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公开(公告)号:DE10118902A1
公开(公告)日:2002-03-14
申请号:DE10118902
申请日:2001-04-18
Applicant: IBM
Inventor: WALLOW THOMAS I , ALLEN ROBERT D , BROCK PHILLIP JOE , DI PIETRO RICHARD ANTHONY , ITO HIROSHI , TRUONG HOA DAO , VARANASI PUSHKARA RAO
Abstract: Acid-catalyzed positive photoresist compositions which are imageable with 193 nm radiation (and possibly other radiation) and are developable to form photoresist structures of improved development characteristics and improved etch resistance are enabled by the use of resist compositions containing cyclic olefin polymer having a cyclic olefin monomer having a lactone moiety, the monomer having no oxygen atoms intervening between the lactone moiety and a ring of the cyclic olefin. Preferred lactone moieties are spirolactones (having a 5 or 6 membered ring) directly to a cyclic olefin ring.
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公开(公告)号:DE69415577T2
公开(公告)日:1999-07-15
申请号:DE69415577
申请日:1994-03-17
Applicant: IBM
Inventor: BROCK PHILLIP JOE , FRANKLIN JACQLYNN ANN , SCHELLENBERG FRANKLIN MARK , TSAY JIUNN
Abstract: A plurality of noncontiguous polygonal regions of phase-shifting material have edges spaced apart less than the distance at which images of said edges would separate. The edges of the regions of phase-shifting material have differing arbitrarily selectable angular orientations (nonparallel as well as parallel) on a nonphase-shifting material. The noncontiguous phase-shifting regions may be arranged in a matrix of parallel columns and rows to facilitate fabrication and facilitate writing of the phase-shifting regions in any arbitrary pattern on an image plane. At least one of the phase-shifting regions constitutes a connective phase-shifting region with edges spaced from edges of adjacent ones of the phase-shifting regions to create a pattern with a continuous body of photoresist covering areas corresponding to the phase-shifting regions upon exposure of the mask. The phase-shifting regions may have different transmission coefficients to provide differing degrees of transparency or different degrees of phase shift to provide differing degrees of image intensity.
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公开(公告)号:DE112010004289B4
公开(公告)日:2016-03-24
申请号:DE112010004289
申请日:2010-09-14
Applicant: IBM
Inventor: SOORIYAKUMARAN RATNAM , ALLEN ROBERT DAVID , BROCK PHILLIP JOE , SWANSON SALLY ANN , TRUONG HOA , CHEN KUANG-JUNG , HUANG WU-SONG , FRIZ ALEXANDER
IPC: C09D143/04 , G03F7/00 , G03F7/075
Abstract: Beschichtungszusammensetzung, umfassend: ein Polymer, umfassendwobei R1 eine Silicium-enthaltende Einheit ist, R2 eine säurestabile Lactonfunktionalität ist und R3 eine säurelabile Lactonfunktionalität ist; X1, X2, X3 unabhängig H oder CH3 sind; und m, n und o von null verschiedene positive ganze Zahlen sind, die die Anzahl von Wiederholungseinheiten darstellen; und wobei die Silicium enthaltende Einheit (m) 20 bis 40 mol-Prozent, die säurestabile Lactonfunktionalität (n) 10 bis 40 mol-Prozent und die säurelabile Lactonfunktionalität (o) 20 bis 70 mol-Prozent des Polymers bildet; einen Fotosäuregenerator; und ein Lösungsmittel.
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公开(公告)号:GB2485470B
公开(公告)日:2014-05-07
申请号:GB201119373
申请日:2010-08-03
Applicant: IBM
Inventor: DIPIETRO RICHARD ANTHONY , ALLEN ROBERT DAVID , BROCK PHILLIP JOE , TRUONG HOA
IPC: G03F7/039
Abstract: Photoresist compositions include a blend of a phenolic polymer with a (meth)acrylate-based copolymer free of ether-containing and/or carboxylic acid-containing moieties. The (meth)acrylate copolymer includes a first monomer selected from the group consisting of an alkyl acrylate, a substituted alkyl acrylate, an alkyl (meth)acrylate, a substituted alkyl methacrylate and mixtures thereof, and a second monomer selected from the group consisting of an acrylate, a (meth)acrylate or a mixture thereof having an acid cleavable ester substituent; and a photoacid generator. Also disclosed are processes for generating a photoresist image on a substrate with the photoresist composition.
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公开(公告)号:DE112010004289T5
公开(公告)日:2013-03-07
申请号:DE112010004289
申请日:2010-09-14
Applicant: IBM
Inventor: SOORIYAKUMARAN RATNAM , ALLEN ROBERT DAVID , BROCK PHILLIP JOE , SWANSON SALLY ANN , TRUONG HOA , CHEN KUANG-JUNG , HUANG WU-SONG , FRIZ ALEXANDER
IPC: C09D143/04 , G03F7/00 , G03F7/075
Abstract: Beschichtungszusammensetzungen umfassen ein Polymer, umfassend (I), wobei R1 eine Silicium-enthaltende Einheit ist, R2 eine säurestabile Lactonfunktionalität ist und R3 eine säurelabile Lactonfunktionalität ist; X1, X2, X3 unabhängig H oder CH3 sind; und m und o von null verschiedene positive ganze Zahlen sind und n null oder eine positive ganze Zahl ist, die die Anzahl von Wiederholungseinheiten darstellen; einen Fotosäuregenerator; und ein Lösungsmittel. Ferner werden Verfahren zum Herstellen eines Musters in der Beschichtungszusammensetzung, welche dieses enthält, offenbart.
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公开(公告)号:GB2485470A
公开(公告)日:2012-05-16
申请号:GB201119373
申请日:2010-08-03
Applicant: IBM
Inventor: DIPIETRO RICHARD ANTHONY , ALLEN ROBERT DAVID , BROCK PHILLIP JOE , TRUONG HOA
IPC: G03F7/039
Abstract: Photoresist compositions include a blend of a phenolic polymer with a (meth)acrylate-based copolymer free of ether-containing and/or carboxylic acid-containing moieties. The (meth)acrylate copolymer includes a first monomer selected from the group consisting of an alkyl acrylate, a substituted alkyl acrylate, an alkyl (meth)acrylate, a substituted alkyl methacrylate and mixtures thereof, and a second monomer selected from the group consisting of an acrylate, a (meth)acrylate or a mixture thereof having an acid cleavable ester substituent; and a photoacid generator. Also disclosed are processes for generating a photoresist image on a substrate with the photoresist composition.
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公开(公告)号:DE602006015428D1
公开(公告)日:2010-08-26
申请号:DE602006015428
申请日:2006-02-22
Applicant: IBM
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公开(公告)号:DE69415577D1
公开(公告)日:1999-02-11
申请号:DE69415577
申请日:1994-03-17
Applicant: IBM
Inventor: BROCK PHILLIP JOE , FRANKLIN JACQLYNN ANN , SCHELLENBERG FRANKLIN MARK , TSAY JIUNN
Abstract: A plurality of noncontiguous polygonal regions of phase-shifting material have edges spaced apart less than the distance at which images of said edges would separate. The edges of the regions of phase-shifting material have differing arbitrarily selectable angular orientations (nonparallel as well as parallel) on a nonphase-shifting material. The noncontiguous phase-shifting regions may be arranged in a matrix of parallel columns and rows to facilitate fabrication and facilitate writing of the phase-shifting regions in any arbitrary pattern on an image plane. At least one of the phase-shifting regions constitutes a connective phase-shifting region with edges spaced from edges of adjacent ones of the phase-shifting regions to create a pattern with a continuous body of photoresist covering areas corresponding to the phase-shifting regions upon exposure of the mask. The phase-shifting regions may have different transmission coefficients to provide differing degrees of transparency or different degrees of phase shift to provide differing degrees of image intensity.
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