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    Electron Source
    31.
    发明申请
    Electron Source 审中-公开

    公开(公告)号：US20190049851A1

    公开(公告)日：2019-02-14

    申请号：US16161010

    申请日：2018-10-15

    Applicant: KLA-Tencor Corporation

    Inventor： Yung-Ho Alex Chuang ,  Yinying Xiao-Li ,  Xuefeng Liu ,  John Fielden

    IPC: G03F7/20 ,  H01J37/073 ,  H01J1/34 ,  H01J1/304 ,  H01J35/06

    CPC classification number: G03F7/70008 ,  H01J1/304 ,  H01J1/34 ,  H01J35/065 ,  H01J37/073 ,  H01J2201/30411 ,  H01J2201/3048 ,  H01J2237/0635

    Abstract: An electron source is formed on a silicon substrate having opposing first and second surfaces. At least one field emitter is prepared on the second surface of the silicon substrate to enhance the emission of electrons. To prevent oxidation of the silicon, a thin, contiguous boron layer is disposed directly on the output surface of the field emitter using a process that minimizes oxidation and defects. The field emitter can take various shapes such as pyramids and rounded whiskers. One or several optional gate layers may be placed at or slightly lower than the height of the field emitter tip in order to achieve fast and accurate control of the emission current and high emission currents. The field emitter can be p-type doped and configured to operate in a reverse bias mode or the field emitter can be n-type doped.

    Electron Source
    34.
    发明申请
    Electron Source 审中-公开
    电子源

    公开(公告)号：US20170047207A1

    公开(公告)日：2017-02-16

    申请号：US15234638

    申请日：2016-08-11

    Applicant: KLA-Tencor Corporation

    Inventor： Yung-Ho Alex Chuang ,  Yinying Xiao-Li ,  Xuefeng Liu ,  John Fielden

    IPC: H01J40/06 ,  G03F7/20 ,  H01J37/29 ,  H01J37/285 ,  H01J1/34 ,  H01J35/14

    CPC classification number: G03F7/70008 ,  H01J1/304 ,  H01J1/34 ,  H01J35/065 ,  H01J37/073 ,  H01J2201/30411 ,  H01J2201/3048 ,  H01J2237/0635

    Abstract: An electron source is formed on a silicon substrate having opposing first and second surfaces. At least one field emitter is prepared on the second surface of the silicon substrate to enhance the emission of electrons. To prevent oxidation of the silicon, a thin, contiguous boron layer is disposed directly on the output surface of the field emitter using a process that minimizes oxidation and defects. The field emitter can take various shapes such as pyramids and rounded whiskers. One or several optional gate layers may be placed at or slightly lower than the height of the field emitter tip in order to achieve fast and accurate control of the emission current and high emission currents. The field emitter can be p-type doped and configured to operate in a reverse bias mode or the field emitter can be n-type doped.

    Abstract translation: 在具有相对的第一和第二表面的硅衬底上形成电子源。 在硅衬底的第二表面上制备至少一个场致发射体以增强电子的发射。 为了防止硅的氧化，使用最小化氧化和缺陷的工艺将薄的连续的硼层直接设置在场致发射体的输出表面上。 场发射器可以采取各种形状，例如金字塔和圆形晶须。 一个或几个可选的栅极层可以放置在或稍低于场发射极尖端的高度，以便实现对发射电流和高发射电流的快速和准确的控制。 场发射极可以是p型掺杂的并且被配置为以反偏压模式操作，或者场发射极可以是n型掺杂的。

    ARRAY OF CARBON NANOTUBE MICRO-TIP STRUCTURES
    36.
    发明申请
    ARRAY OF CARBON NANOTUBE MICRO-TIP STRUCTURES 有权
    碳纳米管微型结构阵列

    公开(公告)号：US20160329184A1

    公开(公告)日：2016-11-10

    申请号：US15214779

    申请日：2016-07-20

    Applicant: Tsinghua University ,  HON HAI PRECISION INDUSTRY CO., LTD.

    Inventor： YANG WEI ,  SHOU-SHAN FAN

    IPC: H01J1/14 ,  H01J1/304 ,  H01J9/04

    CPC classification number: H01J1/14 ,  H01J1/3044 ,  H01J9/042 ,  H01J37/073 ,  H01J63/02 ,  H01J63/06 ,  H01J2201/196 ,  H01J2201/30411 ,  H01J2201/30469 ,  H01J2237/06316 ,  H01J2237/06333 ,  H01J2237/06341 ,  H01J2237/26 ,  H01J2237/28 ,  H01J2329/0455 ,  Y10T428/24132

    Abstract: An array of carbon nanotube micro-tip structure includes an insulating substrate and a plurality of patterned carbon nanotube film structures. The insulating substrate includes a surface. The surface includes an edge. A plurality of patterned carbon nanotube film structures spaced from each other. Each of the plurality of patterned carbon nanotube film structures is partially arranged on the surface of the insulating substrate. Each of the plurality of patterned carbon nanotube film structures comprises two strip-shaped arms joined together forming a tip portion protruding and suspending from the edge of the surface of the insulating substrate. Each of the two strip-shaped arms comprises a plurality of carbon nanotubes parallel to the surface of the insulating substrate.

    Abstract translation: 碳纳米管微尖端结构的阵列包括绝缘基板和多个图案化的碳纳米管薄膜结构。 绝缘基板包括表面。 表面包括边缘。 多个图案化的碳纳米管薄膜结构彼此间隔开。 多个图案化碳纳米管膜结构中的每一个部分地布置在绝缘基板的表面上。 多个图案化碳纳米管膜结构中的每一个包括两个连接在一起的条形臂，形成从绝缘基板的表面的边缘突出并悬挂的末端部分。 两个条形臂中的每一个包括平行于绝缘基板的表面的多个碳纳米管。

    Method for producing a field-emitter array with controlled apex sharpness
    37.
    发明授权
    Method for producing a field-emitter array with controlled apex sharpness 有权
    制造具有受控顶尖锐度的场发射器阵列的方法

    公开(公告)号：US08216863B2

    公开(公告)日：2012-07-10

    申请号：US13001449

    申请日：2009-05-29

    Applicant: Eugenie Kirk ,  Soichiro Tsujino

    Inventor： Eugenie Kirk ,  Soichiro Tsujino

    IPC: H01L21/00 ,  H01L21/331

    CPC classification number: H01J9/025 ,  H01J1/3044 ,  H01J2201/30411 ,  H01J2209/0223

    Abstract: A method of manufacturing field-emitter arrays by a molding technique includes uniformly controlling a shape of mold holes to obtain field emitter tips having diameters below 100 nm and blunted side edges. Repeated oxidation and etching of a mold substrate formed of single-crystal semiconductor mold wafers is carried out, wherein the mold holes for individual emitters are fabricated by utilizing the crystal orientation dependence of the etching rate.

    Abstract translation: 通过模制技术制造场致发射器阵列的方法包括均匀地控制模具孔的形状以获得直径小于100nm的场发射器尖端和钝化的侧边缘。 进行由单晶半导体模具晶片形成的模具基板的重复氧化和蚀刻，其中通过利用蚀刻速率的晶体取向依赖性来制造各个发光体的模具孔。

    DIAMOND ELECTRON SOURCE AND METHOD FOR MANUFACTURING THE SAME
    38.
    发明申请
    DIAMOND ELECTRON SOURCE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    金刚石电子源及其制造方法

    公开(公告)号：US20090160307A1

    公开(公告)日：2009-06-25

    申请号：US12094250

    申请日：2007-09-18

    Applicant: Akihiko Ueda ,  Yoshiyuki Yamamoto ,  Yoshiki Nishibayashi ,  Takahiro Imai

    Inventor： Akihiko Ueda ,  Yoshiyuki Yamamoto ,  Yoshiki Nishibayashi ,  Takahiro Imai

    IPC: H01J1/16 ,  H01J9/02

    CPC classification number: H01J1/3044 ,  H01J9/025 ,  H01J37/065 ,  H01J37/073 ,  H01J2201/30407 ,  H01J2201/30411 ,  H01J2201/30419 ,  H01J2201/30457 ,  H01J2237/06341 ,  H01J2237/26 ,  H01J2237/3137 ,  H01J2237/3146 ,  H01J2237/31749 ,  H01J2237/3175

    Abstract: A diamond electron source in which a single sharpened tip is formed at one end of a pillar-shaped diamond monocrystal of a size for which resist application is difficult in a microfabrication process, as an electron emission point used in an electron microscope or other electron beam device, and a method for manufacturing the diamond electron source. One end of a pillar-shaped diamond monocrystal 10 is ground to form a smooth flat surface 11, and a ceramic layer 12 is formed on the smooth flat surface 11. A thin-film layer 14 having a prescribed shape is deposited on the ceramic layer 12 using a focused ion beam device, after which the ceramic layer 12 is patterned by etching using the thin-film layer 14 as a mask. A single sharpened tip is formed at one end of the pillar-shaped diamond monocrystal 10 by dry etching using the resultant ceramic mask.

    Abstract translation: 一种金刚石电子源，其中在微细加工过程中难以施加抗蚀剂尺寸的柱状金刚石单晶的一端形成单个锐化尖端作为电子显微镜或其他电子束中使用的电子发射点 器件，以及金刚石电子源的制造方法。 将柱状金刚石单晶10的一端研磨成平滑的平坦面11，在平坦的平坦面11上形成陶瓷层12.具有规定形状的薄膜层14沉积在陶瓷层上 12，使用聚焦离子束装置，之后通过使用薄膜层14作为掩模的蚀刻对陶瓷层12进行图案化。 通过使用所得到的陶瓷掩模的干蚀刻，在柱状金刚石单晶10的一端形成单个尖锐的尖端。

    BRIGHT AND DURABLE FIELD EMISSION SOURCE DERIVED FROM REFRACTORY TAYLOR CONES
    39.
    发明申请
    BRIGHT AND DURABLE FIELD EMISSION SOURCE DERIVED FROM REFRACTORY TAYLOR CONES 审中-公开
    明亮和耐久的场地排放源由炼铁塔发出

    公开(公告)号：WO2015070109A1

    公开(公告)日：2015-05-14

    申请号：PCT/US2014/064697

    申请日：2014-11-07

    Applicant: HIRSCH, Gregory

    Inventor： HIRSCH, Gregory

    IPC: H01J49/04

    CPC classification number: H01J37/073 ,  H01J1/304 ,  H01J1/3044 ,  H01J9/025 ,  H01J37/08 ,  H01J37/3178 ,  H01J2201/30411 ,  H01J2237/0805

    Abstract: A method of producing field emitters having improved brightness and durability relying on the creation of a liquid Taylor cone from electrically conductive materials having high melting points. The method calls for melting the end of a wire substrate with a focused laser beam, while imposing a high positive potential on the material. The resulting molten Taylor cone is subsequently rapidly quenched by cessation of the laser power. Rapid quenching is facilitated in large part by radiative cooling, resulting in structures having characteristics closely matching that of the original liquid Taylor cone. Frozen Taylor cones thus obtained yield desirable tip end forms for field emission sources in electron beam applications. Regeneration of the frozen Taylor cones in-situ is readily accomplished by repeating the initial formation procedures. The high temperature liquid Taylor cones can also be employed as bright ion sources with chemical elements previously considered impractical to implement.

    Abstract translation: 一种制造具有改善的亮度和耐久性的场致发射体的方法，其依赖于具有高熔点的导电材料产生液体泰勒锥。 该方法要求用聚焦激光束熔化线基底的端部，同时在材料上施加高的正电位。 随后通过停止激光功率使所得的熔融泰勒锥快速淬火。 在很大程度上通过辐射冷却促进快速淬火，导致具有与原始液体泰勒锥的特征密切相似的特征的结构。 因此获得的冷冻泰勒锥在电子束应用中产生用于场发射源的期望的尖端形式。 通过重复初始形成程序容易地实现冷冻泰勒锥的原位再生。 高温液体泰勒锥也可用作具有以前认为不实际实施的化学元素的明亮离子源。

    VERFAHREN UND VORRICHTUNG ZUR HERSTELLUNG VON NANOSPITZEN
    40.
    发明申请
    VERFAHREN UND VORRICHTUNG ZUR HERSTELLUNG VON NANOSPITZEN 审中-公开
    方法和装置的制备纳米TIPS

    公开(公告)号：WO2014198944A1

    公开(公告)日：2014-12-18

    申请号：PCT/EP2014/062462

    申请日：2014-06-13

    Applicant: IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS / LEIBNIZ-INSTITUT FÜR INNOVATIVE MIKROELEKTRONIK

    Inventor： MEHR, Wolfgang ,  WOLFF, André

    IPC: H01J37/073

    CPC classification number: C23F4/00 ,  B81C1/00111 ,  C23C16/50 ,  H01J1/3044 ,  H01J9/025 ,  H01J37/073 ,  H01J37/32963 ,  H01J37/32981 ,  H01J2201/30411 ,  H01J2209/0226 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/3081

    Abstract: Verfahren zur Herstellung von mindestens einer Nanospitze aus einem Spitzenmaterial, umfassend das Bereitstellen eines Substrates (210), das aus dem Spitzenmaterial besteht oder dieses in Form einer Beschichtung aufweist, das Herstellen einer Maske aus einem Maskenmaterial (220), wobei das Maskenmaterial so gewählt ist, dass in einem vorbestimmten reaktiven lonenatzprozess das Maskenmaterial mit einer geringeren Ätzrate entfernt wird als das Spitzenmaterial und das Durchführen des reaktiven lonenätzprozesses in einer Ätzkammer, wobei Maskenmaterials zusätzlich derart ausgewählt wird, dass beim reaktiven lonenätzprozess aus dem Maskenmaterial eine gasförmige Komponente (230) freigesetzt wird, die beim reaktiven lonenätzprozess aus dem Spitzenmaterial nicht freigesetzt wird und wobei das Verfahren weiterhin die Schritte Detektieren der gasförmigen Komponente während der Durchführung des lonenätzprozesses, wiederholtes Ermitteln während des lonenätzprozesses, ob eine Menge der gasförmigen Komponente in der Ätzkammer einen vorbestimmten unteren Schwellwert erreicht, und sobald der untere Schwellwert erreicht ist: Stoppen des reaktiven lonenätzprozesses, umfasst.

    Abstract translation: 一种用于至少产生一个顶材料的纳米尖端，其包括：提供衬底（210），它由尖端的材料制成，或该具有涂层的形式，制备由掩模材料（220），的掩模，其中所述掩模材料被选择，以便处理 的是，在预定的反应性lonenatzprozess掩模材料被以较慢的蚀刻速度比所述顶部材料取出，并在蚀刻室，其中，所述掩模材料的反应离子蚀刻的气体成分时的掩模材料被进一步选择，使得进行所述反应性lonenätzprozesses（230）被释放 未在反应性离子蚀刻工艺从尖端材料释放，并且其中所述方法还包括lonenätzprozesses的执行期间检测所述气态组分，lonenätzprozesses期间反复确定是否量的步骤 气体成分达到在蚀刻室的预定下阈值，并且当达到所述下阈值时：停止所述反应性lonenätzprozesses包括。

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