公开(公告)号：WO2017202665A1

公开(公告)日：2017-11-30

申请号：PCT/EP2017/061854

申请日：2017-05-17

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN HAREN, Richard, Johannes, Franciscus ,  JUNGBLUT, Reiner, Maria ,  VAN DIJK, Leon, Paul ,  ROELOFS, Willem, Seine, Christian ,  TEL, Wim, Tjibbo ,  HUNSCHE, Stefan ,  VAN DER SCHAAR, Maurits

IPC: G03F7/20 ,  G03F1/72

Abstract: A method is proposed involving obtaining data regarding an expected focus offset during a patterning process due to topography of a region of a substrate surface. A modification of a transmission or reflection of a region of a patterning device associated with the region of the substrate surface is determined based on the data. Using the patterning device modified according the determined modification during the patterning process mitigates an impact of the substrate topography on a parameter of the patterning process.

Abstract translation: 提出了一种方法，其涉及获得关于由于衬底表面的区域的形貌而在图案化过程期间的期望的聚焦偏移的数据。 基于该数据确定与衬底表面的区域相关联的图案形成装置的区域的透射或反射的修改。 在图案化过程期间使用根据所确定的修改而修改的图案形成装置减轻了衬底形貌对图案化过程的参数的影响。

公开(公告)号：WO2016202546A1

公开(公告)日：2016-12-22

申请号：PCT/EP2016/061847

申请日：2016-05-25

Applicant: ASML NETHERLANDS B.V.

Inventor： HUNSCHE, Stefan ,  ALDANA LASO, Rafael ,  JAIN, Vivek, Kumar ,  JOCHEMSEN, Marinus ,  ZHOU, Xinjian

IPC: G03F7/20

CPC classification number: G03F7/7065 ,  G06T3/0068 ,  G06T7/001 ,  G06T2207/30148

Abstract: A computer-implemented method of defect validation for a device manufacturing process, the method comprising: obtaining a first image of a pattern processed into an area on a substrate using the device manufacturing process under a first condition; obtaining a metrology image from the area; aligning the metrology image and the first image; and determining from the first image and the metrology image whether the area contains a defect, based on one or more classification criteria.

Abstract translation: 一种用于设备制造过程的计算机实现的缺陷验证方法，所述方法包括：使用所述设备制造过程在第一条件下获得处理到衬底上的区域中的图案的第一图像; 从该地区获取计量图像; 对准测量图像和第一图像; 以及基于一个或多个分类标准，从所述第一图像和所述测量图像确定所述区域是否包含缺陷。

公开(公告)号：WO2016142169A1

公开(公告)日：2016-09-15

申请号：PCT/EP2016/053742

申请日：2016-02-23

Applicant: ASML NETHERLANDS B.V.

Inventor： HUNSCHE, Stefan ,  JANG, Chiou-Hung ,  JOCHEMSEN, Marinus ,  TOMASELLO, Vito

IPC: G03F7/20

CPC classification number: G03F7/70625 ,  G03F7/70125 ,  G03F7/70641

Abstract: Disclosed herein is a computer-implemented method to improve a lithographic process of processing a portion of a design layout onto a substrate using a lithographic apparatus, the method including: adjusting a first processing parameter among processing parameters of the lithographic process to cause the processing to be more tolerant to perturbations of at least one of the processing parameters during processing; and adjusting a second processing parameter among processing parameters of the lithographic process to cause the processing to be more tolerant to perturbations of at least one of the processing parameters during processing.

Abstract translation: 本文公开了一种计算机实现的方法，用于使用光刻设备改进将设计布局的一部分处理到衬底上的光刻工艺，该方法包括：调整光刻工艺的处理参数之间的第一处理参数，以使处理 在处理过程中更加容忍对至少一个处理参数的扰动; 以及调整所述光刻处理的处理参数之间的第二处理参数，以使所述处理在处理期间更加容忍至少一个所述处理参数的扰动。

公开(公告)号：WO2016128189A1

公开(公告)日：2016-08-18

申请号：PCT/EP2016/051073

申请日：2016-01-20

Applicant: ASML NETHERLANDS B.V.

Inventor： VELLANKI, Venugopal ,  JAIN, Vivek, Kumar ,  HUNSCHE, Stefan

IPC: G03F7/20

CPC classification number: G03F7/7065 ,  G03F1/60 ,  G03F1/84 ,  G03F7/705 ,  G03F7/70525 ,  G03F7/70641 ,  G03F7/70666 ,  G06N99/005

Abstract: Disclosed herein is a computer-implemented defect prediction method for a device manufacturing process involving processing one or more patterns onto a substrate, the method including: determining values of one or more processing parameters under which the one or more patterns are processed; and determining or predicting, using the values of the one or more processing parameters, existence, probability of existence, a characteristic, and/or a combination selected from the foregoing, of a defect resulting from production of the one or more patterns with the device manufacturing process.

Abstract translation: 本文公开了一种用于将衬底上的一个或多个图案处理的器件制造工艺的计算机实现的缺陷预测方法，该方法包括：确定处理一个或多个图案的一个或多个处理参数的值; 以及使用所述一个或多个处理参数的值，存在，存在概率，特征，和/或从上述选择的组合来确定或预测由所述设备生成所述一个或多个图案所导致的缺陷 制造工艺。

公开(公告)号：WO2021165419A1

公开(公告)日：2021-08-26

申请号：PCT/EP2021/054064

申请日：2021-02-18

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN INGEN SCHENAU, Koenraad ,  SLACHTER, Abraham ,  TIMOSHKOV, Vadim Yourievich ,  KOOIMAN, Marleen ,  VAN LARE, Marie-Claire ,  DILLEN, Hermanus, Adrianus ,  HUNSCHE, Stefan ,  COLINA, Luis, Alberto, Colina, Santamaría ,  JIANG, Aiqin ,  WANG, Fuming ,  RAGHUNATHAN, Sudharshanan

IPC: G03F7/20

Abstract: Described herein are methods related to improving a simulation processes and solutions (e.g., retargeted patterns) associated with manufacturing of a chip. A method includes obtaining a plurality of dose-focus settings, and a reference distribution based on measured values of the characteristic of a printed pattern associated with each setting of the plurality of dose-focus settings. The method further includes, based on an adjustment model and the plurality of dose-focus settings, determining the probability density function (PDF) of the characteristic such that an error between the PDF and the reference distribution is reduced. The PDF can be a function of the adjustment model and variance associated with dose, the adjustment model being configured to change a proportion of non-linear dose sensitivity contribution to the PDF. A process window can be adjusted based on the determined PDF of the characteristic.

公开(公告)号：WO2021037484A1

公开(公告)日：2021-03-04

申请号：PCT/EP2020/071741

申请日：2020-07-31

Applicant: ASML NETHERLANDS B.V.

Inventor： HUNSCHE, Stefan ,  WANG, Fuming ,  LUO, Ya ,  NIKOLSKI, Pioter

IPC: G03F7/20 ,  G06N20/00 ,  G03F1/36

Abstract: Systems and methods for predicting substrate geometry associated with a patterning process are described. Input information including geometry information and/or process information for a pattern are received; and, using a machine learning prediction model, multi-dimensional output substrate geometry is predicted. The multi-dimensional output information comprises pattern probability images. A stochastic edge placement error band and/or a stochastic failure rate may be predicted based on the pattern probability images. The input information comprises simulated aerial images, simulated resist images, target substrate dimensions, and/or data from a scanner associated with semiconductor device manufacturing. Different aerial images may correspond to different heights in resist layers associated with the patterning process, for example.

公开(公告)号：WO2020200993A1

公开(公告)日：2020-10-08

申请号：PCT/EP2020/058488

申请日：2020-03-26

Applicant: ASML NETHERLANDS B.V.

Inventor： MIDDLEBROOKS, Scott, Anderson ,  KOOPMAN, Adrianus, Cornelis, Matheus ,  VAN KRAAIJ, Markus, Gerardus, Martinus, Maria ,  PISARENCO, Maxim ,  HUNSCHE, Stefan

IPC: G03F7/20 ,  G06N3/02 ,  G06N3/08 ,  G06N3/04 ,  G06N20/00

Abstract: Described herein is a method for training a machine learning model configured to predict a substrate image corresponding to a printed pattern of a substrate as measured via a metrology tool. The method involves obtaining a training data set comprising (i) metrology data of the metrology tool used to measure the printed pattern of the substrate, and (ii) a mask pattern employed for imaging the printed pattern on the substrate; and training, based on the training data set, a machine learning model to predict the substrate image of the substrate as measured by the metrology tool such that a cost function is improved, wherein the cost function comprises a relationship between the predicted substrate image and the metrology data.

公开(公告)号：WO2018114246A3

公开(公告)日：2018-06-28

申请号：PCT/EP2017/080704

申请日：2017-11-28

Applicant: ASML NETHERLANDS B.V.

Inventor： HASAN, Tanbir ,  JAIN, Vivek, Kumar ,  HUNSCHE, Stefan ,  LA FONTAINE, Bruno

IPC: G03F7/20 ,  G03F9/00

Abstract: A method of topography determination, the method including: obtaining a first focus value derived from a computational lithography model modeling patterning of an unpatterned substrate or derived from measurements of a patterned layer on an unpatterned substrate; obtaining a second focus value derived from measurement of a substrate having a topography; and determining a value of the topography from the first and second focus values.

公开(公告)号：WO2017194281A1

公开(公告)日：2017-11-16

申请号：PCT/EP2017/059328

申请日：2017-04-20

Applicant: ASML NETHERLANDS B.V.

Inventor： SU, Jing ,  ZOU, Yi ,  LIN, Chenxi ,  HUNSCHE, Stefan ,  JOCHEMSEN, Marinus ,  LU, Yen-Wen ,  CHEONG, Lin, Lee

IPC: G03F7/20 ,  G06K9/00 ,  G06F17/50

Abstract: Disclosed herein are various methods of identifying a hot spot from a design layout or of predicting whether a pattern in a design layout is defective, using a machine learning model. An example method disclosed herein includes obtaining sets of characteristics of performance of hot spots, respectively, under a plurality of process conditions, respectively, in a device manufacturing process; determining, for each of the process conditions, for each of the hot spots, based on the characteristics under that process condition, whether that hot spot is defective; obtaining characteristics of each of the process conditions; obtaining characteristics of each of the hot spots; and training a machine learning model using a training set comprising the characteristics of one of the process conditions, the characteristics of one of the hot spots, and whether that hot spot is defective under that process condition.

Abstract translation: 这里公开了使用机器学习模型从设计布局识别热点或预测设计布局中的模式是否有缺陷的各种方法。 本文公开的示例方法包括分别在设备制造过程中的多个过程条件下分别获得热点性能的特征组; 基于在该处理条件下的特性，针对每个处理条件确定每个热点的热点是否有缺陷; 获得每个工艺条件的特性; 获得每个热点的特征; 并且使用训练集训练机器学习模型，所述训练集包括过程条件之一的特征，其中一个热点的特征以及在该过程条件下该热点是否有缺陷。

公开(公告)号：WO2015120996A1

公开(公告)日：2015-08-20

申请号：PCT/EP2015/050168

申请日：2015-01-07

Applicant: ASML NETHERLANDS B.V.

Inventor： HUNSCHE, Stefan ,  VELLANKI, Venugopal

IPC: G03F7/20

CPC classification number: G06F17/5009 ,  G03F7/705 ,  G03F7/70525 ,  H01L22/20

Abstract: Disclosed herein is a computer-implemented defect prediction method for a device manufacturing process involving processing a pattern onto a substrate, the method comprising: identifying a processing window limiting pattern (PWLP) from the pattern; determining a processing parameter under which the PWLP is processed; and determining or predicting, using the processing parameter, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the PWLP with the device manufacturing process.

Abstract translation: 本发明公开了一种用于在衬底上处理图案的器件制造工艺的计算机实现的缺陷预测方法，所述方法包括：从所述图案中识别处理窗口限制模式（PWLP）; 确定处理所述PWLP的处理参数; 以及使用处理参数来确定或预测由PWLP产生的缺陷与设备制造过程的存在，存在概率，特性或其组合。