公开(公告)号：WO2011056515A3

公开(公告)日：2011-08-25

申请号：PCT/US2010053977

申请日：2010-10-25

Applicant: ADVANCED TECH MATERIALS ,  JONES EDWARD E ,  YEDAVE SHARAD N ,  TANG YING ,  CHAMBERS BARRY LEWIS ,  KAIM ROBERT ,  SWEENEY JOSEPH D ,  BYL OLEG ,  ZOU PENG

Inventor： JONES EDWARD E ,  YEDAVE SHARAD N ,  TANG YING ,  CHAMBERS BARRY LEWIS ,  KAIM ROBERT ,  SWEENEY JOSEPH D ,  BYL OLEG ,  ZOU PENG

IPC: H01J37/317 ,  H01L21/265

CPC classification number: H01L21/265 ,  C23C14/48 ,  C23C14/52 ,  H01J37/08 ,  H01J37/3171 ,  H01J37/32055 ,  H01J37/32412 ,  H01J37/32449 ,  H01J2237/006 ,  H01J2237/022

Abstract: An ion implantation system and method, providing cooling of dopant gas in the dopant gas feed line, to combat heating and decomposition of the dopant gas by arc chamber heat generation, e.g., using boron source materials such as B2F4 or other alternatives to BF3. Various arc chamber thermal management arrangements are described, as well as modification of plasma properties, specific flow arrangements, cleaning processes, power management, eqillibrium shifting, optimization of extraction optics, detection of deposits in flow passages, and source life optimization, to achieve efficient operation of the ion implantation system.

Abstract translation: 一种离子注入系统和方法，提供掺杂剂气体进料管线中掺杂剂气体的冷却，以防止通过电弧室产生热量来加热和分解掺杂剂气体，例如使用硼源材料如B2F4或BF3的其它替代物。 描述了各种电弧室热管理装置，以及等离子体性质，特定流动布置，清洁过程，功率管理，eqillibrium变换，萃取光学器件的优化，流动通道中沉积物的检测以及源寿命优化的修改，以实现高效 离子注入系统的操作。

公开(公告)号：WO2006047373A3

公开(公告)日：2009-04-23

申请号：PCT/US2005038102

申请日：2005-10-21

Applicant: ADVANCED TECH MATERIALS ,  DIMEO FRANK JR ,  DIETZ JAMES ,  OLANDER W KARL ,  KAIM ROBERT ,  BISHOP STEVEN E ,  NEUNER JEFFREY W ,  ARNO JOSE I

Inventor： DIMEO FRANK JR ,  DIETZ JAMES ,  OLANDER W KARL ,  KAIM ROBERT ,  BISHOP STEVEN E ,  NEUNER JEFFREY W ,  ARNO JOSE I

IPC: B08B7/00 ,  B08B7/04

CPC classification number: C23G5/00 ,  C23C14/564 ,  H01J37/08 ,  H01J37/32862 ,  H01J2237/022 ,  H01J2237/31701

Abstract: A method and apparatus for cleaning residue from components of the vacuum chamber and beamline of an ion implanter used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive halide composition for sufficient time and under sufficient conditions to at least partially remove the residue. The gas-phase reactive halide composition is chosen to react selectively with the residue, while not reacting with the components of the ion source region of the vacuum chamber.

Abstract translation: 一种清洁残余物的方法和装置，用于制造微电子器件中使用的离子注入机的真空室和束线组件。 为了有效地除去残留物，将组分与气相反应性卤化物组合物接触足够的时间并在足够的条件下至少部分地除去残余物。 选择气相反应性卤化物组合物与残留物选择性反应，而不与真空室的离子源区域的组分反应。

公开(公告)号：WO2006047410A2

公开(公告)日：2006-05-04

申请号：PCT/US2005038173

申请日：2005-10-24

Applicant: ADVANCED TECH MATERIALS ,  DIETZ JAMES ,  BISHOP STEVEN E ,  MCMANUS JAMES V ,  LURCOTT STEVEN M ,  WODJENSKI MICHAEL J ,  KAIM ROBERT ,  DIMEO FRANK JR

Inventor： DIETZ JAMES ,  BISHOP STEVEN E ,  MCMANUS JAMES V ,  LURCOTT STEVEN M ,  WODJENSKI MICHAEL J ,  KAIM ROBERT ,  DIMEO FRANK JR

IPC: H01L21/66 ,  B67D7/06 ,  B67D99/00

CPC classification number: G01N33/00 ,  F17C11/00 ,  G01F15/063 ,  G01F22/02 ,  G01F23/0076 ,  G01M3/32 ,  G01M3/3236 ,  G06Q10/087 ,  G06Q30/04 ,  G06Q50/04 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L22/10 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/48 ,  H01L24/82 ,  H01L25/03 ,  H01L25/0652 ,  H01L25/16 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/24011 ,  H01L2224/2518 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01058 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/19042 ,  H05K1/185 ,  H05K3/4602 ,  H05K2203/0165 ,  H05K2203/085 ,  H05K2203/1469 ,  Y02P90/30 ,  Y10T29/4913 ,  Y10T29/49133 ,  Y10T29/49165 ,  Y10T29/53183 ,  H01L2224/45099

Abstract: A monitoring system (100) for monitoring fluid in a fluid supply vessel (22, 24, 26, 28, 108) during operation including dispensing of fluid from the fluid supply vessel. The monitoring system includes (i) one or more sensors (114, 126) for monitoring a characteristic of the fluid supply vessel or the fluid dispensed therefrom, (ii) a data acquisition module (40, 132, 146) operatively coupled to the one or more sensors to receive monitoring data therefrom and responsively generate an output correlative to the characteristic monitored by the one or more sensors, and (iii) a processor (50, 150) and display (52, 150) operatively coupled with the data acquisition module and arranged to process the output from the data acquisition module and responsively output a graphical representation of fluid in the fluid supply vessel, billing documents, usage reports, and/or resupply requests.

Abstract translation: 一种监视系统（100），用于在操作期间监视流体供给容器（22,24,26,28,108）中的流体，包括从流体供给容器分配流体。 监测系统包括（i）用于监测流体供应容器或从其分配的流体的特性的一个或多个传感器（114,126），（ii）数据采集模块（40,132,146），其可操作地耦合到所述一个 或更多传感器以从其接收监测数据并响应地产生与由所述一个或更多个传感器监测的特性相关的输出，以及（iii）处理器（50,150）和显示器（52,150），可操作地与所述数据采集模块 并且布置成处理来自数据采集模块的输出并且响应地输出流体供应容器中的流体的图形表示，计费文档，使用报告和/或再供应请求。

公开(公告)号：SG2014006068A

公开(公告)日：2014-03-28

申请号：SG2014006068

申请日：2011-08-16

Applicant: ADVANCED TECH MATERIALS

Inventor： KAIM ROBERT ,  SWEENEY JOSEPH D ,  BYL OLEG ,  YEDAVE SHARAD N ,  JONES EDWARD E ,  ZOU PENG ,  TANG YING ,  CHAMBERS BARRY LEWIS ,  RAY RICHARD S

Abstract: An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B 2 F 4 . Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.

公开(公告)号：SG188215A1

公开(公告)日：2013-04-30

申请号：SG2013011028

申请日：2011-08-16

Applicant: ADVANCED TECH MATERIALS

Inventor： KAIM ROBERT ,  SWEENEY JOSEPH D ,  BYL OLEG ,  YEDAVE SHARAD N ,  JONES EDWARD E ,  ZOU PENG ,  TANG YING ,  CHAMBERS BARRY LEWIS ,  RAY RICHARD S

Abstract: An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.

公开(公告)号：SG173621A1

公开(公告)日：2011-09-29

申请号：SG2011057536

申请日：2009-08-12

Applicant: ADVANCED TECH MATERIALS

Inventor： SWEENEY JOSEPH D ,  YEDAVE SHARAD N ,  BYL OLEG ,  KAIM ROBERT ,  ELDRIDGE DAVID ,  FENG LIN ,  BISHOP STEVEN E ,  OLANDER W KARL ,  TANG YING

Abstract: Cleaning of an ion implantation system or components thereof, utilizing temperature and/or a reactive cleaning reagent enabling growth/etching of the cathode in an indirectly heated cathode for an ion implantation system by monitoring the cathode bias power and taking corrective action depending upon compared values to etch or regrow the cathode.

公开(公告)号：SG156669A1

公开(公告)日：2009-11-26

申请号：SG2009070137

申请日：2005-10-21

Applicant: ADVANCED TECH MATERIALS

Inventor： DIMEO FRANK JR ,  DIETZ JAMES ,  OLANDER W KARL ,  KAIM ROBERT ,  BISHOP STEVEN E ,  NEUNER JEFFREY W ,  ARNO JOSE I

Abstract: A method and apparatus for cleaning residue from components of the vacuum chamber and beamline of an ion implanter used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive halide composition for sufficient time and under sufficient conditions to at least partially remove the residue. The gas-phase reactive halide composition is chosen to react selectively with the residue, while not reacting with the components of the ion source region of the vacuum chamber.

公开(公告)号：SG190729A1

公开(公告)日：2013-07-31

申请号：SG2013041694

申请日：2011-11-26

Applicant: ADVANCED TECH MATERIALS

Inventor： OLANDER W KARL ,  KAIM ROBERT ,  SWEENEY JOSEPH D ,  DESPRES JOSEPH R

Abstract: Dopant source gas supply arrangements and methods are described, wherein one or more dopant source gas supply vessels is contained inside an outer enclosure of an ion implantation system, e.g., in a gas box within such enclosure. In one implementation, a dopant source gas supply vessel is positioned in remote relationship to the gas box of the ion implantation system, with a dopant source gas local vessel in the gas box, and a supply line interconnecting the dopant source gas supply vessel in supply relationship to the dopant source gas local vessel, in which the supply line is adapted to flow dopant source gas from the supply vessel to the local vessel only when the ion implantation system is in a non-operational state, and to be evacuated or filled with an inert pressurized gas when the ion implantation system is in an operational state.

公开(公告)号：SG188150A1

公开(公告)日：2013-03-28

申请号：SG2013010889

申请日：2009-02-11

Applicant: ADVANCED TECH MATERIALS ,  SWEENEY JOSEPH D ,  YEDAVE SHARAD N ,  BYL OLEG ,  KAIM ROBERT ,  ELDRIDGE DAVID ,  SERGI STEVEN ,  FENG LIN ,  BISHOP STEVEN E ,  OLANDER KARL W ,  TANG YING

Inventor： SWEENEY JOSEPH D ,  YEDAVE SHARAD N ,  BYL OLEG ,  KAIM ROBERT ,  ELDRIDGE DAVID ,  SERGI STEVEN ,  FENG LIN ,  BISHOP STEVEN E ,  OLANDER KARL W ,  TANG YING

Abstract: ION SOURCE CLEANING IN SEMICONDUCTOR PROCESSING SYSTEMSCleaning of an ion implantation system or components thereof, utilizing a reactive cleaning reagent enabling growth/etching of the filament in an ion source of the arc chamber, by appropriate control of temperature in the arc chamber to effect the desired filament growth or alternative filament etching. Also described is the use of reactive gases such as XeFx, WFx, AsFx, PFx and TaFx, wherein x has a stoichioimetrically appropriate value or range of values, for cleaning regions of ion implanters, or components of implanters, in in situ or ex situ cleaning arrangements, under ambient temperature, elevated temperature or plasma conditions. Among specific reactive cleaning agents, BrF3 is described as useful for cleaning ion implant systems or component(s) thereof, in in situ or ex situ cleaning arrangements. Also described is a method of cleaning the forelines of an ion implant system for at least partial removal of ionization-related deposit from said forelines, comprising contacting said forelines with a cleaning gas wherein said cleaning gas is chemically reactive with said deposit. Also described is a method of improving the performance and extending the lifetime of an ion implant system, comprising contacting the cathode with a gas mixture.[ No Suitable Figure ]

公开(公告)号：MY147702A

公开(公告)日：2013-01-15

申请号：MYPI20054978

申请日：2005-10-24

Applicant: ADVANCED TECH MATERIALS

Inventor： DIETZ JAMES ,  BISHOP STEVEN E ,  MCMANUS JAMES V ,  LURCOTT STEVEN M ,  WODJENSKI MICHAEL J ,  KAIM ROBERT ,  DIMEO FRANK JR

IPC: B67D7/06 ,  G01F23/00 ,  B67D99/00

Abstract: A MONITORING SYSTEM (100) FOR MONITORING FLUID IN A FLUID SUPPLY VESSEL (22, 24, 26, 28, 108) DURING OPERATION INCLUDING DISPENSING OF FLUID FROM THE FLUID SUPPLY VESSEL. THE MONITORING SYSTEM INCLUDES (I) ONE OR MORE SENSORS (114, 126) FOR MONITORING A CHARACTERISTIC OF THE FLUID SUPPLY VESSEL OR THE FLUID DISPENSED THEREFROM, (II) A DATA ACQUISITION MODULE (40, 132, 146) OPERATIVELY COUPLED TO THE ONE OR MORE SENSORS TO RECEIVE MONITORING DATA THEREFROM AND RESPONSIVELY GENERATE AN OUTPUT CORRELATIVE TO THE CHARACTERISTIC MONITORED BY THE ONE OR MORE SENSORS, AND (III) A PROCESSOR (50, 150) AND DISPLAY (52, 150) OPERATIVELY COUPLED WITH THE DATA ACQUISITION MODULE AND ARRANGED TO PROCESS THE OUTPUT FROM THE DATA ACQUISITION MODULE AND RESPONSIVELY OUTPUT A GRAPHICAL REPRESENTATION OF FLUID IN THE FLUID SUPPLY VESSEL, BILLING DOCUMENTS, USAGE REPORTS, AND/OR RESUPPLY REQUESTS.