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    밸브 및 당해 밸브를 구비한 처리 장치
    31.
    发明公开
    밸브 및 당해 밸브를 구비한 처리 장치 有权
    带阀的阀和加工装置

    公开(公告)号：KR1020100003294A

    公开(公告)日：2010-01-07

    申请号：KR1020097022762

    申请日：2008-04-30

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 노자와토시히사

    IPC: F16K3/18 ,  F16K3/00 ,  F16K51/02 ,  F16K27/04

    CPC classification number: F16K3/06

    Abstract: A valve provided between a chamber, the pressure inside which can be kept reduced, and an exhaust device for exhausting the inside of the chamber. The valve has a first valve body including a first opening and a second opening that permit flow of gas between the chamber and the exhaust device, a sealing valve body placed in the first valve body and opening and closing the second opening of the first valve body by coming into contact with and separating from the second opening, a seal member provided at the sealing valve body and sealing the second opening of the first valve body when the sealing valve body closes the second opening, a valve shelter section provided at the first valve body at its inner wall section away from the second opening and shielding the seal member from the inner space of the first valve body when the sealing valve body separates and moves from the second opening, and a first pivot shaft for pivoting the sealing valve body and positioning it to either of the second opening of the first valve body and the valve shelter section.

    Abstract translation: 设置在室之间的阀，其内部的压力可以被减小，以及用于排出室的内部的排气装置。 阀具有第一阀体，其包括第一开口和允许气体在腔室和排气装置之间流动的第二开口，设置在第一阀体中的密封阀体，并且打开和关闭第一阀体的第二开口 通过与所述第二开口接触并且与所述第二开口分离，设置在所述密封阀体处并且当所述密封阀体关闭所述第二开口时密封所述第一阀体的第二开口的密封构件，设置在所述第一阀 本体在其内壁部分离开第二开口处，并且当密封阀体从第二开口分离并移动时，将密封构件从第一阀体的内部空间屏蔽;以及第一枢转轴，用于枢转密封阀体和 将其定位在第一阀体的第二开口和阀门保护部分中的任一个上。

    게이트 밸브 및 반도체 제조 장치
    32.
    发明公开
    게이트 밸브 및 반도체 제조 장치 有权
    门阀和半导体制造设备

    公开(公告)号：KR1020090097802A

    公开(公告)日：2009-09-16

    申请号：KR1020090019837

    申请日：2009-03-09

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 고모토신지 ,  노자와토시히사

    IPC: H01L21/00

    CPC classification number: H01L21/67126 ,  Y10S251/90 ,  Y10S414/135

    Abstract: A gate valve and a manufacturing apparatus of a semiconductor are provided to improve availability ratio of a semiconductor manufacturing apparatus by preventing generation of a particle due to deterioration of a sealing member. A process is performed in a process room(10). A transfer room(8) transfers a substrate to be processed. A gate valve of a process room side opens and closes an opening part of the process room side. A sealing member seals a gap between the opening part of the process room and a valve body of the gate valve of the process room side. A gate valve(20) of a transfer room side opens and closes an opening part of a transfer room side. An insulating material(30) prevents thermal conduction between the gate valve of the process room side and the gate valve of the transfer room side.

    Abstract translation: 提供了一种闸阀和半导体制造装置，以通过防止由于密封件的劣化而产生颗粒而提高半导体制造装置的可用率。 在处理室（10）中执行处理。 转运室（8）转移待处理的基板。 处理室侧的闸阀打开和关闭处理室侧的开口部。 密封构件密封处理室的开口部分与处理室侧的闸阀的阀体之间的间隙。 转移室侧的闸阀（20）打开和关闭转移室侧的开口部。 绝缘材料（30）防止处理室侧的闸阀与转移室侧的闸阀之间的热传导。

    샤워 플레이트, 그의 제조 방법, 그 샤워 플레이트를 이용한 플라즈마 처리 장치, 플라즈마 처리 방법 및 전자 장치의 제조 방법
    33.
    发明公开
    샤워 플레이트, 그의 제조 방법, 그 샤워 플레이트를 이용한 플라즈마 처리 장치, 플라즈마 처리 방법 및 전자 장치의 제조 방법 有权
    与气体释放孔部件一体烧结的淋浴板及其制造方法

    公开(公告)号：KR1020090058004A

    公开(公告)日：2009-06-08

    申请号：KR1020097006561

    申请日：2007-09-26

    Applicant: 도쿄엘렉트론가부시키가이샤 ,  고쿠리츠 다이가쿠 호진 도호쿠 다이가쿠

    Inventor： 오케사쿠마사히로 ,  오오미타다히로 ,  고토테츠야 ,  마츠오카타카아키 ,  노자와토시히사 ,  이노쿠치아츠토시 ,  이시바시키요타카

    IPC: H01L21/31 ,  C23C16/455 ,  H01L21/316 ,  H01L21/3065

    CPC classification number: H01J37/3244 ,  C23C16/45565 ,  C23C16/45568 ,  H01J37/32192 ,  H01J37/32449 ,  H01J37/32477 ,  H01J37/3255

    Abstract: This invention provides a shower plate comprising gas release hole members (ceramic member or porous gas flow body) bonded by sintering integrally without any space and disposed, for plasma back flow prevention purposes, within vertical holes in a shower plate. The above constitution is advantageous in that the gas release member does not come off from the vertical holes during use of the shower plate, there is no variation in the amount of gas released from each vertical hole, the back flow of plasma can be more fully prevented, and plasma excitation with high efficiency can be realized. A shower plate (105) is disposed in a treatment chamber (102) in a plasma treatment apparatus, and plasma excitation gas is released into a treatment chamber (102) for generating plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 mum to 70 mum and/or a porous gas flow body having pores having a maximum diameter of not more than 75 mum in communication with each other in the gas flow direction are bonded by sintering integrally with the inside of each of a number of vertical holes (105) as a release path for plasma excitation gas.

    Abstract translation: 本发明提供了一种喷淋板，其包括气泡释放孔构件（陶瓷构件或多孔气体流动体），其通过一体地烧结而没有任何空间并且设置用于等离子体回流防止目的在淋浴板的垂直孔内。 上述结构的优点在于，在淋浴板使用期间气体释放构件不从垂直孔脱落，从每个垂直孔释放的气体量没有变化，等离子体的回流可以更完全 可以实现高效率的等离子体激发。 喷淋板（105）设置在等离子体处理装置的处理室（102）中，等离子体激发气体释放到用于产生等离子体的处理室（102）中。 具有直径为20〜70μm的多个气体释放孔和/或具有在气体流动方向上彼此连通的最大直径不大于75μm的孔的多孔气体流动体的陶瓷构件是： 通过与作为等离子体激发气体的释放路径的多个垂直孔（105）中的每一个的内部一体地烧结而结合。

    플라즈마 처리 장치
    35.
    发明公开
    플라즈마 처리 장치 无效
    等离子体加工设备

    公开(公告)号：KR1020080080414A

    公开(公告)日：2008-09-03

    申请号：KR1020087018474

    申请日：2007-01-26

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 티엔차이쫑 ,  노자와토시히사

    IPC: H01L21/205 ,  H01L21/3065

    CPC classification number: H01J37/32192 ,  H01J37/32477

    Abstract: Provided is a plasma treatment apparatus capable of preventing an unnecessary sticking film from being deposited in a treatment container using plasma. The plasma treatment apparatus (32) comprises a treatment container (34) having an opened ceiling portion (54a), side walls (34a) and a bottom portion (34b) and made internally evacuative, a placing bed (36) mounted in the treatment container (34) for placing a work (W) thereon, a ceiling plate (54) mounted gastight in the ceiling portion (54a) and made of a dielectric material for transmitting a microwave therethrough, a planar antenna member (58) mounted on the upper face of the ceiling plate (54) for introducing the microwave into the treatment container, microwave feeding means (60) for feeding the microwave to the planar antenna member, and gas introducing means (44) for introducing a necessary treatment gas, into the treatment container (34). This treatment container (34) is provided therein with film stick preventing means (78) made of a dielectric material and so extending from the ceiling plate (54) as to correspond to the portion, on which the unnecessary sticking film is easily deposited. The film stick preventing means (78) is made of a rod-shaped member (104).

    Abstract translation: 本发明提供一种等离子体处理装置，其能够防止不必要的粘贴膜沉积在使用等离子体的处理容器中。 等离子体处理装置（32）包括具有敞开的顶部（54a），侧壁（34a）和底部（34b）并被内部抽真空的处理容器（34），安装在处理中的放置床 用于在其上放置工件（W）的容器（34），气顶安装在天花板部分（54a）中并由用于透过微波的电介质材料制成的顶板（54），安装在其上的平面天线构件 用于将微波引入处理容器的顶板（54）的上表面，用于将微波馈送到平面天线构件的微波馈送装置（60）以及用于将必要的处理气体引入 处理容器（34）。 该处理容器（34）中设置有由电介质材料制成并且从顶板（54）延伸的薄膜棒防止装置（78），以便对应于不需要的粘贴膜容易沉积的部分。 胶片防止装置（78）由杆状构件（104）制成。

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