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公开(公告)号：KR1020110053041A
公开(公告)日：2011-05-19
申请号：KR1020090109837
申请日：2009-11-13
Applicant: 삼성모바일디스플레이주식회사
IPC: H01L29/786 , H01L51/50
CPC classification number: H01L29/66757 , H01L27/1277 , H01L27/3262 , H01L21/02304 , H01L21/32051
Abstract: PURPOSE: A thin film transistor, an organic electroluminescent display device including the same and manufacturing methods thereof are provided to improve the property of a semiconductor layer by controlling metal silicide due to metal catalyst. CONSTITUTION: A semiconductor layer includes one or more channel regions and a source/drain region on a buffer layer. A gate insulation layer is located on the substrate. A gate electrode(150) is located on the gate insulation layer. An interlayer insulation layer(160) is located on the substrate. Source and drain electrodes(170a,170b) are located on the interlayer insulation layer and are electrically connected to the semiconductor layer. A polycrystalline silicon layer of the channel region of the semiconductor layer includes only the low angle grain boundary. A high angle grain boundary is located on the region except the channel region of the semiconductor layer.
Abstract translation: 目的：提供薄膜晶体管，包括该薄膜晶体管的有机电致发光显示装置及其制造方法，以通过控制由于金属催化剂引起的金属硅化物来改善半导体层的性能。 构成：半导体层包括缓冲层上的一个或多个沟道区和源极/漏极区。 栅极绝缘层位于衬底上。 栅电极（150）位于栅极绝缘层上。 层间绝缘层（160）位于基板上。 源电极和漏电极（170a，170b）位于层间绝缘层上并与半导体层电连接。 半导体层的沟道区域的多晶硅层仅包含低角度晶界。 高角度晶界位于半导体层的沟道区域以外的区域。
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公开(公告)号：KR1020110039920A
公开(公告)日：2011-04-20
申请号：KR1020090096978
申请日：2009-10-12
Applicant: 삼성모바일디스플레이주식회사
Inventor： 양태훈 , 이기용 , 서진욱 , 박병건 , 정윤모 , 이동현 , 이길원 , 정재완 , 박종력 , 최보경 , 백원봉 , 소병수 , 홍종원 , 정민재 , 나흥열 , 마이단축이반 , 강유진 , 장석락
IPC: H01L21/203 , C23C14/34
CPC classification number: C23C14/34
Abstract: PURPOSE: A sputtering apparatus is provided to uniformly deposit metallic catalyst of very low density on a substrate by reducing the unevenness of a metallic catalyst which is deposited at the edge of the substrate. CONSTITUTION: In a sputtering apparatus, a metal target(120) is arranged in a reaction chamber. The area of the metal target is at least 1.3 times larger than that of the substrate mounted in a substrate holder. A substrate holder(130) is arranged to be faced with the metal target. A vacuum pump(140) is connected to the exhaust pipe of the reaction chamber. A first shield(160) controls the progressive direction of the metallic catalyst discharged from the metal target.
Abstract translation: 目的：提供一种溅射装置，通过减少沉积在基板边缘的金属催化剂的不均匀性，在基板上均匀沉积非常低密度的金属催化剂。 构成：在溅射装置中，金属靶（120）布置在反应室中。 金属靶的面积比安装在衬底保持器中的衬底的面积大至少1.3倍。 衬底保持器（130）布置成面对金属靶。 真空泵（140）连接到反应室的排气管。 第一屏蔽（160）控制从金属靶排出的金属催化剂的行进方向。
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公开(公告)号：KR1020110032283A
公开(公告)日：2011-03-30
申请号：KR1020090089698
申请日：2009-09-22
Applicant: 삼성모바일디스플레이주식회사
IPC: H01L21/205
CPC classification number: F17D1/02 , C23C16/4485 , C23C16/52 , Y10T137/0318
Abstract: PURPOSE: A source gas supplying unit, a deposition device having the same and a method thereof are provided to deposit a uniform thin by supplying a source gas to deposition chamber. CONSTITUTION: In a source gas supplying unit, a deposition device having the same and a method thereof, a source is stored in a canister(112). A heating portion heats the canister. A source gas supply tube(114) is formed in one side of the canister. A measuring unit is installed in the source gas supply tube and measures the amount of the source gas through a source gas supply tube. A temperature controller(116) is connected to a heating unit and the measuring unit. The temperature controller controls the heating unit according the amount of the source gas.
Abstract translation: 目的：提供源气体供给单元，具有该源气体供给单元的沉积装置及其方法，以通过向沉积室供应源气体来沉积均匀的薄膜。 构成：在源气体供给单元中，具有该源装置的沉积装置及其方法，源被存储在罐（112）中。 加热部分加热罐。 源气体供给管（114）形成在罐的一侧。 测量单元安装在源气体供应管中，并通过源气体供应管测量源气体的量。 温度控制器（116）连接到加热单元和测量单元。 温度控制器根据源气体的量控制加热单元。
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公开(公告)号：KR1020100020291A
公开(公告)日：2010-02-22
申请号：KR1020080079003
申请日：2008-08-12
Applicant: 삼성모바일디스플레이주식회사
IPC: H01L21/02 , H01L29/786
CPC classification number: F27D11/12 , F27B9/20 , F27B9/36 , F27D9/00 , H01L21/67115 , H01L21/67173 , H01L21/67248 , H01L21/6776 , H01L21/324
Abstract: PURPOSE: Inline thermal process equipment and a wafer thermal processing method using the same are provided to increase the crystallinity of polysilicon by rapidly heat-treating a substrate at a high temperature more than a strain point of substrate. CONSTITUTION: A rapid thermal anneal part comprises a rapid high temperature annealing unit(600), a heating source(610) and a second controller. The heating source is installed inside the rapid high temperature annealing unit. The second controller controls the temperature value of the heating source. The second controller controls the operation of the heating source in order to heat the substrate(10) with rapid annealing temperature value.
Abstract translation: 目的：提供在线热处理设备和使用其的晶片热处理方法，以通过在高于衬底的应变点的高温下快速热处理衬底来提高多晶硅的结晶度。 构成：快速热退火部件包括快速高温退火单元（600），加热源（610）和第二控制器。 加热源安装在快速高温退火单元的内部。 第二控制器控制加热源的温度值。 第二控制器控制加热源的操作，以便以快速退火温度值加热基板（10）。
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公开(公告)号：KR1020100001118A
公开(公告)日：2010-01-06
申请号：KR1020080060914
申请日：2008-06-26
Applicant: 삼성모바일디스플레이주식회사
IPC: H01L21/304 , H01L21/02
CPC classification number: H01L21/67207 , H01L21/67098
Abstract: PURPOSE: A substrate heat treatment system is provided to reduce a space and equipment by forming a chamber of a thermal treatment apparatus as a multi-layer structure without an additional transfer unit. CONSTITUTION: A heat treatment of substrate system comprises a thermal treatment unit(10) and a transfer unit(20). A thermal treatment unit includes at least one chamber(10a,10b,10c) with a heating unit(11a,11b,11c) for processing a substrate through thermal treatment. The transport unit is installed at the one side of the thermal treatment unit and supports the substrate before and after thermal treatment and transfers it. The chambers are deposited in a vertical direction, and the same process is performed in the chamber.
Abstract translation: 目的：提供一种基板热处理系统，通过在没有附加转印单元的情况下，形成多层结构的热处理设备的腔室来减少空间和设备。 构成：衬底系统的热处理包括热处理单元（10）和转移单元（20）。 热处理单元包括具有加热单元（11a，11b，11c）的至少一个腔室（10a，10b，10c），用于通过热处理来处理衬底。 运输单元安装在热处理单元的一侧，并在热处理之前和之后支撑基板并将其传送。 腔室沿垂直方向沉积，并且在腔室中执行相同的过程。
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Patent Agency Ranking
公开(公告)号：KR101146995B1
公开(公告)日：2012-05-22
申请号：KR1020100057111
申请日：2010-06-16
Applicant: 삼성모바일디스플레이주식회사
IPC: H01L21/20 , H01L29/786
CPC classification number: H01L29/66757 , H01L21/02422 , H01L21/02488 , H01L21/02491 , H01L21/02502 , H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L29/78609 , H01L29/78675
Abstract: A method of crystallizing a silicon layer and a method of manufacturing a TFT, the method of crystallizing a silicon layer including forming a catalyst metal layer on a substrate; forming a catalyst metal capping pattern on the catalyst metal layer; forming a second amorphous silicon layer on the catalyst metal capping pattern; and heat-treating the second amorphous silicon layer to form a polycrystalline silicon layer.
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37.发明授权박막 트랜지스터를 갖는 기판, 이를 제조하는 방법, 및 상기 박막 트랜지스터를 갖는 기판을 구비하는 유기 발광 표시 장치 有权薄膜晶体管基板及其制造方法以及具有薄膜晶体管基板的有机发光元件
公开(公告)号：KR101137391B1
公开(公告)日：2012-04-20
申请号：KR1020100026403
申请日：2010-03-24
Applicant: 삼성모바일디스플레이주식회사
IPC: H01L29/786 , H01L51/50 , H01L51/56
CPC classification number: H01L29/66742 , H01L27/124 , H01L27/1248 , H01L27/3262 , H01L27/3274 , H01L29/66757 , H01L29/78618 , H01L51/0081
Abstract: 본 발명의 일 실시예는 이온 도핑 공정없이도 제조할 수 있는 박막 트랜지스터를 갖는 기판, 이의 제조 방법, 및 상기 박막 트랜지스터를 갖는 기판을 구비하는 유기 발광 표시 장치를 제공하는 것이다.
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公开(公告)号：KR101117643B1
公开(公告)日：2012-03-05
申请号：KR1020100032337
申请日：2010-04-08
Applicant: 삼성모바일디스플레이주식회사
IPC: H01L29/786
CPC classification number: H01L21/02532 , H01L21/02488 , H01L21/02672 , H01L27/1277 , H01L29/66757 , H01L29/66765
Abstract: 본발명은비정질실리콘막의결정화방법, 그리고이를적용한박막트랜지스터의제조방법및 이에의해제조된박막트랜지스터에관한것이다. 본발명의실시예에따른결정화방법은, 비정질실리콘막을형성하는단계, 비정질실리콘막위에서로이격되도록결정화촉매입자들을위치시키는단계, 비정질실리콘막에서결정화촉매입자들을선택적으로제거하는단계및 비정질실리콘막을열처리에의해결정화하는단계를포함한다.
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公开(公告)号：KR101117739B1
公开(公告)日：2012-02-24
申请号：KR1020100022944
申请日：2010-03-15
Applicant: 삼성모바일디스플레이주식회사
IPC: H01L29/786
CPC classification number: H01L29/78645
Abstract: 온전류의 크기를 유지하면서 누설전류를 줄일 수 있는 박막 트랜지스터를 개시한다. 본 발명에 의한 박막 트랜지스터는 기판; 양끝단의 소스 영역 및 드레인 영역, 상기 소스 영역 또는 상기 드레인 영역에 인접한 저농도 도핑영역, 적어도 둘 이상의 채널영역, 상기 채널영역 사이의 고농도 도핑영역을 포함하는 상기 기판 위의 활성층; 상기 활성층 위의 게이트 절연막; 적어도 둘 이상의 개별 게이트 전극을 포함하고, 상기 개별 게이트 전극 아래에 채널영역이 위치하고, 최외각의 상기 개별 게이트 전극의 바깥쪽으로 상기 소스 영역 및 상기 드레인 영역이 위치한 상기 게이트 절연막 위의 다중 게이트 전극; 상기 다중 게이트 전극 위의 제1 층간 절연막; 및 상기 제1 층간 절연막을 관통하여 상기 소스 영역과 상기 드레인 영역에 각각 접촉하는 소스 전극 및 드레인 전극; 을 포함한다.
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公开(公告)号：KR1020110137086A
公开(公告)日：2011-12-22
申请号：KR1020100057111
申请日：2010-06-16
Applicant: 삼성모바일디스플레이주식회사
IPC: H01L21/20 , H01L29/786
CPC classification number: H01L29/66757 , H01L21/02422 , H01L21/02488 , H01L21/02491 , H01L21/02502 , H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L29/78609 , H01L29/78675
Abstract: PURPOSE: A method for forming a polycrystalline silicon layer and a method for forming a thin film transistor using the same are provided to control a leakage current and leakage current dissemination of the thin film transistor by controlling the location and number of a grain boundary within the polycrystalline silicon. CONSTITUTION: A buffer layer is formed on a substrate(S110). A catalyst metal layer is formed on the buffer layer(S120). A first amorphous silicon layer is formed on the catalyst metal layer(S130). A catalyst metal capping pattern is formed by patterning the first amorphous silicon layer(S140). The thermal process is executed in 300-500°C range. The catalyst metal layer which is formed on a domain except for the catalyst metal capping pattern is eliminated when patterning the first amorphous silicon layer. A second amorphous silicon layer is formed on the catalyst metal capping pattern and the buffer layer(S150). The second amorphous silicon layer is crystallized by a thermal process(S160).
Abstract translation: 目的：提供一种形成多晶硅层的方法和使用其形成薄膜晶体管的方法，用于通过控制薄膜晶体管的位置和数量来控制薄膜晶体管的漏电流和漏电流散布 多晶硅。 构成：在衬底上形成缓冲层（S110）。 在缓冲层上形成催化剂金属层（S120）。 在催化剂金属层上形成第一非晶硅层（S130）。 通过图案化第一非晶硅层形成催化剂金属覆盖图案（S140）。 热处理在300-500°C范围内执行。 在图案化第一非晶硅层时，除去形成在催化剂金属封盖图案之外的畴上的催化剂金属层被消除。 在催化剂金属覆盖图案和缓冲层上形成第二非晶硅层（S150）。 通过热处理使第二非晶硅层结晶（S160）。
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