公开(公告)号：DE10345413A1

公开(公告)日：2005-05-04

申请号：DE10345413

申请日：2003-09-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： LINDER NORBERT ,  BEHRES ALEXANDER ,  MAYER BERND

IPC: H01L21/20 ,  H01L33/00 ,  H01L31/072 ,  H01S5/30

Abstract: Process for preparation of an epitaxial structural element based on a first group III/V compound semiconductor material system (SMS) with a first group V element on a substrate or buffer layer, which includes a material based on a second group III/V element SMS with a second group V element different from the first one, where prior to application of the epitaxial layer sequence, a layer sequence with different first and second group III/V compound SMS is applied.

公开(公告)号：DE10223540A1

公开(公告)日：2003-12-18

申请号：DE10223540

申请日：2002-05-27

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： ALBRECHT TONY ,  LINDER NORBERT ,  SCHMID WOLFGANG

IPC: H01S5/026 ,  H01S5/04 ,  H01S5/10 ,  H01S5/183 ,  H01S5/40 ,  H01S3/0941 ,  H01S5/34

Abstract: The laser beam (10) shines vertically downward and passes through the semitransparent second mirror (20). The first mirror (9) is mounted at the top of the laser (4) and has several parallel semitransparent surfaces, forming a Bragg mirror. The optical pumping laser (11) surrounds the main laser and is integrated with it. The top layer (17) is a parallel- doped contact layer. It covers the Bragg mirror and a mantle layer (16) surrounding it. The mantle layer is followed by a waveguide layer (15) and an active layer (14) and a further waveguide layer (13). A bottom mantle layer (12) rests on a buffer layer on top of a buffer layer (5) and a substrate (1). The substrate has flat top and bottom layers (2,3).

公开(公告)号：DE10214120A1

公开(公告)日：2003-10-23

申请号：DE10214120

申请日：2002-03-28

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： LUFT JOHANN ,  ALBRECHT TONY ,  LINDER NORBERT ,  LUTGEN STEPHAN ,  SPAETH WERNER ,  STEEGMUELLER ULRICH

IPC: H01S5/026 ,  H01S5/04 ,  H01S5/062 ,  H01S5/10 ,  H01S5/14 ,  H01S5/183 ,  H01S5/40 ,  H01S5/06

Abstract: Surface-emitting semiconductor laser arrangement comprises a vertical emitter (20) having a radiation-producing layer (14), and a modulation radiation source (30) for modulating the output of the laser arrangement. The modulation radiation source has an edge-emitting semiconductor structure (15) with a radiation-producing active layer and arranged so that it emits radiation during operation. The modulation radiation source is coupled with the radiation-producing layer of the vertical emitter.

公开(公告)号：DE10026734A1

公开(公告)日：2001-12-13

申请号：DE10026734

申请日：2000-05-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： LUFT JOHANN ,  ALBRECHT TONY ,  LINDER NORBERT

IPC: H01S5/026 ,  H01S5/04 ,  H01S5/10 ,  H01S5/14 ,  H01S5/183 ,  H01S5/34 ,  H01S5/40 ,  H01S3/0941

Abstract: The invention relates to an optically pumped, surface-emitting semiconductor laser device comprising at least one quantum well structure (11) which generates radiation and at least one pump radiation source (20) for optically pumping the quantum well structure (11), said pump radiation source (20) having a laterally-emitting semiconductor structure (21). The radiation generating quantum well structure (11) and the laterally-emitting semiconductor structure (21) are grown by epitaxy on a common substrate (1). This monolithically produced semiconductor laser device advantageously permits an extremely effective, homogeneous optical pumping of the radiation generating quantum well structure. The invention also relates to methods for producing inventive semiconductor laser devices.

公开(公告)号：AU3918201A

公开(公告)日：2001-08-27

申请号：AU3918201

申请日：2001-02-15

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： EISERT DOMINIK ,  HARLE VOLKER ,  KUHN FRANK ,  MUNDBROD MANFRED ,  STRAUSS UWE ,  ZEHNDER ULRICH ,  BAUR JOHANNES ,  JACOB ULRICH ,  NIRSCHL ERNST ,  LINDER NORBERT ,  SEDLMEIER REINHARD

IPC: H01L21/3213 ,  H01L33/00 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  H01L33/46