RADIATION SOURCE-COLLECTOR AND METHOD FOR MANUFACTURE
    13.
    发明申请
    RADIATION SOURCE-COLLECTOR AND METHOD FOR MANUFACTURE 审中-公开
    辐射源收集器及其制造方法

    公开(公告)号:WO2016058822A1

    公开(公告)日:2016-04-21

    申请号:PCT/EP2015/072376

    申请日:2015-09-29

    Abstract: A multilayer optics is configured for reflection of radiation having a wavelength λ, the multilayer optics comprising a multilayer stack (300) of alternating layer pairs, wherein each pair thereof comprises a first/second layer of thickness d1/d2, wherein a periodic length p=d1+d2 of each pair of alternating layers satisfies: m λ = 2 p sinΘ, wherein m = 1, 2, 3, etc. is an integer representing the order of the Bragg diffraction peak and Θ is the angle between an incident radiation and a scattering plane of the multilayer optics; a protective region (310) comprising pairs of alternating protective layers, each pair thereof comprising a first/second protective layer of thickness ds1/ds2, wherein a periodic length ps=ds1+ds2 of each pair of alternating protective layers satisfies: m λ = 2 ps sinΘ and ps = p N, wherein N is an integer equal or larger than 2. The multilayer mirror may optionally be provided with a capping layer (320). There is further disclosed an apparatus for extreme ultraviolet lithography comprising: a vacuum container comprising an optical element having an optically active surface, a gas supply system comprising a source of an anti-blistering gaseous mixture, an exhauster configured to exhaust gas in said vacuum container; wherein the gas supply system is arranged to provide the anti-blistering gaseous mixture at the optically active surface of the optical element, and wherein the anti-blistering gaseous mixture comprises an oxygen containing gas compound at a partial pressure ranging from 5e-8 to 1e-4 mbar.

    Abstract translation: 多层光学器件被配置用于反射具有波长λ的辐射,所述多层光学器件包括交替层对的多层堆叠(300),其中每对包括厚度为d1 / d2的第一/第二层,其中周期长度p 每对交替层的= d1 + d2满足:mλ= 2 psinθ,其中m = 1,2,3等是表示布拉格衍射峰的顺序的整数,Θ是入射辐射 和多层光学器件的散射面; 包括交替保护层对的保护区域(310),每对保护层包括厚度为ds1 / ds2的第一/第二保护层,其中每对交替保护层的周期长度ps = ds1 + ds2满足:mλ= 2pssinΘ和ps = p N,其中N是等于或大于2的整数。多层反射镜可以可选地设置有覆盖层(320)。 还公开了一种用于极紫外光刻的装置,包括:真空容器,其包括具有光学活性表面的光学元件,气体供应系统,其包括防起泡气体混合物源,排气器,其构造成在所述真空容器 ; 其中所述气体供应系统被布置成在所述光学元件的光学活性表面处提供所述防起泡气体混合物,并且其中所述防起泡气体混合物包含分压为5e-8至1e的含氧气体化合物 -4毫巴

    LITHOGRAPHIC APPARATUS
    15.
    发明申请

    公开(公告)号:WO2019228784A1

    公开(公告)日:2019-12-05

    申请号:PCT/EP2019/062053

    申请日:2019-05-10

    Abstract: Disclosed herein is a lithographic apparatus, comprising: an illumination system configured to condition a radiation beam; a patterning device (601) configured to impart the radiation beam with a pattern in its cross-section to form a patterned radiation beam; a pellicle (602) configured to cover a surface of the patterning device (601); a substrate table configured to hold a substrate; a projection system configured to project the patterned radiation beam onto a target portion of a substrate when the substrate is held by the substrate table, wherein the projection system comprises one or more optical elements; a first set of one or more outlets (603) for outputting a first fluid into a first region, wherein the first region abuts and/or comprises the pellicle (602); and a second set of one or more outlets (605) configured to output a second fluid into a second region that comprises the one or more optical elements of the projection system; and wherein the second fluid is different from the first fluid. Advantageously, the fluid in the first region protects the pellicle (602) from damage by the fluid in the second region. A pellicle that would otherwise be damaged by the fluid in the second region can therefore be used.

    LITHOGRAPHIC APPARATUS AND METHOD
    17.
    发明申请

    公开(公告)号:WO2018108444A1

    公开(公告)日:2018-06-21

    申请号:PCT/EP2017/079503

    申请日:2017-11-16

    CPC classification number: G03F7/70325 G03F7/70316

    Abstract: A lithographic apparatus comprising an illumination system (IL) for providing a beam of radiation (PB); a support structure (MT) for supporting a patterning device (MA), the patterning device serving to impart the radiation beam with a pattern in its cross-section; a substrate table (WT) for holding a substrate (W); and a flat lens (FL), wherein the flat lens is positioned between the support structure and the substrate table, and comprises at least four cells, wherein each cell consists of a first layer and a second layer of material, and wherein the first layer is made of a material with permittivity such that the real part of permittivity is negative and the imaginary part of permittivity is positive, and the second layer is made of a material with permittivity such that the real part of permittivity is positive and the imaginary part of permittivity is positive.

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