公开(公告)号：KR101495803B1

公开(公告)日：2015-02-26

申请号：KR1020080130438

申请日：2008-12-19

Applicant: 삼성전자주식회사

Inventor： 박임수 ,  김영후 ,  홍창기 ,  이재동 ,  엄대홍 ,  김성준

IPC: H01L27/115 ,  H01L21/8247

CPC classification number: H01L27/11582 ,  H01L27/1157

Abstract: 3차원 구조의 비휘발성 메모리 장치의 제조 방법이 제공된다. 비휘발성 메모리 장치의 제조 방법은 반도체 기판 상에, 서로 다른 식각 선택비를 갖는 복수 개의 제 1 및 제 2 물질막들을 번갈아 적층하고, 복수 개의 제 1 및 제 2 물질막들을 관통하는 개구를 형성하고, 개구에 의해 노출된 제 1 물질막들을 제거하여, 개구로부터 반도체 기판과 수평한 방향으로 확장된 확장부들을 형성하고, 개구 및 확장부들의 표면을 따라 컨포말하게 전하 저장막을 형성하고, 제 2 물질막의 측벽에 형성된 전하 저장막을 제거하여, 전하 저장막 패턴들을 확장부 내에 국소적으로(locally) 형성하는 것을 포함한다.
3차원, 전하 저장막 패턴, 분리

公开(公告)号：KR1020100085743A

公开(公告)日：2010-07-29

申请号：KR1020090005193

申请日：2009-01-21

Applicant: 삼성전자주식회사

Inventor： 박임수 ,  이근택

IPC: H01L21/31 ,  H01L21/28

CPC classification number: H01L21/76804 ,  H01L21/0337 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/3212 ,  H01L21/76825 ,  H01L21/76831 ,  H01L27/1052 ,  H01L27/11517

Abstract: PURPOSE: A method for forming a pattern structure is provided to form a protection layer which prevents damage to a thin film pattern in a liquid process by using an incline ion implantation process. CONSTITUTION: A thin film pattern(120) with a depression(122) is formed on a substrate(110). An ion is implanted into the thin film pattern and a protection layer(130) is formed on the thin film pattern. The lower width of the depression increases by selectively etching the lower side of the thin film pattern by using the protection film as a mask.

Abstract translation: 目的：提供一种用于形成图案结构的方法以形成保护层，其通过使用倾斜离子注入工艺防止液体过程中的薄膜图案的损坏。 构成：在衬底（110）上形成具有凹陷（122）的薄膜图案（120）。 将离子注入到薄膜图案中，并且在薄膜图案上形成保护层（130）。 通过使用保护膜作为掩模来选择性地蚀刻薄膜图案的下侧，凹陷的较低宽度增加。

公开(公告)号：KR1020090004159A

公开(公告)日：2009-01-12

申请号：KR1020070068153

申请日：2007-07-06

Applicant: 삼성전자주식회사

Inventor： 이몽섭 ,  홍창기 ,  이근택 ,  강대혁 ,  박임수 ,  한동균 ,  손윤호

IPC: H01L29/78 ,  H01L21/265

CPC classification number: H01L21/28211 ,  H01L21/266 ,  H01L21/28176 ,  H01L21/324

Abstract: The method of forming the semiconductor device is provided to prevent the loss of dopant in the thermal process by forming the capping oxide covering the semiconductor substrate in which dopant is injected. The conductive pattern(114) is formed on the semiconductor substrate(100). The photoresist pattern exposing the semiconductor substrate adjacent to the conductive pattern is formed. The dopant is injected by using the conductive pattern and photoresist pattern as mask and then impurity regions (140a,140b) are formed in the semiconductor substrate. The photoresist pattern is removed. The capping oxide covering the semiconductor substrate is formed. The thermal process is performed on the substrate. The dopant is activated.

Abstract translation: 提供了形成半导体器件的方法，以通过形成覆盖其中注入掺杂剂的半导体衬底的覆盖氧化物来防止热处理中的掺杂剂的损失。 导电图案（114）形成在半导体衬底（100）上。 形成了暴露出与导电图案相邻的半导体衬底的光致抗蚀剂图案。 通过使用导电图案和光致抗蚀剂图案作为掩模来注入掺杂剂，然后在半导体衬底中形成杂质区域（140a，140b）。 去除光致抗蚀剂图案。 形成覆盖半导体衬底的覆盖氧化物。 在基板上进行热处理。 掺杂剂被激活。

公开(公告)号：KR1020030005777A

公开(公告)日：2003-01-23

申请号：KR1020010041229

申请日：2001-07-10

Applicant: 삼성전자주식회사

Inventor： 고형호 ,  이근택 ,  박임수 ,  한용필 ,  하상록

IPC: H01L21/304

CPC classification number: H01L21/02074 ,  B08B3/08 ,  C02F1/4618 ,  C02F2001/46161 ,  C02F2001/46195 ,  C02F2103/04 ,  C02F2201/46115 ,  C02F2201/4617 ,  C02F2209/04 ,  C02F2209/06 ,  C11D7/08 ,  C11D11/0047

Abstract: PURPOSE: A semiconductor cleaning process using electrolytic ionized water and diluted HF solution is provided to prevent a damage of a low dielectric layer by processing electrolytic ionized water and HF and diluted HF solution, simultaneously. CONSTITUTION: An anode room(30), a cathode room(40), and an intermediate room(50) are divided by the first and the second ion exchange membranes(10,20). The first ion exchange membrane(10) is formed with a negative ion exchange membrane(10a) and a fluoric ion exchange membrane(10b). The second ion exchange membrane(20) is formed with a positive ion exchange membrane(20a) and a negative ion exchange membrane(20b). A plurality of pin holes are uniformly formed on the fluoric ion exchange membrane(10b) in order to shift dissociated negative ions of the intermediate room(50) to the anode room(30). The pin holes are uniformly formed on the negative ion exchange membrane(20b) in order to shift dissociated positive ions of the intermediate room(50) to the cathode room(40). An anode electrode(60) and a cathode electrode(70) are installed at the anode room(30) and the cathode room(40), respectively. Deionized water is provided to the anode room(30) and the cathode room(40) through the first and the second injection tubes(80,90). The electrolytic solution is provided to the intermediate room(50) through the third injection tube(100). The anode water of the anode room(30) is drained to the first cleaning device(150) through the first drain tube(120). The cathode water of the cathode room(40) is drained to the second cleaning device(160) through the second drain tube. An HF supply tube(200) is connected with the first and the second cleaning devices(150,160).

Abstract translation: 目的：提供使用电解电离水和稀释HF溶液的半导体清洁工艺，以同时处理电解电离水和HF和稀释的HF溶液来防止低介电层的损坏。 构成：阳极室（30），阴极室（40）和中间室（50）由第一和第二离子交换膜（10,20）分开。 第一离子交换膜（10）由负离子交换膜（10a）和氟离子交换膜（10b）形成。 第二离子交换膜（20）由正离子交换膜（20a）和负离子交换膜（20b）形成。 在氟离子交换膜（10b）上均匀地形成多个针孔，以将中间室（50）的离解的负离子移动到阳极室（30）。 针孔在负离子交换膜（20b）上均匀地形成，以便将中间室（50）的解离的正离子移动到阴极室（40）。 阳极电极（60）和阴极电极（70）分别安装在阳极室（30）和阴极室（40）。 去离子水通过第一和第二注入管（80,90）提供给阳极室（30）和阴极室（40）。 电解液通过第三注入管（100）提供给中间室（50）。 阳极室（30）的阳极水通过第一排水管（120）排入第一清洗装置（150）。 阴极室（40）的阴极水通过第二排水管排入第二清洗装置160。 HF供应管（200）与第一和第二清洁装置（150,160）连接。

公开(公告)号：KR1020020030410A

公开(公告)日：2002-04-25

申请号：KR1020000061026

申请日：2000-10-17

Applicant: 삼성전자주식회사

Inventor： 이근택 ,  박임수 ,  고형호 ,  하상록

IPC: H01L21/304

Abstract: PURPOSE: An apparatus for generating electrolyzed ionic water is to provide a cleaning process not affected by metal ions inherent in the electrolyzed ionic water, by installing a detector for detecting the density of metal ions and a controller for preventing the electrolyzed ionic water from being supplied to a cleaning apparatus when the density of the metal ions exceeds a predetermined quantity. CONSTITUTION: The apparatus for generating electrolyzed ionic water individually generates and exhausts reductive electrolyzed ionic water and oxidative electrolyzed ionic water. A withdrawing part(210) withdraws a part of the electrolyzed ionic water exhausted from the electrolyzed ionic water generating apparatus and sends the electrolyzed ionic water to the detector(216). The detector detects the density of the metal ions inherent in the electrolyzed ionic water withdrawn from the withdrawing part. The controller(220) stops generation of the electrolyzed ionic water or prevents the electrolyzed ionic water from being supplied to the cleaning apparatus(214), connected to the detector.

Abstract translation: 目的：一种用于产生电解离子水的设备是通过安装用于检测金属离子密度的检测器和用于防止电解离子水供应的控制器来提供不受电解离子水固有的金属离子影响的清洗过程 当金属离子的密度超过预定量时，到清洁装置。 构成：用于产生电解离子水的装置单独产生和排出还原电解离子水和氧化电解离子水。 取出部（210）从电解离子水生成装置排出的一部分电解离子水中取出并将电解离子水送到检测器（216）。 检测器检测从抽出部分抽出的电解离子水中固有的金属离子的密度。 控制器（220）停止生成电解离子水，或者防止电解离子水供给到与检测器连接的清洁装置（214）。

公开(公告)号：KR1020020019675A

公开(公告)日：2002-03-13

申请号：KR1020000052661

申请日：2000-09-06

Applicant: 삼성전자주식회사

Inventor： 박임수 ,  이근택 ,  권영민 ,  하상록 ,  심우관 ,  고형호

IPC: H01L21/30

CPC classification number: C02F1/4618 ,  C02F2001/46161 ,  C02F2201/46115 ,  C02F2201/46145 ,  C02F2209/04 ,  C02F2209/06 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/02071 ,  H01L21/02074 ,  Y02E60/366

Abstract: PURPOSE: A wet etch process for fabricating a semiconductor using anode water including an oxide or cathode water including a reductant and anode water and cathode water used for the same are provided to produce anode water including an oxide and cathode water including a reductant by using the small amount of electrolyte. CONSTITUTION: An electrolytic device(1) has an anode room(30), a cathode room(40), and an intermediate room(50). The anode room(30), the cathode room(40), and the intermediate room(50) are separated by ion-exchange films(10,20). The ion-exchange film(10) is installed in the anode room(30). The ion-exchange film(10) is formed with a negative ion-exchange film(10a) and a fluoric positive ion-exchange film(10b). The ion-exchange film(20) is installed in the cathode room(40). The ion-exchange film(20) is formed with a positive ion-exchange film(20a) and a negative ion-exchange film(20b). Pin holes are formed uniformly on the fluoric positive ion-exchange film(10b) and the negative ion-exchange film(20b). An anode electrode(60) and a cathode electrode(70) are installed in the cathode room(40). Ionized water is supplied to the anode room(30) and the cathode room(40) through the first and the second injection tubes(80,90). An electrolyte is supplied to the intermediate room(50) through the third injection tube(100). Anode water including an oxide is supplied to the first wet process device(150). Cathode water including a reductant is supplied to the second wet process device(160).

Abstract translation: 目的：提供一种用于制造半导体的湿式蚀刻工艺，该方法使用包括还原剂和阳极水和阴极水的氧化物或阴极水的阳极水，该氧化物或阴极水用于生产含有氧化物和阴极水的阳极水，所述氧化物和阴极水通过使用还原剂 少量电解液。 构成：电解装置（1）具有阳极室（30），阴极室（40）和中间室（50）。 阳极室（30），阴极室（40）和中间室（50）由离子交换膜（10,20）分离。 离子交换膜（10）安装在阳极室（30）中。 离子交换膜（10）由负离子交换膜（10a）和氟正离子交换膜（10b）形成。 离子交换膜（20）安装在阴极室（40）中。 离子交换膜（20）由正离子交换膜（20a）和负离子交换膜（20b）形成。 针孔在氟正离子交换膜（10b）和负离子交换膜（20b）上均匀地形成。 阳极电极（60）和阴极电极（70）安装在阴极室（40）中。 离子水通过第一和第二注入管（80,90）供应到阳极室（30）和阴极室（40）。 通过第三注入管（100）向中间室（50）供给电解质。 将包含氧化物的阳极水供给到第一湿式处理装置（150）。 包含还原剂的阴极水被供应到第二湿法处理装置（160）。

公开(公告)号：KR100327349B1

公开(公告)日：2002-03-06

申请号：KR1020010064778

申请日：2001-10-19

Applicant: 삼성전자주식회사

Inventor： 정승필 ,  장규환 ,  이선정 ,  이근택 ,  박임수 ,  이광욱 ,  이문희

IPC: H01L21/31

Abstract: 반도체소자의이중게이트산화막형성방법을개시한다. 본발명에따르면산화막을플라즈마상태의수소가스및 불소를포함하는가스와화학적으로반응시킨후, 어닐링을실시하여상기화학적반응에의해생성된부산물을기화시키는공정을상기산화막이완전히식각될때 까지반복하여진행하는단계를포함함으로써, 산화막의하부막질을손상시키거나오염시키지않으면서도높은식각선택비를갖고산화막을패터닝하여반도체소자의이중게이트산화막을형성할수 있다.

公开(公告)号：KR1020000008156A

公开(公告)日：2000-02-07

申请号：KR1019980027868

申请日：1998-07-10

Applicant: 삼성전자주식회사

Inventor： 박임수 ,  이근택

IPC: H01L21/28

Abstract: PURPOSE: A method of forming silicide is provided to improve the adhesion property of silicon oxide revealed in the silicide making process. CONSTITUTION: The method of forming silicide comprises the steps of forming silicon oxide on a silicon substrate, forming titanium nitride on the silicon oxide, forming contact hole by patterning the titanium nitride and silicon oxide, forming metal layer for silicide on the whole substrate including the contact hole, doing thermal process in nitrogen gas condition to form metal silicide on the bottom of the contact hole and to suppress the reaction between the silicon oxide and the metal, riding the titanium nitride and other matter layer on the formed silicide layer and oxide layer. The metal layer may be titanium and in the riding step, sulfuric acid and H2O2 may be used.

Abstract translation: 目的：提供一种形成硅化物的方法，以改善在硅化物制备过程中显示的氧化硅的粘合性能。 构成：形成硅化物的方法包括在硅衬底上形成氧化硅的步骤，在氧化硅上形成氮化钛，通过图案化氮化钛和氧化硅形成接触孔，在整个衬底上形成用于硅化物的金属层，包括 接触孔，在氮气条件下进行热处理以在接触孔的底部形成金属硅化物，并抑制氧化硅和金属之间的反应，在所形成的硅化物层和氧化物层上骑氮化钛等物质层 。 金属层可以是钛，并且在搭载步骤中，可以使用硫酸和H 2 O 2。

公开(公告)号：KR1019980073955A

公开(公告)日：1998-11-05

申请号：KR1019970009556

申请日：1997-03-20

Applicant: 삼성전자주식회사

Inventor： 박임수 ,  송재인 ,  박흥수

IPC: H01L21/304

Abstract: 반도체 제조 장치의 세정조에 대해 기재되어 있다. 이는, 그릇 모양의 베스와, 베스의 하단부에 설치되며 상부 구멍들과 하부 구멍들 또는 상부 구멍들과 하부 이격부들이 서로 정렬되도록 배치된 두 개이상의 정류판들, 및 상부 구멍 또는 상부 이격부의 정확히 한가운데에 위치하는 웨이퍼들을 구비한다. 이때, 구멍의 크기와 구멍과 이격부의 크기는 각각 3㎜이하이다. 따라서, 본 발명에 의하면, 웨이퍼들 사이로 통과하는 탈이온수의 양을 늘릴 수 있으므로 웨이퍼의 세정효율을 높일 수 있다.

公开(公告)号：KR1019980026092A

公开(公告)日：1998-07-15

申请号：KR1019960044417

申请日：1996-10-07

Applicant: 삼성전자주식회사

Inventor： 박임수 ,  이강욱

IPC: H01L21/304

Abstract: 본 발명은 웨이퍼 세정 장치에 대해 기재되어 있다.
상기 웨이퍼 세정 장치는 세정조(Bath); 및 상기 세정조의 밑면에서 세정액을 공급하는 다수개의 Y자형 공급관을 구비함으로써, 세정조 내의 모든 웨이퍼에 균일한 유량 및 유속의 세정액을 공급할 수 있으므로 웨이퍼의 세정 효과를 보다 더 증가시킬 수 있다.