中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

32 records (took 0.031 seconds)

    ION IMPLANTATION SYSTEM AND METHOD
    21.
    发明专利
    ION IMPLANTATION SYSTEM AND METHOD 未知

    公开(公告)号：SG10201406528PA

    公开(公告)日：2014-12-30

    申请号：SG10201406528P

    申请日：2010-10-25

    Applicant: ADVANCED TECH MATERIALS ,  ENTEGRIS INC

    Inventor： JONES EDWARD E ,  YEDAVE SHARAD N ,  TANG YING ,  CHAMBERS BARRY LEWIS ,  KAIM ROBERT ,  SWEENEY JOSEPH D ,  BYL OLEG ,  ZOU PENG

    Abstract: ION IMPLANTATION SYSTEM AND An ion implantation system and method, providing cooling of dopant gas in the dopant gas feed line, to combat heating and decomposition of the dopant gas by arc chamber heat generation, e.g., using boron source materials such as B F or 2 4 other alternatives to BF . Various arc chamber 3 thermal management arrangements are described, as well as modification of plasma properties, specific flow arrangements, cleaning processes, power management, eqillibrium shifting, optimization of extraction optics,detection of deposits in flow passages, and source life optimization, to achieve efficient operation of the ion implantation system. Fig.l -34-

    BORON ION IMPLANTATION USING ALTERNATIVE FLUORINATED BORON PRECURSORS, AND FORMATION OF LARGE BORON HYDRIDES FOR IMPLANTATION
    22.
    发明专利
    BORON ION IMPLANTATION USING ALTERNATIVE FLUORINATED BORON PRECURSORS, AND FORMATION OF LARGE BORON HYDRIDES FOR IMPLANTATION 未知

    公开(公告)号：SG2014011944A

    公开(公告)日：2014-08-28

    申请号：SG2014011944

    申请日：2006-08-30

    Applicant: ADVANCED TECH MATERIALS

    Inventor： OLANDER KARL M ,  ARNO JOSE I ,  KAIM ROBERT

    Abstract: Methods of implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. A method of manufacturing a semiconductor device including implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. Also disclosed are a system for supplying a boron hydride precursor, and methods of forming a boron hydride precursor and methods for supplying a boron hydride precursor. In one implementation of the invention, the boron hydride precursors are generated for cluster boron implantation, for manufacturing semiconductor products such as integrated circuitry.

    BORON ION IMPLANTATION USING ALTERNATIVE FLUORINATED BORON PRECURSORS, AND FORMATION OF LARGE BORON HYDRIDES FOR IMPLANTATION
    23.
    发明专利
    BORON ION IMPLANTATION USING ALTERNATIVE FLUORINATED BORON PRECURSORS, AND FORMATION OF LARGE BORON HYDRIDES FOR IMPLANTATION 未知

    公开(公告)号：SG165321A1

    公开(公告)日：2010-10-28

    申请号：SG2010062610

    申请日：2006-08-30

    Applicant: ADVANCED TECH MATERIALS

    Inventor： OLANDER KARL M ,  ARNO JOSE I ,  KAIM ROBERT

    Abstract: Methods of implanting boron-containing ions using fluorinated boron- containing dopant species that are more readily cleaved than boron trifluoride. A method of manufacturing a semiconductor device including implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. Also disclosed are a system for supplying a boron hydride precursor, and methods of forming a boron hydride precursor and methods for supplying a boron hydride precursor. In one implementation of the invention, the boron hydride precursors are generated for cluster boron implantation, for manufacturing semiconductor products such as integrated circuitry.

Patent Agency Ranking