公开(公告)号：AU6287899A

公开(公告)日：2000-04-26

申请号：AU6287899

申请日：1999-10-05

Applicant: LAM RES CORP

Inventor： SCHOEPP ALAN M ,  KNOP ROBERT E ,  OLSON CHRISTOPHER H ,  BARNES MICHAEL S ,  NGO TUAN M

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  H02N13/00 ,  H01L21/68 ,  H01L21/00

Abstract: Disclosed is a method and device for compensating a bias voltage on a wafer disposed over an electrostatic chuck in a processing chamber of a plasma processing system. The plasma processing system includes an electrostatic and RF power supplies that are coupled to the electrostatic chuck. The bias compensation device includes a voltage converter, a storage unit, and a voltage adjusting circuitry. The voltage converter is coupled to the electrostatic chuck for detecting a voltage Vpp of the electrostatic chuck. The voltage converter converts the detected voltage to a lower voltage Vref. The storage unit stores a predetermined slope and a predetermined offset of a calibration curve, which is derived by fitting a plurality of wafer bias voltages as a function of electrostatic chuck voltages.

公开(公告)号：SG10201600021UA

公开(公告)日：2016-08-30

申请号：SG10201600021U

申请日：2016-01-04

Applicant: LAM RES CORP

Inventor： LILL THORSTEN ,  BERRY III IVAN L ,  SHEN MEIHUA ,  SCHOEPP ALAN M ,  HEMKER DAVID J

公开(公告)号：SG2014013858A

公开(公告)日：2014-07-30

申请号：SG2014013858

申请日：2008-01-24

Applicant: LAM RES CORP

Inventor： BAILEY ANDREW D III ,  SCHOEPP ALAN M ,  SEXTON GREGORY ,  KIM YUNSANG ,  KENNEDY WILLIAM S

Abstract: A device for cleaning a bevel edge of a semiconductor substrate. The device includes: a lower support having a cylindrical top portion; a lower plasma-exclusion-zone (PEZ) ring surrounding the outer edge of the top portion and adapted to support the substrate; an upper dielectric component opposing the lower support and having a cylindrical bottom portion; an upper PEZ ring surrounding the outer edge of the bottom portion and opposing the lower PEZ ring; and at least one radiofrequency (RF) power source operative to energize process gas into plasma in an annular space defined by the upper and lower PEZ rings, wherein the annular space encloses the bevel edge.

公开(公告)号：ES2184469T3

公开(公告)日：2003-04-01

申请号：ES99930547

申请日：1999-06-22

Applicant: LAM RES CORP

Inventor： HOWALD ARTHUR M ,  CHEN ANTHONY L ,  SCHOEPP ALAN M

IPC: H05H1/46 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065

Abstract: A window of a plasma processing chamber. The window includes a first dielectric portion having a first electrical thickness and a first resistivity to an etching plasma that is formed within the plasma processing chamber. There is further included a second dielectric portion disposed within the first dielectric portion. The second dielectric portion has a second electrical thickness that is less than the first electrical thickness. The second dielectric portion is formed of a substantially transparent material and has a second resistivity to the etching plasma. The second resistivity is higher than the first resistivity.

公开(公告)号：AU1490301A

公开(公告)日：2001-05-30

申请号：AU1490301

申请日：2000-11-14

Applicant: LAM RES CORP

Inventor： BAILEY ANDREW D III ,  SCHOEPP ALAN M ,  SMITH MICHAEL G R ,  KUTHI ANDRAS

IPC: H05H1/46 ,  H01J37/32 ,  H01L21/3065

Abstract: A plasma processing system that includes a temperature management system and method that can achieve very accurate temperature control over a plasma processing apparatus is disclosed. In one embodiment, the temperature management system and method operate to achieve tight temperature control over surfaces of the plasma processing apparatus which interact with the plasma during fabrication of semiconductor devices. The tight temperature control offered by the invention can be implemented with combination heating and cooling blocks such that both heating and cooling can be provided from the same thermal interface.

公开(公告)号：SG2013075718A

公开(公告)日：2014-05-29

申请号：SG2013075718

申请日：2013-10-07

Applicant: LAM RES CORP

Inventor： SIRARD STEPHEN M ,  HYMES DIANE ,  SCHOEPP ALAN M ,  LIMARY RATCHANA

Abstract: An apparatus for delamination drying a substrate is provided. A chamber for receiving a substrate is provided. A chuck supports and clamps the substrate within the chamber. A temperature controller controls the temperature of the substrate and is able to cool the substrate. A vacuum pump is in fluid connection with the chamber. A tilting mechanism is able to tilt the chuck at least 90 degrees.

公开(公告)号：DE60041350D1

公开(公告)日：2009-02-26

申请号：DE60041350

申请日：2000-11-14

Applicant: LAM RES CORP

Inventor： BAILEY ANDREW D ,  SCHOEPP ALAN M ,  BRIGHT NICOLAS

IPC: H01J37/32 ,  H05H1/46 ,  C23C16/507 ,  H01L21/205 ,  H01L21/3065

Abstract: A plasma confinement arrangement for controlling the volume of a plasma while processing a substrate inside a process chamber using a plasma enhanced process is disclosed. The arrangement includes a first magnetic bucket having a plurality of first magnetic elements. The first magnetic elements being configured for producing a first magnetic field inside the process chamber. The arrangement further includes a second magnetic bucket having a plurality of second magnetic elements. The second magnetic elements being configured for producing a second magnetic field inside the process chamber. The second magnetic field being configured to combine with the first magnetic field to produce a resultant magnetic field between the first magnetic bucket and the second magnetic bucket. The resultant magnetic field being configured to permit by-product gas from the processing to pass through while substantially confining the plasma within a volume defined at least by the process chamber and the resultant magnetic field.

公开(公告)号：DE60040611D1

公开(公告)日：2008-12-04

申请号：DE60040611

申请日：2000-11-14

Applicant: LAM RES CORP

Inventor： BAILEY ANDREW D ,  SCHOEPP ALAN M ,  HEMKER DAVID J ,  WILCOXSON MARK H

IPC: H01J37/32 ,  H05H1/46 ,  H01L21/3065

Abstract: A plasma processing system that includes a plasma processing chamber that provides enhanced control over an etch process is disclosed. The plasma processing chamber is connected to a gas flow system. The gas flow system can be employed to control the release of gases into different regions within the plasma processing chamber. In addition, the volume of the released gas, e.g., the flow rate of the gas, can be adjusted by a gas flow control mechanism. In this manner, both the position and the amount of the gas that is delivered to the plasma processing chamber can be controlled. The ability to adjust the position and the amount of gas that is released into the plasma processing chamber provides for a better control over the distribution of the neutral components. This in turn enhances control over the etching process.

公开(公告)号：AU2002322547A1

公开(公告)日：2003-02-17

申请号：AU2002322547

申请日：2002-07-18

Applicant: LAM RES CORP

Inventor： SCHOEPP ALAN M ,  WILCOXSON MARK H ,  BAILEY III ANDREW D ,  SMITH MICHAEL G R ,  KUTHI ANDRAS

IPC: H05H1/46 ,  H01J37/32 ,  H01L21/3065

Abstract: An antenna arrangement for generating an electric field inside a process chamber is provided. Generally, the antenna arrangement comprises a first loop disposed around an antenna axis. The first loop comprises a first turn with a first turn gap; a second turn with a second turn gap, where the second turn is concentric and coplanar with the first turn and spaced apart from the first turn, and where the antenna axis passes through the center of the first turn and second turn; and a first turn-second turn connector electrically connected between a second end of the first turn and a first end of the second turn comprising a spanning section between and coplanar with the first turn and the second turn and which spans the first turn gap and the second turn gap.

公开(公告)号：AU1767401A

公开(公告)日：2001-05-30

申请号：AU1767401

申请日：2000-11-14

Applicant: LAM RES CORP

Inventor： BAILEY ANDREW D III ,  SCHOEPP ALAN M ,  HEMKER DAVID J ,  WILCOXSON MARK H

IPC: H05H1/46 ,  H01J37/32 ,  H01L21/3065

Abstract: A plasma processing system that includes a plasma processing chamber that provides enhanced control over an etch process is disclosed. The plasma processing chamber is connected to a gas flow system. The gas flow system can be employed to control the release of gases into different regions within the plasma processing chamber. In addition, the volume of the released gas, e.g., the flow rate of the gas, can be adjusted by a gas flow control mechanism. In this manner, both the position and the amount of the gas that is delivered to the plasma processing chamber can be controlled. The ability to adjust the position and the amount of gas that is released into the plasma processing chamber provides for a better control over the distribution of the neutral components. This in turn enhances control over the etching process.