公开(公告)号：DE60329654D1

公开(公告)日：2009-11-26

申请号：DE60329654

申请日：2003-01-03

Applicant: AVAGO TECHNOLOGIES WIRELESS IP ,  INFINEON TECHNOLOGIES AG

Inventor： ELLAE JUHA ,  AIGNER ROBERT

IPC: H03H7/42 ,  H03H9/00 ,  H03H9/205 ,  H03H9/54 ,  H03H9/58 ,  H03H9/70

Abstract: A bulk acoustic wave device having two resonators in a stacked-up configuration separated by a dielectric layer. The device can be coupled to a lattice filter or a ladder filter to form a passband filter with an unbalanced input port and two balanced output ports. One or more such passband filters can be used, together with another lattice or ladder filter, to form a duplexer having an unbalanced antenna port, two balanced ports for one transceiver part and two balanced ports for another transceiver part.

公开(公告)号：DE602004013534D1

公开(公告)日：2008-06-19

申请号：DE602004013534

申请日：2004-03-09

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MARKSTEINER STEPHAN ,  AIGNER ROBERT

IPC: H03H3/04 ,  H03H9/17 ,  H01L41/08 ,  H03H3/02 ,  H03H9/02 ,  H03H9/15 ,  H03H9/54 ,  H03H9/56

Abstract: The present invention relates to a bulk acoustic wave (BAW) filter (40) fabricated from thin film bulk acoustic wave resonators and a method for eliminating unwanted side passbands. This BAW filter comprises a substrate (14) a resonator section (11) and an acoustic mirror section (12). Further it comprises a detuning component (31) positioned in said resonator section (11) to provide precise passband characteristics and an additional detuning component (41) in said acoustic mirror section (12) to suppress unwanted side-passband characteristics.

公开(公告)号：ES2298254T3

公开(公告)日：2008-05-16

申请号：ES01967197

申请日：2001-07-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT ,  ELBRECHT LUEDER ,  HERZOG THOMAS RAINER ,  MARKSTEINER STEPHAN ,  NESSLER WINFRIED

IPC: H01L37/02 ,  H01L41/22 ,  H01L41/319 ,  H03H3/02

Abstract: Procedimiento para la producción de un componente de semiconductores con una secuencia de capas para la conversión de señales acústicas o térmicas y de modificaciones de la tensión eléctrica las unas en las otras, en el que como partes de la secuencia de capas se genera al menos un electrodo inferior (U), encima una capa (S) que es piezoeléctrica o piroeléctrica, y encima un electrodo superior (O), caracterizado porque el electrodo inferior (U) es generado depositando un material conductor y puliéndolo a continuación con medios químico - mecánicos para el alisamiento de rugosidades de la superficie.

公开(公告)号：DE102005004435B4

公开(公告)日：2006-10-19

申请号：DE102005004435

申请日：2005-01-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： THALHAMMER ROBERT ,  AIGNER ROBERT ,  MARKSTEINER STEPHAN

IPC: H03H9/15

Abstract: A BAW resonator includes a resonator region having a piezo-electric layer between two excitation electrodes, wherein an acoustic standing wave forms when operating the BAW resonator at a resonant frequency. Furthermore, the BAW resonator includes a leaky wave reflection structure formed to reflect leaky waves generated when operating the BAW resonator, wherein the leaky waves propagate in a direction differing from a propagation direction of the acoustic standing wave.

公开(公告)号：DE50207038D1

公开(公告)日：2006-07-06

申请号：DE50207038

申请日：2002-12-12

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT ,  ELBRECHT LUEDER ,  MARKSTEINER STEPHAN ,  NESSLER WINFRIED

IPC: H01L41/22 ,  H03H3/02 ,  H01L41/083 ,  H01L41/09 ,  H03H9/17

Abstract: In a method of producing an electrode for a resonator in thin-film technology, the electrode of the resonator is embedded in an insulating layer such that a surface of the electrode is exposed, and that a surface defined by the electrode and the insulating layer is substantially planar.

公开(公告)号：DE59911769D1

公开(公告)日：2005-04-21

申请号：DE59911769

申请日：1999-08-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT ,  HIEROLD CHRISTOFER ,  KAPELS HERGEN ,  KOLB STEFAN ,  MAIER-SCHNEIDER DIETER ,  OPPERMANN KLAUS-GUENTER ,  TIMME HANS-JOERG ,  SCHEITER THOMAS ,  WERNER WOLFGANG

IPC: G01P15/125 ,  B81B3/00 ,  B81B7/00 ,  B81C1/00 ,  B81C3/00 ,  G01L9/00 ,  G01L9/12 ,  G01P15/08 ,  H01L29/84 ,  H04R7/10

公开(公告)号：AT272845T

公开(公告)日：2004-08-15

申请号：AT00993537

申请日：2000-12-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT ,  MICHAELIS SVEN ,  BRAUER MICHAEL ,  PLOETZ FLORIAN

IPC: G01P15/08 ,  B81B3/00 ,  B81B7/00 ,  B81C1/00 ,  G01P1/02 ,  H01L21/301 ,  H01L29/84

Abstract: A micromechanical structure is described which is disposed on a base body and requires protection from environmental influences by a covering body. Furthermore, electrical contacts are necessary for establishing contacts for the micromechanical structure. By skillfully carrying out a sawing-into operation and a sawing-through operation, it is possible to expose the electrical contact.

公开(公告)号：AU2003257428A8

公开(公告)日：2004-03-11

申请号：AU2003257428

申请日：2003-07-01

Applicant: NOKIA MOBILE PHONES LTD ,  INFINEON TECHNOLOGIES AG

Inventor： ELLA JUHA SAKARI ,  TIMME HANS-JORG ,  AIGNER ROBERT ,  MARKSTEINER STEPHAN

IPC: H03H7/42 ,  H01F17/00 ,  H03H7/38 ,  H03H9/00 ,  H03H9/58 ,  H03H9/70

Abstract: The filter circuit has a symmetrical gate (204), an unsymmetrical gate (202), a series circuit filter stage (206) and a symmetry component (208) between the symmetrical gate and the unsymmetrical gate, the symmetry component and the filter stage provided on a common substrate (S). The filter stage can have at least one series bulk acoustic wave resonator and at least one parallel bulk acoustic wave resonator.

公开(公告)号：DE10205585A1

公开(公告)日：2003-08-28

申请号：DE10205585

申请日：2002-02-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DEHE ALFONS ,  BEVER THOMAS ,  AIGNER ROBERT ,  BRAUER MICHAEL ,  FUELDNER MARC

IPC: B81B3/00 ,  B81C1/00

公开(公告)号：DE10144847A1

公开(公告)日：2003-03-27

申请号：DE10144847

申请日：2001-09-12

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT ,  PLOETZ FLORIAN

IPC: B81B3/00 ,  B81C1/00 ,  H01L21/02 ,  H01L21/764 ,  H01L23/522 ,  H01L27/08 ,  H01L21/316 ,  H01L23/58

Abstract: Production of a membrane (8) on a semiconductor substrate (1) comprises preparing the substrate; forming first trenches in the substrate; applying a first dielectric material so that the trenches are filled with the dielectric material and a dielectric layer (4) is formed on the surface of the substrate; forming openings in the dielectric layer; isotropically etching the substrate selective to the first dielectric material through the openings in the dielectric layer; and applying a second dielectric material so that the openings of the first dielectric layer are closed and a membrane is formed. Preferred Features: The depth of the first trenches is larger than the depth produced by the isotropic etching. The first dielectric material is made from silicon oxide or silicon nitride. The second dielectric material is made from BPSG.