CLEANING SOLUTIONS FOR SEMICONDUCTOR SUBSTRATES AFTER POLISHING OF COPPER FILM

    公开(公告)号:MY135738A

    公开(公告)日:2008-06-30

    申请号:MYPI20001965

    申请日:2000-05-05

    Applicant: LAM RES CORP

    Abstract: A CLEANING SOLUTION, METHOD, AND APPARATUS FOR CLEANING SEMICONDUCTOR SUBSTRATES AFTER CHEMICAL MECHANICAL POLISHING OF COPPER FILMS IS DESCRIBED. THE PRESENT INVENTION INCLUDES A CLEANING SOLUTION WHICH COMBINES DEIONIZED WATER, AN ORGANIC COMPOUND, AND AN AMMONIUM COMPOUND IN AN ACIDIC PH ENVIRONMENT FOR CLEANING THE SURFACE OF A SEMICONDUCTOR SUBSTRATE AFTER POLISHING A COPPER LAYER. SUCH METHODS OF CLEANING SEMICONDUCTOR SUBSTRATES AFTER COPPER CMP ALLEVIATE THE PROBLEMS ASSOCIATED WITH BRUSH LOADING AND SURFACE AND SUBSURFACE CONTAMINATION.(FIG 3)

    APPARATUSES AND METHODS FOR CLEANING A SUBSTRATE

    公开(公告)号:MY144394A

    公开(公告)日:2011-09-15

    申请号:MYPI20045300

    申请日:2004-12-22

    Applicant: LAM RES CORP

    Abstract: AN APPARATUS FOR USE IN PROCESSING A SUBSTRATE (216) INCLUDES A BRUSH ENCLOSURE (212) EXTENDING OVER A LENGTH (218). THE BRUSH ENCLOSURE (212) IS CONFIGURED TO BE DISPOSED OVER A SURFACE OF THE SUBSTRATE AND HAS AN OPEN REGION (222) THAT IS CONFIGURED TO BE DISPOSED IN PROXIMITY TO THE SUBSTRATE. THE OPEN REGION EXTENDS OVER THE LENGTH OF THE BRUSH ENCLOSURE AND ENABLES FOAM (410) FROM WITHIN THE BRUSH ENCLOSURE TO CONTACT THE SURFACE OF THE SUBSTRATE. A SUBSTRATE CLEANING SYSTEM AND METHOD FOR CLEANING A SUBSTRATE ARE ALSO DESCRIBED.

    METHOD AND APPARATUS FOR CLEANING SEMICONDUCTOR WAFERS USING COMPRESSED AND/OR PRESSURIZED FOAMS, BUBBLES AND/OR LIQUIDS

    公开(公告)号:MY140370A

    公开(公告)日:2009-12-31

    申请号:MYPI20045251

    申请日:2004-12-20

    Applicant: LAM RES CORP

    Abstract: An apparatus and method are disclosed in which a semiconductor substrate having a surface containing contaminants is cleaned or otherwise subjected to chemical treatment using a foam. The semiconductor wafer is supported either on a stiff support (or a layer of foam) and foam is provided on the opposite surface of the semiconductor wafer while the semiconductor wafer is supported. The foam contacting the semiconductor wafer is pressurized using a form to produce a jammed foam. Relative movement between the form and the semiconductor wafer. such as oscillation parallel and/or perpendicular to the top surface of the semiconductor wafer. is then induced while the jammed foam is in contact with the semiconductor wafer to remove the undesired contaminants and/or otherwise chemically treat the surface of the semiconductor wafer using the foam.

    METHOD AND APPARATUS FOR CLEANING A SUBSTRATE USING NON-NEWTONIAN FLUIDS

    公开(公告)号:SG149849A1

    公开(公告)日:2009-02-27

    申请号:SG2009003047

    申请日:2006-06-14

    Applicant: LAM RES CORP

    Abstract: METHOD AND APPARATUS FOR CLEANING A SUBSTRATE USING NON-NEWTONIAN FLUIDS A method for cleaning a substrate is provided. In this method, a flow of non- Newtonian fluid is provided where at least a portion of the flow exhibits plug flow. To remove particles from a surface of the substrate, the surface of the substrate is placed in contact with the portion of the flow that exhibits plug flow such that the portion of the flow exhibiting plug flow moves over the surface of the substrate. Additional methods and apparatuses for cleaning a substrate also are described.

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