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公开(公告)号：KR1020140131219A
公开(公告)日：2014-11-12
申请号：KR1020130050310
申请日：2013-05-03
Applicant: 한국화학연구원
IPC: C23C16/06 , C23C16/448
CPC classification number: C23C16/45553 , C07F15/0046 , C23C16/18 , C23C16/40
Abstract: The present invention relates to a ruthenium precursor represented by Chemical formula 1. The ruthenium precursor: has excellent thermal stability and increased volatility; does not use oxygen during a thin film deposition process; and thus can form a ruthenium thin film with high quality. In Chemical formula 1, R1 to R16 are independently hydrogen; otherwise, R1 to R16 are independently linear alkyl groups or branched alkyl groups.
Abstract translation: 本发明涉及由化学式1表示的钌前体。钌前体具有优异的热稳定性和增加的挥发性; 在薄膜沉积过程中不使用氧气; 因此能够形成高品质的钌薄膜。 在化学式1中，R 1至R 16独立地为氢; 否则，R 1至R 16独立地为直链烷基或支链烷基。
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公开(公告)号：KR1020140127680A
公开(公告)日：2014-11-04
申请号：KR1020130046344
申请日：2013-04-25
Applicant: 한국화학연구원
CPC classification number: C07F5/003 , C23C16/305
Abstract: 본발명은하기화학식 1로표시되는인듐전구체에관한것으로, 상기인듐전구체는황을포함하고있는전구체로서박막제조중에별도의황을첨가시키지않아도되는장점이있고열적안정성이향상되어양질의황을포함하는인듐박막을형성할수 있다.[화학식 1](상기식에서, R, R는각각독립적으로 C1-C10의선형또는분지형알킬기이고, R, R는각각독립적으로 C1-C10의선형또는분지형의알킬기또는 C1-C10의선형또는분지형의플루오르화알킬기이며, Y는 SeCN 또는 SCN이고, n은 1 내지 3 범위의정수에서선택된다.)
Abstract translation: 本发明涉及由化学式1表示的铟前体。铟前体含有硫，在薄膜制造期间不需要添加额外的硫作为前体，并且能够通过改进的热量形成含有高质量硫的铟薄膜 稳定性。 在化学式1中，R 1和R 2分别是C 1 -C 10的直链或支链烷基。 R_3和R_4是C1-C10的直链或支链烷基或C1-C10的直链或支链氟化烷基。 Y是SeCN或SCN。 n为1-3的整数。
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公开(公告)号：KR1020140127678A
公开(公告)日：2014-11-04
申请号：KR1020130046342
申请日：2013-04-25
Applicant: 한국화학연구원
CPC classification number: C07F11/005 , C23C16/305
Abstract: 본 발명은 하기 화학식 1로 표시되는 텅스텐 전구체에 관한 것으로, 상기 텅스텐 전구체는 황을 포함하고 있는 전구체로서 열적 안정성과 휘발성이 개선되고 박막 제조 중에 별도의 황을 첨가시키지 않아도 되는 장점을 가지기 때문에 이를 이용하여 양질의 황화텅스텐 박막을 형성할 수 있다.
[화학식 1]
(상기 식에서, R
1 은 C1-C4의 선형 또는 분지형의 알킬기이고, R
2 , R
3 는 각각 독립적으로 C1-C10의 선형 또는 분지형 알킬기이며, R
4 , R
5 는 각각 독립적으로 C1-C10의 선형 또는 분지형의 알킬기 또는 C1-C10의 선형 또는 분지형의 플루오로알킬기이고, n은 1 내지 3 범위의 정수에서 선택된다.)Abstract translation: 本发明涉及由化学式1表示的钨前体。钨前体是含硫的前体，改善热稳定性和挥发性，并且在薄膜制造期间不需要添加额外的硫，从而能够形成高质量的钨 硫化物薄膜。 （式中，R_1为C1-C4的直链或支链烷基，R_2和R_3分别为C1-C10的直链或支链烷基，R_4和R_5分别为C1- C10或C1-C10的直链或支链氟烷基，n为1-3的整数。
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公开(公告)号：KR1020140068720A
公开(公告)日：2014-06-09
申请号：KR1020120136560
申请日：2012-11-28
Applicant: 한국화학연구원
Abstract: The present invention relates to a germanium precursor represented by Chemical Formula 1. If the germanium precursor is a precursor which has improved thermal stability and includes chalcogen, the germanium precursor is advantageous because separated chalcogen does not have to be added during the production of a thin film so that a germanium thin film including good quality chalcogen can be produced. [Chemical Formula 1] (In Formula, A is O or S; E is S, Se, or Te; R1 and R2 are independently C1-C10 linear or branched alkyl groups; R3 and R4 are independently C1-C10 linear or branched alkyl or fluoroalkyl groups; and n is selected from the numbers between 1 and 3.).
Abstract translation: 本发明涉及由化学式1表示的锗前体。如果锗前体是具有改善的热稳定性并包括硫族元素的前体，锗前体是有利的，因为在制备薄的时候不必加入分离的硫族元素 使得可以生产包括优质硫属元素的锗薄膜。 [化学式1]（式中，A为O或S; E为S，Se或Te; R 1和R 2独立地为C 1 -C 10直链或支链烷基; R 3和R 4独立地为C 1 -C 10直链或支链烷基 或氟代烷基; n选自1和3之间的数字）。
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公开(公告)号：KR1020140068718A
公开(公告)日：2014-06-09
申请号：KR1020120136556
申请日：2012-11-28
Applicant: 한국화학연구원
CPC classification number: C07F7/30 , C23C16/305
Abstract: The present invention relates to a germanium precursor represented by Chemical Formula 1. The germanium precursor is a precursor including sulfur. The germanium precursor is advantageous because separated sulfur does not have to be added during the production of a thin film and has improved thermal stability and volatility so that a good quality germanium sulfide thin film can be produced. [Chemical Formula 1] (In Formula, R1 and R2 are independently C1-C10 linear or branched alkyl groups; R3 and R4 are independently C1-C10 linear or branched alkyl or fluoroalkyl groups; and n is selected from the numbers between 1 and 3.).
Abstract translation: 本发明涉及由化学式1表示的锗前体。锗前体是包含硫的前体。 锗前体是有利的，因为在制备薄膜期间不必加入分离的硫，并且具有改善的热稳定性和挥发性，从而可以生产出优质的硫化锗薄膜。 [化学式1]（式中，R 1和R 2独立地为C 1 -C 10直链或支链烷基; R 3和R 4独立地为C 1 -C 10直链或支链烷基或氟代烷基; n选自1至3 ）。
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Patent Agency Ranking
公开(公告)号：KR101359518B1
公开(公告)日：2014-02-07
申请号：KR1020120049237
申请日：2012-05-09
Applicant: 한국화학연구원
CPC classification number: C23C16/403
Abstract: 본 발명은 하기 화학식1로 표시되는 산화 마그네슘 전구체에 관한 것으로, 상기 산화 마그네슘 전구체는 열적으로 안정하고 휘발성이 좋으므로 양질의 산화 마그네슘을 포함한 박막을 형성할 수 있다.
[화학식 1]-
公开(公告)号：KR1020130123919A
公开(公告)日：2013-11-13
申请号：KR1020120047440
申请日：2012-05-04
Applicant: 한국화학연구원
CPC classification number: C07F3/00 , C23C16/409 , C23C16/45525
Abstract: The present invention relates to a strontium precursor which is represented by chemical formula 1, is thermally stable, and has good volatility, thereby easily forming a thin film including good quality strontium. In chemical formula 1, each of R1, R2, R3, R4, and R5 is independently H or a C1-C10 linear or branched alkyl group; each of R6 and R7 is independently a C1-C10 linear or branched alkyl group or a C1-C10 alkyl fluoride group.
Abstract translation: 本发明涉及由化学式1表示的锶前体，其热稳定性良好，挥发性良好，容易形成包含质量好的锶的薄膜。 在化学式1中，R 1，R 2，R 3，R 4和R 5各自独立地为H或C 1 -C 10直链或支链烷基; R6和R7各自独立地为C1-C10直链或支链烷基或C1-C10烷基氟基团。
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公开(公告)号：KR1020130123918A
公开(公告)日：2013-11-13
申请号：KR1020120047439
申请日：2012-05-04
Applicant: 한국화학연구원
CPC classification number: C07F3/003 , C23C16/409 , C23C16/45525
Abstract: The present invention relates to a strontium precursor which is represented by chemical formula 1, is thermally stable, and has good volatility, thereby easily forming a thin film including good quality strontium. In chemical formula 1, each of R1, R2, and R3 is independently H or a C1-C10 linear or branched alkyl group; each of R4, R5, R6, and R7 is independently a C1-C10 linear or branched alkyl group or a C1-C10 alkyl fluoride group; and each of m and n is 1-3.
Abstract translation: 本发明涉及由化学式1表示的锶前体，其热稳定性良好，挥发性良好，容易形成包含质量好的锶的薄膜。 在化学式1中，R 1，R 2和R 3各自独立地为H或C 1 -C 10直链或支链烷基; R4，R5，R6和R7各自独立地为C1-C10直链或支链烷基或C1-C10烷基氟基团; m和n分别为1-3。
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公开(公告)号：KR101311767B1
公开(公告)日：2013-09-26
申请号：KR1020110039621
申请日：2011-04-27
Applicant: 한국화학연구원
IPC: C07D213/22 , C07D471/04 , C07D401/14
CPC classification number: C07D213/22 , C07D401/14 , C07D471/04 , C07D487/04
Abstract: 본 발명은 터피리딘 또는 페난쓰롤린 기능기를 함유하는 디아민 화합물과 이의 제조방법을 제공하며, 본 발명에 따른 터피리딘 또는 페난쓰롤린 기능기를 함유하는 디아민 화합물은 디안하이드라이드, 디카복실산, 디에스터 등의 단량체와 반응하여 고분자를 형성할 수 있으며 기능기로 포함된 터피리딘 또는 페난쓰롤린 구조가 금속과 배위결합을 할 수 있어 이를 이용한 촉매, 유전 소재로서의 이용될 수 있으며 비공유전자쌍과 결합할 수 있는 기능기들이 다양한 형태로 부가될 수 있는 분야에 이용될 수 있는 장점이 있다.
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公开(公告)号：KR101306813B1
公开(公告)日：2013-09-10
申请号：KR1020120049235
申请日：2012-05-09
Applicant: 한국화학연구원
CPC classification number: C07F11/00 , C23C16/18 , C23C16/45553
Abstract: PURPOSE: A novel tungsten aminoamide azide compound is thermally stable and highly volatile, so that the novel tungsten aminoamide azide compound can be used in producing a thin film including quality tungsten. CONSTITUTION: A novel tungsten aminoamide azide compound is indicated as the chemical formula 1. A preparation method of the novel tungsten aminoamide azide compound indicated as the chemical formula 1 comprises a step of generating the reaction of a compound represented by the chemical formula 2 and a compound represented by the chemical formula 3. A method for growing a thin film containing tungsten by using the novel tungsten aminoamide azide compound is provided. The film growth process is performed by the chemical vapor deposition (CVD) method or the atomic layer deposition (ALD) method.
Abstract translation: 目的：新型钨氨基酰胺叠氮化合物具有热稳定性和高挥发性，因此新型钨氨基酰胺叠氮化合物可用于生产包含优质钨的薄膜。 构成：化学式1表示新的钨氨基酰胺叠氮化合物。作为化学式1表示的新型氨基酰胺叠氮化合物的制备方法，包括产生由化学式2表示的化合物与 化学式3表示的化合物。提供了使用新的氨基酰胺叠氮化合物生长含钨的薄膜的方法。 通过化学气相沉积（CVD）方法或原子层沉积（ALD）方法进行膜生长过程。
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