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    PROCESS FOR MAKING SUB-MICROMETRIC STRUCTURES AND USE OF THIS PROCESS IN MAKING DEEP DIELECTRIC ISOLATION REGIONS WITH A SUB-MICROMETRIC WIDTH IN A SEMICONDUCTOR BODY
    11.
    发明专利
    PROCESS FOR MAKING SUB-MICROMETRIC STRUCTURES AND USE OF THIS PROCESS IN MAKING DEEP DIELECTRIC ISOLATION REGIONS WITH A SUB-MICROMETRIC WIDTH IN A SEMICONDUCTOR BODY 未知

    公开(公告)号：DE3379363D1

    公开(公告)日：1989-04-13

    申请号：DE3379363

    申请日：1983-10-05

    Applicant: IBM DEUTSCHLAND ,  IBM

    Inventor： TRUMPP HANS-JOACHIM DR ,  GRESCHNER JOHANN DR

    IPC: H01L21/302 ,  C23F4/00 ,  H01L21/033 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/31 ,  H01L21/76 ,  H01L21/762

    Abstract: Following the method of making structures with dimensions in the submicrometer range, structures of a polymeric layer with horizontal and substantially vertical surfaces are first made on a substrate. Thereupon, a silicon nitride or oxide layer is plasma deposited. This layer is subjected to reactive ion etching methods in such a manner that its horizontal regions and the polymeric structures are removed, with merely the narrow regions of the silicon nitride or oxide layer that had originally been arranged adjacent the vertical surfaces of the polymeric structures remaining. In the case of positive lithography, the silicon nitride or oxide walls are converted into a mask with the same dimensions but consisting of a different mask material. In the case of negative lithography the silicon nitride or oxide walls are converted in a mask reversal process into openings in a mask material layer through which by means of reactive ion etching vertical trenches approximately 0.5 mu m deep can be etched in the silicon substrate. The trenches are filled by thermal oxidation or with a synthetic material as e.g. polyimide. The method as disclosed by the invention can also be applied to other processes than recessed isolation in semiconductor technology.

    13.
    发明专利
    未知

    公开(公告)号：DE4417132C2

    公开(公告)日：1996-08-14

    申请号：DE4417132

    申请日：1994-05-17

    Applicant: IBM

    Inventor： BAYER THOMAS ,  GRESCHNER JOHANN DR ,  SCHMID GERHARD DR ,  WOLF VOLKER DR

    IPC: G01B21/30 ,  B81B3/00 ,  G01D21/02 ,  G01H13/00 ,  G01L5/00 ,  G01N29/02 ,  G01N37/00 ,  G01P15/097 ,  G01P15/10 ,  G01Q60/30 ,  G01Q60/38 ,  G01Q70/10 ,  H03H9/24 ,  H03H9/50 ,  H03H9/56 ,  G01B5/28 ,  H01L49/00

    Abstract: PCT No. PCT/EP94/03257 Sec. 371 Date Nov. 15, 1996 Sec. 102(e) Date Nov. 15, 1996 PCT Filed Sep. 29, 1994 PCT Pub. No. WO95/31693 PCT Pub. Date Nov. 23, 1995The invention relates to a resonant sensor with a vibrating body (10) for the determination of at least two physical values characterised by the fact that the vibrating body (10) has at least two partial bodies (1, 2), the vibrating body as a whole (10) being appropriate for the determination of one of the two values and one of the partial bodies (1, 2) or a combination of several partial bodies is appropriate for the determination of the other of the two values. The individual partial bodies (1, 2) of the vibrating body can differ both in their geometric, dimensions and or in the materials of which they are composed. The measurement of the individual physical values takes place in a fundamental mode of the vibrating body as a whole (10) or of the relevant partial body (1, 2). If a resonant sensor of this type with a vibrating body in the form of a double transverse beam (10) and a fine tip (21) is used as a sensing probe in Scanning Kelvin Probe Force Microscopy, the surface potential of the surface (30) of the object under examination can be measured with a high degree of lateral resolution.

    14.
    发明专利
    未知

    公开(公告)号：DE69023478T2

    公开(公告)日：1996-06-20

    申请号：DE69023478

    申请日：1990-03-05

    Applicant: IBM

    Inventor： BARTHA JOHANN W DR ,  BAYER THOMAS ,  GRESCHNER JOHANN DR ,  KRAUS GEORG ,  WOLTER OLAF DR

    IPC: C01B31/36 ,  C23C16/32 ,  C23C16/50 ,  C23C16/52 ,  G01Q30/12

    Abstract: The present invention relates to a process for fabricating silicon carbide films and membranes with a predetermined stress via control of the deposition parameters which comprises the following steps: a) introducing a gas mixture of silane(SiH4)/helium and ethylene at flow rates of about 1000 sccm/min. and about 10 sccm/min. into a reaction chamber; b) reacting the silane and ethylene at a temperature >400 DEG C, and in a total pressure range of about 26.6 to 266 Pa, at an RF power

    15.
    发明专利
    未知

    公开(公告)号：DE3773904D1

    公开(公告)日：1991-11-21

    申请号：DE3773904

    申请日：1987-03-27

    Applicant: IBM DEUTSCHLAND

    Inventor： BAYER THOMAS ,  ELSAESSER MICHAEL ,  GRESCHNER JOHANN DR ,  SCHMID HEINRICH ,  STOEHR ROLAND R ,  WOLTER OLAF DR ,  WITTLINGER JUERGEN

    IPC: G01R31/26 ,  G01R1/073 ,  G01R31/28

    Abstract: The contact pin arrangement exhibits below an embedment of the contact pins (2) in a plastic compound, a stack (1, 1a) of perforated plates through which the contact pins extend. The stack of perforated plates consists of two types of perforated plates. The first one is formed by the lowermost perforated plates (1a). They exhibit round or square holes which ensure a perpendicular placement of the contact pins on the contact areas (4) of the test specimen (5). The perforated plates (1) of the second type exhibit nothing but elongated holes, rectangular, square, circular, elliptic or trapezoidal holes (3). Of in each case three perforated plates of the second type stacked on top of one another, the centre one is offset with respect to the other two which are aligned with one another, in such a manner that each contact pin is enclosed by a part of the lower edge of the hole of the top and a part of the upper edge of the hole of the centre and by a part of the lower edge of the hole of the centre and a part of the upper edge of the hole of the lower perforated plate. As a result, the contact pin can bend at the most to the part of the hole wall limiting its maximum bending with an axial load. This ensures a sufficiently low contact resistance between the contact pin and the contact area of the test specimen. The contact pins can be adapted to differences in the height of the contact areas of the test specimen due to unevennesses of the surface of the test specimen by a correspondingly selected number of perforated plates of the second type.

    Field emission component for array of emissive flat display screen
    16.
    发明专利
    Field emission component for array of emissive flat display screen 未知

    公开(公告)号：DE19800555A1

    公开(公告)日：1999-07-15

    申请号：DE19800555

    申请日：1998-01-09

    Applicant: IBM

    Inventor： BAYER THOMAS ,  GRESCHNER JOHANN DR ,  KALT SAMUEL ,  MEISSNER KLAUS ,  PAUL RUDOLF

    IPC: H01J9/02 ,  H01J1/304 ,  H01J3/02 ,  H01J29/04 ,  H01J31/12 ,  H01J1/30

    Abstract: A field emission component has several electron emission tips (2) arranged in each of several circular gate holes (5) formed through electrodes. An Independent claim is also included for the production of a field emission component by coating a single crystal silicon substrate with an insulating layer (3), applying a gate metal layer (4) and a photoresist layer on the insulating layer, forming a hole pattern in the resist layer by photolithography, transferring and opening the hole pattern into the gate metal layer by etching, producing tips (2) in the substrate in the hole regions by plasma etching and then applying a back face metallization onto the substrate.

    High viscosity adhesive for affixing probes onto boards
    17.
    发明专利
    High viscosity adhesive for affixing probes onto boards 未知

    公开(公告)号：DE19627442A1

    公开(公告)日：1998-01-22

    申请号：DE19627442

    申请日：1996-07-08

    Applicant: IBM

    Inventor： DRUSCHKE FRANK DR ,  ELSNER GERHARD DR ,  GRESCHNER JOHANN DR ,  STOEHR ROLAND

    IPC: G01R1/073 ,  F16B11/00 ,  G01R1/067

    Abstract: The adhesive joints (1) are made at the surface (2), or within the guide holes (5) of a board, and are at an arbitrary angle in a stack of boards (3) made of silicon, to fit wires, glass fibres or micro-mechanical components permanently. The upper part, or upper layers, of the boards can have elongated holes (5a) to provide an adhesive reservoir, allowing a high viscosity, thixotropic adhesive to be used. The remainder of the holes (5b) are cylindrical, and of smaller size. Hundreds of closely spaced wire contacts, of 25 to 100 micron diameter, can be glued into the boards as test probes for the buckling beam tests.

    18.
    发明专利
    未知

    公开(公告)号：DE19538792A1

    公开(公告)日：1997-04-24

    申请号：DE19538792

    申请日：1995-10-18

    Applicant: IBM

    Inventor： BAYER THOMAS ,  GRESCHNER JOHANN DR ,  MEISSNER KLAUS ,  STEINER WERNER ,  STOEHR ROLAND

    IPC: G01R1/073 ,  G01R31/28 ,  H01L21/66

    Abstract: The invention relates to a contact probe arrangement 1 for electrically connecting a test system with the circular contact pads 2 of a device to be tested 3. In order to achieve a low contact resistance the contact probes 4 are orthogonally pressed onto the contact pads 2, and for adjusting height differences in the contact pads 2 caused by an uneven surface of the device to be tested 3 they may bend out laterally into the provided areas 6a, 6b. The contact probes 4 are located in guide grooves 5. The guide grooves 5 as well as the areas 6a, 6b are provided in a plane parallel to the surface of a guide plate 7 and are covered by a protective plate. This assures a very dense contact probe array. Contact probe arrays of this type may be used, for example, for detecting opens and shorts in electrical circuit arrays of microelectronic compounds.

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