公开(公告)号：US09847451B2

公开(公告)日：2017-12-19

申请号：US15428395

申请日：2017-02-09

Applicant: EPISTAR CORPORATION

Inventor： Chen Ou ,  Chiu-Lin Yao

IPC: H01L33/20 ,  H01L33/32 ,  H01L33/22 ,  H01L33/30 ,  H01L33/12

CPC classification number: H01L33/20 ,  H01L33/12 ,  H01L33/22 ,  H01L33/24 ,  H01L33/30 ,  H01L33/32 ,  H01L2933/0091

Abstract: A light-emitting device comprises a substrate having a top surface and a plurality of patterned units protruding from the top surface; and a light-emitting stack formed on the substrate and having an active layer with a first surface substantially parallel to the top surface, wherein one of the plurality of patterned units comprises a plurality of connecting sides constituting a polygon shape in a top view of the light-emitting device, the one of the plurality of patterned units comprises a vertex and a plurality of inclined surfaces respectively extending from the plurality of connecting sides, the plurality of inclined surfaces commonly join at the vertex in a cross-sectional view of the light-emitting device, the vertex being between the top surface of the substrate and the first surface of the active layer, and six of the plurality of patterned units forms a hexagon in the top view of the light-emitting device.

公开(公告)号：US09768227B2

公开(公告)日：2017-09-19

申请号：US14470396

申请日：2014-08-27

Applicant: Epistar Corporation

Inventor： Chen Ou ,  Chun-Wei Chang ,  Chih-Wei Wu ,  Sheng-Chih Wang ,  Hsin-Mei Tsai ,  Chia-Chen Tsai ,  Chuan-Cheng Chang

IPC: H01L27/15 ,  H01L33/38 ,  H01L33/20 ,  H01L33/08

CPC classification number: H01L27/15 ,  H01L33/08 ,  H01L33/20 ,  H01L33/38

Abstract: A light-emitting element comprises a first semiconductor layer, a first light-emitting structure and a second light-emitting structure on the first semiconductor layer, a first electrode on the first semiconductor layer, a second electrode on the first light-emitting structure, a first trench between the first light-emitting structure and the second light-emitting structure, exposing a first upper surface of the first semiconductor layer, and a second trench formed in the first light-emitting structure, exposing a second upper surface of the first semiconductor layer, wherein the first trench is devoid of the first electrode and the second electrode formed therein, wherein the first electrode is formed in the second trench.

公开(公告)号：US20140110741A1

公开(公告)日：2014-04-24

申请号：US13654486

申请日：2012-10-18

Applicant: EPISTAR CORPORATION

Inventor： Chen Ou ,  Chun-Wei Chang ,  Chih-Wei Wu

IPC: H01L33/36

CPC classification number: H01L33/36 ,  H01L33/14 ,  H01L33/20 ,  H01L33/38 ,  H01L33/385 ,  H01L33/42

Abstract: A light-emitting device, includes: a substrate; a light-emitting structure formed on the substrate and including a first portion, and a second portion where no optoelectronic conversion occurs therein; and a first electrode located on both the first portion and the second portion.

Abstract translation: 发光装置，包括：基板; 形成在所述基板上并且包括第一部分的发光结构以及其中不发生光电转换的第二部分; 以及位于第一部分和第二部分上的第一电极。

公开(公告)号：US11990575B2

公开(公告)日：2024-05-21

申请号：US18205920

申请日：2023-06-05

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Ying Wang ,  Chih-Hao Chen ,  Chien-Chih Liao ,  Chao-Hsing Chen ,  Wu-Tsung Lo ,  Tsun-Kai Ko ,  Chen Ou

IPC: H01L33/60 ,  H01L21/78 ,  H01L33/08 ,  H01L33/14 ,  H01L33/38 ,  H01L33/44 ,  H01L33/46 ,  H01L33/54 ,  H01L33/56 ,  H01L33/00 ,  H01L33/22

CPC classification number: H01L33/60 ,  H01L21/78 ,  H01L33/38 ,  H01L33/46 ,  H01L33/54 ,  H01L33/56

Abstract: A light-emitting device comprises a substrate comprising a sidewall, a first top surface, and a second top surface, wherein the second top surface is closer to the sidewall of the substrate than the first top surface to the sidewall of the substrate; a semiconductor stack formed on the substrate comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a dicing street surrounding the semiconductor stack, and exposing the first top surface and the second top surface of the substrate; a protective layer covering the semiconductor stack; a reflective layer comprising a Distributed Bragg Reflector structure covering the protective layer; and a cap layer covering the reflective layer, wherein the second top surface of the substrate is not covered by the protective layer, the reflective layer, and the cap layer.

公开(公告)号：US11935981B2

公开(公告)日：2024-03-19

申请号：US17364175

申请日：2021-06-30

Applicant: EPISTAR CORPORATION

Inventor： Chu-Jih Su ,  Chia-Hsiang Chou ,  Wei-Chih Peng ,  Wen-Luh Liao ,  Chao-Shun Huang ,  Hsuan-Le Lin ,  Shih-Chang Lee ,  Mei Chun Liu ,  Chen Ou

IPC: H01L31/055 ,  H01L25/16 ,  H01L31/0224 ,  H01L31/0304 ,  H01L31/101 ,  H01L31/12

CPC classification number: H01L31/055 ,  H01L25/167 ,  H01L31/022408 ,  H01L31/03046 ,  H01L31/101 ,  H01L31/125

Abstract: A photo-detecting device includes a first semiconductor layer with a first dopant, a light-absorbing layer, a second semiconductor layer, and a semiconductor contact layer. The second semiconductor layer is located on the first semiconductor layer and has a first region and a second region, the light absorbing layer is located between the first semiconductor layer and the second semiconductor layer and has a third region and a fourth region, the semiconductor contact layer contacts the first region. The first region includes a second dopant and a third dopant, the second region includes second dopant, and the third region includes third dopant. The semiconductor contact layer has a first thickness greater than 50 Å and smaller than 1000 Å.

公开(公告)号：US20230010081A1

公开(公告)日：2023-01-12

申请号：US17860749

申请日：2022-07-08

Applicant: EPISTAR CORPORATION

Inventor： Chun-Yu Lin ,  Jun-Yi Li ,  Yi-Yang Chiu ,  Chun-Wei Chang ,  Yi-Ming Chen ,  Chang-Hsiu Wu ,  Wen-Luh Liao ,  Chen Ou ,  Wei-Wun Jheng

IPC: H01L33/40 ,  H01L33/22 ,  H01L33/44 ,  H01L33/38 ,  H01L33/42

Abstract: A semiconductor device includes a semiconductor stack, a third semiconductor structure, a dielectric layer, and a reflective layer under the third semiconductor structure. The semiconductor stack includes a first semiconductor structure, an active structure, a second semiconductor structure. The first semiconductor structure has a first surface which includes a first portion and a second portion, and the first surface has a first area. The third semiconductor structure connects to the first portion, and has a second surface with a second area. The dielectric layer connects to the second portion and includes a plurality of openings, and the plurality of openings have a third area. A ratio of the second area to the first area is between 0.1˜0.7, and a ratio of the third area to the first area is less than 0.2.

公开(公告)号：US10930701B2

公开(公告)日：2021-02-23

申请号：US16390899

申请日：2019-04-22

Applicant: Epistar Corporation

Inventor： Chen Ou ,  Chun-Wei Chang ,  Chih-Wei Wu ,  Sheng-Chih Wang ,  Hsin-Mei Tsai ,  Chia-Chen Tsai ,  Chuan-Cheng Chang

IPC: H01L27/15 ,  H01L33/38 ,  H01L33/20 ,  H01L33/08

Abstract: A light-emitting device includes a first semiconductor layer having an uppermost surface and a bottommost surface; a first light-emitting structure and a second light-emitting structure formed on the same first semiconductor layer, wherein the first semiconductor layer is continuous; a first trench formed between the first and the second light-emitting structures; and a second electrode formed on the second semiconductor layer and including a second pad and a plurality of second extending parts extending from the second pad; wherein the second pad is between the first and the second light-emitting structures, and the plurality of second extending parts extends to the first and the second light-emitting structures, respectively; wherein the first trench passes through the uppermost surface but does not extend to the bottommost surface; wherein the first trench includes an equal width in a top view.

公开(公告)号：US10784427B2

公开(公告)日：2020-09-22

申请号：US16579218

申请日：2019-09-23

Applicant: EPISTAR CORPORATION

Inventor： Li-Ming Chang ,  Tzung-Shiun Yeh ,  Chien-Fu Shen ,  Yu-Rui Lin ,  Chen Ou ,  Hsin-Ying Wang ,  Hui-Chun Yeh

IPC: H01L33/62 ,  H01L33/20 ,  H01L33/06 ,  H01L33/30 ,  F21Y115/10 ,  H01L33/22 ,  H01L23/60 ,  F21K9/232 ,  H01L33/32 ,  H01L33/00 ,  H01L33/38 ,  H01L33/14

Abstract: A light-emitting device includes a first edge to a fourth edge; a semiconductor stack formed on a substrate, including a first semiconductor layer, a second semiconductor layer and an active layer; a first electrode formed on the first semiconductor layer, including a first pad electrode and a first finger electrode; and a second electrode formed on the second semiconductor layer, including a second pad electrode and a second finger electrode; wherein the first finger electrode is disposed at and along the first edge; and the first finger electrode includes a first overlapping portion overlapping the second finger electrode; the second finger electrode includes a second overlapping portion overlapping the first finger electrode and a non-overlapping portion that does not overlap the first finger electrode; and the second overlapping portion is not parallel with the first overlapping portion and the non-overlapping portion is not parallel with the first edge.

公开(公告)号：US10784404B2

公开(公告)日：2020-09-22

申请号：US16397775

申请日：2019-04-29

Applicant: EPISTAR CORPORATION

Inventor： Peng Ren Chen ,  Yu-Shan Chiu ,  Wen-Hsiang Lin ,  Shih-Wei Wang ,  Chen Ou

IPC: H01L33/22 ,  H01L33/12 ,  H01L33/06 ,  H01L33/02 ,  H01L33/00 ,  H01L33/32

Abstract: A light-emitting device, includes a substrate structure, including a base portion having a surface and a plurality of protrusions formed on the base portion; a buffer layer covering the plurality of protrusions and the surface; and III-V compound semiconductor layers formed on the buffer layer; wherein one of the plurality of protrusions has a height not greater than 1.5 μm; wherein the light-emitting device has a full width at half maximum (FWHM) of smaller than 250 arcsec in accordance with a (102) XRD rocking curve.

公开(公告)号：US09530940B2

公开(公告)日：2016-12-27

申请号：US14589683

申请日：2015-01-05

Applicant: EPISTAR CORPORATION

Inventor： Tzu-Chieh Hsu ,  Ching-San Tao ,  Chen Ou ,  Min-Hsun Hsieh ,  Chao-Hsing Chen

IPC: H01L33/42 ,  H01L33/22 ,  H01L33/10 ,  H01L33/38 ,  H01L33/40

CPC classification number: H01L33/105 ,  H01L33/10 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42

Abstract: A light-emitting device, comprises a light-emitting stacked layer comprising a first conductivity type semiconductor layer; a light-emitting layer formed on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer formed on the light-emitting layer and comprising a first plurality of cavities; a first planarization layer formed on a first part of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first planarization layer and on a second part of the second conductivity type semiconductor layer, the first transparent conductive oxide layer including a first portion in contact with the first planarization layer and including a second portion in contact with the upper surface of the second conductivity type semiconductor layer; a first electrode formed on the first portion; and a first reflective metal layer formed between the first transparent conductive oxide layer and the first electrode.

Abstract translation: 一种发光器件，包括：包含第一导电类型半导体层的发光层叠层; 形成在所述第一导电型半导体层上的发光层; 以及形成在所述发光层上并且包括第一多个空腔的第二导电类型半导体层; 形成在所述第二导电类型半导体层的第一部分上的第一平坦化层; 第一透明导电氧化物层，其形成在所述第一平坦化层上和所述第二导电类型半导体层的第二部分上，所述第一透明导电氧化物层包括与所述第一平坦化层接触的第一部分， 第二导电型半导体层的上表面; 形成在所述第一部分上的第一电极; 以及形成在第一透明导电氧化物层和第一电极之间的第一反射金属层。