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    Refractory metal capped low resistivity metal conductor lines and vias formed using pvd and cvd
    51.
    发明专利
    Refractory metal capped low resistivity metal conductor lines and vias formed using pvd and cvd 未知

    公开(公告)号：SG70045A1

    公开(公告)日：2000-01-25

    申请号：SG1997004072

    申请日：1993-02-01

    Applicant: IBM

    Inventor： JOSHI RAJIV V ,  CUOMO JEROME J ,  DALAL HORMAZDYAR M ,  HSU LOUIS L

    IPC: H01L21/28 ,  H01L21/312 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L23/498 ,  H01L23/522 ,  H01L23/532 ,  H01L23/485 ,  H01L21/60 ,  H01L29/43 ,  H01L29/440 ,  H01L29/460 ,  H01L21/44 ,  H01L21/48 ,  H01L29/40

    Abstract: Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the hard, reduced wear, properties of the refractory metal do not scratch, corrode, or smear during chemical-mechanical polishing. Superior conductive lines and vias are created using a combination of both physical vapor deposition (e.g., evaporation or collimated sputtering) of a low resistivity metal or alloy followed by chemical vapor deposition (CVD) of a refractory metal and subsequent planarization. Altering a ratio of SiH 4 to WF 6 during application of the refractory metal cap by CVD allows for controlled incorporation of silicon into the tungsten capping layer. Collimated sputtering allows for creating a refractory metal liner in an opening in a dielectric which is suitable as a diffusion barrier to copper based metallizations as well as CVD tungsten. Ideally, for faster diffusing metals like copper, liners are created by a two step collimated sputtering process wherein a first layer is deposited under relatively low vacuum pressure where directional deposition dominates (e.g., below 1mTorr) and a second layer is deposited under relatively high vacuum pressure where scattering deposition dominates (e.g., above 1mTorr). For refractory metals like CVD tungsten, the liner can be created in one step using collimated sputtering at higher vacuum pressures.

    54.
    发明专利
    未知

    公开(公告)号：DE69106956T2

    公开(公告)日：1995-08-10

    申请号：DE69106956

    申请日：1991-06-11

    Applicant: IBM

    Inventor： CUOMO JEROME J ,  GELORME JEFFREY D ,  HATZAKIS MICHAEL ,  LEWIS DAVID A ,  SHAW JANE M ,  WHITEHAIR STANLEY J

    IPC: B01J19/12 ,  C08G73/10 ,  G01N22/00 ,  H01L21/312 ,  H05B6/68 ,  H05B6/80 ,  H05K1/03 ,  H05K3/46

    Abstract: A method and apparatus are disclosed for conducting a physical process and a chemical reaction by exposing a material containing a volatile substance to microwave radiation where the morphology of said material will change when exposed to such radiation. The power of said radiation is adjusted over time as the morphology of the material changes to maximize the effect of the radiation in order to produce a product in a minimum amount of time that is substantially free of said volatile substance. The method and apparatus can also be used to conduct such a process or reaction with materials that do not contain a volatile material. In one embodiment a method and apparatus are disclosed for manufacturing a polyimide from a precursor in a solvent by exposing the precursor to microwave radiation in a tuneable microwave resonant cavity (2) that is tuned during imidization to achieve critical coupling of the system. Microwave power is controlled to remove the solvent and obtain the desired level of reaction.

    ELECTROSTATIC CLUTCH
    56.
    发明专利
    ELECTROSTATIC CLUTCH 未知

    公开(公告)号：CA1148101A

    公开(公告)日：1983-06-14

    申请号：CA361865

    申请日：1980-09-10

    Applicant: IBM

    Inventor： CUOMO JEROME J ,  LANDON ALFRED J ,  WANG HAN C

    IPC: B41J9/40 ,  H02N13/00 ,  F16D13/10

    Abstract: An electrostatic clutch operable by the Johnsen-Rahbek effect, which may be used to operate, e.g., a print hammer device, is described, said clutch comprising a rotatable drum and a band engagable therewith, wherein the engagable surface of the drum is a semiconductive surface prepared by sputtering or vapor depositing a layer of substantially pure silicon carbide onto a conductive substrate. YO979-038

    CONVERTOR OF THE PHOTON ENERGY
    60.
    发明专利
    CONVERTOR OF THE PHOTON ENERGY 未知

    公开(公告)号：CS198175B2

    公开(公告)日：1980-05-30

    申请号：CS686875

    申请日：1975-10-10

    Applicant: IBM

    Inventor： CUOMO JEROME J ,  WOODALL JERRY M ,  ZIEGLER JAMES F

    IPC: F24J2/48 ,  F24S10/75 ,  G02B5/00 ,  F03G7/02

    Abstract: An efficient converter of photon energy to heat has been devised comprising a dense array of metal whiskers grown with spacings between the whiskers of a few wavelengths of visible light. The material selected, and tungsten is exemplary of such materials, has low emissivity, but achieves significant optical absorption by trapping the light impinging on the dense array by a geometric maze effect. The characteristics of the surface are excellent for the conversion of solar energy to heat.

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