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公开(公告)号:DE68928548T2
公开(公告)日:1998-04-23
申请号:DE68928548
申请日:1989-09-25
Applicant: BREWER SCIENCE INC
Inventor: LAMB JAMES , BREWER TERRY , MORI J
IPC: G03F7/004 , G03F7/039 , G03F7/085 , G03F7/09 , H01L21/027
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公开(公告)号:DE3856007D1
公开(公告)日:1997-10-02
申请号:DE3856007
申请日:1988-01-12
Applicant: BREWER SCIENCE INC
Inventor: BREWER TERRY , HAWLEY DAN , LAMB JAMES , LATHAM WILLIAM , STICHNOTE LYNN
Abstract: Filters (10, 15) suitable for microelectronic uses and the like may be prepared directly on substrates (250) either as monolithically integrated filters (10) or as hybrid filters (50) using a soluble dye material in a resin (252). The resin (252) may be applied to microelectronic substrates (250) and patterned by conventional microphotolitho-graphic processes.
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公开(公告)号:DE3485989D1
公开(公告)日:1992-12-24
申请号:DE3485989
申请日:1984-04-13
Applicant: BREWER SCIENCE, INC., ROLLA, MO., US
IPC: G03F7/004 , G02B1/10 , G02B1/11 , G03F7/00 , G03F7/09 , G03F7/11 , G03F7/26 , G03F7/30 , H01L21/027 , H01L21/30
Abstract: A photolithographic resist comprising a substrate (I), a photoresist (II) and a light-absorbing imageable anti-reflective coating (III) between the (I) and (II), the (III) comprising a thin, essentially continuous layer of polybutene sulphone contg. a dye, and the (III) being imageable by light of the same wavelength as the (II) and being developable and removable with the (II).
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公开(公告)号:AU5433890A
公开(公告)日:1990-11-05
申请号:AU5433890
申请日:1990-03-30
Applicant: BREWER SCIENCE INC
Inventor: BREWER TERRY , FLAIM TONY , LAMB JAMES E III , BARNES GREGG A
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公开(公告)号:SG10201607603VA
公开(公告)日:2016-11-29
申请号:SG10201607603V
申请日:2012-10-10
Applicant: BREWER SCIENCE INC
Inventor: KRISHNAMURTHY VANDANA , SULLIVAN DANIEL M , WANG YUBAO , LIN QIN , SIMMONS SEAN
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公开(公告)号:IL206872A
公开(公告)日:2015-07-30
申请号:IL20687210
申请日:2010-07-07
Applicant: BREWER SCIENCE INC
IPC: H01L20060101
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公开(公告)号:DE112009000979B4
公开(公告)日:2014-12-11
申请号:DE112009000979
申请日:2009-04-21
Applicant: BREWER SCIENCE INC
Inventor: MERCADO RAMIL-MARCELO L , XU HAO , GUERRERO DOUGLAS J
IPC: G03F7/20
Abstract: Verfahren zum Bilden einer mikroelektronischen Struktur, bei dem (a) ein Substrat mit einer Oberfläche bereitgestellt wird, (b) gegebenenfalls eine oder mehrere Zwischenschichten auf der Oberfläche gebildet werden, (c) eine Hartmaskenzusammensetzung angrenzend an die Zwischenschichten, falls vorhanden, oder angrenzend an die Substratoberfläche, falls keine Zwischenschichten vorhanden sind, aufgebracht wird, wobei die Hartmaskenzusammensetzung nichtpolymere Nanopartikel enthält, die in einem Lösungsmittelsystem gelöst oder dispergiert sind, (d) die Hartmaskenzusammensetzung gebacken wird, um eine Hartmaskenschicht zu ergeben, (e) die Hartmaskenschicht Strahlung ausgesetzt wird, um einen bestrahlten Teil der Hartmaske zu erhalten und (f) die Hartmaskenschicht mit einem Entwickler in Kontakt gebracht wird, um so den bestrahlten Teil der Hartmaskenschicht zu entfernen.
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公开(公告)号:SG173730A1
公开(公告)日:2011-09-29
申请号:SG2011059177
申请日:2010-02-19
Applicant: BREWER SCIENCE INC
Inventor: MEADOR JIM D , LOWES JOYCE A , MERCADO RAMIL-MARCELO L
Abstract: Acid-sensitive, developer-soluble bottom anti-reflective coating compositions are provided, along with methods of using such compositions and microelectronic structures formed thereof. The compositions preferably comprise a crosslinkable polymer dissolved or dispersed in a solvent system. The polymer preferably comprises recurring monomeric units having adamantyl groups. The compositions also preferably comprise a crosslinker, such as a vinyl ether crosslinking agent, dispersed or dissolved in the solvent system with the polymer. In some embodiments, the composition can also comprise a photoacid generator (PAG) and/or a quencher. The bottom anti-reflective coating compositions are thermally crosslinkable, but can be decrosslinked in the presence of an acid to be rendered developer soluble.
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公开(公告)号:AT523263T
公开(公告)日:2011-09-15
申请号:AT05705442
申请日:2005-01-07
Applicant: BREWER SCIENCE INC
Inventor: LI CHENGHONG , RUBEN KIMBERLY , FLAIM TONY
IPC: B05D1/36 , B32B9/04 , B81C1/00 , C09D125/12 , H01L21/308 , H01L21/311
Abstract: New protective coating layers for use in wet etch processes during the production of semiconductor and MEMS devices are provided. The layers include a primer layer, a first protective layer, and an optional second protective layer. The primer layer preferably comprises an organo silane compound in a solvent system. The first protective layer includes thermoplastic copolymers prepared from styrene, acrylonitrile, and optionally other addition-polymerizable monomers such as (meth)acrylate monomers, vinylbenzyl chloride, and diesters of maleic acid or fumaric acid. The second protective layer comprises a highly halogenated polymer such as a chlorinated polymer which may or may not be crosslinked upon heating.
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50.
公开(公告)号:SG169384A1
公开(公告)日:2011-03-30
申请号:SG2011008075
申请日:2007-01-26
Applicant: BREWER SCIENCE INC US
Inventor: MOORE JOHN C , FOWLER MICHELLE R
Abstract: THERMAL-AND CHEMICAL-RESISTANT ACID PROTECTION COATING MATERIAL AND SPIN-ON THERMOPLASTIC ADHESIVE New compositions for use as protective coatings and/or adhesives are provided. The compositions comprise a hydrocarbon resin (e.g., terpene rosin) and a rubber (e.g., EPDM) dispersed or dissolved in a solvent system. The solvent system is preferably a single-solvent system, and the compositions are preferably free of surfactants, dyes, and chromophores. The compositions can be cured or dried to form layers or films that are chemically and thermally resistant, but that can be readily dissolved and removed at the appropriate stage in the fabrication process.
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