公开(公告)号：DE10261362A1

公开(公告)日：2004-07-15

申请号：DE10261362

申请日：2002-12-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： WALTER ALEXANDER ,  HAERLE VOLKER ,  PETER MATTHIAS ,  BADER STEFAN

IPC: C23C16/458 ,  C30B25/12 ,  C30B25/08 ,  C30B33/02 ,  C23C14/50

Abstract: The holder (1) has a temperature-equalization structure promoting a defined temperature profile over the entire surface of the substrate (2). The substrate lies on or near the holder during processing, which involves heating or cooling.

公开(公告)号：DE10208766A1

公开(公告)日：2003-09-18

申请号：DE10208766

申请日：2002-02-28

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： HAERLE VOLKER ,  BOLAY HELMUT

IPC: H01L21/205 ,  H01L33/00

Abstract: The buffer layer (2) is deposited onto the substrate (1) at a first temperature. A layer (3) forming part of the connecting semiconductor layer structure (4) is added in the direction of growth, onto the buffer layer. Layer (3) is grown at a lower temperature. An Independent claim is included for the corresponding light-emitting semiconductor chip.

公开(公告)号：DE10203795A1

公开(公告)日：2003-08-21

申请号：DE10203795

申请日：2002-01-31

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： PLOESL ANDREAS ,  HAERLE VOLKER ,  KAISER STEPHAN ,  HAHN BERTHOLD ,  FEHRER MICHAEL ,  OTTE FRANK

IPC: C30B33/00 ,  H01L21/20 ,  H01L21/762 ,  H01L33/00 ,  H01L21/58 ,  B23K26/38

Abstract: Production of a semiconductor component comprises separating a semiconductor layer (2) from a substrate (1) by irradiating with a laser beam having a plateau-shaped spatial beam profile. Preferred Features: The laser beam is produced an excimer laser containing a rare gas-halogen compound, especially XeF, XeBr, KrCl or KrF as laser-active medium. The laser beam has a rectangular or trapezoidal spatial beam profile. The laser beam has a wavelength of 200-400 nm.

公开(公告)号：DE10203393A1

公开(公告)日：2003-08-14

申请号：DE10203393

申请日：2002-01-29

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： FEHRER MICHAEL ,  HAHN BERTHOLD ,  BAUR JOHANNES ,  BRUEDERL GEORG ,  HAERLE VOLKER ,  LUGAUER HANS-JUERGEN ,  STATH NORBERT ,  BADER STEFAN

IPC: H01L21/20 ,  H01L29/15 ,  H01L29/20 ,  H01L33/00 ,  H01S5/323 ,  H01S5/343

Abstract: Buffer layer (3) comprises a multiple quantum well structure of semiconductor materials with various band gaps.

公开(公告)号：DE10147791A1

公开(公告)日：2003-04-10

申请号：DE10147791

申请日：2001-09-27

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： HAERLE VOLKER ,  LELL ALFRED ,  WEIMAR ANDREAS

IPC: H01S5/343 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S5/30 ,  H01L33/00

Abstract: The invention relates to a method for the production of a nitride compound semiconductor based semiconductor element. In a first step of the inventive method, a semiconductor body (1) containing at least one nitride compound semiconductor is provided. A metal layer is applied to the surface (6) of the semiconductor body (1) in a second step. In a third step, the semiconductor body (1) is subsequently structured, whereby part of the metal layer (7) and parts of the semiconductor body (1) located thereunder are removed.

公开(公告)号：DE10060439A1

公开(公告)日：2002-06-13

申请号：DE10060439

申请日：2000-12-05

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： ARNOLD CLAUDIA ,  BRUEDERL GEORG ,  HAERLE VOLKER ,  LELL ALFRED ,  WEIMAR ANDREAS

IPC: H01L21/285 ,  H01L29/20 ,  H01L29/45 ,  H01L33/32 ,  H01L33/40 ,  H01L33/00

Abstract: Contact metallization contains copper distributed in a partial volume. An Independent claim is also included for the production of a contact metallization comprising applying a contact metallization containing copper on a p-conducting region (2) of a GaN-based semiconductor structure (1); and curing the metallization at elevated temperature so that copper is distributed in partial volume regions of the contact metallization. Preferred Features: Copper is uniformly distributed in the whole of the metallization. The metallization contains a layer of nickel, gold, platinum, palladium, tantalum, titanium, chromium, tungsten, indium, magnesium or silicon. An adhesion layer (4) containing titanium or chromium is formed on the side of the metallization facing the semiconductor.

公开(公告)号：DE10025562C1

公开(公告)日：2002-04-25

申请号：DE10025562

申请日：2000-05-24

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： LUGAUER HANS-JUERGEN ,  HAERLE VOLKER ,  HANDSCHUH ROBERT ,  LELL ALFRED ,  HAHN BERTHOLD ,  BADER STEFAN ,  SCHRUPP DAVID ,  SCHWERTBERGER RUTH ,  RAUSCHENBACH BERND ,  GERLACH JUERGEN

IPC: C23C14/00 ,  C23C14/06 ,  C30B23/02 ,  H01L21/20 ,  H01L21/203 ,  C23C14/24

Abstract: Production of a nitride layer on a substrate comprises vaporizing gallium atoms and aluminum and/or indium atoms on the substrate; and irradiating the surface of the substrate during vaporization with nitrogen atoms. At the start of the growing process, the flow of the gallium atoms is continuously increased from a first value to a larger second value. An Independent claim is also included for a quasi substrate (6) comprising a base substrate (2) with a gallium nitride layer (7). Preferred Features: The nitride layer is a gallium nitride layer and the substrate is made of sapphire. The gallium layer is grown along the c-axis of the substrate. The substrate temperature is between room temperature and 900 deg C. The ratio of gallium atoms to nitrogen ions is 0.1-30.

公开(公告)号：DE19943405A1

公开(公告)日：2001-05-10

申请号：DE19943405

申请日：1999-09-10

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： HAERLE VOLKER

IPC: H01L21/20 ,  H01L27/15 ,  H01L33/00 ,  H01L33/10

公开(公告)号：DE50214662D1

公开(公告)日：2010-10-28

申请号：DE50214662

申请日：2002-09-27

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： FEHRER MICHAEL ,  HAERLE VOLKER ,  KUEHN FRANK ,  ZEHNDER ULRICH

IPC: H01L33/20 ,  H01L33/44

公开(公告)号：DE50310838D1

公开(公告)日：2009-01-08

申请号：DE50310838

申请日：2003-09-23

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： BAUR JOHANNES ,  EISERT DOMINIK ,  FEHRER MICHAEL ,  HAHN BERTHOLD ,  HAERLE VOLKER

IPC: H01L33/20