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公开(公告)号：SG190334A1
公开(公告)日：2013-06-28
申请号：SG2013038492
申请日：2011-12-07
Applicant: BASF SE
Abstract: An aqueous polishing composition comprising (A) abrasive ceria particles and (B) amphiphilic nonionic surfactants selected water-soluble and water-dispersible, linear and branched polyoxyalkylene blockcopolymers of the general formula I: R[(B1)m/(B2)nY]p (I), wherein the indices and the variables have the following meaning: m, n, and p integers ≥ 1; R hydrogen atom or monovalent or polyvalent organic residue, except C5-C20 alkyl groups; (B1) block of oxyethylene monomer units; (B2) block of substituted oxyalkylene monomer units wherein the substituents are selected from two methyl groups, alkyl groups of more than two carbon atoms and cycloalkyl, aryl, alkyl-cycloalkyl, alkyl-aryl, cycloalkyl-aryl and alkyl-cycloalkyl-aryl groups; and Y hydrogen atom or monovalent organic residue, except C5-C20 alkyl groups; with the proviso that when (B) contains more than one block (B1) or (B2) two blocks of the same type are separated by a block of the other type.
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22.发明公开A PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING (CMP) OF III-V MATERIAL IN THE PRESENCE OF A CMP COMPOSITION COMPRISING A SPECIFIC NON-IONIC SURFACTANT 审中-公开PROCESS用于产生具有化学机械抛光（CMP）的III-V材料的存在CMP组合物的半导体元件与特定的，非离子表面活性
公开(公告)号：EP2852644A4
公开(公告)日：2016-04-06
申请号：EP13794728
申请日：2013-05-21
Applicant: BASF SE
Inventor： NOLLER BASTIAN MARTEN , GILLOT CHRISTOPHE , FRANZ DIANA , LI YUZHUO
IPC: H01L21/306 , C09G1/02
CPC classification number: C09G1/02 , B81C2201/0121 , B81C2201/0123 , B81C2201/0126 , H01L21/02024 , H01L21/302 , H01L21/304 , H01L21/30625 , H01L21/3212 , H01L21/461
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公开(公告)号：EP2847785A4
公开(公告)日：2016-03-16
申请号：EP13788644
申请日：2013-04-29
Applicant: BASF SE
Inventor： FRANZ DIANA , NOLLER BASTIAN MARTEN
IPC: H01L21/306 , C09G1/02 , C09K3/14
CPC classification number: C09G1/02 , C09K3/1463 , H01L21/02024 , H01L21/30625
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24.发明公开A PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING OF ELEMENTAL GERMANIUM AND/OR Si1-XGeX MATERIAL IN THE PRESENCE OF A CMP COMPOSITION HAVING A pH VALUE OF 3.0 TO 5.5 审中-公开用于生产半导体部件WITH化学 - 机械抛光，基础锗和/或SI1-xGex材料在CMP组合物与3.0至5.5的pH THE PRESENCE
公开(公告)号：EP2741892A4
公开(公告)日：2015-03-18
申请号：EP12819369
申请日：2012-07-30
Applicant: BASF SE
Inventor： NOLLER BASTIAN MARTEN , DRESCHER BETTINA , GILLOT CHRISTOPHE , LI YUZHOU
IPC: H01L21/306 , B24B37/04 , C09G1/02 , C09K3/14
CPC classification number: H01L21/30625 , B24B37/044 , C09G1/02 , C09K3/1463 , H01L21/02024
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Patent Agency Ranking25.发明公开
公开(公告)号：EP3180406A4
公开(公告)日：2018-04-11
申请号：EP15831838
申请日：2015-07-24
Applicant: BASF SE
Inventor： LAN YONGQING , NOLLER BASTIAN MARTEN , JIANG LIANG , SHEN DANIEL KWO HUNG , GOLZARIAN REZA
IPC: H01L21/321 , C09G1/02 , C09K3/14
CPC classification number: C09K3/14 , C09G1/02 , C09K3/1436 , C09K3/1463 , H01L21/3212
Abstract: Described are a chemical-mechanical polishing (CMP) composition comprising abrasive particles in the form of organic/inorganic composite particles as well as the use of said composite particles as abrasive particles in a CMP composition and processes for the manufacture of a semiconductor device comprising chemical mechanical polishing of a substrate in the presence said CMP composition.
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26.发明公开A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION COMPRISING A POLY(AMINOACID) 审中-公开CHEMISCH-MECHANISCHE POLIERZUSAMMENSETZUNG MIT EINER POLY（AMINOSÄURE）
公开(公告)号：EP3099756A4
公开(公告)日：2017-08-02
申请号：EP15743237
申请日：2015-01-21
Applicant: BASF SE
Inventor： LAUTER MICHAEL , LANGE ROLAND , NOLLER BASTIAN MARTEN , SIEBERT MAX
IPC: C09G1/18 , C09G1/02 , C09K3/14 , H01L21/304 , H01L21/3105 , H01L21/321
CPC classification number: C09G1/02 , C09G1/18 , C09K3/1409 , C09K3/1463 , H01L21/31053 , H01L21/31055 , H01L21/3212 , H01L21/76224
Abstract: A chemical mechanical polishing (CMP) composition comprising (A) Colloidal or fumed inorganic particles or a mixture thereof, (B) a poly (amino acid) and or a salt thereof, and (M) an aqueous medium.
Abstract translation: 一种化学机械抛光（CMP）组合物，其包含（A）胶态或气相无机颗粒或其混合物，（B）聚氨基酸和/或其盐和（M）水性介质。
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27.发明公开CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION COMPRISING A PROTEIN 有权CHEMISCH-MECHANISCHE POLIERZUSAMMENSETZUNG MIT EINEM蛋白
公开(公告)号：EP2812911A4
公开(公告)日：2015-08-12
申请号：EP13746024
申请日：2013-01-25
Applicant: BASF SE , BASF SCHWEIZ AG
Inventor： LI YUZHUO , NOLLER BASTIAN MARTEN , LAUTER MICHAEL , LANGE ROLAND
IPC: H01L21/304 , C09G1/00 , H01L21/302 , H01L21/461 , H01L21/463
CPC classification number: C09G1/02 , C09G1/18 , C09K3/1463 , H01L21/30625 , H01L21/31053
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28.发明公开
公开(公告)号：EP2742103A4
公开(公告)日：2015-03-25
申请号：EP12819882
申请日：2012-07-30
Applicant: BASF SE
Inventor： NOLLER BASTIAN MARTEN , DRESCHER BETTINA , GILLOT CHRISTOPHE , LI YUZHUO , GAO NING
IPC: H01L21/306 , C09G1/02 , C09K3/14
CPC classification number: H01L21/30625 , C09G1/02 , C09K3/1463 , C23F3/00 , H01L21/02024 , H01L21/31053 , H01L21/3212
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公开(公告)号：EP2625237A4
公开(公告)日：2014-03-19
申请号：EP11830273
申请日：2011-10-04
Applicant: BASF SE
Inventor： DRESCHER BETTINA , NOLLER BASTIAN MARTEN , SCHMITT CHRISTINE , SUGIHARTO ALBERT BUDIMAN , LI YUZHUO
IPC: C09G1/02 , C09K3/14 , H01L21/306 , H01L21/321
CPC classification number: C09K13/04 , C09G1/02 , C09K3/1409 , C09K3/1463 , C09K13/06 , H01L21/30625 , H01L21/3212
Abstract: A chemical mechanical polishing (CMP) composition Abstract Use of a chemical mechanical polishing (CMP) composition comprising (A) inorganic particles, organic particles, or a mixture thereof, (B) a heteropolyacid or a salt thereof, (C) a salt comprising chloride, fluoride, bromide, or a mixture thereof as anion, and (D) an aqueous medium, for polishing a substrate comprising a self-passivating metal, germanium, nickel phosphorous (NiP), or a mixture thereof.
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