公开(公告)号：DE102008038175A1

公开(公告)日：2010-02-25

申请号：DE102008038175

申请日：2008-08-18

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MEYER THORSTEN

IPC: H01L23/50 ,  H01L21/60 ,  H01L23/32

Abstract: The arrangement (1) has a semiconductor chip (2), and a mold (3) covering the semiconductor chip, where the mold includes an array of recesses in a surface (11) of the mold. A set of flexible elements is arranged in the recesses, where the flexible elements connect a set of contact elements e.g. solder bump (12), including coated polymer balls with the mold. Another set of contact elements is rigidly connected with the semiconductor chip, where the former contact elements and the latter contact elements define a common plane for assembly of the arrangement at a carrier. An independent claim is also included for a method for manufacturing an electronic arrangement.

公开(公告)号：DE102004063991B4

公开(公告)日：2009-06-18

申请号：DE102004063991

申请日：2004-10-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HIRLER FRANZ ,  WAHL UWE ,  MEYER THORSTEN ,  RUEB MICHAEL ,  WILLMEROTH ARMIN ,  SCHMITT MARKUS ,  TOLKSDORF CAROLIN ,  SCHAEFFER CARSTEN

IPC: H01L21/336 ,  H01L29/78

公开(公告)号：DE102008048423A1

公开(公告)日：2009-05-20

申请号：DE102008048423

申请日：2008-09-23

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MENGEL MANFRED ,  BRUNNBAUER MARKUS ,  MEYER THORSTEN

IPC: H01L23/48 ,  H01L21/58 ,  H01L21/60

Abstract: An integrated circuit device includes a carrier defining a surface with a semiconductor chip including an integrated circuit attached to the carrier. An insulation layer is disposed over the carrier, extending above the surface of the carrier a first distance at a first location and a second distance at a second location. A transition area is defined between the first and second locations, wherein the transition area defines a non-right angle relative to the surface.

公开(公告)号：DE102008038815A1

公开(公告)日：2009-04-02

申请号：DE102008038815

申请日：2008-08-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MEYER THORSTEN ,  BRUNNBAUER MARKUS ,  BRADL STEPHAN

IPC: H01L23/50 ,  H01L21/60

Abstract: An integrated circuit includes a substrate including a contact pad, a redistribution line coupled to the contact pad, and a dielectric material layer between the substrate and the redistribution line. The integrated circuit includes a solder ball coupled to the redistribution line and a parylene material layer sealing the dielectric material layer and the redistribution line.

公开(公告)号：DE102008028072A1

公开(公告)日：2009-01-22

申请号：DE102008028072

申请日：2008-06-12

Applicant: INFINEON TECHNOLOGIES AG

Inventor： POHL JENS ,  BRUNNBAUER MARKUS ,  ESCHER-POEPPEL IRMGARD ,  MEYER THORSTEN

IPC: H01L23/18

Abstract: A description is given of a device comprising a first semiconductor chip, a molding compound layer embedding the first semiconductor chip, a first electrically conductive layer applied to the molding compound layer, a through hole arranged in the molding compound layer, and a solder material filling the through hole.

公开(公告)号：DE102004058395A1

公开(公告)日：2006-06-08

申请号：DE102004058395

申请日：2004-12-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MEYER THORSTEN ,  HEDLER HARRY

IPC: H01L21/60 ,  H01L21/48 ,  H01L23/498 ,  H01L23/50 ,  H01L25/065

Abstract: The method involves arranging a semiconductor chip with its rear side (101) on a horizontal surface (200) and between contacting surfaces (6). A front side of the chip exhibits a chip contacting region (2). A filling material on the surface (200) is applied laterally into the semiconductor chip adjacent region. A conductive layer is applied and structured on the front side. The material connects the region (2) with the surfaces (6). An independent claim is also included for a semiconductor device with a stacked semiconductor chip.

公开(公告)号：DE102004052643A1

公开(公告)日：2006-05-04

申请号：DE102004052643

申请日：2004-10-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HIRLER FRANZ ,  WAHL UWE ,  MEYER THORSTEN ,  RUEB MICHAEL ,  WILLMEROTH ARMIN ,  SCHMITT MARKUS ,  TOLKSDORF CAROLIN ,  SCHAEFFER CARSTEN

IPC: H01L29/78 ,  H01L21/336

Abstract: Lateral trench transistor (200) has a body region (4) inside which a semiconductor region (10) is provided adjoining to it. The semiconductor region is electrically connected with the source contact (12) and its type of endowment corresponds to the type of endowment of body region. An independent claim is also included for a method for manufacturing of endowed semiconductor region.

公开(公告)号：DE102004041888A1

公开(公告)日：2006-03-02

申请号：DE102004041888

申请日：2004-08-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HEDLER HARRY ,  MEYER THORSTEN ,  IRSIGLER ROLAND

IPC: H01L21/60 ,  H01L23/50

Abstract: The present invention provides an apparatus having stacked semiconductor components. Two semiconductor components (21, 26) are arranged such that their contact regions (28, 22) are opposite one another. A contact-connection device (29) forms a short electrical connection between the two contact regions (28, 22). The contact regions (28, 22) are connected to external contact regions (36) of the apparatus via a rewiring (23).

公开(公告)号：DE102004047752B3

公开(公告)日：2006-01-26

申请号：DE102004047752

申请日：2004-09-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MEYER THORSTEN ,  KRISCHKE NORBERT ,  ZUNDEL MARKUS

IPC: G01K7/01 ,  H01L23/62 ,  H01L27/08

Abstract: A semiconductor device is disclosed. In one embodiment the semiconductor device includes a semiconductor body of which is integrated a temperature sensor for measuring the temperature prevailing in the semiconductor body. The temperature sensor has a MOS transistor and a bipolar transistor. The MOS transistor is integrated into the semiconductor body nd configured such that the substhreshold current intensity of the MOS transistor is proportional to the temperature to be measured. The subthreshold current of the MOS transistor is amplified by the bipolar transistor.

公开(公告)号：DE10135308B4

公开(公告)日：2006-01-12

申请号：DE10135308

申请日：2001-07-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HEDLER HARRY ,  MEYER THORSTEN

IPC: H01L21/60 ,  H01L23/485 ,  H01L23/50

Abstract: Electronic component, in particular a chip, which can be electrically bonded by means of a plurality of contacts provided on the component to mating contacts provided on a carrier, each contact having a raised elastic base of a conductive material which is connected to a lead on the component side, and to which there is applied on the upper side a metallic cap-like contact covering, only partially covering the base.