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公开(公告)号：KR1020110135770A
公开(公告)日：2011-12-19
申请号：KR1020100055690
申请日：2010-06-11
Applicant: 삼성전자주식회사
IPC: H01L21/8242 , H01L27/108
CPC classification number: H01L28/91
Abstract: PURPOSE: A method for manufacturing a semiconductor device is provided to improve a leaning phenomenon by securing critical dimension of the lower region of a mold for storage electrode formation. CONSTITUTION: An inter-layer insulating film(100) equipped with a contact plug(110) is formed in the top of a substrate. An insulating layer(130) for a first mold and an insulating layer(140) for a second mold which are include different materials are respectively laminated on the inter-layer insulating film. A first opening part which passes through the insulating layer for the first mold and the insulating layer for the second mold is formed. A second opening part in which an inner wall of the insulating layer for the first mold of the first opening part is selectively expanded is formed by executing a dry etching process. A storage electrode is formed according to the inner wall of the second opening part.
Abstract translation: 目的：提供一种用于制造半导体器件的方法，用于通过确保用于存储电极形成的模具的下部区域的临界尺寸来改善倾斜现象。 构成：在衬底的顶部形成配备有接触插塞（110）的层间绝缘膜（100）。 在层间绝缘膜上分别层叠用于第一模具的绝缘层（130）和包括不同材料的用于第二模具的绝缘层（140）。 形成通过第一模具用绝缘层和第二模具用绝缘层的第一开口部。 通过执行干式蚀刻工艺来形成第二开口部分，其中用于第一开口部分的第一模具的绝缘层的内壁选择性地膨胀。 存储电极根据第二开口部的内壁形成。
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公开(公告)号：KR1020090116360A
公开(公告)日：2009-11-11
申请号：KR1020080042251
申请日：2008-05-07
Applicant: 삼성전자주식회사
CPC classification number: H01L21/76843 , H01L21/28518 , H01L21/76814 , H01L21/76846 , H01L21/76855 , H01L23/485 , H01L27/24 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
Abstract: PURPOSE: A method for forming a contact structure and the method for manufacturing a semiconductor device using the same are provided to form a metal oxide silicide layer uniformly by performing a silicidation process and forming a metal layer on a material layer including silicon and oxygen. CONSTITUTION: An insulation layer(106) is formed on an object with a contact region(103). An opening is formed to expose a contact region by etching an insulation layer. A material layer containing the silicon and oxygen is formed in the exposed contact region. A metal layer is formed on the material layer containing the silicon and oxygen. A metal oxide silicide layer(121) is formed on a contact region by reacting the material layer with the metal layer. A conductive layer(124) to fill the opening is formed on the metal oxide silicide layer.
Abstract translation: 目的：提供一种用于形成接触结构的方法和使用其的半导体器件的制造方法，以通过在硅和氧的材料层上进行硅化处理和形成金属层来均匀地形成金属氧化物硅化物层。 构成：在具有接触区域（103）的物体上形成绝缘层（106）。 通过蚀刻绝缘层形成开口以暴露接触区域。 在暴露的接触区域中形成含有硅和氧的材料层。 在含有硅和氧的材料层上形成金属层。 通过使材料层与金属层反应，在接触区域上形成金属氧化物硅化物层（121）。 在金属氧化物硅化物层上形成填充开口的导电层（124）。
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公开(公告)号：KR100807234B1
公开(公告)日：2008-02-28
申请号：KR1020060113093
申请日：2006-11-16
Applicant: 삼성전자주식회사
IPC: H01L21/027
CPC classification number: H01L21/31133 , G03F7/422 , G03F7/425 , H01L21/28061 , H01L29/4941 , H01L29/517 , H01L29/6659 , H01L29/7833 , G03F7/42
Abstract: A method for removing photoresist is provided to completely remove pretreated photoresist in a cleaning process using a photoresist cleaning solution by making the photoresist modified by being exposed to an ion implantation process have a state of being easily removed in a photoresist cleaning process. Supercritical carbon dioxide is penetrated into photoresist existing on a substrate having a conductive structure including metal to perform a pretreatment process on the photoresist so that the photoresist has a state of being easily removed in a subsequent cleaning process(S130). The pretreated photoresist is removed from the substrate by using a photoresist cleaning solution including an alkanolamine of 8-20 weight percent for avoiding corrosion of the metal, a polar organic solvent of 25-40 weight percent, a reducing agent of 0.5-3 weight percent and excess water(S150). The photoresist can include a photoresist pattern used as an ion implantation mask, a photoresist pattern used as an etch mask, and residual photoresist.
Abstract translation: 提供了一种去除光致抗蚀剂的方法，通过使光致抗蚀剂通过暴露于离子注入工艺而被修饰的光刻胶在光致抗蚀剂清洁过程中具有容易除去的状态，在使用光致抗蚀剂清洁溶液的清洁过程中完全去除预处理的光致抗蚀剂。 超临界二氧化碳渗透到具有包括金属的导电结构的基板上的光致抗蚀剂中，以在光致抗蚀剂上进行预处理工艺，使得光致抗蚀剂在随后的清洗过程中具有容易去除的状态（S130）。 通过使用包含8-20重量％的链烷醇胺的光致抗蚀剂清洁溶液从基材上除去预处理的光致抗蚀剂，以避免金属的腐蚀，25-40重量％的极性有机溶剂，0.5-3重量％的还原剂 和过量水（S150）。 光致抗蚀剂可以包括用作离子注入掩模的光致抗蚀剂图案，用作蚀刻掩模的光致抗蚀剂图案和残留光致抗蚀剂。
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公开(公告)号：KR101679721B1
公开(公告)日：2016-11-28
申请号：KR1020100126890
申请日：2010-12-13
Applicant: 삼성전자주식회사
IPC: G03F1/76 , H01L21/027
CPC classification number: B82Y10/00 , G03F1/46 , G03F1/48 , G03F1/50 , G03F1/54 , G03F1/68 , G03F1/80
Abstract: 투명기판상에순차적으로적층된차광막패턴과반사방지막패턴을형성한다. 차광막패턴의측벽을산화(oxidation) 및질화(nitridation)시킴으로써보호막패턴을형성한다. 보호막패턴을형성함으로써포토마스크제조공정에서사용되는산성용액에의해포토마스크패턴의선폭이감소되는것을방지할수 있다.
Abstract translation: 在制造光掩模图案的方法中，在透明基板上依次形成遮光层图案和抗反射层图案。 在遮光层图案的侧壁上进行氧化和氮化处理，以在遮光层图案的横向部分上形成保护层图案。
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公开(公告)号：KR101575190B1
公开(公告)日：2015-12-08
申请号：KR1020100013113
申请日：2010-02-12
Applicant: 삼성전자주식회사
IPC: H01L21/302 , H01L21/8242 , H01L21/8247
CPC classification number: H01L21/31111 , H01L21/32134 , H01L21/76802 , H01L27/10852 , H01L27/10876 , H01L27/10894 , H01L27/11578 , H01L27/11582 , H01L28/91 , H01L29/4236 , H01L29/66621 , H01L29/66833 , H01L29/7926
Abstract: 본발명은반도체기판상의절연막트렌치측벽을유기소재고분자물질과 H-F기가반응하여식각액을생성선택식각하여, 윗면과바닥면의 CD가차이가없는깊은트렌치를만드는방법을제공한다. 반도체기판상에산화막을형성하고, 상기산화막에깊은트렌치를형성하고, 상기트렌치소정의깊이에유기소재고분자물질을채우고, 상기트렌치안의유기소재고분자물질에 H-F기가있는식각가스를공급하여유기소재고분자물질성분과 H-F기가반응하여부산물로물을만들어축적된 H-F기가습식식각액이되어선택적으로트렌치측벽을식각하고, 상기유기소재고분자물질을제거하면반도체기판상에윗면과바닥면의 CD가일정한산화막트렌치가형성된다.
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Patent Agency Ranking
公开(公告)号：KR1020110126301A
公开(公告)日：2011-11-23
申请号：KR1020100045900
申请日：2010-05-17
Applicant: 삼성전자주식회사
IPC: H01L21/76
CPC classification number: H01L21/76229 , H01L21/28273 , H01L27/11526 , H01L27/11531
Abstract: PURPOSE: A methods of forming an isolation layer, semiconductor devices having an isolation layer and methods of manufacturing the same are provided to prevent a void by forming an element isolation film using a material having superior gap fill characteristics in a narrow trench. CONSTITUTION: In a methods of forming an isolation layer, semiconductor devices having an isolation layer and methods of manufacturing the same, a plurality of first structures(122) are separated from each other in the first region(A) of a substrate(100). A plurality of second structures(124) are separated from each other in the second region(A) of the substrate(100). A first separation distance(W1) of the first structure is smaller than the second separation distance(W2) of the second structure. A first trench and a second trench are formed in the substrate. The first depth of the first trench is smaller than the second depth of the second trench.
Abstract translation: 目的：提供一种形成隔离层的方法，具有隔离层的半导体器件及其制造方法，以通过在窄沟槽中使用具有优异间隙填充特性的材料形成元件隔离膜来防止空隙。 构成：在形成隔离层的方法中，具有隔离层的半导体器件及其制造方法多个第一结构（122）在基板（100）的第一区域（A）中彼此分离， 。 多个第二结构（124）在基板（100）的第二区域（A）中彼此分离。 第一结构的第一分隔距离（W1）小于第二结构的第二间隔距离（W2）。 第一沟槽和第二沟槽形成在衬底中。 第一沟槽的第一深度小于第二沟槽的第二深度。
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公开(公告)号：KR1020110093213A
公开(公告)日：2011-08-18
申请号：KR1020100013113
申请日：2010-02-12
Applicant: 삼성전자주식회사
IPC: H01L21/302 , H01L21/8242 , H01L21/8247
CPC classification number: H01L21/31111 , H01L21/32134 , H01L21/76802 , H01L27/10852 , H01L27/10876 , H01L27/10894 , H01L27/11578 , H01L27/11582 , H01L28/91 , H01L29/4236 , H01L29/66621 , H01L29/66833 , H01L29/7926
Abstract: PURPOSE: A semiconductor which has a trench without a CD difference between the top and bottom of the semiconductor and a manufacturing method thereof are provided to form a capacitor electrode of a fixed CD on the top and the bottom of the semiconductor, thereby obtaining a DRAM cell with superior electrical features. CONSTITUTION: A trench(130) is filled with an organic material polymer. An etching gas is supplied to the trench. The etching gas includes an H-F group in the organic material polymer. The organic material polymer is reacted with the H-F group to generate a wet etchant. The sidewall of the trench is selectively etched. The trench of a fixed CD is formed on the top and the bottom of the semiconductor by eliminating the organic material polymer.
Abstract translation: 目的：提供在半导体的顶部和底部之间具有没有CD差异的沟槽的半导体及其制造方法，以在半导体的顶部和底部形成固定CD的电容器电极，从而获得DRAM 电池具有优越的电气特性。 构成：沟槽（130）填充有机材料聚合物。 蚀刻气体被供应到沟槽。 蚀刻气体包括有机材料聚合物中的H-F基团。 有机材料聚合物与H-F基团反应以产生湿蚀刻剂。 有选择地蚀刻沟槽的侧壁。 通过去除有机材料聚合物，在半导体的顶部和底部形成固定CD的沟槽。
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公开(公告)号：KR1020090105621A
公开(公告)日：2009-10-07
申请号：KR1020080031185
申请日：2008-04-03
Applicant: 삼성전자주식회사
IPC: H01L21/304
Abstract: PURPOSE: A method for cleaning a wafer and a device for performing the same are provided to remove the contaminant on the wafer by applying the ultrasound wave to the front surface of the wafer. CONSTITUTION: A wafer is immersed in a cleaning solution. An interval between the position for applying a first ultrasound wave and a first surface of the wafer is controlled(ST202). The first surface of the wafer is cleaned by applying the first ultrasound wave to the first surface of the wafer(ST204). The interval between the position for applying a second ultrasound wave and a second surface of the wafer are controlled(ST206). The second surface of the wafer is cleaned by applying the second ultrasound wave to the second surface of the wafer(ST208).
Abstract translation: 目的：提供清洁晶片的方法和用于执行晶片的装置，以通过将超声波施加到晶片的前表面来去除晶片上的污染物。 构成：将晶片浸入清洁溶液中。 控制用于施加第一超声波的位置与晶片的第一表面之间的间隔（ST202）。 通过将第一超声波施加到晶片的第一表面来清洁晶片的第一表面（ST204）。 控制用于施加第二超声波的位置与晶片的第二表面之间的间隔（ST206）。 通过将第二超声波施加到晶片的第二表面来清洁晶片的第二表面（ST208）。
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公开(公告)号：KR100829605B1
公开(公告)日：2008-05-15
申请号：KR1020060043035
申请日：2006-05-12
Applicant: 삼성전자주식회사
IPC: H01L27/115
CPC classification number: H01L27/115 , H01L21/76229 , H01L27/11568
Abstract: SONOS 타입의 비휘발성 메모리 장치의 제조 방법에 관한 것으로서, 상기 기판으로부터 돌출되는 소자 분리막을 형성한다. 상기 소자 분리막에 의해 노출되는 상기 기판 상에 그 표면이 상기 소자 분리막의 표면 아래에 위치하는 제1 박막을 형성한다. 상기 제1 박막 상에만 질화물의 제2 박막 패턴을 형성한다. 상기 제2 박막 패턴과 소자 분리막 상에 제3 박막 및 제4 박막을 형성한다. 상기 제4 박막, 제3 박막, 제2 박막 패턴 및 제1 박막을 순차적으로 패터닝함으로써 상기 기판 상에 상기 제1 박막의 터널 절연막, 상기 제2 박막 패턴의 전하 트랩막, 상기 제3 박막의 블로킹 절연막 및 상기 제4 박막의 게이트 전극을 포함하는 구조물들을 형성한다. 그 결과 우수한 전기적 성능의 구현이 가능한 SONOS 타입의 비휘발성 메모리 장치가 완성된다.
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公开(公告)号：KR1020080017155A
公开(公告)日：2008-02-26
申请号：KR1020060078837
申请日：2006-08-21
Applicant: 삼성전자주식회사
IPC: H01L21/8242 , H01L27/108
CPC classification number: H01L28/91 , H01L27/10814 , H01L27/10817 , H01L27/10852
Abstract: A method for manufacturing a semiconductor device is provided to obtain structural stability of a lower electrode by enlarging a lower part of an opening. An etch stop layer including a nitride and a mold layer including an oxide are formed on a substrate(100). An opening for exposing the substrate is formed by patterning the mold layer and the etch stop layer. A lateral part of the etch stop layer exposed through the opening is etched by using an etchant including H2SO4 and H2O so that a lower part of the opening defined by the etch stop layer is enlarged in comparison with a center part of the opening defined by the etch stop layer. A lower electrode(174) is formed on a surface of the opening having the enlarged lower part.
Abstract translation: 提供一种制造半导体器件的方法，通过扩大开口的下部来获得下电极的结构稳定性。 在衬底（100）上形成包括氮化物和包含氧化物的模具层的蚀刻停止层。 通过图案化模具层和蚀刻停止层来形成用于曝光衬底的开口。 通过使用包括H 2 SO 4和H 2 O的蚀刻剂蚀刻通过开口暴露的蚀刻停止层的侧面部分，使得由蚀刻停止层限定的开口的下部与由开口限定的开口的中心部分相比扩大 蚀刻停止层。 在具有扩大的下部的开口的表面上形成下电极（174）。
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