METHOD OF TUNING THERMAL CONDUCTIVITY OF ELECTROSTATIC CHUCK SUPPORT ASSEMPLY
    11.
    发明申请
    METHOD OF TUNING THERMAL CONDUCTIVITY OF ELECTROSTATIC CHUCK SUPPORT ASSEMPLY 审中-公开
    调节静电卡盘支撑组件热导率的方法

    公开(公告)号:WO2008027305A3

    公开(公告)日:2008-05-02

    申请号:PCT/US2007018711

    申请日:2007-08-24

    CPC classification number: H01L21/67248 H01L21/6831 Y10T279/23

    Abstract: A method of tuning the thermal conductivity of an electrostatic chuck (ESC) support assembly comprises measuring the temperature at a plurality of sites on a support assembly surface in which each site is associated with a given cell, determining from the measurements any fractional reduction in area suggested for each cell, and removing material from the support assembly surface within each cell in accordance with the suggested fractional reduction in order to decrease thermal conductivity in that cell. The material removal can result in an improvement to the equilibrium temperature uniformity of the electrostatic chuck support assembly at the chuck surface of an electrostatic chuck bonded to the support assembly surface, or can result in an equilibrium temperature profile of the ESC support assembly which approaches or achieves a target equilibrium temperature profile. Thermal conductivity tuning can thus take place by a method comprising defining a cell structure, determining the target areal density of each cell and removing a fractional area of material to achieve the target areal density for that cell. Material removal can be effected by drilling, routing, laser machining or grit blast machining on an X-Y table.

    Abstract translation: 调节静电吸盘(ESC)支撑组件的热导率的方法包括测量支撑组件表面上的多个位置处的温度,其中每个位置与给定的电池相关联,根据测量结果确定区域中的任何分数减少 建议用于每个电池,并且根据建议的分数减少从每个电池内的支撑组件表面移除材料以降低该电池中的热导率。 材料去除可导致静电卡盘支撑组件在与支撑组件表面结合的静电卡盘的卡盘表面处的平衡温度均匀性的改善,或者可导致ESC支撑组件的平衡温度分布, 达到目标平衡温度曲线。 因此,热导率调整可以通过包括以下方法进行:限定单元结构;确定每个单元的目标面密度;以及去除材料的分数区域以实现该单元的目标面密度。 材料去除可以通过在X-Y台上进行钻孔,布线,激光加工或喷砂加工来实现。

    HEATING PLATE WITH DIODE PLANAR HEATER ZONES FOR SEMICONDUCTOR PROCESSING

    公开(公告)号:SG11201400620YA

    公开(公告)日:2014-04-28

    申请号:SG11201400620Y

    申请日:2012-09-17

    Applicant: LAM RES CORP

    Abstract: A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar heater zone uses at least one diode as a heater element. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the heating plate include bonding together ceramic or polymer sheets having planar heater zones, power supply lines, power return lines and vias.

    QUARTZ GUARD RING CENTERING FEATURES

    公开(公告)号:SG175649A1

    公开(公告)日:2011-11-28

    申请号:SG2011075975

    申请日:2007-10-10

    Applicant: LAM RES CORP

    Abstract: An electrode assembly and method of centering an outer ring around an electrode assembly in a plasma reaction chamber used in semiconductor substrate processing. The method includes positioning the outer ring around an outer surface of a backing member of the electrode assembly, and inserting at least one centering element between the outer ring and the backing member. The centering element can be a plurality of spring-loaded centering elements received in a cavity on the outer surface of the backing member, the centering elements having a first end adapted to contact the outer ring and a second end adapted to receive a spring. The outer ring surrounds an outer surface of the backing member, such that the plurality of spring-loaded centering elements are positioned between the outer surface of the backing member and an inner surface of the outer ring.Figure 7

    APPARATUS FOR SPATIAL AND TEMPORAL CONTROL OF TEMPERATURE ON A SUBSTRATE

    公开(公告)号:SG158164A1

    公开(公告)日:2010-01-29

    申请号:SG2009085333

    申请日:2005-12-13

    Applicant: LAM RES CORP

    Abstract: An apparatus for control of a temperature of a substrate has a temperaturecontrolled base, a heater, a metal plate, a layer of dielectric material. The heater is thermally coupled to an underside of the metal plate while being electrically insulated from the metal plate. A first layer of adhesive material bonds the metal plate and the heater to the top surface of the temperature controlled base. This adhesive layer is mechanically flexible, and possesses physical properties designed to balance the thermal energy of the heaters and an external process to provide a desired temperature pattern on the surface of the apparatus. A second layer of adhesive material bonds the layer of dielectric material to a top surface of the metal plate. This second adhesive layer possesses physical properties designed to transfer the desired temperature pattern to the surface of the apparatus. The layer of dielectric material forms an electrostatic clamping mechanism and supports the substrate.

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