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公开(公告)号：KR101444708B1
公开(公告)日：2014-09-26
申请号：KR1020090124720
申请日：2009-12-15
Applicant: 한국전자통신연구원
CPC classification number: H01F17/0006 , H01F2017/0086 , H01L28/10
Abstract: 본 발명의 기술적 사상의 실시 예에 따른 인덕터는 반도체 기판 내에 일 방향을 따라 형성된 제 1 내지 제 4 도전 단자들, 상기 반도체 기판의 일면에 형성되며, 상기 제 1 내지 제 4 도전 단자들 중 내측에 위치한 제 2 및 제 3 도전 단자와 전기적으로 연결된 제 1 도전 라인, 상기 반도체 기판의 상기 일면에 형성되며, 상기 제 1 내지 제 4 도전 단자들 중 외측에 위치한 제 1 및 제 4 도전 단자와 전기적으로 연결된 제 2 도전 라인 및 상기 반도체 기판의 타면에 형성되며, 상기 제 1 내지 제 4 도전 단자들 중 상기 제 1 도전 단자 및 상기 제 3 도전 단자와 전기적으로 연결된 제 3 도전 라인을 포함한다.
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公开(公告)号：KR1020140094350A
公开(公告)日：2014-07-30
申请号：KR1020130007084
申请日：2013-01-22
Applicant: 한국전자통신연구원
IPC: H04B10/07
CPC classification number: H04B10/0779
Abstract: The present invention relates to a measuring device and a method for measuring signal transmission time difference thereof. According to the present invention, the method for measuring signal transmission time difference includes the steps of: when a first optical line is inserted into a first passage and a second optical line is inserted into a second passage, receiving a first signal received through the first passage and the second passage; when the second optical line is inserted into the first passage and the first optical line is inserted into the second passage, receiving a second signal received through the first passage and the second passage; and measuring screw between the first optical line and the second optical line on the basis of the first signal and the second signal.
Abstract translation: 本发明涉及测量装置及其信号传输时差的测量方法。 根据本发明，用于测量信号传输时差的方法包括以下步骤：当将第一光线插入第一通道并将第二光线插入第二通道时，接收通过第一通道接收的第一信号 通道和第二通道; 当第二光线插入第一通道并且第一光线插入第二通道时，接收通过第一通道和第二通道接收的第二信号; 以及基于第一信号和第二信号测量第一光线和第二光线之间的螺丝。
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公开(公告)号：KR1020140078185A
公开(公告)日：2014-06-25
申请号：KR1020120147251
申请日：2012-12-17
Applicant: 한국전자통신연구원
CPC classification number: H01L29/66477 , H01L23/5225 , H01L23/5228 , H01L23/5329 , H01L23/66 , H01L2223/6627 , H01L2223/6683 , H01L2924/0002 , H01L2924/00
Abstract: An electronic chip and a method of fabricating the same are provided. A semiconductor chip may include a substrate; an active device integrated with the substrate; a lower interlayer dielectric which covers the front surface of the result where the active device is provided, and a passive device provided on the lower interlayer dielectric; an upper interlayer dielectric which covers the front surface of the result where the passive device is provided; and a ground electrode provided on the upper interlayer dielectric. In this case, the upper interlayer dielectric layer is made of a material whereby the dielectric constant is higher than that of the lower interlayer dielectric.
Abstract translation: 提供电子芯片及其制造方法。 半导体芯片可以包括基板; 与衬底集成的有源器件; 覆盖提供有源器件的结果的前表面的下层间电介质和设置在下层间电介质上的无源器件; 覆盖提供无源器件的结果的前表面的上层间电介质; 以及设置在上层间电介质上的接地电极。 在这种情况下，上层间电介质层由介电常数高于下层间电介质的材料制成。
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公开(公告)号：KR101344027B1
公开(公告)日：2013-12-24
申请号：KR1020100073374
申请日：2010-07-29
Applicant: 한국전자통신연구원
IPC: G01J1/44 , H01L27/146
CPC classification number: G11C27/024
Abstract: 본발명은가이거모드로동작하는광검출기에관한것이다. 본발명의실시예에따른광검출기는, 아발란치포토다이오드, 상기아발란치포토다이오드의일단에바이어스전압을제공하는바이어스회로, 상기아발란치포토다이오드의타단에연결되며, 상기아발란치포토다이오드에발생하는광전류를검출하기위한검출회로, 그리고상기아발란치포토다이오드의일단또는타단에연결되며, 상기아발란치포토다이오드를가이거모드로구동하기위한커플링전압을제공하는커플링커패시터를포함한다.
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公开(公告)号：KR101226956B1
公开(公告)日：2013-01-28
申请号：KR1020090101134
申请日：2009-10-23
Applicant: 한국전자통신연구원
IPC: H04B10/2581 , H04B10/50 , H04B10/60
CPC classification number: H04L25/0226 , H04B10/532 , H04B10/548 , H04J14/06 , H04L27/2613
Abstract: 본 발명의 편광 다중 광 OFDM 송신기는, 송신 신호를 복수의 그룹들로 다중화하는 데이터 분리부, 상기 다중화된 그룹들 각각에 포함되어 있는 OFDM(Optical Orthogonal Frequency Division Multiplexing) 데이터 각각에 대해 복수의 훈련 심볼들을 할당하고, 각각의 훈련 심볼에 대해 주파수 영역에서 주기적으로 0의 데이터가 나타날 수 있도록 상기 각각의 훈련 심볼에 대해 시간 영역에서 반복적인 데이터를 할당하는 훈련신호 생성부, 그리고 상기 훈련신호 생성부의 출력에 대해 광주파수 대역 변환 및 편광 다중화를 수행하여, 복수의 편광 성분들에 대응되는 편광 다중 광 OFDM 신호를 출력하는 광상향 변환부 및 편광 다중화부를 포함한다.
편광 다중, 광 OFDM, 채널 추정, 동기화-
Patent Agency Ranking
公开(公告)号：KR1020120048258A
公开(公告)日：2012-05-15
申请号：KR1020100109803
申请日：2010-11-05
Applicant: 한국전자통신연구원
IPC: G02B6/12
CPC classification number: G02B6/32 , G02B6/12 , G02B6/4214
Abstract: PURPOSE: An optical waveguide structure which includes an inclined mirror and a lens is provided to reduce a focal distance of an optical lens to 0.1mm or less, thereby forming an optical waveguide and an optical lens on the same plane. CONSTITUTION: An optical waveguide comprises a lower clad(201), a waveguide core(202), and a clad film(203). The waveguide core is formed on the lower clad. The clad film is formed on the waveguide core. An optical lens(205) is formed on the surface of the clad film. One terminal end of the optical waveguide forms an inclined surface.
Abstract translation: 目的：提供一种包括倾斜镜和透镜的光波导结构，以将光学透镜的焦距减小到0.1mm以下，从而在同一平面上形成光波导和光学透镜。 构成：光波导包括下包层（201），波导芯（202）和包层膜（203）。 波导芯形成在下包层上。 包层膜形成在波导芯上。 在包覆膜的表面上形成有光学透镜（205）。 光波导的一个终端形成倾斜表面。
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公开(公告)号：KR1020110049255A
公开(公告)日：2011-05-12
申请号：KR1020090106191
申请日：2009-11-04
Applicant: 한국전자통신연구원
Abstract: PURPOSE: A method for manufacturing a semiconductor substrate for a semiconductor light emitting device and method for manufacturing a semiconductor light emitting device are provided to reduce stress due to mismatch of grid coefficients and thermal expansion coefficients between a silicon substrate and a GaN semiconductor film, thereby increasing light extracting efficiency. CONSTITUTION: An oxide layer(110) is formed on a silicon substrate. A metal thin film is deposited on the oxide layer. A metal thin fill is annealed to form a metal nano particle with a nano pattern. An oxide layer is etched by a nano pattern using the metal nano particle as a mask. The metal nano particle is etched. The oxide layer is etched by a nano pattern by using the metal nano particle as a mask. A buffer layer(130) is formed on an oxide layer and a silicon substrate on which an oxide layer is not formed.
Abstract translation: 目的：提供一种半导体发光器件用半导体衬底的制造方法及半导体发光元件的制造方法，以减少由于硅衬底与GaN半导体膜之间的栅格系数不匹配和热膨胀系数引起的应力，由此 提高光提取效率。 构成：在硅衬底上形成氧化物层（110）。 金属薄膜沉积在氧化物层上。 将金属薄填充物退火以形成具有纳米图案的金属纳米颗粒。 使用金属纳米颗粒作为掩模，通过纳米图案蚀刻氧化物层。 蚀刻金属纳米颗粒。 通过使用金属纳米颗粒作为掩模，通过纳米图案蚀刻氧化物层。 在氧化物层和未形成氧化物层的硅衬底上形成缓冲层（130）。
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公开(公告)号：KR1020100071693A
公开(公告)日：2010-06-29
申请号：KR1020080130496
申请日：2008-12-19
Applicant: 한국전자통신연구원
IPC: H01L31/107
CPC classification number: H01L31/107 , H01L31/02366 , H01L31/0392 , H01L31/18
Abstract: PURPOSE: A method for manufacturing an avalanche photo diode is provided to suppress an edge breakdown by reducing the curvature of a junction interface without a guard ring. CONSTITUTION: A first conductive amplification layer(105) is formed on a first conductive substrate(101). A recess region including a first recess unit(113) and a second recess unit(117) is formed by etching the first conductive amplification layer. A second conductive diffusion layer(130) is formed by diffusing conductive diffusion materials to the first conductive amplification layer. A second conductive electrode(150) connected to the second conductive diffusion layer is formed on the first conductive amplification layer. A first conductive electrode(160) is formed on the rear of the first conductive substrate.
Abstract translation: 目的：提供一种制造雪崩光电二极管的方法，通过降低没有保护环的接合界面的曲率来抑制边缘击穿。 构成：第一导电性放电层（105）形成在第一导电性基板（101）上。 通过蚀刻第一导电放大层形成包括第一凹部单元（113）和第二凹部单元（117）的凹部区域。 通过将导电扩散材料扩散到第一导电放大层来形成第二导电扩散层（130）。 连接到第二导电扩散层的第二导电电极（150）形成在第一导电放大层上。 第一导电电极（160）形成在第一导电基板的后部。
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公开(公告)号：KR1020100061607A
公开(公告)日：2010-06-08
申请号：KR1020080120192
申请日：2008-11-29
Applicant: 한국전자통신연구원
IPC: G02B6/10 , H01L27/146
CPC classification number: H01L25/167 , H01L2224/0603 , H01L2224/45014 , H01L2224/48137 , H01L2224/4903 , H01L2224/73265 , H01L2924/1305 , H01L2924/30107 , H01L2924/00
Abstract: PURPOSE: A high speed optical wiring element is provided to form an optical has high speed, low power, and low price without a serializer, a parallelizer, and a modulator by using a multi-channel fiber. CONSTITUTION: A first semiconductor chip(301) is formed on a SOI(Silicon On Insulator) substrate(200). An optical emitter(302) outputs a multiple optical signal by receiving a multiple electric signal from the first semiconductor chip on the SOI substrate. An optical detector(304) changes the multi optical signal of the SOI substrate into the multiple electric signal. A second semiconductor chip(305) receives a multiple electric signal transformed with the optical detector of the SOI substrate. The SOI substrate comprises a first SOI substrate, a second semiconductor chip, and a second SOI substrate. The first SOI substrate and the second SOI substrate are arranged to be separated.
Abstract translation: 目的：通过使用多通道光纤，提供高速光配线元件以形成具有高速度，低功率和低价格的光学，而不需要串行器，并行器和调制器。 构成：在SOI（绝缘体上硅）衬底（200）上形成第一半导体芯片（301）。 光发射器（302）通过从SOI衬底上的第一半导体芯片接收多个电信号来输出多个光信号。 光检测器（304）将SOI衬底的多光信号改变为多电信号。 第二半导体芯片（305）接收用SOI衬底的光检测器变换的多电信号。 SOI衬底包括第一SOI衬底，第二半导体芯片和第二SOI衬底。 第一SOI衬底和第二SOI衬底被布置成分离。
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公开(公告)号：KR1020100061606A
公开(公告)日：2010-06-08
申请号：KR1020080120191
申请日：2008-11-29
Applicant: 한국전자통신연구원
IPC: H01L27/04
Abstract: PURPOSE: An optical wiring device is provided to reduce the power consumption by minimizing a performance deterioration caused by a parasitic component on a silicon substrate. CONSTITUTION: A first semiconductor chip(301) is arranged on a SOI(Silicon-On-Insulator) substrate(300). An optical emitter(302) is inputted with an electric signal form the first semiconductor chip and outputs the optical signal. A photodetector(304) senses the optical signal and changes the optical signal into the electric signal. A second semiconductor chip is inputted with the electric signal from the photodetector. A first SOI substrate is arranged with the first semiconductor chip and the photodetector. A second SOI substrate is arranged with the second semiconductor chip and the photodetector.
Abstract translation: 目的：提供一种光学配线装置，通过最小化由硅衬底上的寄生成分引起的性能劣化来降低功耗。 构成：第一半导体芯片（301）布置在SOI（绝缘体上硅）衬底（300）上。 光发射器（302）从第一半导体芯片输入电信号并输出光信号。 光电检测器（304）感测光信号并将光信号转换成电信号。 第二半导体芯片从光电检测器输入电信号。 第一SOI衬底与第一半导体芯片和光电检测器配置。 第二SOI衬底与第二半导体芯片和光电检测器一起布置。
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