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公开(公告)号：KR1020140087908A
公开(公告)日：2014-07-09
申请号：KR1020120158707
申请日：2012-12-31
Applicant: 제일모직주식회사
Abstract: Provided are a method for manufacturing a polymer which is a method for manufacturing a polysilazane having a Si-N linkage on a main chain, and comprises the step of polymerizing through a disproportionation reaction and rearrangement reaction by activating an amino silane monomer represented by the following chemical formula 1 with the existence of a nucleophilic compound capable of coordination of the Si atom of the amino silane, and a composition for forming an insulation film comprising the manufactured polymer. [Chemical formula 1] A polysilazne polymer not substantially comprising chlorine can be manufactured, and an insulation film with the significantly less number of defects, in the case of using the polymer as a component of the composition for forming a silica-based insulation film.
Abstract translation: 提供一种制造聚合物的方法，该聚合物是在主链上具有Si-N键的聚硅氮烷的制造方法，包括通过歧化反应和重排反应进行聚合的步骤，其通过活化下述的氨基硅烷单体 存在能够配位氨基硅烷的Si原子的亲核化合物的化学式1和用于形成包含所制备的聚合物的绝缘膜的组合物。 [化学式1]在使用聚合物作为形成二氧化硅系绝缘膜的组合物的成分的情况下，可以制造实质上不含氯的聚硅氮烷聚合物，以及具有明显较少缺陷数量的绝缘膜。
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公开(公告)号：KR1020140087903A
公开(公告)日：2014-07-09
申请号：KR1020120158699
申请日：2012-12-31
Applicant: 제일모직주식회사
Abstract: Provided are a method for manufacturing a polymer which is a method for manufacturing a polysilazane having a Si-N linkage on a main chain, and comprises the step of reacting an amino silane monomer represented by the following chemical formula 1 with a nitrogen contained compound represented by chemical formula 1 with the existence of a nucleophilic compound capable of coordination of the Si atom of the amino silane, and a method for manufacturing a polymer comprising comprising the manufactured polymer. [Chemical formula 1] A polysilazne or polysiloxazane polymer not substantially comprising chlorine can be manufactured, and an insulation film with the significantly less number of defects, in the case of using the polymer as a component of the composition for forming a silica-based insulation film.
Abstract translation: 提供一种制造聚合物的方法，该聚合物是在主链上具有Si-N键的聚硅氮烷的制造方法，包括使由以下化学式1表示的氨基硅烷单体与含氮化合物表示的步骤 通过存在能够配位氨基硅烷的Si原子的亲核化合物的化学式1，以及包含制造的聚合物的聚合物的制造方法。 [化学式1]在使用聚合物作为形成二氧化硅基绝缘的组合物的组分的情况下，可以制造基本上不含氯的聚硅氮烷或聚硅氧烷氮化合物聚合物，并且具有显着更少数量的缺陷的绝缘膜 电影。
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公开(公告)号：KR1020140086732A
公开(公告)日：2014-07-08
申请号：KR1020120157572
申请日：2012-12-28
Applicant: 제일모직주식회사
CPC classification number: G03F7/0233 , G03F7/0045 , G03F7/0047 , G03F7/0226 , G03F7/039 , G03F7/0755 , G03F7/0757 , G03F7/0758
Abstract: The present invention relates to a photosensitive resin composition for an insulating film of a display device comprising: (A) an alkali-soluble resin comprising a polybezoxazole precursor, a polyamic acid, a polyimide, or the combination of the same; (B) a photosensitive diazoquinone compound; (C) a phthalocyanine compound having a maximum absorption wavelength of 600-720 nm; and (D) a solvent, to an insulating film using the same, and to a display device.
Abstract translation: 本发明涉及一种显示装置用绝缘膜用感光性树脂组合物，其特征在于，包括：（A）包含聚丁唑前体，聚酰胺酸，聚酰亚胺或其组合的碱溶性树脂; （B）光敏重氮醌化合物; （C）最大吸收波长为600-720nm的酞菁化合物; 和（D）溶剂，使用其的绝缘膜和显示装置。
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公开(公告)号：KR1020140086731A
公开(公告)日：2014-07-08
申请号：KR1020120157571
申请日：2012-12-28
Applicant: 제일모직주식회사
CPC classification number: G03F7/0226 , G03F7/0233 , G03F7/105 , G03F7/016 , G02F1/1303 , G03F7/004 , G03F7/0045 , G03F7/0382 , G03F7/0387 , G03F7/0392 , G03F7/11
Abstract: The present invention relates to a photosensitive resin composition for an insulating film of a display device which comprises (A) an alkali-soluble resin, (B) a photosensitive diazoquinone compound, (C) a color material having 400-500 nm of maximum absorption wavelength, and (D) a solvent; and to the insulating film and the display device using the composition.
Abstract translation: 本发明涉及一种显示装置的绝缘膜用感光性树脂组合物，其包含（A）碱溶性树脂，（B）感光性重氮醌化合物，（C）具有400-500nm的最大吸收的着色材料 波长和（D）溶剂; 以及使用该组合物的绝缘膜和显示装置。
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公开(公告)号：KR1020140085121A
公开(公告)日：2014-07-07
申请号：KR1020120155329
申请日：2012-12-27
Applicant: 제일모직주식회사
IPC: G03F7/039 , G03F7/016 , H01L21/027 , G02F1/13
CPC classification number: G03F7/0397 , G03F7/0166 , H01L21/0271 , H01L21/0273
Abstract: The present invention relates to a positive photosensitive resin composition which includes (A) an alkali-soluble resin, (B) a photosensitive diazoquinone compound, (C) a compound including at least one of compounds represented by chemical formula 1 -3, and (D) a solvent; and to an insulator film and a display device using the same. [Chemical formula 1][Chemical formula 2][Chemical formula 3] (In chemical formula 3, R^1 and R^2 are defined as in the specification.).
Abstract translation: 本发明涉及一种正型感光性树脂组合物，其包含（A）碱溶性树脂，（B）光敏性重氮醌化合物，（C）包含化学式1-3中的至少一种化合物的化合物和（ D）溶剂; 以及使用其的绝缘膜和显示装置。 [化学式1] [化学式2] [化学式3]（化学式3中，R 1和R 2如说明书中所定义）。
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Patent Agency Ranking26.发明公开실리카계 절연층 형성용 조성물, 실리카계 절연층 형성용 조성물의 제조방법, 실리카계 절연층 및 실리카계 절연층의 제조방법 有权用于形成二氧化硅基绝缘层的组合物，用于制造基于二氧化硅的绝缘层的组合物的方法，基于二氧化硅的绝缘层以及用于制造基于二氧化硅的绝缘层的方法
公开(公告)号：KR1020140085119A
公开(公告)日：2014-07-07
申请号：KR1020120155327
申请日：2012-12-27
Applicant: 제일모직주식회사
CPC classification number: C09D1/00 , B05D3/02 , B05D3/0254 , B05D3/0433 , C08G77/62 , C09D183/14 , C09D183/16 , H01B3/02 , H01B3/303 , H01B3/46 , H01L21/02126 , H01L21/02164 , H01L21/02214 , H01L21/02216 , H01L21/02219 , H01L21/02222 , H01L21/02282 , H01L21/02326 , H01L21/02337 , C08L83/04 , C08L83/08
Abstract: Provided is a composition for forming silica based insulating layer which includes polysilazane hydroxide or polysiloxazane hydroxide, and has 1200 ppm or less of concentrate of cyclic compound having 400 or less of weight-average molecular weight. The composition for forming silica based insulating layer can reduce thickness dispersion when forming the silica based insulating layer, thereby reducing film deficiency after chemical mechanical polishing (CMP) when manufacturing a semiconductor.
Abstract translation: 本发明提供一种二氧化硅系绝缘层形成用组合物，其包含聚硅氮烷氢氧化物或聚硅氧氮烷氢氧化物，并且具有1200ppm以下的具有400以下重均分子量的环状化合物的浓缩物。 用于形成二氧化硅基绝缘层的组合物可以在形成二氧化硅基绝缘层时减小厚度分散，从而在制造半导体时减少化学机械抛光（CMP）后的薄膜缺陷。
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公开(公告)号：KR101400182B1
公开(公告)日：2014-05-27
申请号：KR1020090136178
申请日：2009-12-31
Applicant: 제일모직주식회사
IPC: G03F7/11
CPC classification number: G03F7/0752 , G03F7/09 , G03F7/11
Abstract: 본 발명의 일 구현예에 따른 포토레지스트 하층막용 조성물은(A) 하기 화학식 1로 표시되는 폴리실록산 수지, 및 (B) 용매를 포함한다.
[화학식 1]
{(SiO
1.5 Y-SiO
1.5 )
x (SiO
2 )
y (XSiO
1.5 )
z }(OH)
e (OR
1 )
f
따라서, 우수한 보관 안정성 및 내에치성(etch resistance)을 가질 수 있고, 표면 물성의 조절이 용이할 수 있으며, 포토레지스트 패턴의 안정적인 형성을 가능하게 한다.
하층막, 포토레지스트, 실리콘, 폴리실록산-
公开(公告)号：KR101367252B1
公开(公告)日：2014-02-25
申请号：KR1020110117090
申请日：2011-11-10
Applicant: 제일모직주식회사
IPC: C11D7/50 , C11D7/00 , H01L21/306
CPC classification number: C09K13/00 , C08G77/62 , C09D183/16 , H01L21/0206 , H01L21/02087 , H01L21/02164 , H01L21/02222 , H01L21/02282 , H01L21/31111
Abstract: 알코올계 용매, 에스테르계 용매, 실란올계 용매, 알콕시실란계 용매, 알킬실라잔계 용매 및 이들의 조합으로 이루어진 군에서 선택되는 첨가제를 전체 린스액에 대하여 0.01 중량% 내지 7 중량%로 포함하는 수소화폴리실록사잔 박막용 린스액을 제공한다.
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公开(公告)号：KR101288572B1
公开(公告)日：2013-07-22
申请号：KR1020080128625
申请日：2008-12-17
Applicant: 제일모직주식회사
IPC: G03F7/075
CPC classification number: G03F7/0752 , C08G77/18 , C08L83/04 , C09D183/04 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/0332
Abstract: 본 발명은 레지스트 하층막용 하드마스크 조성물에 관한 것이다.
본 발명은 유기 실란계 중합체(A); 및 1종 이상의 안정화제(B)를 포함하는 레지스트 하층막용 하드마스크 조성물을 제공한다.
본 발명의 레지스트 하층막용 하드마스크 조성물은 우수한 저장안정성을 가지며 하드마스크 특성이 우수하여 재료층에 훌륭한 패턴을 전사할 수 있다.
하드마스크, 유기 실란계 중합체, 안정화제, 저장안정성-
公开(公告)号：KR1020130078428A
公开(公告)日：2013-07-10
申请号：KR1020110147380
申请日：2011-12-30
Applicant: 제일모직주식회사
IPC: G03F7/11 , G03F7/075 , H01L21/027
CPC classification number: G03F7/11 , G03F7/0757 , G03F7/0758 , H01L21/0273 , H01L21/0274
Abstract: PURPOSE: A composition for a resist underlayer film is provided to be able to form a resist underlayer film with an elaborate structure as the etching ability to CFx plasma, coating performance and storage stability are excellent, and the hardness is also good. CONSTITUTION: A composition for a resist underlayer film comprises organic silane polycondensate manufactured by condensation polymerization of hydrolysates produced from compounds of Chemical formula 1: [R^1O]3Si-X, Chemical formula 2: [R^2O]3Si-R^3, and Chemical formula 3: B[OR^4]3; and solvent. In Chemical formula 1, R^1 is substituted or non-substituted C1-6 alkyl, X is substituted or non-substituted C6-30 aryl. In Chemical 2, R^2 is substituted or non-substituted C1-6 alkyl, R^3 is substituted or non-substituted C1-12 alkyl. In Chemical 3, R^4 is substituted or non-substituted C1-6 alkyl. [Reference numerals] (AA) Example 1
Abstract translation: 目的：提供一种抗蚀剂下层膜用组合物，能够形成具有精细结构的抗蚀剂下层膜作为对CF x等离子体的蚀刻能力，涂膜性能和保存稳定性优异，硬度也良好。 构成：用于抗蚀剂下层膜的组合物包括由化学式1化合物产生的水解产物缩合制备的有机硅烷缩聚物：[R 1 O] 3 Si-X，化学式2：[R 2 O] 3 Si-R 3 ，和化学式3：B [OR ^ 4] 3; 和溶剂。 在化学式1中，R 1是取代或未取代的C 1-6烷基，X是取代或未取代的C 6-30芳基。 在化学式2中，R 2是取代或未取代的C 1-6烷基，R 3是取代或未取代的C 1-12烷基。 在化学式3中，R 4是取代或未取代的C 1-6烷基。 （附图标记）（AA）实施例1
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