公开(公告)号：JP2002216606A

公开(公告)日：2002-08-02

申请号：JP2001355091

申请日：2001-11-20

Applicant: IBM

Inventor： PETRARCA KEVIN ,  ROBERT A GROVES ,  HERBST BRIAN ,  JAHNES CHRISTOPHER ,  VOLANT RICHARD

IPC: B81B3/00 ,  H01H59/00

Abstract: PROBLEM TO BE SOLVED: To provide a new micromini electromechanical(MEM) switch. SOLUTION: This MEM switch contains a guide post formed on a substrate. A signal transmission line having a gap to form an open-circuit is produced on the substrate. The switch also contains a switch body internally-provided with a via opening, which is movably-located along the length demarcated by the guide post. The guide post is partially enclosed with the via opening.

公开(公告)号：JP2000150661A

公开(公告)日：2000-05-30

申请号：JP29884299

申请日：1999-10-20

Applicant: IBM

Inventor： ROBERT A GROVES ,  DALE K JEIDASU ,  DOMINIC L NUYEN-NOCK ,  KEITH M WAYLER

IPC: H01L21/331 ,  H01L21/768 ,  H01L21/8222 ,  H01L27/082 ,  H01L29/06 ,  H01L29/73 ,  H01L29/732

Abstract: PROBLEM TO BE SOLVED: To provide a structure of transistor which can be included in a transistor array for application of low noise and high electric power. SOLUTION: This transistor array is provided with a plurality of transistors. Every transistor is provided with an emitter. An emitter area contact 303 is on every emitter area. At least one base area 301 is beneath every emitter area 303, and it is common to a plurality of transistors in the array. At least one base contact 302 is at least on one base area, and it is related to every transistor. A plurality of base contacts are common to at least two transistors in the array. At least one collector reach through is related to every transistor. A collector reach through contact 306 is on every collector reach through.

公开(公告)号：JP2003249137A

公开(公告)日：2003-09-05

申请号：JP2002330991

申请日：2002-11-14

Applicant: IBM

Inventor： GREENBERG DAVID R ,  DELIGIANNI HARIKLIA ,  ROBERT A GROVES ,  CHRISTOPHER V JARNES ,  LUND JENNIFER L ,  CATHERINE L SAENGER ,  VOLANT RICHARD P

IPC: B81B3/00 ,  H01H1/24 ,  H01H1/26 ,  H01H59/00

Abstract: PROBLEM TO BE SOLVED: To provide a fine electric mechanical switch having a restoring force large enough to overcome static friction. SOLUTION: This fine electric mechanical switch comprises a conductive beam 10 capable of being warped, and a plurality of electrodes which are covered with elastically deformable conductive layers 11. At first, a restoring force is generated by a single spring constant k0 of the beam 10 by applying a control voltage between the beam 10 capable of being warped and a control electrode 12 which is flush with a switch electrode 13. Then, when the fine electric mechanical switch is approached to the closed state and the conductive layers 11 are compressed, restoring forces due to additional spring constants, k1,..., kn of the plurality of deformable conductive layers 11 are sequentially added to the restoring force due to the spring constant k0 of the beam 10. In another embodiment, deformable spring-like elements are used in place of the deformable layers. Furthermore in the other embodiment, compressible layers or the deformable spring-like elements are mounted on the warping beam which is opposed to the switch electrode. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2013048274A

公开(公告)日：2013-03-07

申请号：JP2012233911

申请日：2012-10-23

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Machines Corporation

Inventor： METE ERTURK ,  ROBERT A GROVES ,  JEFFREY B JOHNSON ,  ALVIN J JOSEPH ,  LIU QIZHI ,  EDMUND J SPROGIS ,  ANTHONY K STAMPER

IPC: H01L21/3205 ,  H01L21/331 ,  H01L21/768 ,  H01L21/8222 ,  H01L21/8248 ,  H01L21/8249 ,  H01L23/522 ,  H01L27/06 ,  H01L29/737

CPC classification number: H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a backside contact structure and a method of fabricating the structure.SOLUTION: The method includes: forming a first dielectric layer 105 on a frontside of a substrate 100 having the frontside and an opposing backside; forming an electrically conductive first stud contact 140B in the first dielectric layer, the first stud contact extending through the first dielectric layer to the frontside of the substrate; thinning the substrate from the backside of the substrate to form a new backside of the substrate; forming a trench 165 in the substrate, the trench extending from the new backside of the substrate to the first dielectric layer, to expose a bottom surface of the first stud contact in the trench; and forming a conformal electrically conductive layer 170, 175 on the new backside of the substrate, sidewalls of the trench, exposed surfaces of the first dielectric layer and exposed surfaces of the first stud contacts, where the conductive layer is not thick enough to completely fill the trench.

Abstract translation: 要解决的问题：提供一种背面接触结构和制造该结构的方法。 解决方案：该方法包括：在具有前侧和相对的背面的基板100的前侧形成第一电介质层105; 在所述第一电介质层中形成导电的第一螺柱触头140B，所述第一螺柱触头延伸穿过所述第一电介质层到所述衬底的前侧; 从衬底的背面稀释衬底以形成衬底的新背面; 在衬底中形成沟槽165，沟槽从衬底的新背面延伸到第一介电层，以暴露沟槽中的第一柱形触头的底表面; 并且在衬底的新背面上形成共形导电层170,175，沟槽的侧壁，第一介电层的暴露表面和第一螺柱触头的暴露表面，其中导电层不够厚以至完全填充 沟渠。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2002033395A

公开(公告)日：2002-01-31

申请号：JP2001160150

申请日：2001-05-29

Applicant: IBM

Inventor： GREGORY G FREEMAN ,  ROBERT A GROVES ,  JEFFREY JOHNSON ,  SESHADORI SUBANA ,  VOLANT RICHARD P

IPC: H01L29/73 ,  H01L21/331 ,  H01L21/768 ,  H01L21/8222 ,  H01L21/8248 ,  H01L21/8249 ,  H01L27/06 ,  H01L27/082

Abstract: PROBLEM TO BE SOLVED: To improve the high-frequency performance of transistor design, and a manufacturing yield by combining processes from various techniques for eliminating and reducing the source of parasitic capacity. SOLUTION: Collector, base, and emitter regions are formed on a substrate, a second substrate is mounted, an original substrate is completely or partially removed, a non-active collector region is removed or is set to a semi-insulator, and wiring and contact are performed from the original back surface of a chip. A dielectric material used in a manufacturing process is removed, thus further reducing electrostatic capacity. A high-frequency transistor is jointed to a CMOS chip or a wafer, thus forming a BICMOS chip.

公开(公告)号：SG96261A1

公开(公告)日：2003-05-23

申请号：SG200107065

申请日：2001-11-13

Applicant: IBM

Inventor： KEVIN PETRARCA ,  ROBERT A GROVES ,  BRIAN HERBST ,  CHRISTOPHER JAHNES ,  RICHARD VOLANT

IPC: B81B3/00 ,  H01H59/00 ,  H01P1/10

Abstract: A micro electromechanical switch has a guidepost formed upon a substrate. A signal transmission line is formed on the substrate, with the signal transmission line having a gap and forming an open circuit. The switch further includes a switch body having a via opening formed therein, with the switch body being movably disposed along an length defined by the guide post. The guidepost is partially surrounded by the via opening.