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公开(公告)号：KR1020040017698A
公开(公告)日：2004-02-27
申请号：KR1020020050124
申请日：2002-08-23
Applicant: 한국전자통신연구원
IPC: C25D7/12
Abstract: PURPOSE: An electroplating device is provided which further improves uniformity of plating thickness by changing a member for resting an object to be plated into an electrode ring and constructing the electrode ring in an inclined shape so that bubbles generated from the surface of wafer that is the object to be plated are easily removed. CONSTITUTION: The electroplating device comprises a plating pot(100) which forms an external appearance, and in which a plating solution is contained; a metal box(110) positioned inside the plating pot and formed of the same metal as plating metal; an inclined electrode ring(120) which is positioned oppositely to the metal box in the plating pot, and on which an object to be plated is rested; a metal box fixing frame(140) for fixing the metal box; an electrode ring fixing frame(130) for fixing the inclined electrode ring; and power supply terminals(150,160) connected to the metal box and inclined electrode ring, wherein a wafer holder(170) is attached to the inclined electrode ring so that a wafer i.e., the object to be plated is rested on the wafer holder, wherein a chemical resistant material such as Teflon and polyethylene is coated on the surface of the metal box fixing frame and electrode ring fixing frame, and wherein the power supply terminals are connected to the metal box and inclined electrode ring through an inner part of the metal box fixing frame and electrode ring fixing frame.
Abstract translation: 目的：提供一种电镀装置，其通过改变用于将要镀覆的物体放置在电极环中并将该电极环形成为倾斜形状的构件，从而进一步提高电镀厚度的均匀性，使得从晶片的表面产生的气泡为 被镀物体很容易去除。 构成：电镀装置包括形成外观的电镀罐（100），其中包含电镀液; 金属盒（110），其位于所述电镀槽内并由与所述电镀金属相同的金属形成; 倾斜电极环（120），与电镀锅中的金属盒相对地定位，待镀物体放置在该倾斜电极环上; 金属盒固定框架（140），用于固定金属盒; 用于固定所述倾斜电极环的电极环固定框架（130）; 以及连接到金属盒和倾斜电极环的电源端子（150,160），其中晶片保持器（170）附接到倾斜电极环，使得晶片（即被电镀物体）搁置在晶片保持器上，其中 在金属盒固定框架和电极环固定框架的表面上涂覆了特氟龙和聚乙烯等耐化学性材料，其中电源端子通过金属盒的内部连接到金属盒和倾斜电极环 固定框架和电极环固定架。
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公开(公告)号：KR1020030092748A
公开(公告)日：2003-12-06
申请号：KR1020020030540
申请日：2002-05-31
Applicant: 한국전자통신연구원
IPC: H01L29/737
Abstract: PURPOSE: An optical receiver is provided to improve reception sensitivity and an amplification characteristic by integrating a waveguide-type optical detector and a n+InP/p+InGaAs/n-InGaAs/n+InGaAs heterojunction bipolar transistor(HBT) on a half-insulated substrate wherein a pn junction is formed in the waveguide-type optical detector and the HBT amplifies an electrical signal converted by the optical detector. CONSTITUTION: A p+InGaAs layer(202), a p+InAlAs layer(203), an n+InAlAs layer(204) and an n+InGaAs sub-collector layer(205) are stacked in a predetermined region on the half-insulated InP substrate(201). An n-InGaAs layer and a p+InGaAs base layer are stacked in a predetermined region on the n+InGaAs sub-collector layer to transfer high speed current. An n+InP emitter layer and an n+InGaAs ohmic layer are stacked in a predetermined region on the p+InGaAs base layer. An emitter electrode(212) is formed on the n+InGaAs ohmic layer. A base electrode(213) is formed in a predetermined region on the p+InGaAs base layer. A collector electrode(214) is formed in a predetermined region on the n+InGaAs sub-collector layer.
Abstract translation: 目的：提供一种光接收器，用于通过将波导型光学检测器和n + InP / p + InGaAs / n-InGaAs / n + InGaAs异质结双极晶体管（HBT）集成在半导体器件上来提高接收灵敏度和放大特性， 绝缘基板，其中在波导型光学检测器中形成pn结，并且HBT放大由光学检测器转换的电信号。 构成：在半导体层的预定区域中层叠p + InGaAs层（202），p + InAlAs层（203），n + InAlAs层（204）和n + InGaAs副集电极层（205） 绝缘InP衬底（201）。 将n-InGaAs层和p + InGaAs基层层叠在n + InGaAs副集电极层上的预定区域中以传送高速电流。 在p + InGaAs基层上的预定区域中堆叠n + InP发射极层和n + InGaAs欧姆层。 在n + InGaAs欧姆层上形成发射电极（212）。 在p + InGaAs基层的规定区域形成有基极（213）。 集电极（214）形成在n + InGaAs副集电极层的规定区域中。
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公开(公告)号：KR100396919B1
公开(公告)日：2003-09-02
申请号：KR1020000082809
申请日：2000-12-27
Applicant: 한국전자통신연구원
IPC: H01L29/737
Abstract: PURPOSE: A method for fabricating a semiconductor integrated device is provided to integrate a digital integrated circuit(IC), an analog IC and a radio frequency(RF) IC, by embodying an AlGaAs/GaAs heterojunction bipolar transistor(HBT) semiconductor integrated device for ultrahigh frequency telecommunication. CONSTITUTION: A base region is formed in a predetermined region of a semiconductor substrate(31). The first insulation layer is formed in a defined base region and on the entire substrate. An emitter region is formed in the first insulation layer in the base region. An emitter electrode is formed in the emitter region. A base electrode is formed on the base region. A collector region is formed in the first insulation layer to fabricate a collector electrode. A predetermined region of the emitter electrode and collector electrode is exposed to form the first metal interconnection. The second insulation layer planarized by the first metal interconnection process is formed. A contact hole is formed in the second insulation layer and a metal interconnection is deposited. The metal interconnection is lifted off to form the second metal interconnection connected to the first metal interconnection.
Abstract translation: 本发明提供了一种用于制造半导体集成器件的方法，该器件通过包含AlGaAs / GaAs异质结双极晶体管（HBT）半导体集成器件来集成数字集成电路（IC），模拟IC和射频（RF）IC 超高频电信。 构成：在半导体衬底（31）的预定区域中形成基极区域。 第一绝缘层形成在限定的基底区域中并且形成在整个基底上。 发射极区域形成在基极区域中的第一绝缘层中。 发射极电极形成在发射极区域中。 基极形成在基极区域上。 集电极区域形成在第一绝缘层中以制造集电极。 发射极电极和集电极电极的预定区域被暴露以形成第一金属互连。 形成通过第一金属互连工艺平坦化的第二绝缘层。 在第二绝缘层中形成接触孔并沉积金属互连。 金属互连被提起以形成连接到第一金属互连的第二金属互连。
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公开(公告)号：KR100358354B1
公开(公告)日：2002-10-25
申请号：KR1019990062442
申请日：1999-12-27
Applicant: 한국전자통신연구원
IPC: H01S5/20
Abstract: 본발명은파장분할다중방식의광통신시스템에서필요로하는여러파장의빛을방출하는단일칩다파장반도체레이저어레이광원모듈및 그제작방법에관한것이다. 이러한파장분할다중화방식의광 통신시스템에서필요로하는여러파장의빛을방출하는다파장반도체레이저어레이는, 모듈기판에정렬되어파장별광 출력의세기가일정하고발산각이작은광을방출하는다수의반도체광 증폭기와, 상기반도체광 증폭기에서방출되는출력광에서원하는파장을선별하여궤환시키는다수의브래그광섬유를포함한다. 반도체광 증폭기의빛이도파되는활성층의횡방향폭은활성층의후방면에서부터출사면으로갈수록점점좁아지게형성되며, 활성층의후방면에는고반사막이형성되고, 활성층의출사면에는무반사막이형성된다.
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公开(公告)号：KR1020010058227A
公开(公告)日：2001-07-05
申请号：KR1019990062443
申请日：1999-12-27
Applicant: 한국전자통신연구원
IPC: H01S5/026
Abstract: PURPOSE: A multi-wavelength optical detector array and manufacturing method are provided to detect several wavelength at same wafer by making a single chip integration a multi-wavelength detector using selective MOCVD crystal growing method. CONSTITUTION: A n-InP substrate(22) and a n-InP buffer layer(23) and an absorption layer(25) to absorb a several wavelength and p-InP layer(26) is laminated in turn. The absorption layer(25) absorbs the several wavelength. A semi-insulated InP sequestering layer(24) isolates the p-InP layer(26) by wavelength absorbed. The n-InP buffer layer(23) is formed on the n-InP substrate(22). The absorption layer(25) to absorb several wavelength is grown on the n-InP buffer layer(23). The p-InP layer(26) is grown on the absorption layer(25). The semi-insulated InP sequestering layer(24) is grown after etching from the p-InP layer(26) to the n-InP buffer layer(23), and then the absorption layer(25) and the p-InP layer(26) is isolated by wavelength. The non-reflective layer(27) and electrode(21,28) is formed at the result of above stage.
Abstract translation: 目的：提供多波长光学检测器阵列和制造方法，通过使用选择性MOCVD晶体生长方法将单波长检测器单芯片集成在同一晶片上，检测多个波长。 构成：依次层叠n-InP衬底（22）和n-InP缓冲层（23）和吸收几个波长和p-InP层（26）的吸收层（25）。 吸收层（25）吸收几个波长。 半绝缘InP隔离层（24）通过吸收的波长隔离p-InP层（26）。 n-InP缓冲层（23）形成在n-InP衬底（22）上。 在n-InP缓冲层（23）上生长吸收多个波长的吸收层（25）。 在吸收层（25）上生长p-InP层（26）。 半绝缘InP隔离层（24）在从p-InP层（26）蚀刻到n-InP缓冲层（23），然后吸收层（25）和p-InP层（26 ）被波长隔离。 在上述阶段的结果形成非反射层（27）和电极（21,28）。
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Patent Agency Ranking
公开(公告)号：KR1020000020359A
公开(公告)日：2000-04-15
申请号：KR1019980038955
申请日：1998-09-21
IPC: H01S5/30
CPC classification number: H01S5/22 , H01S5/2068 , H01S5/2081 , H01S5/209
Abstract: PURPOSE: A method for fabricating semiconductor laser is provided to suppress decrease of beam converting efficiency by light absorption in an ion implantation region and to prevent beam steering phenomena by suppressing oscillation of a high dimensional mode. CONSTITUTION: A fabrication method comprises forming a lower clad layer, an active layer, a first upper clad layer, an etch stopper, a second upper clad layer and an ohmic contact layer. A photoresist pattern is formed on the ohmic contact layer, opening a channel region and covering a ridge region between the adjacent channel regions. A channel is formed by removing the ohmic contact layer and the second upper clad layer by wet etch and at the same time a narrower ridge than the photoresist pattern. An ion implantation region is formed by implanting ions in the first upper clad layer and the active region.
Abstract translation: 目的：提供一种制造半导体激光器的方法，以通过离子注入区域中的光吸收来抑制光束转换效率的降低，并且通过抑制高尺寸模式的振荡来防止光束转向现象。 构成：制造方法包括形成下包层，有源层，第一上覆层，蚀刻停止层，第二上覆层和欧姆接触层。 在欧姆接触层上形成光致抗蚀剂图案，打开通道区域并覆盖相邻通道区域之间的脊区域。 通过湿蚀刻去除欧姆接触层和第二上覆层，同时形成比光致抗蚀剂图案更窄的脊，形成通道。 通过在第一上部包层和有源区域中注入离子形成离子注入区域。
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公开(公告)号：KR1019980021301A
公开(公告)日：1998-06-25
申请号：KR1019960040113
申请日：1996-09-16
Applicant: 한국전자통신연구원
IPC: H01S3/10
Abstract: 본 발명은 광변조기 집적소자 제조 방법에 관한 것으로, 특히 분포 피드백 레이저와 전계 흡수형(electro-absorption) 광변조기 사이에 결함없이 버트커플링(Butt-coupling)하기 위해 광변조기 성장층 전에 InP 버퍼층을 성장시켜 그 위에 성장되는 변형 보상(strain compensated) InGaAsP/InGaAsP 다층 양자우물 구조층의 결정 결함을 제거할 수 있도록 한 광변조기 집적소자 제조 방법에 관한 것이다.
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公开(公告)号：KR101848244B1
公开(公告)日：2018-05-29
申请号：KR1020110133715
申请日：2011-12-13
Applicant: 한국전자통신연구원
IPC: H01L21/338 , H01L29/812
CPC classification number: H01L29/0649 , H01L21/28593 , H01L29/402 , H01L29/42316 , H01L29/66462 , H01L29/7786
Abstract: 본발명은계단형게이트전극을포함하는반도체소자및 그제조방법에관한것이다. 본발명의일 실시예에의한반도체소자의제조방법은, 다수의에피택셜층(epitaxial layer) 구조의반도체기판상에캡층(cap layer)을형성하고상기캡층의일부를식각하여활성영역을형성하는단계, 상기활성영역과상기캡층상에제 1 질화막, 제 2 질화막및 게이트형성을위한레지스트패턴을순차적으로형성하는단계, 상기레지스트패턴을통해상기제 2 질화막과상기제 1 질화막을순차적으로식각하고상기레지스트패턴을제거하여계단형의게이트절연막패턴을형성하는단계, 상기제 2 질화막상에게이트헤드패턴을형성하는단계, 상기게이트절연막패턴을통해상기반도체기판최상부의쇼트키층일부를식각하여언더컷(under-cut) 영역을형성하는단계, 상기게이트절연막패턴과상기게이트헤드패턴을통해내열성금속을증착하여계단형의게이트전극을형성하는단계및 상기게이트헤드패턴을제거하고절연막을증착하는단계를포함한다.
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公开(公告)号：KR101857214B1
公开(公告)日：2018-05-14
申请号：KR1020110139142
申请日：2011-12-21
Applicant: 한국전자통신연구원
IPC: H04B1/06
Abstract: 본발명은하나의기판에다채널안테나를포함하는빔스캔수신기를구현함으로써면적을줄이고제작비용을절감할수 있는다채널빔스캔수신기에관한것이다. 본발명의일 실시예에의한다채널빔스캔수신기는, 다채널안테나, 상기다채널안테나를통해수신한다수의신호중 하나를선택하는스위치, 상기스위치에서선택된신호를 1차증폭하는제 1 저잡음증폭기, 상기 1차증폭된신호를필터링(filtering)하는대역통과필터, 상기필터링된신호를 2차증폭하는제 2 저잡음증폭기및 상기 2차증폭된신호를전압으로변환하는검출기를포함한다.
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