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31.发明公开
公开(公告)号：EP2688688A4
公开(公告)日：2014-12-31
申请号：EP12760859
申请日：2012-02-28
Applicant: BASF SE
Inventor： KLIPP ANDREAS , RAMAN VIJAY IMMANUEL , VENKATARAMAN SHYAM SUNDAR , MELLIES RAIMUND , ZHONG MINGJIE
CPC classification number: H01L21/02074 , C11D1/662 , C11D1/72 , C11D1/721 , C11D1/722 , C11D1/825 , C11D3/0073 , C11D3/2041 , C11D3/2065 , C11D3/2082 , C11D3/3757 , C11D11/0047 , G03F7/422 , G03F7/426
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32.发明公开METHOD FOR MANUFACTURING INTEGRATED CIRCUIT DEVICES, OPTICAL DEVICES, MICROMACHINES AND MECHANICAL PRECISION DEVICES HAVING PATTERNED MATERIAL LAYERS WITH LINE-SPACE DIMENSIONS OF 50 NM AND LESS 审中-公开方法的集成电路器件的光学器件，微型机械和机械装置采用精密结构材料层，50纳米或更小尺寸领先
公开(公告)号：EP2686737A4
公开(公告)日：2014-09-03
申请号：EP12761512
申请日：2012-02-29
Applicant: BASF SE
Inventor： KLIPP ANDREAS , OETTER GÜNTER , MONTERO PANCERA SABRINA , HONCIUC ANDREI , BITTNER CHRISTIAN
CPC classification number: H01L21/3083 , G03F7/2041 , G03F7/322 , G03F7/405
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公开(公告)号：MY177445A
公开(公告)日：2020-09-15
申请号：MYPI2010005095
申请日：2009-05-20
Applicant: BASF SE
Inventor： WAGNER NORBERT , KLIPP ANDREAS , ZAGAR CYRILL , FECHTENKOTTER ANDREAS , PENG CHIH-CHENG , SHIH CHIEN HSUEH STEVE , SUJANDI SUJANDI
Abstract: The present invention concerns a method of making a porous material comprising the following steps in the order a-b-c-d: (a) reacting at least one organosilane (A} with water in the presence of a solvent (C) to form a polymeric material, (b) subjecting said polymeric material to a first heat treatment, (c) bringing said polymeric material into contact with at least one dehydroxylation (d) agent (D), (e) subjecting said polymeric material to electromagnetic radiation and/or to a further heat treatment. The present invention furthermore concerns the porous material obtainable by the inventive method, semiconductor devices and electronic components comprising said porous material, and the use of said material for electrical insulation and in microelectronic devices, membranes. displays and sensors.
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公开(公告)号：RU2578718C2
公开(公告)日：2016-03-27
申请号：RU2013106936
申请日：2011-07-12
Applicant: BASF SE
Inventor： MELLIS RAJMUND , KLIPP ANDREAS
Abstract: Настоящееизобретениеотноситсяк воднойщелочнойочищающейкомпозиции, свободнойоторганическихрастворителейи силикатов, свободныхотионовметаллов, причемуказаннаякомпозициясодержит: (A) от 0,1 до 20 мас. % L-цистеина, (B) от 0,1 до 20 мас. % поменьшеймереодногогидроксидчетвертичногоаммония, (C) от 0,05 до 15 мас. % поменьшеймереодногохелатирующегои/илиингибирующегокоррозиюагента, выбранногоизгруппы, состоящейизалифатическихи циклоалифатическихаминов, имеющихпоменьшеймередвепервичныеаминогруппы, (D) от 0,001 до 5 мас. % поменьшеймереодногонеионногоповерхностно-активноговещества, выбранногоизгруппыацетиленовыхспиртов, алкилоксилированныхацетиленовыхспиртови алкилоксилированныхсложныхмоноэфировсорбитаи одноосновнойкарбоновойкислоты. Такженастоящееизобретениеотноситсяк способуобработкиподложеки кприменениюводнойщелочнойочищающейкомпозициидляобработкиподложек. Техническимрезультатомнастоящегоизобретенияявляетсясозданиекомпозиции, котораянаиболееэффективноудаляетвсевидыостаткови загрязнений, образованныхв ходеподготовкиповерхностиподложки, осаждения, нанесениягальваническогопокрытия, травленияи химико-механическойполировки. 3 н. 9 з.п. ф-лы, 8 пр., 1 табл.
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35.发明专利
公开(公告)号：SG11201600138XA
公开(公告)日：2016-02-26
申请号：SG11201600138X
申请日：2014-07-01
Applicant: BASF SE
Inventor： REICHARDT ROBERT , KALLER MARTIN , LAUTER MICHAEL , LI YUZHUO , KLIPP ANDREAS
IPC: C09G1/02 , C09G1/00 , C09G1/04 , H01L21/02 , H01L21/321
Abstract: A chemical-mechanical polishing (CMP) composition is provided comprising (A) one or more compounds selected from the group of benzotriazole derivatives which act as corrosion inhibitors and (B) inorganic particles, organic particles, or a composite or mixture thereof. The invention also relates to the use of certain compounds selected from the group of benzotriazole derivatives as corrosion inhibitors, especially for increasing the selectivity of a chemical mechanical polishing (CMP) composition for the removal of tantalum or tantalum nitride from a substrate for the manufacture of a semiconductor device in the presence of copper on said substrate.
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Patent Agency Ranking
公开(公告)号：SG11201504607QA
公开(公告)日：2015-07-30
申请号：SG11201504607Q
申请日：2013-12-04
Applicant: BASF SE
Inventor： KLIPP ANDREAS , HONCIUC ANDREI , OETTER GÜNTER , BITTNER CHRISTIAN
IPC: H01L21/027
Abstract: In a method of treating a substrate including patterns having line-space dimensions of 50 nm or below, the substrate is rinsed by an aqueous composition including at least one non-ionic surfactant A and at least one hydrophobizer B. The at least one surfactant A has an equilibrium surface tension of 10 mN/m to 35 mN/m, determined from a solution of the at least one surfactant A in water at the critical micelle concentration. The hydrophobizer B is selected so that the contact angle of water to the substrate is increased by contacting the substrate with a solution of the hydrophobizer B in water by 5-95° compared to the contact angle of water to the substrate before such contacting.
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公开(公告)号：SG186294A1
公开(公告)日：2013-02-28
申请号：SG2012091146
申请日：2011-07-12
Applicant: BASF SE
Inventor： MELLIES RAIMUND , KLIPP ANDREAS
Abstract: Aqueous alkaline cleaning composition free from organic solvents and metal ion-free silicates, the said compositions comprising (A) a thioamino acid having at least one primary amino group and at least one mercapto group, (B) a quaternary ammonium hydroxide, (C) a chelating and/or corrosion inhibiting agent selected from the group consisting of aliphatic and cycloaliphatic amines having at least two primary amino groups, and aliphatic and cycloaliphatic amines having at least one hydroxy group, (D) a nonionic surfactant selected from the group of acetylenic alcohols, alkyloxylated acetylenic alcohols and alkyloxylated sorbitan monocarboxylic acid mono esters; the use of the alkaline cleaning composition for the processing of substrates useful for fabricating electrical and optical devices; and a method for processing substrates useful for fabricating electrical and optical devices making use of the said aqueous alkaline cleaning composition.
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公开(公告)号：SG177755A1
公开(公告)日：2012-03-29
申请号：SG2012005443
申请日：2010-07-26
Applicant: BASF SE
Inventor： CHEN CHIENSHIN , SHEN MEICHIN , CHAN CHIAHAO , KLIPP ANDREAS
Abstract: The present invention relates to a substantially water-free photoresist stripping composition. Particularly, the present invention relates to a substantially water-free photoresist stripping composition useful in removing the photoresist after ion-implant process, comprising: (a) an amine, (b) an organic solvent A, and (c) a co-solvent, wherein the composition is substantially water-free (
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公开(公告)号：MY185453A
公开(公告)日：2021-05-19
申请号：MYPI2012000352
申请日：2010-07-26
Applicant: BASF SE
Inventor： KLIPP ANDREAS , CHEN CHIENSHIN , SHEN MEICHIN , CHAN CHIAHAO
Abstract: The present invention relates to a substantially water-free photoresist stripping compo-sition. Particularly, the present invention relates to a substantially water-free photore-sist stripping composition useful in removing the photoresist after ion-implant process, comprising: (a) an amine, (b) an organic solvent A, and (c) a co-solvent, wherein the composition is substantially water-free (
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公开(公告)号：SG11202008782WA
公开(公告)日：2020-10-29
申请号：SG11202008782W
申请日：2019-03-25
Applicant: BASF SE
Inventor： HOOGBOOM JOANNES THEODORUS VALENTINUS , KLIPP ANDREAS , KE JHIH JHENG , CHENG YI PING
IPC: G03F7/42
Abstract: Described herein is a cleaning composition for post-etch or post-ash residue removal from the surface of a semiconductor substrate and a corresponding use of said cleaning composition. Further described is the use of said cleaning composition in combination with one or more oxidants, e.g. for oxidative etching or partial oxidative etching of a layer or mask, comprising or consisting of TiN, preferably in the presence of a tungsten material, on the surface of a semiconductor substrate, and/or for post-etch or post-ash residue removal from the surface of a semiconductor substrate. Moreover, it is described a wet-etch composition comprising the cleaning composition of the present invention and one or more oxidants, the use of said wet-etch composition for oxidative etching or partial oxidative etching of a layer or mask, comprising or consisting of TiN, preferably in the presence of a tungsten material, on the surface of a semiconductor substrate, and/or for post-etch or post-ash residue removal from the surface of a semiconductor substrate, a process for the manufacture of a semiconductor device from a semiconductor substrate using said wet-etch composition and a kit comprising the cleaning composition of the present invention and one or more oxidants. Furthermore, it is described the use of an imidazolidinethione in a composition for etching or partially etching of a layer or mask on the surface of a semiconductor substrate and/or for cleaning a semiconductor substrate.
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