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公开(公告)号：KR1020010114169A
公开(公告)日：2001-12-29
申请号：KR1020010034975
申请日：2001-06-20
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/304
Abstract: 반도체 웨이퍼와 같은 피처리체(W)위의 막을 분해하기 위하여 불필요한 막은 처리용기(8) 내를 통과하는 세정가스에 의해 제거된다. 이 경우에, 세정가스는 가스가열 기구(52)에 의해 가열되고 활성화되며, 세정가스는 이러한 상태에서 처리용기(8)를 통과한다. 이와 같이 함으로써, 석영제 처리용기 내의 처리용기를 손상시키지 않고 불필요한 막은 효과적으로 제거된다.
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公开(公告)号：KR101672078B1
公开(公告)日：2016-11-02
申请号：KR1020130153691
申请日：2013-12-11
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/687 , C23C16/458 , C23C16/455 , H01J37/32 , H01L21/02
CPC classification number: H01J37/321 , C23C16/45536 , C23C16/45551 , C23C16/4584 , H01J37/32082 , H01J37/3211 , H01J37/3244 , H01J37/32651 , H01J37/32715 , H01J37/32733 , H01J37/32752 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02211 , H01L21/02214 , H01L21/02219 , H01L21/02274 , H01L21/0228 , H01L21/68764 , H01L21/68771
Abstract: 진공용기내에서기판에대해성막처리를행하도록구성된성막장치는, 상기기판을적재하도록구성된기판적재영역을공전시키도록구성된회전테이블과, 상기기판적재영역에처리가스를공급하도록구성된처리가스공급부를포함하고, 상기회전테이블의회전에수반하여상기기판상에분자층혹은원자층을순차적층하여박막을형성하도록구성된성막영역과, 상기성막영역에대해상기회전테이블의회전방향으로이격되어형성된플라즈마발생영역에서, 플라즈마발생용가스의플라즈마화에의해생성된플라즈마에의해상기분자층혹은원자층을개질처리하도록구성된플라즈마처리부와, 플라즈마중의이온을상기기판의표면에인입시키기위해, 상기회전테이블상의상기기판의높이보다도하방측에설치된하측바이어스전극및 상기높이와동일하거나혹은당해높이보다도상방측에배치된상측바이어스전극과, 상기하측바이어스전극및 상기상측바이어스전극중 적어도한쪽에접속되고, 상기하측바이어스전극및 상기상측바이어스전극이상기플라즈마발생영역을사이에두고용량결합되어상기기판에바이어스전위를형성하도록구성된고주파전원부와, 상기진공용기내를배기하도록구성된배기기구를구비한다.
Abstract translation: 用于对基板进行成膜处理的成膜装置包括旋转台，成膜区域，被配置为包括处理气体供给部，等离子体处理部，设置在位置的下侧的下偏置电极 位于旋转台上的基板的高度，布置在高度位置的相同位置的上偏置电极或高度位置的上侧;高频电源部分，连接到下偏置电极和下偏置电极中的至少一个; 所述上偏置电极并且被配置为以所述下偏置电极和所述上偏置电极电容耦合的方式在所述衬底上形成偏置电位，以及排气机构。
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公开(公告)号：KR101654968B1
公开(公告)日：2016-09-06
申请号：KR1020140013114
申请日：2014-02-05
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/687 , H01J37/32 , C23C16/455
CPC classification number: C23C16/45519 , C23C16/4554 , C23C16/45551 , H01J37/32541 , H01J37/32568 , H01J37/32715 , H01J37/32733
Abstract: 회전테이블(2)의하방측에서개질영역(S1)에대향하는위치에바이어스전극(120)을배치함과함께, 개질영역(S1)의상방측에패러데이실드(95)를배치하고, 이들바이어스전극(120)과패러데이실드(95)를용량결합시켜상기개질영역(S1)에바이어스전계를형성한다. 그리고, 바이어스전극(120)에대해서, 회전테이블(2)의회전방향에서의폭 치수(t)가서로인접하는웨이퍼(W)끼리의이격치수(d)보다도작게되도록형성하여, 서로인접하는웨이퍼(W)에대해동시에바이어스전계가가해지는것을방지하면서, 각웨이퍼(W)에대해개별로바이어스전계를형성한다.
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公开(公告)号：KR1020160102897A
公开(公告)日：2016-08-31
申请号：KR1020160019238
申请日：2016-02-18
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/02 , H01L21/205 , H01L21/687 , H01L21/67 , H01L21/324 , H01L21/54
CPC classification number: C23C16/45544 , C23C16/45578 , C23C16/46
Abstract: 성막장치는, 대략원통형의처리실과, 해당처리실내에설치되고, 기판을상면에적재가능한회전테이블과, 상기처리실의내측벽으로부터상기회전테이블의중심축을향하여연장되고, 상기회전테이블의반경방향을따라서상기회전테이블의상방으로연장되는가스노즐과, 상기처리실의내측벽의적어도일부및/또는상기회전테이블의중심축주위의적어도일부를벽면형상으로덮도록설치된측벽히터를갖는다.
Abstract translation: 本发明提供一种可以促进气体活化并调节膜沉积的基板表面内的均匀性的成膜装置。 膜沉积设备大致包括：圆柱形处理室; 旋转工作台安装在相应的处理室内部并允许衬底堆叠在其上表面上; 从处理室的内壁朝向旋转台的中心轴线延伸的气体喷嘴，沿旋转台的径向向旋转台的上部延伸; 以及侧壁加热器，其被安装成覆盖处理室的内壁的至少一部分和/或旋转台的中心轴线的周围的至少一部分为壁表面的形状。
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公开(公告)号：KR101563777B1
公开(公告)日：2015-10-27
申请号：KR1020130011848
申请日：2013-02-01
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205
CPC classification number: H01L21/02263 , C23C16/4554 , C23C16/509 , H01L21/02164 , H01L21/02219 , H01L21/0228
Abstract: 회전테이블에의해공전하고있는웨이퍼로부터보았을때에있어서의제1 처리영역과제2 처리영역사이에분리영역을설치하는동시에, 회전테이블에의해공전하고있는웨이퍼로부터보았을때에있어서의제2 처리영역과제1 처리영역사이에, 플라즈마발생부에의해웨이퍼위의반응생성물의개질을행하는개질영역을배치한다. 그리고, 개질영역의주위를둘러싸도록하우징의돌기부를배치하고, 제3 처리영역의분위기를당해제3 처리영역에인접하는분위기보다도고압으로설정한다.
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Patent Agency Ranking
公开(公告)号：KR1020150001640A
公开(公告)日：2015-01-06
申请号：KR1020140076618
申请日：2014-06-23
Applicant: 도쿄엘렉트론가부시키가이샤
CPC classification number: C23C16/345 , C23C16/45536 , C23C16/45557 , H01J37/321 , H01J37/32449 , H01J37/32623 , H01J37/32651 , H01J37/32715 , H01J37/32779 , H01J37/32816 , H01L21/02274 , C23C16/50 , H01L21/0228
Abstract: 진공 용기 내에서 기판에 대해 박막을 형성하는 성막 방법으로, 가스를 플라즈마화하여 얻어진, 상기 박막의 품질에 관여하는 활성종을 기판에 공급하는 공정을 포함하고, 기판에 제1 막을 성막하는 제1 공정과, 가스를 플라즈마화하여 얻어진, 상기 박막의 품질에 관여하는 활성종을, 제어 파라미터를 조정함으로써, 단위 막 두께당 활성종의 공급량이 상기 제1 공정에 있어서의 단위 막 두께당 활성종의 제1 공급량보다도 많아지도록 기판에 공급하는 공정을 포함하고, 상기 제1 막 상에 당해 제1 막과 동일한 종별의 막인 제2 막을 성막하는 제2 공정을 구비하였다.
Abstract translation: 本发明涉及一种膜沉积方法，一种存储介质和一种成膜装置。 薄膜沉积方法是在真空室内的基板上沉积薄膜的方法。 该方法包括：将第一膜沉积在基板上的第一工艺，第一工艺包括提供通过将气体改变为等离子体获得的活性物质的过程，并且与薄膜的质量相关; 以及在第一膜上沉积与第一膜相同类型的第二膜的第二工艺，第二工艺包括向基板供应活性物质的过程，使得每个活性物质的供应量 通过调整受控参数，单位膜厚度大于第一工序中单位膜厚度的活性物质的第一供给量。
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公开(公告)号：KR1020140100442A
公开(公告)日：2014-08-14
申请号：KR1020140013114
申请日：2014-02-05
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/687 , H01J37/32 , C23C16/455
CPC classification number: C23C16/45519 , C23C16/4554 , C23C16/45551 , H01J37/32541 , H01J37/32568 , H01J37/32715 , H01J37/32733 , H01L21/68714
Abstract: A bias electrode (120) is arranged in a position which faces a reforming region (S1) in the lower part of a rotation table (2). A faraday shield (95) is arranged in the front part of the reforming region (S1). A bias electric field is formed in the reforming region (S1) by the capacitive coupling of the bias electrode (120) and the faraday shield (95). And, with regard to the bias electrode (120), a width dimension (t) in the rotation direction of the rotation table (2) is smaller than the separation demission (d) between adjacent wafers, thereby preventing the bias electric field from being simultaneously applied to the adjacent wafers and individually forming a bias electric field with regard to each wafer.
Abstract translation: 偏置电极（120）配置在与旋转台（2）的下部的重整区域（S1）相对的位置。 在重整区域（S1）的前部设有法拉第罩（95）。 通过偏置电极（120）和法拉第屏蔽（95）的电容耦合，在重整区（S1）中形成偏置电场。 并且，关于偏置电极（120），旋转台（2）的旋转方向的宽度尺寸（t）小于相邻晶片间的分离离子（d），从而防止偏置电极 同时施加到相邻晶片并且相对于每个晶片分别形成偏置电场。
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公开(公告)号：KR1020140077841A
公开(公告)日：2014-06-24
申请号：KR1020130153691
申请日：2013-12-11
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/687 , C23C16/458 , C23C16/455 , H01J37/32 , H01L21/02
CPC classification number: H01J37/321 , C23C16/45536 , C23C16/45551 , C23C16/4584 , H01J37/32082 , H01J37/3211 , H01J37/3244 , H01J37/32651 , H01J37/32715 , H01J37/32733 , H01J37/32752 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02211 , H01L21/02214 , H01L21/02219 , H01L21/02274 , H01L21/0228 , H01L21/68764 , H01L21/68771
Abstract: A film formation apparatus, which is configured to conduct a film formation process for a substrate in a vacuum chamber, includes a rotating table configured to revolve a substrate loading area configured to load a substrate thereon; a film formation area configured to include a process gas supply part configured to supply a process gas to the substrate mounting area and sequentially laminate a molecular layer or an atomic layer on the substrate with rotation of the rotating table to form a thin film; a plasma processing part configured to conduct modification processing on the molecular layer or the atomic layer by plasma produced through plasma formation of a gas for plasma generation in a plasma generation area formed separately from the film formation area in a direction of rotation of the rotating table; a lower bias electrode provided at a lower side of the height position of the substrate on the rotating table to attract ions in the plasma to a surface of the substrate; an upper bias electrode arranged at the same height position or an upper side of the height position of the substrate; a high-frequency power source part connected to at least one of the lower bias electrode and the upper bias electrode and configured to form a bias electric potential on the substrate in such a manner that the lower bias electrode and the upper bias electrode are capacitively coupled through the plasma generation area; and an exhaust device configured to evacuate inside of the vacuum chamber.
Abstract translation: 构造成在真空室中进行基板的成膜处理的成膜装置包括旋转台，被配置为旋转被配置为在其上装载基板的基板装载区域; 成膜区域，其被配置为包括处理气体供给部，其被配置为向所述基板安装区域提供处理气体，并且通过所述旋转台的旋转顺序地将所述基板上的分子层或原子层层叠以形成薄膜; 等离子体处理部，其被配置为通过等离子体形成等离子体形成等离子体生成等离子体生成等离子体生成区域，使其在分子层或原子层上进行改性处理，所述等离子体产生区域与所述成膜区域分开地形成在所述旋转台的旋转方向上 ; 下偏置电极，设置在旋转台上的基板的高度位置的下侧，以将等离子体中的离子吸引到基板的表面; 布置在所述基板的高度位置的相同高度位置或上侧的上偏置电极; 连接到所述下偏置电极和所述上偏置电极中的至少一个的高频电源部，并且被配置为以所述下偏置电极和所述上偏置电极电容耦合的方式在所述基板上形成偏置电位 通过等离子体发生区域; 以及构造成在真空室内抽真空的排气装置。
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公开(公告)号：KR1020140005818A
公开(公告)日：2014-01-15
申请号：KR1020130078708
申请日：2013-07-05
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205
CPC classification number: H01L21/0206 , C23C16/0227 , C23C16/45551 , H01J37/321 , H01J37/3211 , H01J37/32449 , H01J37/32513 , H01J37/32651 , H01J37/32715 , H01J37/32733 , H01J37/32862
Abstract: A film forming device obtains a thin film by arranging a layer of a reaction product after repeating a cycle over and over again which sequentially supplies different processing gases to a substrate. A driving method of the film forming device comprises; a vacuum container; a rotary table which is arranged within the vacuum container and loads and rotates the substrate; a first processing gas supplier which supplies first processing gas to the substrate; a second processing gas supplier which is separately installed from the first processing gas supplier in a rotary direction of the rotary table and supplies second processing gas to the substrate; a separation area which is installed between the first and second processing gas supplier and separates the first and second processing gases; a first vacuum exhaust pipe for mostly discharging the first processing gas; a second vacuum exhaust pipe which is separately installed from the first vacuum exhaust pipe in the rotary direction of the rotary table and mostly discharges the second processing gas; and a cleaning gas supplier which supplies cleaning gas for cleaning the rotary table. The driving method of the film forming device comprises a cleaning process which stops the exhaust from the first vacuum exhaust pipe and performs the vacuum exhaust from the second vacuum exhaust pipe and comprises supplies the cleaning gas to the inner side of the vacuum container from the cleaning gas supplier. [Reference numerals] (7) Control unit
Abstract translation: 成膜装置通过在重复循环一次又一次的循环后排列反应产物层获得薄膜，其顺序地向基板供应不同的处理气体。 成膜装置的驱动方法包括： 真空容器; 旋转台，其设置在真空容器内并负载并旋转基板; 第一处理气体供应器，其向所述基板提供第一处理气体; 第二处理用气体供给体，与第一处理用气体供给体在旋转台的旋转方向分开安装，并向基板供给第二处理气体; 分离区，安装在第一和第二处理气体供应器之间并分离第一和第二处理气体; 用于主要排出第一处理气体的第一真空排气管; 第二真空排气管，其在旋转台的旋转方向上与第一真空排气管分开安装，并且主要排出第二处理气体; 以及用于清洁旋转台的清洁气体的清洁气体供应器。 成膜装置的驱动方法包括清洁处理，其停止来自第一真空排气管的排气并执行来自第二真空排气管的真空排气，并且包括将清洁气体从清洗器供给到真空容器的内侧 燃气供应商 （附图标记）（7）控制单元
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公开(公告)号：KR100809759B1
公开(公告)日：2008-03-04
申请号：KR1020010029396
申请日：2001-05-28
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205
Abstract: 본 발명은, 피처리체가 수용된 반응실을 소정의 온도로 가열하는 반응실가열공정과, 일산화이질소로 이루어지는 처리가스를, 산질화막의 형성이 가능한 반응온도 이상으로 가열하는 가스가열공정과, 상기 가열된 반응실 내부로 상기 가열된 처리가스를 공급하여 상기 피처리체에 산질화막을 형성하는 성막공정을 구비한다. 상기 반응실가열공정에 있어서, 상기 반응실의 가열온도는, 상기 처리가스의 반응온도보다 낮게 설정되어 있다.
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