公开(公告)号：CA1266148A

公开(公告)日：1990-02-20

申请号：CA499386

申请日：1986-01-10

Applicant: IBM

Inventor： BABICH EDWARD D ,  HATZAKIS MICHAEL ,  JACOBS SCOTT L ,  PARASCZCAK JURI R ,  SHAW JANE M ,  WITMAN DAVID F

IPC: C08L61/00 ,  C08K5/549 ,  C08L33/00 ,  C08L33/02 ,  C08L61/04 ,  C08L61/06 ,  G03C1/00 ,  G03C1/72 ,  G03F7/004 ,  G03F7/038 ,  G03F7/26 ,  G03F7/38 ,  H01L21/027

Abstract: PLASMA-RESISTANT POLYMERIC MATERIAL, PREPARATION THEREOF, AND USE THEREOF Plasma-resistant polymeric materials are prepared by reacting a polymeric material containing reactive hydrogen functional groups with a multifunctional organometallic material containing at least two functional groups which are reactive with the reactive hydrogen functional groups of the polymeric material, such as hexamethylcyclotrisilazane.

公开(公告)号：FR2374668A1

公开(公告)日：1978-07-13

申请号：FR7733130

申请日：1977-10-27

Applicant: IBM

Inventor： HATZAKIS MICHAEL

IPC: H01L21/027 ,  G03F7/039 ,  G03F1/02 ,  G03C1/02

Abstract: Polymethyl methacrylate methacrylic acid (P[MMA/MAA]) copolymer powder is prebaked above 200 DEG C. The prebaked powder is dissolved in a suitable casting solvent. The insoluble material produced during prebaking is removed by filtration. Then the solution remaining is applied to a substrate, post-baked at a temperature less than or equal to the prebaking temperature to drive off the solvent, exposed to electron beam radiation, and developed in a developing solvent.

公开(公告)号：DE2606563A1

公开(公告)日：1976-09-16

申请号：DE2606563

申请日：1976-02-19

Applicant: IBM

Inventor： AHN KIE YEUNG ,  HATZAKIS MICHAEL ,  POWERS JOHN VINCENT

IPC: H05K3/00 ,  C23F1/00 ,  G11C11/14 ,  H01F10/00 ,  H01F10/12 ,  H01F10/13 ,  H01F41/14 ,  H01F41/34 ,  H05K3/24 ,  H01F10/02 ,  C25D7/00 ,  G11C19/08

公开(公告)号：CA893067A

公开(公告)日：1972-02-15

申请号：CA893067D

Applicant: IBM

Inventor： HALLER IVAN ,  HATZAKIS MICHAEL ,  SRINIVASAN RANGASWAMY

IPC: G03F7/039 ,  H01L21/00 ,  H01L23/29

公开(公告)号：DE1696489A1

公开(公告)日：1971-04-01

申请号：DEJ0035428

申请日：1968-01-05

Applicant: IBM

Inventor： HALLER IVAN ,  HATZAKIS MICHAEL ,  SRINIVASAN RANGASWAMY

IPC: G03F7/039 ,  H01L21/00 ,  H01L23/29 ,  G03C1/68

公开(公告)号：DE69106956D1

公开(公告)日：1995-03-09

申请号：DE69106956

申请日：1991-06-11

Applicant: IBM

Inventor： CUOMO JEROME J ,  GELORME JEFFREY D ,  HATZAKIS MICHAEL ,  LEWIS DAVID A ,  SHAW JANE M ,  WHITEHAIR STANLEY J

IPC: B01J19/12 ,  C08G73/10 ,  G01N22/00 ,  H01L21/312 ,  H05B6/68 ,  H05B6/80 ,  H05K1/03 ,  H05K3/46

Abstract: A method and apparatus are disclosed for conducting a physical process and a chemical reaction by exposing a material containing a volatile substance to microwave radiation where the morphology of said material will change when exposed to such radiation. The power of said radiation is adjusted over time as the morphology of the material changes to maximize the effect of the radiation in order to produce a product in a minimum amount of time that is substantially free of said volatile substance. The method and apparatus can also be used to conduct such a process or reaction with materials that do not contain a volatile material. In one embodiment a method and apparatus are disclosed for manufacturing a polyimide from a precursor in a solvent by exposing the precursor to microwave radiation in a tuneable microwave resonant cavity (2) that is tuned during imidization to achieve critical coupling of the system. Microwave power is controlled to remove the solvent and obtain the desired level of reaction.

公开(公告)号：DE3673219D1

公开(公告)日：1990-09-13

申请号：DE3673219

申请日：1986-03-11

Applicant: IBM

Inventor： BABICH EDWARD DARKO ,  HATZAKIS MICHAEL ,  LIUTKIS JOHN JOSEPH ,  PARASCZCAK JURI ROSTYSLAV ,  SHAW JANE MARGARET

IPC: G03C5/00 ,  C08F2/48 ,  C08F290/00 ,  C08F299/00 ,  C08F299/08 ,  C08K5/07 ,  C08L83/07 ,  G03F7/00 ,  G03F7/004 ,  G03F7/038 ,  G03F7/075 ,  H01L21/30

公开(公告)号：AU5260586A

公开(公告)日：1986-09-25

申请号：AU5260586

申请日：1986-01-22

Applicant: IBM

Inventor： BABICH EDWARD DARKO ,  HATZAKIS MICHAEL ,  JACOBS SCOTT LAURENCE ,  PARASCZCAK JURI ROSTYSLAV ,  SHAW JANE MARGARET ,  WITMAN DAVID FRANK

IPC: C08L61/00 ,  C08K5/549 ,  C08L33/00 ,  C08L33/02 ,  C08L61/04 ,  C08L61/06 ,  G03C1/00 ,  G03C1/72 ,  G03F7/004 ,  G03F7/038 ,  G03F7/26 ,  G03F7/38 ,  H01L21/027 ,  C08G8/28 ,  C08J3/24 ,  C08K5/54 ,  C08L61/10 ,  G03F7/02

公开(公告)号：DE3271595D1

公开(公告)日：1986-07-10

申请号：DE3271595

申请日：1982-12-20

Applicant: IBM

Inventor： HATZAKIS MICHAEL ,  LIUTKUS JOHN JOSEPH ,  PARASZCZAK JURIJ ROSTYSLAV ,  SHAW JANE MARGARET

IPC: G03F7/26 ,  C08F12/00 ,  C08F12/16 ,  G03F7/038 ,  H01L21/027 ,  G03F7/10

公开(公告)号：CA1123683A

公开(公告)日：1982-05-18

申请号：CA362153

申请日：1980-10-10

Applicant: IBM

Inventor： CANAVELLO BENJAMIN J ,  HATZAKIS MICHAEL

IPC: H01L21/027 ,  G03F7/40 ,  B05D1/32 ,  G03F7/16

Abstract: AN IMPROVED IMAGE HARDENING PROCESS Resist images are hardened so that they are flow resistant at elevated temperatures by coating the image with a layer of a porous metal or metal oxide. YO978-026