公开(公告)号：DE102006043400A1

公开(公告)日：2008-03-27

申请号：DE102006043400

申请日：2006-09-15

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： ALBRECHT TONY ,  BRUEDERL GEORG ,  HAERLE VOLKER ,  HOEPPEL LUTZ ,  STRASBURG MARTIN

IPC: H01L33/00 ,  H01L33/24 ,  H01S5/30

Abstract: The optoelectronic semiconductor chip has a growth substrate (1) with a structured growth surface, which has multiple projections (4) and hollows (3). An active series of deposits (5) are applied on the growth surface. The surface area of the active series of deposits is larger than the area of the lateral cross section (Q) of the growth substrate. The growth substrate consists of gallium nitride, silicon carbide, sapphire, indium gallium nitride, indium aluminum gallium nitride nad zinc oxide.

公开(公告)号：DE112005002919A5

公开(公告)日：2007-08-30

申请号：DE112005002919

申请日：2005-09-20

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： ALBRECHT TONY ,  LUTGEN STEPHAN ,  REILI WOLFGANG ,  SCHWARZ THOMAS ,  STEEGMUELLER ULRICH

IPC: H01S5/026 ,  H01S5/02 ,  H01S5/04 ,  H01S5/183

Abstract: A surface emitting semiconductor laser device comprising at least one surface emitting semiconductor laser (21) having a vertical emitter (1) and at least one pump radiation source (2), which are monolithically integrated alongside one another onto a common substrate (13), is described. The semiconductor laser device additionally has a heat-conducting element (18), which is in thermal contact with the semiconductor laser (21) and has a mounting area provided for mounting on a carrier (27). Methods for producing such a surface emitting semiconductor laser device are furthermore described.

公开(公告)号：DE10341086B4

公开(公告)日：2007-06-06

申请号：DE10341086

申请日：2003-09-05

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： PHILIPPENS MARC ,  PLAINE GLENN-YVES ,  ALBRECHT TONY ,  BRICK PETER

IPC: H01L31/0232 ,  H01L31/101

公开(公告)号：DE102005053274A1

公开(公告)日：2007-04-12

申请号：DE102005053274

申请日：2005-11-08

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： REILL WOLFGANG ,  ALBRECHT TONY ,  LUTGEN STEPHAN

IPC: H01L33/00 ,  H01L33/64 ,  H01S5/022 ,  H01S5/024 ,  H01S5/18

Abstract: The method involves building up the semiconductor layers (2) through an epitaxial growth substrate (1), applying a metal plating (3) to the layers, depositing a metal layer (4) which can contain gold, silver or copper, galvanically onto the metal plating and then structuring and separating out the layers into individual semiconductor chips (6). Independent claim describes semiconductor component having at least one semiconductor chip made in layers and coated with a metal plating.

公开(公告)号：DE50108675D1

公开(公告)日：2006-04-06

申请号：DE50108675

申请日：2001-05-16

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： ALBRECHT TONY ,  LINDER NORBERT ,  LUFT JOHANN

IPC: H01S5/183 ,  H01S5/026 ,  H01S5/04 ,  H01S5/10 ,  H01S5/14 ,  H01S5/34 ,  H01S5/40

公开(公告)号：DE102004004781A1

公开(公告)日：2005-08-18

申请号：DE102004004781

申请日：2004-01-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： ALBRECHT TONY ,  PHILIPPENS MARC

IPC: H01L27/15 ,  H01L33/08 ,  H01S3/10 ,  H01S5/026 ,  H01S5/18 ,  H01S5/183 ,  H01S5/20 ,  H01S5/40 ,  H01L33/00

Abstract: The device has a semiconductor body (3) with a first active zone (1) and a second active zone (2) arranged after the first in the vertical direction. The first active zone is provided for generating radiation (11) of a first wavelength and the second active zone for generating a second wavelength (22). The radiation of the first wavelength is coherent and that of the second is incoherent.

公开(公告)号：DE10345555A1

公开(公告)日：2005-05-04

申请号：DE10345555

申请日：2003-09-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： ALBRECHT TONY ,  PLAINE GLENN-YVES ,  BRICK PETER ,  PHILIPPENS MARC

IPC: H01L31/12 ,  H01L27/15 ,  H01L31/173 ,  H01L31/0232 ,  H01S5/026 ,  H01L31/109

Abstract: Radiation emitting and receiving semiconductor component comprises a radiation-producing region (5) having a composition which is different from a radiation absorbing region (9). An independent claim is also included for a process for the production of an integrated semiconductor component.

公开(公告)号：DE10341085A1

公开(公告)日：2005-03-03

申请号：DE10341085

申请日：2003-09-05

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： ALBRECHT TONY

IPC: H01S5/026 ,  H01S5/04 ,  H01S5/14 ,  H01S5/183 ,  H01S5/20 ,  H01S5/34 ,  H01S5/40

公开(公告)号：DE10261676A1

公开(公告)日：2004-07-22

申请号：DE10261676

申请日：2002-12-31

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： STEIN WILHELM ,  ALBRECHT TONY ,  WIRTH RALPH

IPC: H01L33/14 ,  H01L33/42 ,  H01L33/00

Abstract: A light emitting diode chip comprises an epitaxial semiconductor sequence (SS) having a protective layer, an electromagnetic radiation emitting active zone and an electrical contact structure, which has a radiation permeable current increasing layer containing ZnO and an electrical junction layer, and in the transition from the junction layer to the protective layer in operation of the chip the whole or almost the whole current flows via the current increasing layer into the SS.

公开(公告)号：DE10223540A1

公开(公告)日：2003-12-18

申请号：DE10223540

申请日：2002-05-27

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： ALBRECHT TONY ,  LINDER NORBERT ,  SCHMID WOLFGANG

IPC: H01S5/026 ,  H01S5/04 ,  H01S5/10 ,  H01S5/183 ,  H01S5/40 ,  H01S3/0941 ,  H01S5/34

Abstract: The laser beam (10) shines vertically downward and passes through the semitransparent second mirror (20). The first mirror (9) is mounted at the top of the laser (4) and has several parallel semitransparent surfaces, forming a Bragg mirror. The optical pumping laser (11) surrounds the main laser and is integrated with it. The top layer (17) is a parallel- doped contact layer. It covers the Bragg mirror and a mantle layer (16) surrounding it. The mantle layer is followed by a waveguide layer (15) and an active layer (14) and a further waveguide layer (13). A bottom mantle layer (12) rests on a buffer layer on top of a buffer layer (5) and a substrate (1). The substrate has flat top and bottom layers (2,3).