公开(公告)号：WO2008080096A3

公开(公告)日：2008-11-06

申请号：PCT/US2007088643

申请日：2007-12-21

Applicant: ADVANCED TECH MATERIALS ,  COOPER EMANUEL I ,  SPARKS EILEEN ,  BOWERS WILLIAM R ,  BISCOTTO MARK A ,  YANDERS KEVIN P ,  KORZENSKI MICHAEL B ,  SONTHALIA PRERNA ,  THOMAS NICOLE E

Inventor： COOPER EMANUEL I ,  SPARKS EILEEN ,  BOWERS WILLIAM R ,  BISCOTTO MARK A ,  YANDERS KEVIN P ,  KORZENSKI MICHAEL B ,  SONTHALIA PRERNA ,  THOMAS NICOLE E

IPC: C09K13/08 ,  H01L21/311

CPC classification number: H01L21/31111 ,  B65D85/70 ,  C09K13/08 ,  G03F7/422 ,  H01L21/0206 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Compositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100 °C and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 Å min -1 .

Abstract translation: 用于相对于多晶硅，氧化硅材料和/或硅化物材料从其上具有相同的微电子器件选择性去除氮化硅材料的组合物。 除去组合物包括氟硅酸，硅酸和至少一种有机溶剂。 典型的工艺温度低于约100℃，氮化物与氧化物蚀刻的典型选择性为约200:1至约2000:1。 在典型的工艺条件下，镍基硅化物以及钛和钽氮化物在很大程度上不受影响，多晶硅蚀刻速率小于约1埃。

公开(公告)号：SG11201404930SA

公开(公告)日：2014-09-26

申请号：SG11201404930S

申请日：2013-02-15

Applicant: ADVANCED TECH MATERIALS

Inventor： LIU JUN ,  BARNES JEFFREY A ,  COOPER EMANUEL I ,  SUN LAISHENG ,  THOMAS ELIZABETH ,  CHANG JASON

IPC: C09K3/14 ,  H01L21/304

公开(公告)号：SG189292A1

公开(公告)日：2013-05-31

申请号：SG2013025697

申请日：2011-10-06

Applicant: ADVANCED TECH MATERIALS

Inventor： CHEN TIANNIU ,  THOMAS NICOLE E ,  LIPPY STEVEN ,  BARNES JEFFREY A ,  COOPER EMANUEL I ,  ZHANG PENG

Abstract: A removal composition and process for selectively removing a first metal gate material (e.g., titanium nitride) relative to a second metal gate material (e.g., tantalum nitride) from a microelectronic device having said material thereon. The removal composition can include fluoride or alternatively be substantially devoid of fluoride. The substrate preferably comprises a high-k/metal gate integration scheme.

公开(公告)号：SG11201601158VA

公开(公告)日：2016-03-30

申请号：SG11201601158V

申请日：2014-08-28

Applicant: ADVANCED TECH MATERIALS ,  ATMI TAIWAN CO LTD

Inventor： COOPER EMANUEL I ,  CHEN LI-MIN ,  LIPPY STEVEN ,  HSU CHIA-JUNG ,  TU SHENG-HUNG ,  WANG CHIEH JU

IPC: C09K13/00 ,  H01L21/306

Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant, one etchant, and one activator to enhance the etch rate of titanium nitride.

公开(公告)号：SG11201403556WA

公开(公告)日：2014-07-30

申请号：SG11201403556W

申请日：2012-12-27

Applicant: ADVANCED TECH MATERIALS

Inventor： BARNES JEFFREY A ,  COOPER EMANUEL I ,  CHEN LI-MIN ,  LIPPY STEVEN ,  RAJARAM REKHA ,  TU SHENG-HUNG

IPC: H01L21/311

Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten, and insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant and one etchant, may contain various corrosion inhibitors to ensure selectivity.

公开(公告)号：SG177915A1

公开(公告)日：2012-02-28

申请号：SG2011095296

申请日：2007-12-21

Applicant: ADVANCED TECH MATERIALS

Inventor： VISINTIN PAMELA M ,  JIANG PING ,  KORZENSKI MICHAEL B ,  MINSEK DAVID W ,  COOPER EMANUEL I ,  HSU MING-ANN ,  FLETCHER KRISTIN A

Abstract: LIQUID CLEANER FOR THE REMOVAL OF POST-ETCH RESIDUESCleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal intercormect material, and/or capping layers also present thereon. In addition, the composition may be useful for the removal of titanium nitride layers from a microelectronic device having same thereon.Figure 1

公开(公告)号：EP2510538A4

公开(公告)日：2014-03-26

申请号：EP10836729

申请日：2010-12-10

Applicant: ADVANCED TECH MATERIALS ,  IBM

Inventor： AFZALI-ARDAKANI ALI ,  BAUM THOMAS H ,  BOGGS KARL E ,  COOPER EMANUEL I ,  CYWAR DOUGLAS ,  KERN MATTHEW ,  KHOJASTEH MAHMOUD ,  TOTIR GEORGE GABRIEL ,  NUNES RONALD W

IPC: H01L21/311 ,  G03F7/42

CPC classification number: H01L21/31133 ,  G03F7/423

公开(公告)号：SG11201509933QA

公开(公告)日：2016-01-28

申请号：SG11201509933Q

申请日：2014-06-06

Applicant: ADVANCED TECH MATERIALS

Inventor： CHEN LI-MIN ,  LIPPY STEVEN ,  COOPER EMANUEL I ,  SONG LINGYAN

IPC: G03F7/32 ,  C09K13/00

Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., cobalt, ruthenium and copper, and insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant and one etchant, may contain various corrosion inhibitors to ensure selectivity.

公开(公告)号：SG11201507014RA

公开(公告)日：2015-10-29

申请号：SG11201507014R

申请日：2014-03-04

Applicant: ADVANCED TECH MATERIALS ,  ATMI TAIWAN CO LTD

Inventor： CHEN LI-MIN ,  COOPER EMANUEL I ,  LIPPY STEVEN ,  SONG LINGYAN ,  HSU CHIA-JUNG ,  TU SHENG-HUNG ,  WANG CHIEH JU ,  CHEN LI-MIN ,  COOPER EMANUEL I ,  LIPPY STEVEN ,  SONG LINGYAN ,  HSU CHIA-JUNG ,  TU SHENG-HUNG ,  WANG CHIEH JU

IPC: C09K13/00 ,  C09K13/04 ,  C09K13/08 ,  G03F7/42

Abstract: Semi-aqueous compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten and copper, and insulating materials from a microelectronic device having same thereon. The semi-aqueous compositions contain at least one oxidant, at least one etchant, and at least one organic solvent, may contain various corrosion inhibitors to ensure selectivity.

公开(公告)号：SG187959A1

公开(公告)日：2013-03-28

申请号：SG2013014071

申请日：2011-08-26

Applicant: ADVANCED TECH MATERIALS

Inventor： CHEN TIANNIU ,  BILODEAU STEVEN ,  SHEU CHIMIN ,  NAKANISHI MUTSUMI ,  MATSUOKA MASAHIRO ,  NAKAYAMA FUMIO ,  ZHANG PENG ,  KORZENSKI MICHAEL B ,  COOPER EMANUEL I ,  VECCHARELLI KATE ,  PAYNE MAKONNEN

Abstract: Methods of reducing the capillary forces experienced by fragile high aspect ratio structures during drying to substantially prevent damage to said high aspect ratio structures during drying. They include modifying the surface of the high aspect ratio structures such that the forces are sufficiently minimized and as such less than 10% of the high aspect ratio features will have bent or collapsed during drying of the structure having said features thereon.