, by laying interconnecting metal circuit lines on a substrate and disposing a specified dielectric material adjacent to the circuit lines. SOLUTION: The device comprises a substrate 2, meal circuit lines 4' and a dielectric material 6. The substrate 2 has vertical studs 8 formed therein. The dielectric material 6 in an org. polysilica, pref. a reaction product with polyaminate, having a terminal group (RO)m (R'')n SiR'-; m=1, 2 or 3, m+n=3, R and R' are hydrocarbyl group, R'' is hydride or hydrocarbyl group. The terminal group is a mono-, di- or tri-C1-C10 alkoxysilyl C1-10 alkyl or aryl group. This lowers the dielectric const. of the inserted dielectric material to allow the circuit line spacing to be reduced, without increasing the crosstalk or capacitive coupling, and also reduces the drive current and power consumption.

公开(公告)号：JP2000082716A

公开(公告)日：2000-03-21

申请号：JP19583399

申请日：1999-07-09

Applicant: IBM

Inventor： FEGER CLAUDIUS ,  HUMMEL JOHN PATRICK

IPC: H01L21/60 ,  H01L21/312 ,  H01L23/00

Abstract: PROBLEM TO BE SOLVED: To protect wiring such as Cu wiring, a semiconductor substrate of an IC and other mutually connecting structure by forming a polymer scratch proof/stress relaxation layer on an organic dielectric mutual connecting structure for embedding a metal vias, metal wirings and metal pads, and forming a polymer barrier layer thereon. SOLUTION: An organic dielectric mutual connecting structure 52 constituted of a semiconductor material processed from Si, Ge, GaAS, InAs, InP or the like and embedding bias 54, metal wiring 56 and metal pads 58 on an upper surface of a substrate 50 containing an active element region such as a transistor or the like is formed. The structure 52 is capped with a polymer layer 60 constituted of a material operating as a scratchproof/stress relaxation layer, and a polymer barrier layer 62 containing a polymer selected from the group consisting of fluoropolymer, polychlorofluoropolymer and hydrocarbon polymer is formed on the layer 60.

公开(公告)号：SG72884A1

公开(公告)日：2000-05-23

申请号：SG1998004543

申请日：1998-11-05

Applicant: IBM

Inventor： DUNCOMBE PETER RICHARD ,  HUMMEL JOHN PATRICK ,  LAIBOWITZ ROBERT BENJAMIN ,  NEUMAYER DEBORAH ANN ,  SAENGER KATHERINE LYNN ,  SCHROTT ALEJANDRO GABRIEL

IPC: H01L21/8247 ,  C23C8/12 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/04 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792

公开(公告)号：MY118011A

公开(公告)日：2004-08-30

申请号：MYPI9704493

申请日：1997-09-26

Applicant: IBM

Inventor： BROWN HUGH RALPH ,  CARTER KENNETH RAYMOND ,  CHA HYUK-JIN ,  DIPIETRO RICHARD ANTHONY ,  HEDRICK JAMES LUPTON ,  HUMMEL JOHN PATRICK ,  MILLER ROBERT DENNIS ,  YOON DO YEUNG

IPC: B32B3/10 ,  C08G77/455 ,  B32B15/08 ,  C08G73/10 ,  C09D183/10 ,  H01L21/316 ,  H01L21/48 ,  H01L21/768 ,  H01L23/498 ,  H01L23/522

Abstract: THE INVENTION RELATES TO AN INTEGRATED CIRCUIT DEVICE COMPRISING (I) A SUBSTRATE (2, 18); (II) METALLIC CIRCUIT LINES (4, 14, 16) POSITIONED ON THE SUBSTRATE AND (III) A DIELECTRIC MATERIAL (6, 10, 24) POSITIONED ON THE CIRCUIT LINES. THE DIELECTRIC MATERIAL COMPRISES THE REACTION PRODUCT OF AN ORGANIC POLYSILICA AND POLYAMIC ESTER PREFERABLY TERMINATED WITH AN ALKOXYSILYL ALKYL GROUP. (FIG. 1)

公开(公告)号：SG63750A1

公开(公告)日：1999-03-30

申请号：SG1997003478

申请日：1997-09-20

Applicant: IBM

Inventor： BROWN HUGH RALPH ,  CARTER KENNETH RAYMOND ,  CHA HYUK-JIN ,  DIPIETRO RICHARD ANTHONY ,  HEDRICK JAMES LUPTON ,  HUMMEL JOHN PATRICK ,  MILLER ROBERT DENNIS ,  YOON DO YEUNG

IPC: C08G77/455 ,  C08G73/10 ,  C09D183/10 ,  H01L21/316 ,  H01L21/768 ,  H01L23/498 ,  H01L23/522 ,  H01L21/312 ,  H01L21/48

Abstract: The invention relates to an integrated circuit device comprising (i) a substrate; (ii) metallic circuit lines positioned on the substrate and (iii) a dielectric material positioned on the circuit lines. The dielectric material comprises the reaction product of an organic polysilica and polyamic ester preferably terminated with an alkoxysilyl alkyl group.