公开(公告)号：AU2002346512A1

公开(公告)日：2003-07-30

申请号：AU2002346512

申请日：2002-11-22

Applicant: IBM ,  INFINEON TECHNOLOGIES CORP

Inventor： KANE TERENCE ,  LUSTIG NAFTALI E ,  MCDONALD ANN ,  MCGAHAY VINCENT ,  SEO SOON-CHEON ,  STAMPER ANTHONY K ,  WANG YUN YU ,  KALTALIOGLU ERDEM ,  CHEN TZE-CHIANG ,  ENGEL BRETT H ,  FITZSIMMONS JOHN A

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/44 ,  H01L29/40 ,  H01L23/48 ,  H01L23/52

Abstract: An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a bilayer diffusion barrier or cap, where the first cap layer is formed of a dielectric material preferably deposited by a high density plasma chemical vapor deposition (HDP CVD) process, and the second cap layer is formed of a dielectric material preferably deposited by a plasma-enhanced chemical vapor deposition (PE CVD) process. A method for forming the BEOL metallization structure is also disclosed. The invention is particularly useful in interconnect structure comprising low-k dielectric material for the inter-layer dielectric (ILD) and copper for the conductors.

公开(公告)号：GB2523948A

公开(公告)日：2015-09-09

申请号：GB201511991

申请日：2013-12-09

Applicant: IBM

Inventor： BAO JUNJING ,  BONILLA GRISELDA ,  FILIPPI RONALD G ,  LUSTIG NAFTALI E ,  SIMON ANDREW H ,  CHOI SAMUEL S

IPC: H01L23/532 ,  H01L21/768

Abstract: A graphene and metal interconnect structure and methods of making the same. A multiple layer graphene structure may be grown using a graphene catalyst. The graphene forms an electrical connection 30 between two or more vias (16,36) or components 20, or a combination of vias and components. A via includes a fill metal, with at least a portion of the fill metal 36 being surrounded by a barrier metal 38. A component may be a routing track, a clock signal source, a power source, an electromagnetic signal source, a ground terminal, a transistor, a macrocell, or a combination thereof. The graphene is grown, using a graphene catalyst, from both solid and liquid carbon sources using chemical vapor deposition (CVD) at a temperature between 300°C - 400°C. The graphene catalyst can be an elemental form of, or alloy including, nickel, palladium, ruthenium, iridium or copper.

公开(公告)号：DE112011103146B4

公开(公告)日：2015-02-26

申请号：DE112011103146

申请日：2011-08-10

Applicant: IBM

Inventor： BAO JUNJING ,  LUSTIG NAFTALI E ,  CHENG TIEN-JEN J

IPC: H01L23/532 ,  H01L21/768

Abstract: Mehrschichtige Halbleiterstruktur, die aufweist: eine dielektrische Ultra-low-k(ULK)-Schicht (100), wobei die dielektrische ULK-Schicht eine Vielzahl darin gebildeter Gräben (180) und Durchgangskontakte (150) aufweist, die mit Metall gefüllt sind; eine Deckschicht (130), worauf die dielektrische ULK-Schicht (100) angeordnet ist; und Nanopartikel (120), die eine Monoschicht an einer Grenzfläche zwischen der dielektrischen ULK-Schicht und der Deckschicht bilden.

公开(公告)号：GB2497485B

公开(公告)日：2014-12-24

申请号：GB201305611

申请日：2011-08-10

Applicant: IBM

Inventor： BAO JUNJING ,  LUSTIG NAFTALI E ,  CHENG TIEN-JEN J

IPC: H01L21/768 ,  H01L21/02 ,  H01L23/532

Abstract: In a BEOL process, UV radiation is used in a curing process of ultra low-k (ULK) dielectrics. This radiation penetrates through the ULK material and reaches the cap film underneath it. The interaction between the UV light and the film leads to a change the properties of the cap film. Of particular concern is the change in the stress state of the cap from compressive to tensile stress. This leads to a weaker dielectric-cap interface and mechanical failure of the ULK film. A layer of nanoparticles is inserted between the cap and the ULK film. The nanoparticles absorb the UV light before it can damage the cap film, thus maintaining the mechanical integrity of the ULK dielectric.

公开(公告)号：GB2512009A

公开(公告)日：2014-09-17

申请号：GB201412533

申请日：2013-01-10

Applicant: IBM

Inventor： BAO JUNJING ,  BONILLA GRISELDA ,  CHANDA KAUSHIK ,  CHOI SAMUEL S ,  FILIPPI RONALD G ,  GRUNOW STEPHAN ,  LUSTIG NAFTALI E ,  MOY DAN ,  SIMON ANDREW H

IPC: H01L21/768 ,  H01L23/525

Abstract: A BEOL e-fuse is disclosed which reliably blows in the via and can be formed even in the tightest pitch BEOL layers. The BEOL e-fuse can be formed utilizing a line first dual damascene process to create a sub-lithographic via to be the programmable link of the e-fuse. The sub-lithographic via can be patterned using standard lithography and the cross section of the via can be tuned to match the target programming current.

公开(公告)号：GB2497485A

公开(公告)日：2013-06-12

申请号：GB201305611

申请日：2011-08-10

Applicant: IBM

Inventor： BAO JUNJING ,  LUSTIG NAFTALI E ,  CHENG TIEN-JEN J

IPC: H01L21/768 ,  H01L21/02 ,  H01L23/532

Abstract: In a BEOL process, UV radiation is used in a curing process of ultra low-k (ULK) dielectrics 100. This radiation penetrates through the ULK material and reaches the cap film underneath it. The interaction between the UV light and the film leads to a change the properties of the cap film. Of particular concern is the change in the stress state of the cap from compressive to tensile stress. This leads to a weaker dielectric-cap interface and mechanical failure of the ULK film. A layer of nanoparticles 120 is inserted between the cap 130 and the ULK film. The nanoparticles absorb the UV light before it can damage the cap film, thus maintaining the mechanical integrity of the ULK dielectric.

公开(公告)号：MY134796A

公开(公告)日：2007-12-31

申请号：MYPI20030029

申请日：2003-01-06

Applicant: IBM ,  INFINEON TECHNOLOGIES CORP

Inventor： CHEN TZE-CHIANG ,  WANG YUN YU ,  KALTALIOGLU ERDEM ,  ENGEL BRETT H ,  FITZSIMMONS JOHN A ,  KANE TERENCE ,  LUSTIG NAFTALI E ,  MCDONALD ANN ,  MCGAHAY VINCENT ,  SEO SOON-CHEON ,  STAMPER ANTHONY K

IPC: H01L21/44 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532

Abstract: AN ADVANCED BACK-END-OF-LINE (BEOL) METALLIZATION STRUCTURE IS DISCLOSED. THE STRUCTURE INCLUDES A BILAYER DIFFUSION BARRIER OR CAP, WHERE THE FIRST CAP LAYER (116, 123) IS FORMED OF A DIELECTRIC MATERIAL PREFERABLY DEPOSITED BY A HIGH DENSITY PLASMA CHEMICAL VAPOR DEPOSITION (HDP CVD) PROCESS, AND THE SECOND CAP LAYER (117, 124) IS FORMED OF A DIELECTRIC MATERIAL PREFERABLY DEPOSITED BY A PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (PE CVD) PROCESS. A METHOD FOR FORMING THE BEOL METALLIZATION STRUCTURE IS ALSO DISCLOSED. THE INVENTION IS PARTICULARLY USEFUL IN INTERCONNECT STRUCTURES COMPRISING LOW-K DIELECTRIC MATERIAL FOR THE INTER-LAYER DIELECTRIC (ILD) AND COPPER FOR THE CONDUCTORS.

公开(公告)号：AU2002360420A1

公开(公告)日：2003-07-30

申请号：AU2002360420

申请日：2002-11-22

Applicant: IBM

Inventor： WANG YUN YU ,  GATES STEPHEN ,  AGARWALA BIRENDRA N ,  FITZSIMMONS JOHN A ,  LEE JIA ,  LUSTIG NAFTALI E

IPC: H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L23/532 ,  H01L23/48 ,  H01L21/469 ,  H01L21/4763

Abstract: An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a diffusion barrier or cap layer having a low dielectric constant (low-k). The cap layer is formed of amorphous nitrogenated hydrogenated silicon cabride, and has a dielectric constant (k) of less than about 5. A method for forming the BEOL metallization structure is also disclosed, where the cap layer is deposited using a plasma-enhanced chemical vapor deposition (PE CVD) process. The invention is particularly useful in interconnect structure comprising low-k dielectric material for the inter-layer dielectric (ILD) and copper for the conductors.