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    EPITAXIAL BASE BIPOLAR TRANSISTOR AND ITS MANUFACTURING METHOD
    3.
    发明专利
    EPITAXIAL BASE BIPOLAR TRANSISTOR AND ITS MANUFACTURING METHOD 审中-公开

    公开(公告)号：JP2002313798A

    公开(公告)日：2002-10-25

    申请号：JP2002052091

    申请日：2002-02-27

    Applicant: IBM

    Inventor： DUNN JAMES S ,  HARAME DAVID L ,  JOHNSON JEFFREY B ,  ROBB A JOHNSON ,  LANZEROTTI LOUIS D ,  ST ONGE STEPHEN A

    IPC: H01L21/331 ,  H01L29/10 ,  H01L29/732 ,  H01L29/737

    Abstract: PROBLEM TO BE SOLVED: To provide an epitaxial base bipolar transistor which has low base resistance and whose capacitance does not increase. SOLUTION: This epitaxial base bipolar transistor is provided with an epitaxial silicon layer on a single crystal semiconductor substrate 54, a raised emitter 64 on the surface of the semiconductor substrate, a raised extrinsic base 58e on the surface of the semiconductor substrate, an insulator 66 as a spacer between the raised emitter and raised extrinsic base, and a diffusion from the raised emitter and from the raised extrinsic base to provide an emitter diffusion and an extrinsic base diffusion in the semiconductor substrate. The emitter diffusion has an emitter diffusion junction depth, and the raised emitter extends to the surface of the semiconductor substrate and the raised extrinsic base extends to the surface of the semiconductor substrate. A difference of height between the surfaces of the emitter and base is less than 20% of the emitter diffusion junction depth.

    BIPOLAR TRANSISTOR HAVING RAISED EXTRINSIC BASE WITH SELECTABLE SELF-ALIGNMENT AND METHODS OF FORMING SAME
    4.
    发明申请
    BIPOLAR TRANSISTOR HAVING RAISED EXTRINSIC BASE WITH SELECTABLE SELF-ALIGNMENT AND METHODS OF FORMING SAME 审中-公开
    具有可选择的自对准的提升的超级基座的双极晶体管及其形成方法

    公开(公告)号：WO2005024900A3

    公开(公告)日：2005-06-09

    申请号：PCT/US2004021345

    申请日：2004-07-01

    Applicant: IBM ,  KHATER MARWAN H ,  DUNN JAMES S ,  HARAME DAVID L ,  JOSEPH ALVIN J ,  LIU QIZHI ,  PAGETTE FRANCOIS ,  ST ONGE STEPHEN A ,  STRICKER ANDREAS D

    Inventor： KHATER MARWAN H ,  DUNN JAMES S ,  HARAME DAVID L ,  JOSEPH ALVIN J ,  LIU QIZHI ,  PAGETTE FRANCOIS ,  ST ONGE STEPHEN A ,  STRICKER ANDREAS D

    IPC: H01L21/331 ,  H01L29/10 ,  H01L29/732 ,  H01L29/737 ,  H01L23/62

    CPC classification number: H01L29/66287 ,  H01L29/1004 ,  H01L29/66242 ,  H01L29/732 ,  H01L29/7378

    Abstract: A bipolar transistor with raised extrinsic base and selectable self-alignment between the extrinsic base and the emitter (106) is disclosed. The fabrication method may include the formation of a predefined thickness of a first extrinsic base layer (102) of polysilicon or silicon on an intrinsic base (108). A dielectric landing pad (128) is then formed by lithography on the first extrinsic base layer (102). Next, a second extrinsic base layer (104) of polysilicon or silicon is formed on top of the dielectric landing pad (128) to finalize the raised extrinsic base total thickness. An emitter (106) opening is formed using lithography and RIE, where the second extrinsic base layer (104) is etched stopping on the dielectric landing pad (128). The degree of self-alignment between the emitter (106) and the raised extrinsic base is achieved by selecting the first extrinsic base layer (102) thickness, the dielectric landing pad (128) width, and the spacer width.

    Abstract translation: 公开了一种具有凸起的非本征基极和在本征基极和发射极（106）之间的可选自对准的双极晶体管。 制造方法可以包括在内在基极（108）上形成多晶硅或硅的第一非本征基极层（102）的预定厚度。 然后通过光刻在第一非本征基极层（102）上形成电介质着色焊盘（128）。 接下来，在电介质着色焊盘（128）的顶部上形成多晶硅或硅的第二非本征基极层（104），以最终确定凸出的非本征基本总厚度。 使用光刻和RIE形成发射器（106）开口，其中第二外部基极层（104）被蚀刻停止在电介质着色焊盘（128）上。 通过选择第一非本征基极层（102）的厚度，电介质着陆焊盘（128）的宽度和间隔物宽度来实现发射极（106）和凸起的外在基极之间的自对准程度。

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