公开(公告)号：DE10152922A1

公开(公告)日：2003-05-15

申请号：DE10152922

申请日：2001-10-26

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： STRAUSS UWE ,  WEIMAR ANDREAS

IPC: H01L33/38 ,  H01L33/44 ,  H01S5/323 ,  H01L33/00

Abstract: The invention concerns a nitride-based semiconductor component comprising a semiconductor body (1) whereon is deposited a contact metallization (4). The semiconductor body (1) is provided with a protective layer which optionally also covers partial zones of the contact metallization (4) and has a plurality of mutually juxtaposed recesses (2).

公开(公告)号：CA2360502A1

公开(公告)日：2001-05-31

申请号：CA2360502

申请日：2000-11-20

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： HAHN BERTHOLD ,  EISERT DOMINIK ,  BADER STEFAN ,  BOLAY HELMUT ,  ZEHNDER ULRICH ,  LELL ALFRED ,  STRAUSS UWE ,  LUGAUER HANS-JURGEN ,  WEIMAR ANDREAS ,  HARLE VOLKER ,  VOLKL JOHANNES

IPC: H01L33/06 ,  H01L33/32 ,  H01S5/34 ,  H01S5/343 ,  H01L33/00

Abstract: The invention relates to an optical semiconductor device comprising a multip le quantum well structure, in which well layers and barrier layers consisting o f different types of semiconductor layers are stacked alternately on top of on e another. The invention is characterised in that the well layers (6a) have a first composition, based on a nitride semiconductor material with a first electron energy and the barrier layers (6b) have a second composition based on a nitride semiconductor material with a higher electron energy in relation t o the first electron energy. An active radiative quantum well layer (6c) is located downstream of said layers in the epitaxial direction and the essentially non-radiative well layers (6a) positioned upstream, together wit h the barrier layers (6b) form a superlattice for said active quantum well lay er.

公开(公告)号：DE102009051748A1

公开(公告)日：2011-05-05

申请号：DE102009051748

申请日：2009-11-03

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： WEIMAR ANDREAS

IPC: H01L33/50

Abstract: Es wird ein Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterbauelements mit den folgenden Schritten angegeben: - Bereitstellen eines Leuchtdiodenchips (1) mit einer Strahlungsaustrittsfläche (1a), - Aufbringen eines Konversionselements (2) auf zumindest Teile der Strahlungsaustrittsfläche (1a), - zumindest stellenweises Abtragen des Konversionselements (2) mittels Laserstrahlung (41).

公开(公告)号：DE102008034708A1

公开(公告)日：2010-02-04

申请号：DE102008034708

申请日：2008-07-25

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： ENGL KARL ,  WEIMAR ANDREAS ,  SABATHIL MATTHIAS

IPC: H01L33/60

Abstract: The chip (1) has an active zone (12) formed between two semiconductor regions (11, 13) for generating electromagnetic radiation. Two connecting layers (2, 3) are arranged on a side of the active zone opposite to one of the semiconductor regions. An opening (5) extends from one of the semiconductor regions through the active zone towards the other semiconductor region. A reflective layer (4) partially covers side surfaces (17) of a semiconductor layer sequence (10). A set of recesses (18) extends along sides of the semiconductor layer sequence. An independent claim is also included for a method for production of an optoelectronic semiconductor chip.

公开(公告)号：DE10218498B4

公开(公告)日：2007-02-22

申请号：DE10218498

申请日：2002-04-25

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： BADER STEFAN ,  HAERLE VOLKER ,  MILLER STEPHAN ,  WEIMAR ANDREAS ,  LELL ALFRED

IPC: H01L21/205 ,  H01L21/033 ,  H01L21/20 ,  H01L21/762 ,  H01L21/78 ,  H01L33/00

公开(公告)号：DE102005025416A1

公开(公告)日：2006-12-14

申请号：DE102005025416

申请日：2005-06-02

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： BAUR JOHANNES ,  HAERLE VOLKER ,  OBERSCHMID RAIMUND ,  HAHN BERTHOLD ,  WEIMAR ANDREAS

IPC: H01L33/38

公开(公告)号：DE102005003460A1

公开(公告)日：2005-10-13

申请号：DE102005003460

申请日：2005-01-25

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： WEIMAR ANDREAS ,  HAHN BERTHOLD ,  HAERLE VOLKER ,  BAUR JOHANNES ,  OBERSCHMID RAIMUND

IPC: H01L33/14 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/00

Abstract: The device has an active layer (7) that emits electromagnetic radiation (19) in a main radiation direction (15), a current dispersion layer (9) of a first nitride compound semiconductor material, a main surface (14) for coupling out the radiation emitted in the main radiation direction and a first contact layer (11,12) arranged on the main surface. The transverse conductivity of the current dispersion layer is increased by forming a two-dimensional electron or hole gas.

公开(公告)号：DE10147791A1

公开(公告)日：2003-04-10

申请号：DE10147791

申请日：2001-09-27

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： HAERLE VOLKER ,  LELL ALFRED ,  WEIMAR ANDREAS

IPC: H01S5/343 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S5/30 ,  H01L33/00

Abstract: The invention relates to a method for the production of a nitride compound semiconductor based semiconductor element. In a first step of the inventive method, a semiconductor body (1) containing at least one nitride compound semiconductor is provided. A metal layer is applied to the surface (6) of the semiconductor body (1) in a second step. In a third step, the semiconductor body (1) is subsequently structured, whereby part of the metal layer (7) and parts of the semiconductor body (1) located thereunder are removed.

公开(公告)号：DE10060439A1

公开(公告)日：2002-06-13

申请号：DE10060439

申请日：2000-12-05

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： ARNOLD CLAUDIA ,  BRUEDERL GEORG ,  HAERLE VOLKER ,  LELL ALFRED ,  WEIMAR ANDREAS

IPC: H01L21/285 ,  H01L29/20 ,  H01L29/45 ,  H01L33/32 ,  H01L33/40 ,  H01L33/00

Abstract: Contact metallization contains copper distributed in a partial volume. An Independent claim is also included for the production of a contact metallization comprising applying a contact metallization containing copper on a p-conducting region (2) of a GaN-based semiconductor structure (1); and curing the metallization at elevated temperature so that copper is distributed in partial volume regions of the contact metallization. Preferred Features: Copper is uniformly distributed in the whole of the metallization. The metallization contains a layer of nickel, gold, platinum, palladium, tantalum, titanium, chromium, tungsten, indium, magnesium or silicon. An adhesion layer (4) containing titanium or chromium is formed on the side of the metallization facing the semiconductor.

公开(公告)号：DE102017108422A1

公开(公告)日：2018-10-25

申请号：DE102017108422

申请日：2017-04-20

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： WENDT MATHIAS ,  WEIMAR ANDREAS

IPC: H01L21/60 ,  H01L23/482 ,  H01L33/62

Abstract: Es wird ein Verfahren zum Befestigen eines Halbleiterchips auf einem Leiterrahmen angegeben. Das Verfahren umfasst die VerfahrensschritteA) Bereitstellen eines Halbleiterchips (1),B) Aufbringen einer Lotmetall-Schichtenfolge (2) auf den Halbleiterchip (1), wobei die Lotmetall-Schichtenfolge (2) eine erste metallische Schicht (2a) umfassend Indium oder eine Indium-Zinn-Legierung umfasst,C) Bereitstellen eines Leiterrahmens (3),D) Aufbringen einer Metallisierungs-Schichtenfolge (4) auf den Leiterrahmen (3), wobei die Metallisierungs-Schichtenfolge (4) eine über dem Leiterrahmen (3) angeordnete vierte Schicht umfassend Indium und/oder Zinn und eine über der vierten Schicht (4a) angeordnete dritte Schicht (4c) umfassend Gold umfasst,E) Bildung einer intermetallische Zwischenschicht (6), die Gold und Indium, Gold und Zinn und/oder Gold, Zinn und Indium umfasst;G) Aufbringen des Halbleiterchips (1) über die Lotmetall-Schichtenfolge (2) und die intermetallische Zwischenschicht (6) auf den Leiterrahmen (3),H) Heizen der unter F) erzeugten Anordnung zur Befestigung des Halbleiterchips (1) auf dem Leiterrahmen (3).