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公开(公告)号：KR1020130133983A
公开(公告)日：2013-12-10
申请号：KR1020120057159
申请日：2012-05-30
Applicant: (재)한국나노기술원
IPC: H01L31/02 , H01L31/042 , H01L31/06 , H01L33/02
CPC classification number: Y02E10/50 , H01L31/02 , H01L31/042 , H01L31/06 , H01L33/02
Abstract: The present invention relates to an optical device manufacturing method when a buffer for any of the substrates is used, the lattice defects are formed on a region where it forms a tunnel diode device degradation caused by the lattice defects gets minimized, and more particularly, the optical substrate of the present invention is formed on the substrate, and it comprises the substrate and a lattice mismatch between the lattices and a misfit dislocation, a tunnel diode which is formed on the upper part of the thin file of the tunnel including the misfit dislocation of the lattice wherein a certain region of the lattice mismatch can operate only by the resistance, a tunnel diode layer formed on the upper part of the tunnel diode, the lower electrode formed on the lower part of the substrate, and a upper electrode formed on the device layer. [Reference numerals] (130) Misfit dislocation defect;(160) Device layer;(AA,BB) Electrode
Abstract translation: 本发明涉及当使用任何基板的缓冲器时的光学器件制造方法，在形成由晶格缺陷引起的隧道二极管器件劣化的区域中形成晶格缺陷最小化，更具体地说， 本发明的光学基板形成在基板上，并且其包括基板和晶格之间的晶格失配和失配位错，形成在隧道的薄文件的上部的隧道二极管，包括失配位错 晶格失配的一定区域仅能够通过电阻工作的晶格，形成在隧道二极管的上部的隧道二极管层，形成在衬底的下部的下电极和形成在衬底的上部的上电极 设备层。 （附图标记）（130）不匹配位错缺陷;（160）装置层;（AA，BB）电极
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公开(公告)号：KR1020110081385A
公开(公告)日：2011-07-14
申请号：KR1020100001525
申请日：2010-01-08
Applicant: (재)한국나노기술원
IPC: H01L31/06
Abstract: PURPOSE: A solar cell having a p-n tunnel diode is provided to lower serial resistance by using an N-type substrate having small defect in comparison with a P-type substrate and forming an upper electrode and a lower electrode with an n-ohmic contact electrode. CONSTITUTION: In a solar cell having a p-n tunnel diode, a p-n diode tunnel(220) is formed on an n-type substrate(210) by successively laminating an n-type semiconductor and a p-type semiconductor to form a p-n junction. A photovoltatic cell(230) is formed on the p-n diode tunnel by successively laminating an n-type semiconductor and a p-type semiconductor to convert an optical signal into an electrical signal. A bottom electrode(270) is formed on the N-type substrate. A top electrode(260) is formed on the photovoltatic cell.
Abstract translation: 目的：提供具有pn隧道二极管的太阳能电池，以通过使用与P型衬底相比具有小缺陷的N型衬底来降低串联电阻，并形成具有正欧姆接触电极的上电极和下电极 。 构成：在具有p-n隧道二极管的太阳能电池中，通过依次层叠n型半导体和p型半导体以形成p-n结，在n型衬底（210）上形成p-n二极管隧道（220）。 通过依次层叠n型半导体和p型半导体将光信号转换为电信号，在p-n二极管隧道上形成光伏电池（230）。 底部电极（270）形成在N型衬底上。 顶电极（260）形成在光伏电池上。
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公开(公告)号：KR100991986B1
公开(公告)日：2010-11-04
申请号：KR1020080103477
申请日：2008-10-22
Applicant: (재)한국나노기술원
IPC: H01L31/054
CPC classification number: Y02E10/50
Abstract: 태양전지가 개시된다. 제1 광전변환층은 입사된 태양광을 흡수하여 전기적 신호로 변환시킨다. 제2 광전변환층은 태양광의 진행 경로상 제1 광전변환층의 전단에 배치되며, 입사된 태양광을 흡수하여 전기적 신호로 변환시킨다. 집광장치는 태양광의 진행 경로상 제1 광전변환층과 제2 광전변환층 사이에 배치되며, 제2 광전변환층을 통과한 태양광이 제1 광전변환층을 향하도록 태양광을 집속한다. 본 발명에 따르면, 태양광의 진행 경로상 집광장치의 전단에 배치된 광전변환층에서는 짧은 파장을 갖는 태양광을 흡수하고, 후단에 배치된 광전변환층에서는 긴 파장을 갖는 태양광을 흡수하므로 발열이 완화된다. 또한, 산란 후 재입사하는 태양광을 흡수할 수 있으므로, 효율 향상을 도모할 수 있게 되고, 각각의 광전변환층에서 특정한 파장 대역만을 흡수하므로 색수차가 덜 발생하게 된다.
태양전지, 턴뎀, 집광장치, 색수차-
公开(公告)号：KR101698747B1
公开(公告)日：2017-01-24
申请号：KR1020150093610
申请日：2015-06-30
Applicant: (재)한국나노기술원
IPC: H01L21/203 , H01L21/314 , H01L21/324
Abstract: 본발명은실리콘기판상에화합물반도체에피층을성장하는방법에관한것으로서, 실리콘기판상에화합물반도체에피층을성장하는방법에있어서, 상기실리콘기판과화합물반도체에피층사이에탄성변형층의형성과열처리를반복적으로실시하여, 상기실리콘기판과화합물반도체에피층간의결함을억제하는것을특징으로하는실리콘기판상에결함이억제된화합물반도체에피층의성장방법을기술적요지로한다. 이에의해실리콘기판과화합물반도체에피층사이에탄성변형층의형성과열처리를반복적으로실시하여, 열처리온도를낮추고, 열처리시간을최소화하여공정시간을단축시키며, 실리콘기판과화합물반도체에피층간의계면에서나타나는결함들간의상호작용을유도함으로써, 결함을억제하여화합물반도체소자의성능을개선시키는이점이있다.
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公开(公告)号：KR1020160053178A
公开(公告)日：2016-05-13
申请号：KR1020140150213
申请日：2014-10-31
Applicant: (재)한국나노기술원 , 한국과학기술연구원 , 아주대학교산학협력단
IPC: H01L31/107 , H01L31/0304 , H01L31/0352
CPC classification number: H01L31/107 , H01L31/0304 , H01L31/03044 , H01L31/03046 , H01L31/03529
Abstract: 본발명은상기목적을달성하기위한것으로서, 분리된흡수층및 증폭층(separate absorption and multiplication)을갖는애벌랜치포토다이오드에있어서, 상기흡수층은전계가걸린흡수층과도핑된흡수층의조합으로변형형성되고, 상기도핑된흡수층은, 상기전계가걸린흡수층과비흡수층사이에형성되며, 상기전계가걸린흡수층의도핑농도보다상대적으로높은도핑농도를가지는도핑층으로이루어진것을특징으로하는변형된도핑흡수층을이용한애벌랜치포토다이오드를기술적요지로한다. 이에의해, 기존의흡수층에도핑층을추가하여변형된도핑흡수층을형성하여, 주파수특성을유지하면서효율은증가시키는이점이있다.
Abstract translation: 本发明涉及使用调制掺杂吸收层的雪崩光电二极管。 使用调制掺杂吸收层的雪崩光电二极管包括彼此分离的吸收层和倍增层。 吸收层被调制成电场吸收层和掺杂吸收层的组合。 掺杂吸收层形成在电场吸收层和非吸收层之间。 掺杂吸收层包括具有比电场施加的吸收层的掺杂浓度相对低的掺杂浓度的掺杂层。 因此，由于通过在现有的吸收层中添加掺杂层来形成调制的掺杂吸附层，所以可以在保持频率特性的同时提高效率。
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Patent Agency Ranking
公开(公告)号：KR101523984B1
公开(公告)日：2015-05-29
申请号：KR1020130169406
申请日：2013-12-31
Applicant: (재)한국나노기술원
IPC: H01L29/80 , H01L21/336
CPC classification number: H01L29/80 , H01L29/78 , H01L31/042
Abstract: 본발명의일 측면에의하면, 단결정기판; 상기기판상에 n-Type으로등축성장된도핑층;및상기도핑층위에 p-Type으로등축성장된소자층; 을포함하는것을특징으로하는공핍영역을구비한소자를제공한다. 이상에서살펴본본 발명에의하면, 기판위에소자를성장시키는초기에소자와상반된 Type의도펀트를첨가함으로써공핍영역을만들고소자내의전자또는정공이기판쪽으로이동하는것을막는효과가있다.
Abstract translation: 本发明提供一种具有耗尽区的装置，包括： 单晶基板; 在单晶衬底上以n型等长生长的掺杂层; 以及在掺杂层上用p型等长生长的元素层。 根据上述本发明，通过添加与能够在基板上生长元素的初始元素不一致的掺杂剂来制造耗尽区。 此外，防止元件内的电子或孔移动到基板。
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公开(公告)号：KR1020150047827A
公开(公告)日：2015-05-06
申请号：KR1020130127787
申请日：2013-10-25
Applicant: (재)한국나노기술원
CPC classification number: H04N5/33 , H04N5/232 , H04N5/2351 , H04N7/18
Abstract: 본발명은적외선컬러영상획득시스템및 방법에관한것으로서, 적외선컬러영상획득시스템은둘 이상의적외선파장을피사체에조사하는적외선조사장치; 및상기적외선조사장치에의해조사되고상기피사체에의해반사된상기둘 이상의적외선파장을감지하고, 감지된상기둘 이상의적외선파장을미리결정된기준에따라변환및 조합하여컬러영상으로변환하는컬러영상획득장치를포함하고, 상기컬러영상획득장치는반사된상기둘 이상의적외선파장을감지하는촬상소자를포함하는것을특징으로한다.
Abstract translation: 本发明涉及一种使用红外线获得彩色图像的系统和方法，包括：红外辐射装置，其向被摄体照射两个以上的红外波; 以及彩色图像获取装置，其感测由红外线照射装置照射并被对象反射的红外波，并且根据建立的标准通过转换和组合将感测的红外波转换成彩色图像。 彩色图像获取装置包括感测反射的红外波的成像装置。
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公开(公告)号：KR101429478B1
公开(公告)日：2014-08-14
申请号：KR1020130121559
申请日：2013-10-11
Applicant: (재)한국나노기술원
Abstract: The present invention relates to a method of manufacturing a solar cell in which a photoelectric transformation cell is formed by stacking a p+ semiconductor layer and an n+ semiconductor layer in order on a substrate, a lower electrode is formed under the substrate, and an upper electrode is formed on the photoelectric transformation cell and to a solar cell manufactured by the same. The technical point of the present invention is to form a doping compensation layer between the p+ semiconductor layer and the n+ semiconductor layer of the photoelectric transformation cell by raising the temperature in an As atmosphere, waiting for a certain period of time, converting the atmosphere into a P atmosphere, and then waiting for a certain period of time. Accordingly, a p+n(or I)n+ junction Ge solar cell can be manufactured by controlling the spreading of As and P in the photoelectric transformation cell and forming the doping compensation layer, which raises the breakdown voltage and lowers the tunnel current, thereby improving the efficiency and reliability of the solar cell.
Abstract translation: 本发明涉及一种太阳能电池的制造方法，其中通过在基板上依次层叠p +半导体层和n +半导体层而形成光电转换单元，在基板的下方形成下电极， 形成在光电转换单元和由其制造的太阳能电池。 本发明的技术要点是通过在As气氛中升高温度等待一段时间，将气氛转化为空气，形成在光电转换单元的p +半导体层和n +半导体层之间的掺杂补偿层 一个P气氛，然后等待一段时间。 因此，可以通过控制光电转换单元中的As和P的扩展并形成掺杂补偿层来制造p + n（或I）n +结Ge太阳能电池，从而提高击穿电压并降低隧道电流，从而 提高太阳能电池的效率和可靠性。
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公开(公告)号：KR1020140087549A
公开(公告)日：2014-07-09
申请号：KR1020120157977
申请日：2012-12-31
Applicant: (재)한국나노기술원 , 성균관대학교산학협력단
IPC: H01L21/26 , H01L21/324
CPC classification number: H01L21/3221 , H01L21/26513 , H01L21/28512 , H01L21/28518 , H01L21/324 , H01L29/45
Abstract: The present invention relates to a method of repairing a defect in a junction region of a semiconductor device. A p-Ge layer grows on a substrate, and an n+ Ge region is formed on the p-Ge layer through ion implantation or in-situ doping is performed on the upper portion of the p-Ge layer to form the n+ Ge region or an oxide layer is deposited on the p-Ge layer, pattered, etched, and in-situ doped to form the n+ Ge region. After an oxide layer for capping is formed, heat treatment is performed thereon at a temperature of 600-700°C for 1 to 3 hours to deposit an electrode. A leakage current is minimized to improve characteristics of a semiconductor device by relatively reducing deep junction through the heat treatment. The method has advantages in that high integration and refinement of the semiconductor device are realized.
Abstract translation: 本发明涉及修复半导体器件的接合区域中的缺陷的方法。 p-Ge层在衬底上生长，并且通过离子注入在p-Ge层上形成n + Ge区，或者在p-Ge层的上部进行原位掺杂以形成n + Ge区或 氧化物层沉积在p-Ge层上，图案化，蚀刻和原位掺杂以形成n + Ge区域。 在形成用于封盖的氧化物层之后，在600-700℃的温度下对其进行1至3小时的热处理以沉积电极。 通过相对减少通过热处理的深度接合，使漏电流最小化以改善半导体器件的特性。 该方法具有实现半导体器件的高集成度和精细化的优点。
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公开(公告)号：KR1020110128527A
公开(公告)日：2011-11-30
申请号：KR1020100048025
申请日：2010-05-24
Applicant: (재)한국나노기술원
IPC: H01L31/042 , H01L31/054
CPC classification number: Y02E10/50 , H01L31/042 , H01L31/054
Abstract: PURPOSE: A side exposure type solar battery is provided to increase efficiency by differently forming a part in which sunlight is income and a part in which an electrode is formed and to reduce series resistance of a solar battery. CONSTITUTION: A solar battery comprises a solar battery cell, a first electrode(220), and a second electrode(230). A light receiving part(211) in which external light is income is formed on a first side of the solar battery cell. The solar battery generates current from the light which is income through the light receiving part. The first electrode is formed on a second side of the solar cell. The second electrode is formed on a third side which is faced with the second side of the solar cell. The first side of the solar cell is different with the second side and the third side of the solar cell.
Abstract translation: 目的：提供侧曝式太阳能电池，以通过不同地形成阳光收入的部分和形成电极的部分来提高效率，并降低太阳能电池的串联电阻。 构成：太阳能电池包括太阳能电池单元，第一电极（220）和第二电极（230）。 在太阳能电池单元的第一侧上形成有外部光收入的受光部（211）。 太阳能电池从通过光接收部分收入的光产生电流。 第一电极形成在太阳能电池的第二侧上。 第二电极形成在面对太阳能电池的第二面的第三面上。 太阳能电池的第一面与太阳能电池的第二面和第三面不同。
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