Photoempfindliche Hartmaske für die Mikrolithographie

    公开(公告)号:DE112009000979B4

    公开(公告)日:2014-12-11

    申请号:DE112009000979

    申请日:2009-04-21

    Abstract: Verfahren zum Bilden einer mikroelektronischen Struktur, bei dem (a) ein Substrat mit einer Oberfläche bereitgestellt wird, (b) gegebenenfalls eine oder mehrere Zwischenschichten auf der Oberfläche gebildet werden, (c) eine Hartmaskenzusammensetzung angrenzend an die Zwischenschichten, falls vorhanden, oder angrenzend an die Substratoberfläche, falls keine Zwischenschichten vorhanden sind, aufgebracht wird, wobei die Hartmaskenzusammensetzung nichtpolymere Nanopartikel enthält, die in einem Lösungsmittelsystem gelöst oder dispergiert sind, (d) die Hartmaskenzusammensetzung gebacken wird, um eine Hartmaskenschicht zu ergeben, (e) die Hartmaskenschicht Strahlung ausgesetzt wird, um einen bestrahlten Teil der Hartmaske zu erhalten und (f) die Hartmaskenschicht mit einem Entwickler in Kontakt gebracht wird, um so den bestrahlten Teil der Hartmaskenschicht zu entfernen.

    ACID-SENSITIVE, DEVELOPER-SOLUBLE BOTTOM ANTI-REFLECTIVE COATINGS

    公开(公告)号:SG173730A1

    公开(公告)日:2011-09-29

    申请号:SG2011059177

    申请日:2010-02-19

    Abstract: Acid-sensitive, developer-soluble bottom anti-reflective coating compositions are provided, along with methods of using such compositions and microelectronic structures formed thereof. The compositions preferably comprise a crosslinkable polymer dissolved or dispersed in a solvent system. The polymer preferably comprises recurring monomeric units having adamantyl groups. The compositions also preferably comprise a crosslinker, such as a vinyl ether crosslinking agent, dispersed or dissolved in the solvent system with the polymer. In some embodiments, the composition can also comprise a photoacid generator (PAG) and/or a quencher. The bottom anti-reflective coating compositions are thermally crosslinkable, but can be decrosslinked in the presence of an acid to be rendered developer soluble.

    49.
    发明专利
    未知

    公开(公告)号:AT523263T

    公开(公告)日:2011-09-15

    申请号:AT05705442

    申请日:2005-01-07

    Abstract: New protective coating layers for use in wet etch processes during the production of semiconductor and MEMS devices are provided. The layers include a primer layer, a first protective layer, and an optional second protective layer. The primer layer preferably comprises an organo silane compound in a solvent system. The first protective layer includes thermoplastic copolymers prepared from styrene, acrylonitrile, and optionally other addition-polymerizable monomers such as (meth)acrylate monomers, vinylbenzyl chloride, and diesters of maleic acid or fumaric acid. The second protective layer comprises a highly halogenated polymer such as a chlorinated polymer which may or may not be crosslinked upon heating.

    THERMAL-AND CHEMICAL-RESISTANT ACID PROTECTION COATING MATERIAL AND SPIN- ON THERMOPLASTIC ADHESIVE

    公开(公告)号:SG169384A1

    公开(公告)日:2011-03-30

    申请号:SG2011008075

    申请日:2007-01-26

    Abstract: THERMAL-AND CHEMICAL-RESISTANT ACID PROTECTION COATING MATERIAL AND SPIN-ON THERMOPLASTIC ADHESIVE New compositions for use as protective coatings and/or adhesives are provided. The compositions comprise a hydrocarbon resin (e.g., terpene rosin) and a rubber (e.g., EPDM) dispersed or dissolved in a solvent system. The solvent system is preferably a single-solvent system, and the compositions are preferably free of surfactants, dyes, and chromophores. The compositions can be cured or dried to form layers or films that are chemically and thermally resistant, but that can be readily dissolved and removed at the appropriate stage in the fabrication process.

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