公开(公告)号：AU2003303494A1

公开(公告)日：2004-07-29

申请号：AU2003303494

申请日：2003-12-11

Applicant: LAM RES CORP

Inventor： GOTKIS YEHIEL ,  KATZ VLADIMIR ,  HEMKER DAVID ,  KISTLER RODNEY ,  BRIGHT NICOLAS J

IPC: G05B23/02 ,  H01L21/66 ,  G06F15/00

Abstract: A method for converting a slope based detection task to a threshold based detection task is provided. The method initiates with defining an approximation equation for a set of points corresponding to values of a process being monitored. Then, an expected value at a current point of the process being monitored is predicted. Next, a difference between a measured value at the current point of the process being monitored and the corresponding expected value is calculated. Then, the difference is monitored for successive points to detect a deviation value between the measured value and the expected value. Next, a transition point for the process being monitored is identified based on the detection of the deviation value. A processing system configured to provide real time data for a slope based transition and a computer readable media are also provided.

公开(公告)号：SG10201501328WA

公开(公告)日：2015-04-29

申请号：SG10201501328W

申请日：2007-08-28

Applicant: LAM RES CORP

Inventor： BOYD JOHN ,  DORDI YEZDI ,  ARUNAGIRI TIRUCHIRAPALLI ,  MOORING BENJAMIN W ,  PARKS JOHN ,  THIE WILLIAM ,  REDEKER FRITZ C ,  HOWALD ARTHUR M ,  SCHOEPP ALAN ,  HEMKER DAVID ,  CARL WOODS ,  HYUNGSUK ALEXANDER YOON ,  ALEKSANDER OWCZARZ

Abstract: A cluster architecture including a lab-ambient controlled transfer module that is coupled to one or more wet substrate processing modules The lab-ambient controlled transfer module and the one or more wet substrate processing modules manage a first ambient environment having a vacuum transfer module coupled to the lab-ambient controlled transfer module and one or more plasma processing modules The vacuum transfer module and the one or more plasma processing modules manage a second ambient environment A controlled ambient transfer module coupled to the vacuum transfer module and one or more ambient processing modules manage a third ambient environment The cluster architecture therefore enables controlled processing of the substrate in eith the first, second or third ambient environments, as well as dupng associated transitions The embodiments also provide for efficient methods for filling a trench of a substrate

公开(公告)号：MY143920A

公开(公告)日：2011-07-29

申请号：MYPI20033622

申请日：2003-09-23

Applicant: LAM RES CORP

Inventor： GOTKIS YEHIEL ,  KISTLER RODNEY ,  OWCZARZ ALEKSANDER ,  HEMKER DAVID ,  BRIGHT NICOLAS J

IPC: G01B7/06 ,  G01N27/02 ,  H01L21/302 ,  H01L21/461

Abstract: A METHOD AND AN APPARATUS FOR ENHANCEMENT OF THE EDDY CURRENT FOR MEASURING RESISTANCE-BASED FEATURES OF A SUBSTRATE IS PROVIDED. THE APPARATUS INCLUDES A SENSOR (210) CONFIGURED TO DETECT A SIGNAL PRODUCED BY AN EDDY CURRENT GENERATED ELECTROMAGNETIC FIELD. THE MAGNETIC FIELD ENHANCING SOURCE (218) IS POSITIONED TO THE ALTERNATIVE SIDE OF THE OBJECT UNDER MEASUREMENT RELATIVE TO THE SENSOR (210) TO ENABLE THE SENSITIVITY ENHANCING ACTION. THE SENSITIVITY ENHANCING SOURCE INCREASES THE INTENSITY OF THE EDDY CURRENT GENERATED IN THE OBJECT UNDER MEASUREMENT, AND AS A RESULT THE SENSITIVITY OF THE SENSOR (210). A SYSTEM ENABLED TO DETERMINE A THICKNESS OF A LAYER AND A METHOD FOR DETERMINING A RESISTANCE-BASED FEATURE CHARACTERISTIC ARE ALSO PROVIDED.

公开(公告)号：DE60231498D1

公开(公告)日：2009-04-23

申请号：DE60231498

申请日：2002-06-21

Applicant: LAM RES CORP

Inventor： YEN BI-MING ,  NI TUQIANG ,  LI LUMIN ,  HEMKER DAVID

IPC: H01J37/32 ,  H05H1/46 ,  H01L21/3065

Abstract: A plasma processing chamber is provided. The plasma processing chamber includes a bottom electrode configured to support a substrate and a top electrode located over the bottom electrode. The plasma processing chamber further includes a plasma confinement assembly designed to transition between a closed orientation and an open orientation. In the closed orientation, the plasma confinement assembly defines a first volume for plasma during processing, and in the open orientation, the plasma confinement assembly defines a second volume for plasma during processing which is larger than the first volume.

公开(公告)号：AT412250T

公开(公告)日：2008-11-15

申请号：AT00980409

申请日：2000-11-14

Applicant: LAM RES CORP

Inventor： BAILEY ANDREW ,  SCHOEPP ALAN ,  HEMKER DAVID ,  WILCOXSON MARK

IPC: H01J37/32 ,  H05H1/46 ,  H01L21/3065

Abstract: A plasma processing system that includes a plasma processing chamber that provides enhanced control over an etch process is disclosed. The plasma processing chamber is connected to a gas flow system. The gas flow system can be employed to control the release of gases into different regions within the plasma processing chamber. In addition, the volume of the released gas, e.g., the flow rate of the gas, can be adjusted by a gas flow control mechanism. In this manner, both the position and the amount of the gas that is delivered to the plasma processing chamber can be controlled. The ability to adjust the position and the amount of gas that is released into the plasma processing chamber provides for a better control over the distribution of the neutral components. This in turn enhances control over the etching process.

公开(公告)号：AU2003297336A1

公开(公告)日：2004-07-22

申请号：AU2003297336

申请日：2003-12-17

Applicant: LAM RES CORP

Inventor： OWCZARZ ALEKSANDER ,  HEMKER DAVID ,  BRIGHT NICOLAS J ,  GOTKIS YEHIEL ,  KISTLER RODNEY

IPC: H01L21/66 ,  G01B7/06 ,  G01R33/12

Abstract: A method for detecting a thickness of a layer of a wafer to be processed is provided. The method includes defining a plurality of sensors configured to create a set of complementary sensors proximate the wafer. Further included in the method is distributing the plurality of sensors along a particular radius of the wafer such that each sensor of the plurality of sensors is out of phase with an adjacent sensor by a same angle. The method also includes measuring signals generated by the plurality of sensors. Further included is averaging the signals generated by the plurality of sensors so as to generate a combination signal. The averaging is configured to remove noise from the combination signal such that the combination signal is capable of being correlated to identify the thickness of the layer.

公开(公告)号：AU2003270533A1

公开(公告)日：2004-04-08

申请号：AU2003270533

申请日：2003-09-10

Applicant: LAM RES CORP

Inventor： GOTKIS YEHIEL ,  OWCZARZ ALEKSANDER ,  HEMKER DAVID ,  BRIGHT NICOLAS ,  KISTLER RODNEY

IPC: B24B37/04 ,  B24B49/02 ,  B24B49/10 ,  H01L21/321 ,  H01L21/66 ,  G01N27/72

Abstract: A system and method of measuring a metallic layer on a substrate within a multi-step substrate process includes modifying a metallic layer on the substrate such as forming a metallic layer or removing at least a portion of the metallic layer. At least one sensor is positioned a predetermined distance from the surface of the substrate. The surface of the substrate is mapped to determine a uniformity of the metallic layer on the surface of the substrate.

公开(公告)号：AU2003253679A1

公开(公告)日：2004-01-19

申请号：AU2003253679

申请日：2003-06-23

Applicant: LAM RES CORP

Inventor： BRIGHT NICOLAS J ,  GOTKIS YEHIEL ,  KISTLER RODNEY ,  OWCZARZ ALEKSANDER ,  HEMKER DAVID

IPC: B24B1/00 ,  B24B37/013 ,  B24B57/02 ,  H01L21/00 ,  H01L21/304 ,  H01L21/306 ,  H01L21/66 ,  H01L21/302

Abstract: A system for processing a wafer is provided. The system includes a chemical mechanical planarization (CMP) tool. The CMP tool includes a wafer carrier defined within a housing. A carrier film is affixed to the bottom surface and supports a wafer. A sensor embedded in the wafer carrier. The sensor is configured to induce an eddy current in the wafer to determine a proximity and a thickness of the wafer. A cluster of sensors external to the CMP tool is included. The cluster of sensors is in communication with the sensor embedded in the wafer carrier and substantially eliminates a distance sensitivity. The cluster of sensors provides an initial thickness of the wafer to allow for a calibration to be performed on the sensor embedded in the wafer carrier. The calibration offsets variables causing inaccuracies in the determination of the thickness of the wafer during CMP operation. A method and an apparatus are also provided.