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公开(公告)号:US20140070250A1
公开(公告)日:2014-03-13
申请号:US13856220
申请日:2013-04-03
Applicant: Epistar Corporation
Inventor: Shih-I CHEN , Tsung-Xian LEE , Yi-Ming CHEN , Wei-Yu CHEN , Ching- Pei LIN , Min-Hsun HSIEH , Cheng-Nan HAN , Tien-Yang WANG , Hsing-Chao CHEN , Hsin-Mao LIU , Zong-Xi CHEN , Tzu-Chieh HSU , Chien-Fu HUANG , Yu-Ren PENG
IPC: H01L33/50
CPC classification number: H01L33/502 , H01L25/0753 , H01L33/44 , H01L33/505 , H01L2924/0002 , H01L2924/00
Abstract: A light-emitting device of an embodiment of the present application comprises a substrate; a first semiconductor light-emitting structure formed on the substrate, wherein the first semiconductor light-emitting structure comprises a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type and a first active layer formed between the first semiconductor layer and the second semiconductor layer, wherein the first active layer is capable of emitting a first light having a first dominant wavelength; and a first thermal-sensitive layer formed on a path of the first light, wherein the first thermal-sensitive layer comprises a material characteristic which varies with a temperature change.
Abstract translation: 本申请的实施方式的发光装置包括:基板; 形成在所述基板上的第一半导体发光结构,其中所述第一半导体发光结构包括具有第一导电类型的第一半导体层,具有第二导电类型的第二半导体层和形成在所述第一半导体层之间的第一有源层 层和第二半导体层,其中第一有源层能够发射具有第一主波长的第一光; 以及形成在所述第一光的路径上的第一热敏层,其中所述第一热敏层包括随温度变化而变化的材料特性。
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公开(公告)号:US20230335695A1
公开(公告)日:2023-10-19
申请号:US18338815
申请日:2023-06-21
Applicant: EPISTAR CORPORATION
Inventor: Min-Hsun HSIEH , Hsin-Mao LIU , Ying-Yang SU
IPC: H01L33/58 , H01L25/075 , H01L33/50 , H01L27/15 , H01L33/60
CPC classification number: H01L33/58 , H01L25/0753 , H01L33/505 , H01L27/156 , H01L33/60 , H01L24/29
Abstract: A light-emitting device includes a light-emitting element having a first-type semiconductor layer, a second-type semiconductor layer, an active stack between the first-type semiconductor layer and the second-type semiconductor layer, a bottom surface, and a top surface. A first electrode is disposed on the bottom surface and electrically connected to the first-type semiconductor layer. A second electrode is disposed on the bottom surface and electrically connected to the second-type semiconductor layer. A supporting structure is disposed on the top surface. The supporting structure has a thickness and a maximum width. A ratio of the maximum width to the thickness is of 2-150.
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公开(公告)号:US20220310555A1
公开(公告)日:2022-09-29
申请号:US17838307
申请日:2022-06-13
Applicant: EPISTAR CORPORATION
Inventor: Min-Hsun HSIEH , Shih-An LIAO , Ying-Yang SU , Hsin-Mao LIU , Tzu-Hsiang WANG , Chi-Chih PU
IPC: H01L23/00 , H01L25/16 , H01L25/075 , H01L23/498 , B23K26/22
Abstract: Disclosed is a die-bonding method which provides a target substrate having a circuit structure with multiple electrical contacts and multiple semiconductor elements each semiconductor element having a pair of electrodes, arranges the multiple semiconductor elements on the target substrate with the pair of electrodes of each semiconductor element aligned with two corresponding electrical contacts of the target substrate, and applies at least one energy beam to join and electrically connect the at least one pair of electrodes of every at least one of the multiple semiconductor elements and the corresponding electrical contacts aligned therewith in a heating cycle by heat carried by the at least one energy beam in the heating cycle. The die-bonding method delivers scattering heated dots over the target substrate to avoid warpage of PCB and ensures high bonding strength between the semiconductor elements and the circuit structure of the target substrate.
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公开(公告)号:US20210288232A1
公开(公告)日:2021-09-16
申请号:US17332378
申请日:2021-05-27
Applicant: EPISTAR CORPORATION
Inventor: Min-Hsun HSIEH , Hsin-Mao LIU , Ying-Yang SU
Abstract: A light-emitting device includes a light-emitting element having a first-type semiconductor layer, a second-type semiconductor layer, an active stack between the first-type semiconductor layer and the second-type semiconductor layer, a bottom surface, and a top surface. A first electrode is disposed on the bottom surface and electrically connected to the first-type semiconductor layer. A second electrode is disposed on the bottom surface and electrically connected to the second-type semiconductor layer. A supporting structure is disposed on the top surface. The supporting structure has a thickness and a maximum width. A ratio of the maximum width to the thickness is of 2˜150.
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公开(公告)号:US20210226101A1
公开(公告)日:2021-07-22
申请号:US17220343
申请日:2021-04-01
Applicant: EPISTAR CORPORATION
Inventor: Min-Hsun HSIEH , Cheng-Nan HAN , Steve Meng-Yuan HONG , Hsin-Mao LIU , Tsung-Xian LEE
Abstract: An embodiment of the invention discloses an optoelectronic system comprising a plurality of optoelectronic elements, wherein each of the plurality of optoelectronic elements comprises a semiconductor epitaxial layer, a first electrode, a second electrode, a top surface, a bottom surface, and a plurality of lateral surfaces arranged between the top surface and the bottom surface; a layer covering the plurality of lateral surfaces and comprising a side surface; and a reflecting structure having a shape of pyramid, formed between two adjacent optoelectronic elements of the plurality of optoelectronic elements and electrically separated from the plurality of optoelectronic elements, wherein the reflecting structure is configured to reflect light from the two adjacent optoelectronic elements upwards to leave the optoelectronic system.
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公开(公告)号:US20210222861A1
公开(公告)日:2021-07-22
申请号:US17153050
申请日:2021-01-20
Applicant: EPISTAR CORPORATION
Inventor: Min-Hsun HSIEH , Ying-Yang SU , Shih-An LIAO , Hsin-Mao LIU , Tzu-Hsiang WANG , Chi-Chih PU
IPC: F21V23/00 , H01L25/075 , H01L25/16 , H01L33/62
Abstract: A light-emitting device includes a first light-emitting module, a second light-emitting module, a conductive layer and an insulation layer. The first light-emitting module includes a first substrate having a first cavity, a first sidewall, and a light-emitting component disposed on the first substrate. The second module includes a second substrate having a second cavity corresponding to the first cavity and a second sidewall corresponding to the first sidewall. The conductive layer is directly connected to the first cavity and the second cavity and electrically connect the first light-emitting module and the second light-emitting module. The insulation layer is directly connected to the first sidewall and the second sidewall.
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公开(公告)号:US20190221728A1
公开(公告)日:2019-07-18
申请号:US16250774
申请日:2019-01-17
Applicant: EPISTAR CORPORATION
Inventor: Jen-Chieh YU , Yih-Hua RENN , Hsin-Mao LIU , Lung-Kuan LAI , Ching-Tai CHENG
CPC classification number: H01L33/507 , H01L25/13 , H01L33/58
Abstract: An embodiment of present disclosure discloses a light-emitting device which includes a first light-emitting unit, a second light-emitting unit, a first optic structure, a second optic structure, a first light-transmitting structure, a second light-transmitting structure, and a light-blocking structure. The first optic structure covers a top surface and a side surface of the first light-emitting unit, the second optic structure covers a top surface and a side surface of the second light-emitting unit. The first light-transmitting structure covers the first optic structure. The second light-transmitting structure covers the second optic structure. The light-blocking structure surrounds the first light-emitting unit and the second light-emitting unit, and covers the side surfaces of the first optic structure, the second optic structure, the first light-transmitting structure and the second light-transmitting structure.
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公开(公告)号:US20180254391A1
公开(公告)日:2018-09-06
申请号:US15973091
申请日:2018-05-07
Applicant: Epistar Corporation
Inventor: Cheng-Nan HAN , Tsung-Xian LEE , Min-Hsun HSIEH , Hung-Hsuan CHEN , Hsin-Mao LIU , Hsing-Chao CHEN , Ching-San TAO , Chih-Peng NI , Tzer- Perng CHEN , Jen-Chau WU
CPC classification number: H01L33/58 , H01L24/19 , H01L24/20 , H01L24/97 , H01L33/20 , H01L33/38 , H01L33/44 , H01L33/46 , H01L33/486 , H01L2933/0016
Abstract: The disclosure discloses an optoelectronic element comprising: an optoelectronic unit comprising a first metal layer, a second metal layer, and an outermost lateral surface; an insulating layer having a first portion overlapping the optoelectronic unit and extending beyond the lateral surface, and a second portion separated from the first portion in a cross-sectional view; and a first conductive layer formed on the insulating layer.
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公开(公告)号:US20180019382A9
公开(公告)日:2018-01-18
申请号:US14858477
申请日:2015-09-18
Applicant: EPISTAR CORPORATION
Inventor: Cheng-Nan HAN , Tsung-Xian LEE , Min-Hsun HSIEH , Hung-Hsuan CHEN , Hsin-Mao LIU , Hsing-Chao CHEN , Ching San TAO , Chih-Peng NI , Tzer-Perng CHEN , Jen-Chau WU , Masafumi SANO , Chih-Ming WANG
CPC classification number: H01L33/502 , H01L21/568 , H01L33/38 , H01L33/387 , H01L33/44 , H01L33/46 , H01L33/50 , H01L33/54 , H01L33/58 , H01L33/62 , H01L33/647 , H01L2224/04105 , H01L2224/19 , H01L2224/32245 , H01L2224/48091 , H01L2224/73265 , H01L2224/73267 , H01L2224/9222 , H01L2933/005 , H01L2933/0066 , H01L2924/00014
Abstract: An optoelectronic element includes an optoelectronic unit, a first metal layer, a second metal layer, a conductive layer and a transparent structure. The optoelectronic unit has a central line in a top view, a top surface, and a bottom surface. The second metal layer is formed on the top surface, and has an extension portion crossing over the central line and extending to the first metal layer. The conductive layer covers the first metal layer and the extension portion. The transparent structure covers the bottom surface without covering the top surface.
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公开(公告)号:US20170117450A1
公开(公告)日:2017-04-27
申请号:US15401710
申请日:2017-01-09
Applicant: EPISTAR CORPORATION
Inventor: Shih-I CHEN , Chia-Liang HSU , Tzu-Chieh HSU , Han-Min WU , Ye-Ming HSU , Chien-Fu HUANG , Chao-Hsing CHEN , Chiu-Lin YAO , Hsin-Mao LIU , Chien-Kai CHUNG
IPC: H01L33/62 , H01L25/075 , H01L33/42 , H01L33/60 , H01L33/38
CPC classification number: H01L33/62 , H01L25/0753 , H01L27/15 , H01L33/08 , H01L33/10 , H01L33/145 , H01L33/32 , H01L33/382 , H01L33/385 , H01L33/40 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/483 , H01L33/60 , H01L2924/0002 , H01L2924/00
Abstract: A light-emitting device comprising: a supportive substrate; a transparent layer formed on the supportive substrate, and the transparent layer comprising conductive metal oxide material; a light-emitting stacked layer comprising an active layer formed on the transparent layer; and an etching-stop layer formed between the light-emitting stacked layer and the supportive substrate and contacting the transparent layer, wherein a thickness of the etching-stop layer is thicker than that of the transparent layer.
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