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公开(公告)号：KR1020150128056A
公开(公告)日：2015-11-18
申请号：KR1020140054793
申请日：2014-05-08
Applicant: 한국화학연구원
IPC: C01B31/04
CPC classification number: C01B32/182 , C01B32/184 , C01B2204/00
Abstract: 본발명은 3차원그래핀구조체및 이의제조방법, 이를이용한리튬이차전지용전극에관한것으로, 보다상세하게는그래핀소재와나노금속소재를복합화하여복합나노소재를제조하고, 추가적으로복합나노소재의표면에그래핀을형성시켜 3차원그래핀구조체를제조함으로써, 그래핀간의네트워킹을형성시켜전기전도성이향상된 3차원그래핀구조체및 이의제조방법, 이를이용한전극제조방법에관한것이다.
Abstract translation: 本发明涉及一种三维石墨烯结构体及其制造方法以及使用该锂二次电池的电极，更具体地，涉及三维石墨烯结构体及其制造方法和制造方法 通过使用它们的电极的方法，用于通过石墨烯材料和纳米金属材料的络合来制造复合纳米材料，并且另外通过在复合纳米材料的表面上形成石墨烯来另外制造三维结构，从而通过形成 石墨烯之间的网络。
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公开(公告)号：KR1020150105021A
公开(公告)日：2015-09-16
申请号：KR1020140027158
申请日：2014-03-07
Applicant: 한국화학연구원
IPC: C23C16/06 , C23C16/448
CPC classification number: C23C16/06 , C23C16/448
Abstract: 본 발명은 하기 화학식 1로 표시되는 4족 금속 전구체에 관한 것으로, 상기 4족 전이금속 전구체는 열적으로 안정하고 휘발성이 좋으므로 양질의 4족 전이금속 박막을 형성할 수 있다.
[화학식 1]
(상기 식에서, M은 Ti, Zr 또는 Hf이고, R
1 은 C1-C10의 선형 또는 분지형 알킬기, C1-C10의 선형 또는 분지형의 플루오로알킬기, 또는 C6-C12의 방향족 탄화수소이며, R
2 , R
3 은 각각 독립적으로 H이거나 C1-C10의 선형 또는 분지형 알킬기, 또는 C1-C10의 선형 또는 분지형의 플루오로알킬기고, R
4 및 R
5 는 각각 독립적으로 C1-C10의 선형 또는 분지형 알킬기이다.)Abstract translation: 本发明涉及由以下化学式1表示的IV族过渡金属前体。第IV族过渡金属前体是热稳定的并且具有优异的挥发性以形成具有良好质量的IV族过渡金属前体。 在化学式1中，M是Ti，Zr或Hf，R1是C1-C10的直链烷基或支链烷基或C1-C10的直链氟代烷基或支链氟代烷基或C6的芳族烃 -C12，R2和R3分别表示H或C1-C10的直链烷基或支链烷基或C1-C19的直链氟代烷基或支链氟代烷基，R4和R5分别表示直链烷基或 C1-C10的支链烷基。
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公开(公告)号：KR1020150084132A
公开(公告)日：2015-07-22
申请号：KR1020140003804
申请日：2014-01-13
Applicant: 한국화학연구원
CPC classification number: G02B5/282 , G02B1/10 , G02B5/208 , G02B5/26 , G02F1/133509
Abstract: 본발명은실리콘기판; 및상기실리콘기판상부에적층된 9 내지 120 nm 두께의금속산화물층;을포함하는파장증가에따라선형으로광투과율이증가되도록조절된필름을제공한다. 본발명에따른필름은파장증가에따라선형으로광투과율이증가되도록조절된필름으로써, 파장이짧은자외선파장대(약 400 nm 이하)에서부터파장이긴 가시광선파장대(약 400 내지 750 nm) 또는그보다긴 파장대(약 750 nm 이상) 영역까지선형으로광투과율이증가되도록조절하여적절히필요한파장대에서의광투과율을얻을수 있다. 또한, 본발명에따른필름은향후광통신및 광컴퓨터데이터송수신시스템, 광메모리저장, 3 차원홀로그램, 3 차원가상체험공간에서의광 조명특성제어에필요한필름형재료제조의기반기술로사용할수 있다.
Abstract translation: 本发明中提供的是调整为随着波长的增加而线性增加透光率的膜，包括：硅衬底; 以及层叠在硅基板的上部的厚度为9〜120nm的金属氧化物层。 根据本发明，通过调节膜的波长的增加使透光率线性增加，并且通过将透射率从短波长的紫外波长带线性增加来适当地获得所需波段的透光率 波长（约400nm或更短）到具有长波长（约400至750nm）的波长带或具有较长波长（约750nm或更长）的波长带。 另外，根据本发明，该膜可以用作未来光通信所需的薄膜型材料的基本技术，光学计算机数据发送和接收系统，光学存储器存储，三维全息图和光 在三维虚拟体验空间中照明物业控制。
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公开(公告)号：KR101306007B1
公开(公告)日：2013-09-12
申请号：KR1020120013515
申请日：2012-02-10
Applicant: 한국화학연구원
Abstract: 본 발명은 화학기상증착법을 이용하여 기판 상부에 Sb 증착막을 형성하는 단계; 및 Te 증착막을 형성하는 단계;를 교번하여 수행하는 Sb-Te계 열전박막을 증착 방법이며, Sb 증착 및 Te 증착 단계에서 플라즈마를 발생하는 Sb-Te계 열전박막의 제조방법에 관한 것이다.
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145.发明公开
公开(公告)号：KR1020130007509A
公开(公告)日：2013-01-18
申请号：KR1020120135577
申请日：2012-11-27
Applicant: 한국화학연구원
IPC: H01L31/04 , H01L31/0224 , H01B1/14
CPC classification number: Y02E10/50 , H01L31/04 , H01B1/14 , H01L31/0224
Abstract: PURPOSE: A contact formation of silicon solar cells using conductive ink with nano-sized glass frit is provided to minimize the loss of electrode material and to reduce production costs. CONSTITUTION: An emitter layer(202) is formed on the upper part of a substrate. A reflection barrier layer is formed on the emitter layer. A first conductive layer(204) is patterned in the reflection barrier layer. A second conductive layer(205) is formed in the upper surface of the first conductive layer. A conductive ink composite is used in the process for forming the second conductive layer.
Abstract translation: 目的：提供使用具有纳米尺寸玻璃料的导电油墨的硅太阳能电池的接触形成，以最小化电极材料的损失并降低生产成本。 构成：在衬底的上部形成发射极层（202）。 在发射极层上形成反射阻挡层。 在反射阻挡层中图案化第一导电层（204）。 第二导电层（205）形成在第一导电层的上表面中。 在形成第二导电层的工艺中使用导电油墨复合材料。
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Patent Agency Ranking
公开(公告)号：KR1020120127070A
公开(公告)日：2012-11-21
申请号：KR1020110045303
申请日：2011-05-13
Applicant: 한국화학연구원
CPC classification number: C01B32/194 , C01B2204/22 , C23C16/26 , H01B1/04 , H01L21/2026
Abstract: PURPOSE: Graphene and a manufacturing method of the same, a semiconductor device using the same, and a manufacturing method of the semiconductor are provided to control the electric characteristic of the graphene by generating the structural change of the graphene. CONSTITUTION: A manufacturing method of graphene controls the electric characteristic of graphene(104) by generating the structural change of the graphene. The structural change of the graphene is generated by doping nitrogen into the graphene based on nitrogen plasma treatment. The structural change of the graphene controls the electric characteristic of the graphene based on conductivity. The conductivity is controlled by the power of nitrogen plasma, the flux of nitrogen, the generating pressure of the nitrogen plasma, and the contact time of the nitrogen plasma and the graphene.
Abstract translation: 目的：提供石墨烯及其制造方法，使用该方法的半导体装置和半导体的制造方法，以通过产生石墨烯的结构变化来控制石墨烯的电特性。 构成：石墨烯的制造方法通过产生石墨烯的结构变化来控制石墨烯（104）的电特性。 石墨烯的结构变化是通过基于氮等离子体处理将氮掺杂到石墨烯中而产生的。 石墨烯的结构变化基于导电性控制石墨烯的电特性。 电导率由氮等离子体的功率，氮通量，氮等离子体的产生压力以及氮等离子体和石墨烯的接触时间来控制。
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公开(公告)号：KR1020120127069A
公开(公告)日：2012-11-21
申请号：KR1020110045302
申请日：2011-05-13
Applicant: 한국화학연구원
IPC: H01L21/027
CPC classification number: B32B43/006 , B32B2313/04 , B81C1/00492 , B81C99/0025 , C23C16/26 , C23C16/56 , H01L21/304 , Y10T156/195 , H01L21/0274 , G03F7/42
Abstract: PURPOSE: A method and apparatus for forming a graphene pattern using a stripping method are provided to easily form the graphene pattern having a uniform line width on a substrate by selectively stripping a part of a graphene layer formed on the substrate using a polymer stamp. CONSTITUTION: A graphene layer(104a) is formed on a substrate(102). A graphene stripping layer(108) is formed on a pattern surface of a polymer stamp(106) having a raised pattern. The pattern surface of the polymer stamp is attached with a target location of the graphene layer. The graphene layer attached to the raised pattern of the polymer stamp is selectively stripped from the substrate. The graphene pattern layer is formed on the substrate.
Abstract translation: 目的：提供一种使用剥离方法形成石墨烯图案的方法和装置，通过使用聚合物印模选择性地剥离在基板上形成的石墨烯层的一部分，以容易地在基板上形成具有均匀线宽的石墨烯图案。 构成：石墨烯层（104a）形成在基板（102）上。 在具有凸起图案的聚合物印模（106）的图案表面上形成石墨烯剥离层（108）。 聚合物印模的图案表面附着有石墨烯层的目标位置。 附着在聚合物印模的凸起图案上的石墨烯层从衬底中选择性剥离。 石墨烯图案层形成在基板上。
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公开(公告)号：KR101187700B1
公开(公告)日：2012-10-05
申请号：KR1020100014241
申请日：2010-02-17
Applicant: 한국화학연구원
Abstract: 본 발명은 변형된 글리신을 사용한 신규의 갈륨 화합물 및 그 제조방법에 관한 것으로, 구체적으로는 하기 화학식 1로 표시되는 갈륨 디알킬글리신 화합물에 관한 것으로 수분에 민감하지 않고 보관이 용이하며 열적 안정성이 있는 신규의 갈륨 디알킬글리신 화합물 및 그 제조 방법에 관한 것이다.
[화학식 1]
[상기 화학식 1에서, R
1 및 R
2 는 서로 독립적으로 선형 또는 분지형의 C1-C5의 알킬기이다.]-
公开(公告)号：KR1020120102985A
公开(公告)日：2012-09-19
申请号：KR1020110020943
申请日：2011-03-09
Applicant: 한국화학연구원
CPC classification number: C07F7/2232 , C23C16/18 , C23C16/407 , C23C16/45525
Abstract: PURPOSE: A novel tin compound with fluoro-ligand is provided to ensure high vapor pressure and to be used as a material for thin film deposition. CONSTITUTION: A tin alkoxide compound is denoted by chemical formula 1(Sn[O-A-OR^1]_2) or formula 2(Sn[O-CR^2R^3(CH_2)_m-OR^1]_2). The tin alkoxide compound is Sn(OCMe_2CH_2OCH_2CF_3)_2, or Sn(OCMeEtCH_2OCH_2CF_3)_2. A method for preparing the tin alkoxide compound comprises a step of reacting a tin halide compound of chemical formula 3(SnX_2) with an alkali metal salt of alcohol of chemical formula 4(M[O-A-OR^1]). A thin film containing tin compounds is prepared by MOCVD(modified chemical vapor deposition) or ALD(atomic layer deposition) using the tin alkoxide compounds as a precursor.
Abstract translation: 目的：提供具有氟配体的新型锡化合物以确保高蒸气压，并用作薄膜沉积材料。 组成：锡化合物化合物由化学式1（Sn [O-A-OR 1] 2）或式2（Sn [O-CR 2 R 2 3（CH 2）m -OR 1] 2）表示。 锡醇盐化合物是Sn（OCMe 2 CH 2 OCH 2 CF 3）2或Sn（OCMeEtCH 2 OCH 2 CF 3）2。 制备锡醇盐化合物的方法包括使化学式3（SnX_2）的卤化锡化合物与化学式4的醇的碱金属盐（M [O-A-OR 1]）反应的步骤。 使用锡醇盐化合物作为前体，通过MOCVD（改性化学气相沉积）或ALD（原子层沉积）制备含有锡化合物的薄膜。
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公开(公告)号：KR1020120079282A
公开(公告)日：2012-07-12
申请号：KR1020110000493
申请日：2011-01-04
Applicant: 한국화학연구원
CPC classification number: C07F9/94 , C23C16/18 , C23C16/40 , C23C16/45525
Abstract: PURPOSE: A novel bismuth amino alkoxide compound with an amino alkoxide ligand and a method for preparing the same are provided to deposit a thin film or various alloys. CONSTITUTION: A bismuth amino alkoxide compound is denoted by chemical formula 1(Bi[O-A-NR^1R^2]_3) or formula 2(Bi[O-CR^3R^4(CH_2)_m-NR^1R^2]_3). A method for preparing the compound of chemical formula 1 comprises a step of reacting bismuth halide compound of chemical formula 2(BiX) with alkali metal salt of alcohol of chemical formula 4(M[O-A-NR_1R_2]). A bismuth compound of chemical formula 6(Bi[NR^5_2]_3) is prepared by reacting a bismuth halide compound of chemical formula 3(BiX_3) with alkali metal compounds of chemical formula 5(M[NR^5_2]). A bismuth-containing thin film is prepared using the bismuth amino alkoxide compounds as a precursor.
Abstract translation: 目的：提供一种具有氨基醇盐配体的新型铋氨基烷氧基化合物及其制备方法，以沉积薄膜或各种合金。 构成：铋氨基烷氧基化合物由化学式1（Bi [OA-NR] 1R ^ 2] _3）或式2（Bi [O-CR 3 3R 4（CH 2）m-NR 1 R 1）2] _3）。 制备化学式1化合物的方法包括使化学式2（BiX）的卤化铋化合物与化学式4的醇的碱金属盐（M [O-A-NR_1R_2]）反应的步骤。 通过使化学式3（BiX_3）的卤化铋化合物与化学式5的碱金属化合物（M [NR 5 - 5]]反应，制备化学式6的铋化合物（Bi [NR 5/2] _3）。 使用铋氨基醇盐化合物作为前体制备含铋的薄膜。
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