公开(公告)号：EP3315935A3

公开(公告)日：2018-09-12

申请号：EP17198026.1

申请日：2017-10-24

Applicant: Rosemount Aerospace Inc.

Inventor： POTASEK, David P.

IPC: G01L9/00 ,  G01L19/14

CPC classification number: B81C3/001 ,  B81B3/0021 ,  B81B2201/0264 ,  B81B2207/012 ,  B81B2207/07 ,  B81C2201/013 ,  B81C2201/019 ,  B81C2203/0172 ,  G01L9/0042 ,  G01L19/148

Abstract: A MEMS device with electronics integration places integrated circuit components on a topping wafer (120A) of a sensing die to conserve space, minimize errors and reduce cost of the device as a whole. The topping wafer is bonded to a sensing wafer (118) and secured in a housing (138).

公开(公告)号：EP3213100A4

公开(公告)日：2018-06-06

申请号：EP15854648

申请日：2015-10-27

Applicant: GEN ELECTRIC

Inventor： KAPUSTA CHRISTOPHER ,  AIMI MARCO

IPC: G01R33/28 ,  B81C1/00 ,  G01R33/20

CPC classification number: C23C28/023 ,  B23K1/0016 ,  B23K35/0222 ,  B23K35/262 ,  B23K35/3013 ,  B23K2201/40 ,  B81C1/00269 ,  B81C2201/013 ,  B81C2203/0109 ,  B81C2203/019 ,  B81C2203/037 ,  C23C14/025 ,  C23C14/165 ,  C23C14/3414 ,  C23C14/58 ,  C23C28/021 ,  C23F1/00 ,  C23F4/00 ,  C25D3/50 ,  C25D7/123

Abstract: A non-magnetic lid for sealing a hermetic package. The lid includes a molybdenum substrate having a sputtered adhesion layer and a copper seed layer. The lid also includes a plated palladium solder base layer, and has a gold/tin solder preform attached to a sealing surface of the lid.

公开(公告)号：EP3317223A1

公开(公告)日：2018-05-09

申请号：EP16738943.6

申请日：2016-06-28

Applicant: KIONIX, INC.

Inventor： ADAMS, Scott G. ,  BLACKMER, Charles W.

IPC: B81C1/00

CPC classification number: B81B7/007 ,  B81B2207/096 ,  B81C1/00301 ,  B81C2201/013 ,  H01L21/30604 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5329

Abstract: Disclosed are systems, methods, and computer program products for electronic systems with through-substrate interconnects and mems device. An interconnect formed in a substrate having a first surface and a second surface, the interconnect includes: a bulk region; a via extending from the first surface to the second surface; an insulating structure extending through the first surface into the substrate and defining a closed loop around the via, wherein the insulating structure comprises a seam portion separated by at least one solid portion; and an insulating region extending from the insulating structure toward the second surface, the insulating region separating the via from the bulk region, wherein the insulating structure and insulating region collectively provide electrical isolation between the via and the bulk region.

公开(公告)号：EP3071932A1

公开(公告)日：2016-09-28

申请号：EP14790041.9

申请日：2014-10-21

Applicant: Safran Electronics & Defense

Inventor： JEANROY, Alain ,  ONFROY, Philippe

IPC: G01C19/574 ,  B81B3/00

CPC classification number: G01C19/574 ,  B81B3/0021 ,  B81B2201/0242 ,  B81B2201/0271 ,  B81B2203/0109 ,  B81C1/00547 ,  B81C2201/013 ,  G01C19/5733 ,  G01C19/5769

Abstract: The invention relates to an inertial sensor comprising a frame to which at least two seismic bodies are connected by resilient means such as to be movable in a suspension plane, and transducers to keep the seismic bodies vibrating and determine a relative movement of the seismic bodies relative to one another, characterized in that the seismic bodies have a single shape and a single mass, and in that the seismic bodies comprise interlocking parts such that the seismic bodies are nested inside one another while being movable in the suspension plane relative to the other of the seismic bodies, the seismic bodies having centres of gravity that coincide with one another. The invention also relates to a method for manufacturing such a sensor.

Abstract translation: 计划惯性传感器包括向其中至少两个地震体通过弹性装置连接的框架，以便可动在悬浮液中，换能器，以保持所述地震体的相对振动和确定性矿地震体的相对运动，以彼此 规划在DASS特点死地震体具有单一形状和单一质量，并在管芯DASS地震体包括检查互锁部件也地震体嵌套在彼此，同时相对于另一个地震体的悬浮液在可动 与具有重心也彼此一致地震机构。 一种用于制造传感器的搜索方法。

公开(公告)号：EP3049194A1

公开(公告)日：2016-08-03

申请号：EP14766694.5

申请日：2014-09-15

Applicant: Koninklijke Philips N.V.

Inventor： DIRKSEN, Peter ,  MULDER, Marcel ,  LEEUWESTEIN, Adriaan

IPC: B06B1/02

CPC classification number: B06B1/0292 ,  B81B3/0021 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00158 ,  B81C2201/0109 ,  B81C2201/013 ,  H02N1/006

Abstract: Disclosed is a method of manufacturing a capacitive micro-machined ultrasonic transducer (CMUT) device comprising a first electrode (112) on a substrate (110) and a second electrode (122) embedded in an electrically insulating membrane, the first electrode and the membrane being separated by a cavity (130) formed by the removal of a sacrificial material (116) in between the first electrode and the membrane, the method comprising forming a membrane portion (22) on the second electrode and a further membrane portion (24) extending from the membrane portion towards the substrate alongside the sacrificial material, wherein the respective thicknesses the membrane portion and the further membrane portion exceed the thickness of the sacrificial material prior to forming said cavity. A CMUT device manufactured in accordance with this method and an apparatus comprising such a CMUT device are also disclosed.

公开(公告)号：EP2972557A1

公开(公告)日：2016-01-20

申请号：EP14762298.9

申请日：2014-03-13

Applicant: Erlich, Raviv ,  Gerson, Yuval

Inventor： Erlich, Raviv ,  Gerson, Yuval

IPC: G02B26/08

CPC classification number: F16C11/12 ,  B81B3/0043 ,  B81B2201/0235 ,  B81B2201/034 ,  B81B2201/042 ,  B81B2203/0118 ,  B81B2203/0163 ,  B81C1/0015 ,  B81C1/00198 ,  B81C1/00523 ,  B81C2201/013 ,  E05D1/02 ,  E05D7/00 ,  E05D11/0081 ,  F16F1/48 ,  F16F2224/025 ,  F16F2226/00 ,  F16F2226/042 ,  G01C19/02 ,  G01P15/09 ,  G01P15/093 ,  G01P15/125 ,  G02B26/0833 ,  G02B26/105 ,  Y10T16/522 ,  Y10T16/525 ,  Y10T29/24 ,  Y10T29/25

Abstract: A mechanical device includes a long, narrow element made of a rigid, elastic material. A rigid frame is configured to anchor at least one end of the element, which is attached to the frame, and to define a gap running longitudinally along the element between the beam and the frame, so that the element is free to move within the gap. A solid filler material, different from the rigid, elastic material, fills at least a part of the gap between the element and the frame so as to permit a first mode of movement of the element within the gap while inhibiting a different, second mode of movement.

Abstract translation: 机械装置包括由刚性弹性材料制成的长而窄的元件。 刚性框架构造成锚定附接到框架的元件的至少一个端部，并且限定沿着梁和框架之间的元件纵向延伸的间隙，使得元件在间隙内自由移动 。 与刚性弹性材料不同的固体填充材料填充元件和框架之间的间隙的至少一部分，以便允许元件在间隙内的第一移动模式，同时抑制不同的第二模式 运动。

公开(公告)号：EP2281299A1

公开(公告)日：2011-02-09

申请号：EP09721942.2

申请日：2009-03-03

Applicant: Micron Technology, Inc.

Inventor： MILLWARD, Dan, B. ,  QUICK, Timothy

IPC: H01L21/033 ,  B81C1/00

CPC classification number: H01L21/76828 ,  B81C1/00031 ,  B81C2201/013 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y30/00 ,  C08F299/02 ,  C08F299/0492 ,  G03F7/0002 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31133 ,  H01L21/76802 ,  H01L21/76877

Abstract: Methods for fabricating sublithographic, nanoscale microstructures utilizing self-assembling block copolymer, and films and devices formed from these methods are provided.

公开(公告)号：EP2275384A1

公开(公告)日：2011-01-19

申请号：EP09165533.2

申请日：2009-07-15

Applicant: NXP B.V.

Inventor： Merz, Matthias ,  Ponomarev, Youri Victorovitch ,  Van Dal, Mark

IPC: B81C1/00 ,  G01P15/06

CPC classification number: H01L23/564 ,  B81B7/0006 ,  B81B2201/0235 ,  B81B2203/0315 ,  B81B2207/015 ,  B81C1/00246 ,  B81C99/005 ,  B81C2201/013 ,  B81C2203/0136 ,  B81C2203/0714 ,  G01P15/06 ,  G01P15/0802 ,  G01P2015/0862 ,  G01P2015/0877 ,  H01L21/768 ,  H01L23/5226 ,  H01L23/5256 ,  H01L23/528

Abstract: Disclosed is a semiconductor device comprising a stack of patterned metal layers (12) separated by dielectric layers (14), said stack comprising a first conductive support structure (20) and a second conductive support structure (21) and a cavity (42) in which an inertial mass element (22) comprising at least one metal portion is conductively coupled to the first support structure and the second support structure by respective conductive connection portions (24), at least one of said conductive connection portions being designed to break upon the inertial mass element being exposed to an acceleration force exceeding a threshold defined by the dimensions of the conductive connection portions. A method of manufacturing such a semiconductor device is also disclosed.

Abstract translation: 公开了一种半导体器件，包括由电介质层（14）分隔开的图案化金属层（12）的叠层，所述叠层包括第一导电支撑结构（20）和第二导电支撑结构（21） 其中包括至少一个金属部分的惯性质量元件（22）通过相应的导电连接部分（24）导电地耦合到第一支撑结构和第二支撑结构，所述导电连接部分中的至少一个设计成在 惯性质量元件暴露于超过由导电连接部分的尺寸限定的阈值的加速力。 还公开了制造这种半导体器件的方法。

公开(公告)号：WO2018013136A1

公开(公告)日：2018-01-18

申请号：PCT/US2016/042542

申请日：2016-07-15

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： CHEN, Chien-Hua ,  CUMBIE, Michael W. ,  MOUREY, Devin Alexander

IPC: G01N33/48 ,  B01D29/01 ,  B81B1/00

CPC classification number: B01L3/502753 ,  B01D29/01 ,  B01D29/012 ,  B01D29/03 ,  B01D29/56 ,  B01L3/502707 ,  B01L2200/0631 ,  B01L2300/0645 ,  B01L2300/0681 ,  B01L2300/0883 ,  B01L2300/0887 ,  B01L2400/0415 ,  B81B1/006 ,  B81B2201/10 ,  B81B2203/0338 ,  B81B2203/0353 ,  B81C1/00119 ,  B81C2201/0125 ,  B81C2201/013 ,  B81C2203/03

Abstract: A method may include etching a number of holes into a carrier wafer layer to form a plurality of filters in the carrier wafer layer, pattering a chamber layer over a first side of the carrier wafer layer to form chambers above each filter formed in the carrier wafer layer, forming a layer over the chamber layer, grinding a second side of the carrier wafer layer to expose the number of holes etched into the carrier wafer layer, and bonding a molded substrate to the carrier wafer layer opposite the chamber layer.

Abstract translation: 一种方法可以包括将多个孔蚀刻到载体晶圆层中以在载体晶圆层中形成多个滤波器，在载体晶圆层的第一侧上方形成腔体层以形成腔室 在形成于载体晶圆层中的每个滤波器上方，在腔体层上方形成层，研磨载体晶圆层的第二侧以暴露蚀刻到载体晶圆层中的多个孔，并且将模制衬底接合到载体晶圆层 与腔室层相对。

公开(公告)号：WO2017168055A1

公开(公告)日：2017-10-05

申请号：PCT/FI2017/050230

申请日：2017-03-31

Applicant: TEKNOLOGIAN TUTKIMUSKESKUS VTT OY

Inventor： JAAKKOLA, Antti ,  PENSALA, Tuomas ,  PRUNNILA, Mika ,  PEKKO, Panu ,  KIIHAMÄKI, Jyrki ,  OJA, Aarne

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0078 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/038 ,  B81B2203/0118 ,  B81B2203/0154 ,  B81B2203/0163 ,  B81C1/00293 ,  B81C2201/013

Abstract: The invention provides a micromechanical device comprising a support structure and a deflecting element connected to the support structure, wherein the deflecting element comprises at least one deformable member adapted to deform extensionally, flexurally or torsionally with respect to a deformation axis for allowing deflection of the deflecting element with respect to the support structure. Further, there are means for statically deflecting the deflecting element or detecting the magnitude of static deflection of the deflecting element. According to the invention, the deformable member is made of silicon doped with an n-type doping agent to a doping concentration of at least 1.1*10 20 cm -3 . The invention allows for manufacturing micromechanical devices whose mechanical operation is not affected by prevailing temperature conditions.

Abstract translation: 本发明提供了一种微机械装置，其包括支撑结构和连接到支撑结构的偏转元件，其中偏转元件包括至少一个可变形构件，该至少一个可变形构件适于相对于支撑结构弯曲地或扭转地 用于允许偏转元件相对于支撑结构偏转的变形轴线。 此外，存在用于使偏转元件静态偏转或检测偏转元件的静态偏转量的装置。 根据本发明，可变形构件由掺杂有n型掺杂剂的硅制成，掺杂浓度至少为1.1×10 20 cm -3。 本发明允许制造机械操作不受主要温度条件影响的微机械装置。